ANSYS 17 應用於半導體設備和製程的應用技術 1 李龍育 Dragon CFD 技術經理 虎門科技
虎門科技 CADMEN 虎門科技股份有限公司, 創立於 1980 年, 提供客戶全球最優質的工程分析軟體 ANSYS 與技術服務 總公司 : 新北市板橋區 台中分 : 台中市文心路 台南分 結構強度分析 ANSYS Mechanical 落摔分析 ANSYS LS-DYNA 散熱與熱流場分析 ANSYS FLUENT ICEPAK CFX 電磁場分析 ANSYS Emag Maxwell 多物理耦合分析 Provider of Engineering Solutions and Methodology 2 Taiwan Auto-Design Co.
About ANSYS Advanced Physics Solvers Systems and Multiphysics ANSYS Simplorer ANSYS Workbench ANSYS Engineering Knowledge Manager ANSYS HPC ANSYS DesignXplorer Structural Mechanics Fluid Dynamics Electromagnetics ANSYS Mechanical ANSYS LS-DYNA ANSYS ncode ANSYS Acoustics ANSYS FLUENT ANSYS CFX ANSYS Icepak ANSYS HFSS ANSYS Maxwell ANSYS Q3D 3
CFD Simulation Driven Product Development 數位實驗 設計與偵錯工具 深入了解產品問題 改良產品性能表現 4
CFD Simulation Driven Product Development 數位實驗 設計與偵錯工具 深入了解產品問題 改良產品性能表現 Devices are very complex Complex geometry, complex BCs, complex physics (turbulence, multiphase, chemistry, radiation, ), complex systems, 研發成本 開發時效 性能提升 創新研發利器 5 Flow path lines, concentrations of AsH3, GaAs deposition on a substrate in a MOCVD system.
ANSYS CFD 模擬軟體介紹 ANSYS CFD 為功能強大 模組廣泛的旗艦型 CFD 產品 核心技術 移動 / 變形網格 多相流 化學反應流 紊流 熱輻射 氣動噪音 擴展分析 磁流模組 (MHD) 燃料電池模組 流固耦合 (FSI) 最佳化分析 6
多相流 Multiphase Flows - Introduction The fluid system is defined by a primary and multiple secondary phases. One of the phases is considered continuous (primary) The others (secondary) are considered to be dispersed within the continuous phase. (Note that for free-surface flows, using the Volume of Fluid model (VOF), a distinct interface is defined between the phases and both could be considered continuous) Underfill Slug Flow Pneumatic Transport, Hydrotransport, or Slurry Flow Bubbly, Droplet, or Particle-Laden Flow 7 Sedimentation Stratified / Free- Surface Flow Fluidized Bed
Physics Model Euler-Euler Model Multiphase Model DPM VOF Mixture Euler- Euler Euler-Granular Dense Discrete Phase Discrete Element Method Cavitation Mixture Stirred tank Gas Sparging Euler-Granular Model Discrete Phase Model Tablet Production Sand 8 Volume Fraction of Water Animation of Gas Volume Fraction Contours Gas Blowing Powder
化學反應流 支援多樣式的化學反應 多相流中異相化學反應 Slow chemistry 與 micromixing model 新的汙染物 SOx 模型 尿素注入選擇性觸媒還原法 (SNCR with urea injection) 表面反應 與 ChemKin 結合 Species Model SCR 觸媒還原反應 Chemical Vapor Deposition 射流反應器 パスライン (Color SiH4 concentration) Deposition speed of Tungsten on the wafer 9 300mm CVD Chamber, Novellus Systems, Inc.
CAE Platform About ANSYS Workbench 分析專案管理 重複應用 參數分析 最佳化使用 耦合運算 DesignModeler 建構分析模型 SCDM- 進階建修模 ANSYS MESH 網格建構 ANSYS FLUENT 設定 & 計算 CFD POST 後處理可視化 10
半導體分析範例介紹 11
薄膜塗佈 探討不同 Die 之外型所造成的影響 改變 Coating 材料性質 不同捲動速度下的模厚變化 漏液防止 缺陷分析 考慮表面張力 接觸角 0.1m/s 0.55m/s 12
Chemical Mechanical Polishing (CMP) (1) Slurry Strand - Deflection by pad - Mixing with resident slurry (5) Free-Surface Reflux Flow - Redistribution on pad - Debris conveyance W Platen W Wafer (4) Film Flow in Pad-Wafer Gap - Velocity variations - Groove/land flow split (2) Free-Surface Flow - Centrifugal force - Pad capillary action (3) Free-Surface to Film Transition - Bow wave reflux - Excess slurry loss from pad How do changes in slurry type, pad type, downforce, and conditioning method interact with each other to effect the removal rate? 13 13
Analysis of Underfill Customer want to know how much volume of dispensing is suitable for next process 14
Analysis of No-Flow Underfill Our Solution VOF Using VOF model can consider dispensing adhesion effect on the wall. Dynamic Mesh Results- Volume Fraction UDF So we can using FLUENT to explore the dispensing flow behavior during compression, the same time can also explore the effect of compression speed and reflow phenomenon. 15
CVD 應用 Previous research Process design Chamber thermal analysis Temperature distribution Heater design Purge cooling system Structure deformation Reactive flow analysis Flow pattern analysis Chemical reaction Growth rate chamber design 16
CVD 範例 - 流場優化 17
CVD 範例 - 反應沉積 GaAs 厚度在晶圓上的分佈 晶圓上的速度分佈 18 質量傳輸材料設定 反應設定反應機制操作條件 表面速度隨晶圓半徑增加而增加受速度影響晶圓內部沉積率高外部較低
Types of Species Involved Surface reaction mechanism Decomposition reactions of the precursors in the gaseous phase ( 氣態體分解反應 ) Adsorption reactions of the reactive products by the surface ( 表面反應產物的吸附反應 ) Desorption reactions of the adsorbed species ( 吸附物種的脫附反應 ) Deposition of the required material ( 沉積所需的材料 ) Heat required for the reactions may be supplied either by heating the reaction chamber wall or the substrate itself Flow Surface Site Solid Bulk 19
Material & Reaction Set Up Gas, site and bulk species to be defined as type fluid Switch on wall surface reactions in the species transport panel SiHCl 3 + H 2 Si + 3HCl Include required species appropriately Define reactions Volumetric Wall surface Gas species Arrhenius reactions 20 Site species Bulk species
Surface Reaction Import KINetics CHEMKIN for CFD Stiff Equation Solvers Gas and Surface Chemistry Property databases Multicomponent Transport 21
Example: Aixtron 200 Horizontal Reactor Experiment Growth profile predicted by CFD is in excellent comparison with that of experiment Bending of iso-thickness lines is nicely captured Simulation 22
Numerical simulation of the temperature distribution in a planetary MOCVD reactor 23
Result and discussion Temperature distribution Heat dissipation Susceptor Lid Heater The highest temperature (greater than 1100ºC) occurred in the heater because the reactor model used the heater as a heat source. The streamline from the injector to the exhaust collector represented a circulation near the skirt. 24 Simulation results of the MOCVD chamber. (a) Temperature contour, (b)streamline.
Result and discussion Radiation heat flux bottom surface of susceptor top surface of susceptor bottom surface of lid a b c Contours of radiation heat flux (W/m2). (a) Absorbed radiation on the bottom surface of susceptor, (b) radiation heat flux from top surface of susceptor, (c)absorbed radiation on the bottom surface of lid. High absorbed radiation heat flux primarily occurred on the heater projection area. Low radiation heat flux occurred at the reactor center because of the heater layout. 25
Result and discussion Ceiling design (a)without ceiling design, (b) with ceiling design, (c) with ceiling, setting 85% of the heater watts in the reactor without ceiling. Ceiling design of the reactor. (a) w/o ceiling design, (b) w/ ceiling design. 26
Result and discussion Heat shield layout The modified reactor with a new heater design. (a) Cross-sectional view, (b) temperature contour ( C). 27
Result and discussion Ceiling design & heat shield layout 28
Other research interests Structure deformation analysis cooling water 29
Other research interests Structure deformation analysis cooling water A MAX: 3.98 MM B MAX: 4.09 MM E MAX: 3.79 MM 30
Other research interests Temperature distribution on wafer carrier wafer carrier heater Sliding/moving mesh 31
Showerhead Analysis for Species Transport 虎門科技股份有限公司 李龍育 32
Problem Description 分析一 Showerhead Component, 其共有三層, 由入口的 4 個 inlet 開始, 第二層為 196 個通道, 第三層為 3600 個通道, 以了解其均勻擴散的結果 33
網格建構 & 計算時間 總網格數約 2620 萬 使用 CutCell 模式建構 以四核心運算, 計算時間約為 7.4 hr 34
邊界條件 操作壓力 2000Pa Inlet Boundary Condition Mass Flow Inlet: 0.0002kg/s Temperature: 300K Species Mass Fractions: NH3 0.511 SIH4 0.203 N2 0.286 35
Results: Velocity Streamline 36
Results: First Layer SIH4 mass fraction & Molar Concentration First Layer 37
Results: Second Layer SIH4 mass fraction & Molar Concentration Second Layer 均勻度提升!! 38
Wafer 清洗實例分享 Inlet: Water & Velocity 1m/s 分析一晶圓清洗設備之做動過程, 包含在一開始單只有水的進料過程, 一直到 2.5 秒後 wafer 開始以 5000PRM 做旋轉, 藉以了解流場等資訊 outlet: Pressure Out Wall: 2.5 秒後開始旋轉 5000RPM 39
Water inlet Results 40
Results Start rotating 41
Results Water Volume Fraction Velocity Vector Stream Line 42
無塵室微環境氣流場分析 於升降台釋放塵粒的徑線分佈圖 43
不同方案比較顆粒殘留 原始設計 T = 27.0 秒 塵埃粒子分佈圖 m 單位 : s 氣流夾層中裝設檔板 T = 27.0 秒 塵埃粒子分佈圖 m 單位 : s 44
RTP 快速熱處理案例介紹 45
ANSYS CFD 技術應用領域 熱輻射模型 CFD 熱輻射模型 廣泛的熱輻射模型可針對不同光學深度及熱條件選擇 P1 Rosseland DTRM Discrete Ordinates( 方向的離散化 ) Surface to Surface 太陽輻射模型 : 使用 NREL 與 ASHRAE 資料計算太陽能方向強度 提升了 S2S 模型計算效率 不同波段定義 材料對不同波段的吸收係數 壁面對不同波段的放射率與反射係數 46
Rapid Thermal Processing (RTP) Requirements Fast ramp-up and cool-down High throughput Minimal dopant diffusion Precise trajectory following for process repeatability Near uniform temperature across wafer at all times Uniform processing No damage from thermal stress Advantages Shorter cycle times Low thermal budget Reduced dopant diffusion Reduced contamination High throughput Minimizes time at high wafer temperatures Healing implantation damage Important components for next generation IC fabs RTO RTA RTCVD 47
RTP Modeling RTP equipment has complex configurations and is inherently a transient process. Fluid flow and heat transfer are 3D in nature, due to strong coupling to radiation. High fidelity radiative heat transfer simulations must include Diffuse and specular reflections Banded model for semitransparent quartz and lamp assembly Accurate spectral and temperature dependent properties Effect of thin films Non-gray radiation PTCVD simulations must include, all the above features plus Gas phase species 48 Complex surface chemistry Contours of incident radiation and wafer surface temperature in an RTP reactor after 10 seconds of operation
Rapid Thermal Annealing CFD modeling using Fluent code can guide critical design parameters of the lamp-house, reaction chamber and shower head 49
Rapid Thermal Annealing 50
Rapid Thermal Annealing 51
Meshing Workflow EnSight Fluids Structural Thermal CAD Import Emag Design Points Postprocess Thank you for your attention! 52