Silicon Diffused Power Transistor

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Silicon Diffused Power Transistor

Silicon Diffused Power Transistor

Silicon Diffused Power Transistor

Silicon Diffused Power Transistor

Silicon Diffused Power Transistor

Silicon Diffused Power Transistor

Silicon Diffused Power Transistor

Silicon Diffused Power Transistor

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Silicon Diffused Power Transistor

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Transcription:

GENERAL DESCRIPTION High volage, high-speed swiching npn ransisors in a fully isolaed SOT99 envelope, primarily for use in horizonal deflecion circuis of colour elevision receivers. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT V CESM Collecor-emier volage peak value V BE = V - 5 V V CEO Collecor-emier volage (open base) - 7 V I C Collecor curren (DC) - 8 A I CM Collecor curren peak value - 5 A P o Toal power dissipaion T hs 25 C - 34 W V CEsa Collecor-emier sauraion volage I C = 4.5 A; I B =.6 A -. V I Csa Collecor sauraion curren f = 6 khz 4.5 - A f Fall ime I Csa = 4.5 A; f = 6kHz.7 - µs PINNING - SOT99 PIN CONFIGURATION SYMBOL PIN base DESCRIPTION case c 2 collecor 3 emier b case isolaed 2 3 e LIMITING VALUES Limiing values in accordance wih he Absolue Maximum Raing Sysem (IEC 34) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V CESM Collecor-emier volage peak value V BE = V - 5 V V CEO Collecor-emier volage (open base) - 7 V I C Collecor curren (DC) - 8 A I CM Collecor curren peak value - 5 A I B Base curren (DC) - 4 A I BM Base curren peak value - 6 A P o Toal power dissipaion T hs 25 C - 34 W T sg Sorage emperaure -65 5 C T j Juncion emperaure - 5 C THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT R h j-hs Juncion o heasink wihou heasink compound - 3.7 K/W R h j-hs Juncion o heasink wih heasink compound - 2.8 K/W R h j-a Juncion o ambien in free air 35 - K/W July 998 Rev.2

ISOLATION LIMITING VALUE & CHARACTERISTIC T hs = 25 C unless oherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V isol Repeiive peak volage from all hree erminals o exernal R.H. 65 % ; clean and dusfree - 25 V heasink C isol Capaciance from T2 o exernal heasink f = MHz - 22 - pf STATIC CHARACTERISTICS T hs = 25 C unless oherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT I CES Collecor cu-off curren V BE = V; V CE = V CESMmax - -. ma I CES V BE = V; V CE = V CESMmax ; - - 2. ma T j = 25 C I EBO Emier cu-off curren V EB = 6. V; I C = A - - ma V CEOsus Collecor-emier susaining volage I B = A; I C = ma; 7 - - V L = 25 mh V CEsa Collecor-emier sauraion volages I C = 4.5 A; I B =.6 A - -. V V BEsa Base-emier sauraion volage I C = 4.5 A; I B = 2 A - -. V h FE DC curren gain I C = ma; V CE = 5 V 6 3 3 - DYNAMIC CHARACTERISTICS T hs = 25 C unless oherwise specified SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT f T Transiion frequency a f = 5 MHz I C =. A;V CE = 5 V 7 - MHz C C Collecor capaciance a f = MHz V CB = V 25 - pf Swiching imes (6 khz line I Csa = 4.5 A;L c mh;c fb = 4 nf deflecion circui) I B(end) =.4 A; L B = 6 µh; -V BB = -4 V; -I BM = 2.25 A s f Turn-off sorage ime Turn-off fall ime 6.5.7 - - µs µs Measured wih half sine-wave volage (curve racer). July 998 2 Rev.2

+ 5v -2R ICsa 9 % IC Horizonal Oscilloscope Verical IB s IBend % f 3-6 Hz R R 6V Fig.. Tes circui for V CEOsus. - IBM Fig.4. Swiching imes definiions. IC / ma + 5 v nominal adjus for ICsa 25 2 mh IBend LB D.U.T. 2nF BY228 VCE / V min -VBB VCEOsus Fig.2. Oscilloscope display for V CEOsus. Fig.5. Swiching imes es circui. IC TRANSISTOR DIODE ICsa h FE BU58AD IB IBend 2us 26us 64us VCE Fig.3. Swiching imes waveforms.. IC/A Fig.6. Typical DC curren gain. h FE = f (I C ) parameer V CE July 998 3 Rev.2

VCESAT / V BU58AD Zh K/W bu58ax.9.8.7.6.5.4..5.2..5.2.3.2.. IC / A Fig.7. Typical collecor-emier sauraion volage. V CE sa = f (I C ); parameer I C /I B. D = T T..E-7.E-5 E-3.E-.E+ / s Fig.. Transien hermal impedance. Z h j-hs = f(); parameer D = p /T P D p p VBESAT / V.4.2.8 IC = 4.5A IC = 3A IC = 6A BU58AD.6 2 3 IB / A 4 Fig.8. Typical base-emier sauraion volage. V BE sa = f (I B ); parameer I C 2 9 8 7 6 5 4 3 2 PD% Normalised Power Deraing wih heasink compound 2 4 6 8 2 4 Ths / C Fig.. Normalised power dissipaion. PD% = P D /P D 25 C = f (T hs ) VCESAT/V BU58AD IC = 6A IC = 4.5A IC = 3A.. IB/A Fig.9. Typical collecor-emier sauraion volage. V CE sa = f (I B ); parameer I C July 998 4 Rev.2

IC / A IC / A ICM max IC max =. p = ICM max IC max =. p = II us II us Po max us Po max us. I ms. I ms ms ms DC DC. VCE / V Fig.2. Forward bias safe operaing area. T hs = 25 C I Region of permissible DC operaion. II Exension for repeiive pulse operaion. NB: Mouned wih heasink compound and 3 ± 5 newon force on he cenre of he envelope.. VCE / V Fig.3. Forward bias safe operaing area. T hs = 25 C I Region of permissible DC operaion. II Exension for repeiive pulse operaion. NB: Mouned wihou heasink compound and 3 ± 5 newon force on he cenre of he envelope. July 998 5 Rev.2

MECHANICAL DATA Dimensions in mm Ne Mass: 5.5 g.7 7.3 5.3 max 3. 3.3 3.2 5.2 max 6.2 5.8 45 o 2.5 max seaing plane 3.5 3.5 max no inned 5.7 min 2 3 2. max.2..4 M.7 max 2. 5.45 5.45 Noes. Refer o mouning insrucions for F-pack envelopes. 2. Epoxy mees UL94 V a /8". Fig.4. SOT99; The seaing plane is elecrically isolaed from all erminals. July 998 6 Rev.2

DEFINITIONS Daa shee saus Objecive specificaion This daa shee conains arge or goal specificaions for produc developmen. Preliminary specificaion This daa shee conains preliminary daa; supplemenary daa may be published laer. This daa shee conains final produc specificaions. Limiing values Limiing values are given in accordance wih he Absolue Maximum Raing Sysem (IEC 34). Sress above one or more of he limiing values may cause permanen damage o he device. These are sress raings only and operaion of he device a hese or a any oher condiions above hose given in he Characerisics secions of his specificaion is no implied. Exposure o limiing values for exended periods may affec device reliabiliy. Applicaion informaion Where applicaion informaion is given, i is advisory and does no form par of he specificaion. Philips Elecronics N.V. 998 All righs are reserved. Reproducion in whole or in par is prohibied wihou he prior wrien consen of he copyrigh owner. The informaion presened in his documen does no form par of any quoaion or conrac, i is believed o be accurae and reliable and may be changed wihou noice. No liabiliy will be acceped by he publisher for any consequence of is use. Publicaion hereof does no convey nor imply any license under paen or oher indusrial or inellecual propery righs. LIFE SUPPORT APPLICATIONS These producs are no designed for use in life suppor appliances, devices or sysems where malfuncion of hese producs can be reasonably expeced o resul in personal injury. Philips cusomers using or selling hese producs for use in such applicaions do so a heir own risk and agree o fully indemnify Philips for any damages resuling from such improper use or sale. July 998 7 Rev.2