Amplifier Transistor PNP Silicon Features These are Pb -Free Devices* MAXIMUM RATINGS Rating Symbol Value Unit CollectorEmitter Voltage V CEO 6 CollectorBase Voltage V CBO 6 EmitterBase Voltage V EBO Collector Current Continuous I C 6 madc Total Device Dissipation @ T A =25 C Derate above 25 C Total Device Dissipation @ T C =25 C Derate above 25 C Operating and Storage Junction Temperature Range THERMAL CHARACTERISTICS P D 625 P D 1.5 12 T J,T stg 55 to +1 mw mw/ C W mw/ C Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient R θja 2 C/W Thermal Resistance, Junction to Case R θjc 83.3 C/W Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. C TO -92 CASE 29 STYLE 17 2 BASE COLLECTOR 1 3 EMITTER 1 1 2 2 3 3 STRAIGHT LEAD BENT LEAD BULK PACK TAPE & REEL AMMO PACK MARKING DIAGRAM P2N2 97A AYWW G G A = Assembly Location Y = Year WW = Work Week G = PbFree Package (Note: Microdot may be in either location) ORDERING INFORMATION Device Package Shipping G RL1G TO92 (PbFree) TO92 (PbFree) Units / Bulk 2 / Tape & Reel *For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD811/D. Semiconductor Components Industries, LLC, 27 April, 27 - Rev. 6 1 Publication Order Number: /D
ELECTRICAL CHARACTERISTICS (T A =25 C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS CollectorEmitter Breakdown Voltage (Note 1) V (BR)CEO (I C =1mAdc,I B =) 6 CollectorBase Breakdown Voltage (I C =1mAdc, I E =) EmitterBase Breakdown Voltage (I E =1mAdc, I C =) Collector Cutoff Current (V CE =3,V EB(off) =.5) Collector Cutoff Current (V CB =,I E =) (V CB =,I E =,T A = 1 C) Emitter Cutoff Current (V EB =3.) Collector Cutoff Current (V CE =1V) Base Cutoff Current (V CE =3,V EB(off) =.5) ON CHARACTERISTICS V (BR)CBO 6 V (BR)EBO I CEX I CBO.1 1 I EBO 1 I CEO 1 I BEX madc DC Current Gain (I C =.1mAdc,V CE =1) (I C =1.mAdc,V CE =1) (I C =1mAdc,V CE =1) (I C = 1 madc, V CE = 1 ) (Note 1) (I C = madc, V CE = 1 ) (Note 1) h FE 75 CollectorEmitter Saturation Voltage (Note 1) (I C = 1 madc, I B =15mAdc) (I C = madc, I B =madc) V CE(sat).4 1.6 BaseEmitter Saturation Voltage (Note 1) (I C = 1 madc, I B =15mAdc) (I C = madc, I B =madc) SMALL -SIGNAL CHARACTERISTICS CurrentGain Bandwidth Product (Notes 1 and 2) (I C =madc,v CE = 2, f = MHz) Output Capacitance (V CB =1,I E =,f=1.mhz) Input Capacitance (V EB =2.,I C =,f=1.mhz) SWITCHING CHARACTERISTICS V BE(sat) 1.3 2.6 f T 2 C obo 8. C ibo 3 MHz pf pf TurnOn Time t on ns Delay Time (V CC =3,I C = 1 madc, I B1 = 15 madc) (Figures 1 and 5) t d 1 ns Rise Time t r 4 ns TurnOff Time t off 11 ns Storage Time (V CC =6.,I C = 1 madc, I B1 =I B2 =15mAdc)(Figure2) t s 8 ns Fall Time t f 3 ns 1. Pulse Test: Pulse Width ms, Duty Cycle 2.%. 2. f T is defined as the frequency at which h fe extrapolates to unity. 2
INPUT Z o =Ω PRF = 1 PPS RISE TIME 2. ns P.W. < 2 ns 3 V 1. k TO OSCILLOSCOPE RISE TIME ns 16 V 3 V 2 INPUT Z o =Ω PRF = 1 PPS RISE TIME 2. ns P.W. < 2 ns 1. k +15V 6.V 1. k 37 1N916 TO OSCILLOSCOPE RISE TIME ns 2 ns Figure 1. Delay and Rise Time Test Circuit 2 ns Figure 2. Storage and Fall Time Test Circuit 3
TYPICAL CHARACTERISTICS hfe, NORMALIZED CURRENT GAIN 3. 2. 1..7.5.3 V CE =1.V V CE =1V T J = 125 C 25 C 55 C.2.1.2.3.5.7 1. 2. 3. 7. 1 2 3 7 2 Figure 3. DC Current Gain V CE, COLLECTOREMITTER VOLTAGE (VOLTS) 1..8.6.4.2.5 I C =1.mA 1 ma ma ma.1.2.3.5.7.1.2.3.5.7 1. 2. 3. 7. 1 2 3 I B, BASE CURRENT (ma) Figure 4. Collector Saturation Region t, TIME (ns) 2 7 3 2 1 7. t r t d @V BE(off) =V 3. 7. 1 2 3 7 2 I C, COLLECTOR CURRENT Figure 5. Turn -On Time V CC =3V I C /I B =1 2. V t, TIME (ns) 2 7 3 2 t f t s =t s 1/8 t f 1 7. 7. 1 2 3 7 2 Figure 6. Turn -Off Time V CC =3V I C /I B =1 I B1 =I B2 4
TYPICAL SMALL -SIGNAL CHARACTERISTICS NOISE FIGURE V CE =1,T A =25 C 1 1 f=1.khz 8. 8. NF, NOISE FIGURE (db) 6. 4. 2. I C =1.mA,R s = 43 Ω ma, R s = 56 Ω ma, R s =2.7kΩ ma, R s =1.6kΩ R s = OPTIMUM SOURCE RESISTANCE NF, NOISE FIGURE (db) 6. 4. 2. I C =ma ma ma 1. ma.1.2.5.1.2.5 1. 2. 1 2 f, FREQUENCY (khz) Figure 7. Frequency Effects 2 1. k 2. k k 1 k 2 k k R s, SOURCE RESISTANCE (OHMS) Figure 8. Source Resistance Effects C, CAPACITANCE (pf) 3 2 1 7. 3. 2..1 C eb REVERSE VOLTAGE (VOLTS) C cb.2.3.5 1. 2. 3. 1 2 3 ft, CURRENTGAIN BANDWIDTH PRODUCT (MHz) 4 2 8 6 4 3 V CE =2V 2 1. 2. 1 2 2 Figure 9. Capacitances Figure 1. Current -Gain - Bandwidth Product 1. +.5 V, VOLTAGE (VOLTS).8.6.4 V BE(sat) @I C /I B =1 V BE(on) @V CE =1V COEFFICIENT (mv/ C).5 1. 1.5 R θvc for V CE(sat).2 V CE(sat) @I C /I B =1.1.2.5 1. 2. 1 2 2 Figure 11. On Voltage 2. R θvb for V BE 2.5.1.2.5 1. 2. 1 2 2 Figure 12. Temperature Coefficients 5
PACKAGE DIMENSIONS TO -92 (TO -226) CASE 2911 ISSUE AM R A N B STRAIGHT LEAD BULK PACK NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. P L SEATING INCHES MILLIMETERS PLANE K DIM MIN MAX MIN MAX A.175.25 4.45 5.2 B.17.21 4.32 5.33 C.125.165 3.18 4.19 D.16.21.47.533 X X D G.45.55 1.15 1.39 H.95.15 2.42 2.66 G J.15.2.39. H J K. 12.7 V C L.2 6.35 N.8.15 2.4 2.66 P. 2.54 SECTION X -X R.115 2.93 1 N V.135 3.43 R T SEATING PLANE P G A X X V 1 B K C N BENT LEAD TAPE & REEL AMMO PACK D J SECTION X -X NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. MILLIMETERS DIM MIN MAX A 4.45 5.2 B 4.32 5.33 C 3.18 4.19 D.4.54 G 2.4 2.8 J.39. K 12.7 N 2.4 2.66 P 1. 4. R 2.93 V 3.43 STYLE 17: PIN 1. COLLECTOR 2. BASE 3. EMITTER ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 8217 USA Phone: 336752175 or 8344386 Toll Free USA/Canada Fax: 336752176 or 83443867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 82829855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 79 291 Japan Customer Focus Center Phone: 813577338 6 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative /D