Trench TM Power MOSFET N-Channel Enhancement Mode IXTA76N25T IXTP76N25T IXTQ76N25T IXTH76N25T V DSS = 2V I D25 = 76A R DS(on) 44m Typical Avalanched BV = V TO-3 AA (IXTA) TO-2AB (IXTP) TO-3P (IXTQ) G S G D S G D S Symbol Test Conditions Maximum Ratings V DSS = 25 C to 1 C 2 V V DGR = 25 C to 1 C, R GS = 1M 2 V S Continuous V M Transient V I D25 = 25 C 76 A I DM = 25 C, Pulse Width Limited by M 1 A I A = 25 C 8 A E AS = 25 C 1.5 J P D = 25 C 4 W -55... +1 C M 1 C T stg -55... +1 C T L Maximum Lead Temperature for Soldering C T SOLD Plastic Body for s 2 C F C Mounting Force (TO-3)..65 / 2.2...6 N/lb M d Mounting Torque (TO-2, TO-3P & TO-247) 1.13/ Nm/lb.in Weight TO-3 2.5 g TO-2 3. g TO-3P 5.5 g TO-247 6. g Symbol Test Conditions Characteristic Values ( = 25 C, Unless Otherwise Specified) Min. Typ. Max. BV DSS = V, I D = 1mA 2 V = V, I D = ma V (th) V DS =, I D = 2μA 3. 5. V I GSS = V, V DS = V na I DSS V DS = V DSS, = V 2 A = 125 C μa R DS(on) = V, I D =.5 I D25, Note 1 44 m TO-247(IXTH) G = Gate D = Drain S = Source Tab = Drain Features G D S Avalanche Rated High Current Handling Capability Fast Intrinsic Rectifier Low R DS(on) Advantages Easy to Mount Space Savings High Power Density Applications DC-DC Converters Battery Chargers Switch-Mode and Resonant-Mode Power Supplies DC Choppers AC Motor Drives Uninterruptible Power Supplies High Speed Power Switching Applications 15 IXYS CORPORATION, All Rights Reserved DS99663G(11/15)
Symbol Test Conditions Characteristic Values ( = 25 C Unless Otherwise Specified) Min. Typ. Max. g fs V DS = V, I D =.5 I D25, Note 1 43 72 S C iss 49 pf C oss = V, V DS = 25V, f = 1MHz 4 pf C rss pf t d(on) ns Resistive Switching Times t r 25 ns V t GS = 15V, V DS =.5 V DSS, I D =.5 I D25 d(off) 56 ns R t G = 3.3 (External) f 29 ns Q g(on) 92 nc Q gs = V, V DS =.5 V DSS, I D = 25A 28 nc Q gd 21 nc R thjc.27 C /W R thch TO-2. C W TO-3P & TO-247.25 C W IXTA76N25T IXTP76N25T IXTQ76N25T IXTH76N25T Source-Drain Diode Symbol Test Conditions Characteristic Values ( = 25 C Unless Otherwise Specified) Min. Typ. Max. I S = V 76 A I SM Repetitive, Pulse Width Limited by M A V SD I F = I S, = V, Note 1 1.5 V t rr 8 ns I F = 38A, -di/dt = 2A/ s I RM 21 A V R = V, = V Q RM 1.6 C Note 1: Pulse test, t s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,49,961 5,237,481 6,162,665 6,4,65 B1 6,683,344 6,727,585 7,5,734 B2 7,157,338B2 by one or moreof the following U.S. patents: 4,8,72 5,17,8 5,63,7 5,381,25 6,259,123 B1 6,534,343 6,7,5 B2 6,759,692 7,63,975 B2 4,881,6 5,34,796 5,7,117 5,486,715 6,6,728 B1 6,583,5 6,7,463 6,771,478 B2 7,71,537
IXTA76N25T IXTH76N25T IXTP76N25T IXTQ76N25T TO-2 Outline TO-3 Outline Pins: 1 - Gate 2 - Drain 3 - Source 1 - Gate 2,4 - Drain 3 - Source TO-3P Outline TO-247 Outline 1 2 3 e Terminals: 1 - Gate 3 - Source P 2 - Drain Dim. Millimeter Inches Min. Max. Min. Max. A 4.7 5.3.5.9 A 1 2.2 2.54.87.2 A 2 2.2 2.6.59.98 b 1. 1.4..55 b 1 1.65 2.13.65.84 b 2 2.87 3.12.113.123 C.4.8.16.31 D. 21.46.819.845 E 15.75 16..6.6 e 5. 5.72.5.5 L 19.81.32.7. L1 4..177 P 3.55 3.65.1.4 Q 5.89 6..232.252 R 4.32 5.49.1.216 S 6.15 BSC 242 BSC 15 IXYS CORPORATION, All Rights Reserved
IXTA76N25T IXTP76N25T IXTQ76N25T IXTH76N25T Fig. 1. Output Characteristics @ = 25ºC Fig. 2. Extended Output Characteristics @ = 25ºC = V 8V 1 1 = V 8V 7V 6V 1 7V 6V 5V.5 1 1.5 2 2.5 3 3.5 5V 2 4 6 8 12 16 Fig. 3. Output Characteristics @ = 125ºC 3.2 Fig. 4. R DS(on) Normalized to Value vs. Junction Temperature = V 7V 2.8 = V 6V RDS(on) - Normalized 2.4 2. 1.6 1.2 5V.8 1 2 3 4 5 6 7.4 - -25 25 75 125 1 - Degrees Centigrade Fig. 5. R DS(on) Normalized to Value vs. Drain Current Fig. 6. Drain Current vs. Case Temperature 3.6 3.2 = V = 125ºC RDS(on) - Normalized 2.8 2.4 2. 1.6 1.2 = 25ºC.8 1 1 1 - -25 25 75 125 1 - Degrees Centigrade IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXTA76N25T IXTH76N25T IXTP76N25T IXTQ76N25T Fig. 7. Input Admittance Fig. 8. Transconductance 1 = - ºC = 125ºC 25ºC - ºC g f s - Siemens 25ºC 125ºC 3.5 4. 4.5 5. 5.5 6. 6.5 7. - Volts 1 1 1 Fig. 9. Forward Voltage Drop of Intrinsic Diode Fig.. Gate Charge 1 1 1 9 8 7 I D = 25A I G = ma IS - Amperes VGS - Volts 6 5 4 = 125ºC 3 = 25ºC 2 1.4.5.6.7.8.9 1. 1.1 1.2 V SD - Volts 9 Q G - NanoCoulombs Fig. 11. Capacitance Fig. 12. Forward-Bias Safe Operating Area, R DS(on) Limit Capacitance - PicoFarads C iss 1, C oss C rss f = 1 MHz 5 15 25 35 25µs µs 1 1ms = 1ºC = 25ºC Single Pulse ms.1 1 1, 15 IXYS CORPORATION, All Rights Reserved
IXTA76N25T IXTP76N25T IXTQ76N25T IXTH76N25T 38 Fig. 13. Resistive Turn-on Rise Time vs. Junction Temperature 38 Fig.. Resistive Turn-on Rise Time vs. Drain Current 34 R G = 3.3Ω, = 15V 34 = 25ºC t r t r R G = 3.3Ω, = 15V = 125ºC 6 25 35 45 55 65 75 85 95 5 115 125 - Degrees Centigrade 6 15 25 35 45 55 65 75 Fig. 15. Resistive Turn-on Switching Times vs. Gate Resistance 25 38 Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature 68 t r 28 t r t d(on) - - - - = 125ºC, = 15V 24 24 23 16 21 12 3 4 5 6 7 8 9 11 12 13 15 R G - Ohms t d ( o n ) t f 34 64 56 52 48 t f t d(off) - - - - R G = 3.3Ω, = 15V 44 25 35 45 55 65 75 85 95 5 115 125 - Degrees Centigrade t d ( o f f ) 32 Fig. 17. Resistive Turn-off Switching Times vs. Drain Current 73 Fig.. Resistive Turn-off Switching Times vs. Gate Resistance 19 t f 28 24 = 25ºC = 125ºC = 25ºC t f t d(off) - - - - R G = 3.3Ω, = 15V 67 64 61 58 55 52 t d ( o f f ) t f t f t d(off) - - - - = 125ºC, = 15V, 76A 1 1 1 1 9 t d ( o f f ) 16 = 125ºC 49 46 12 43 15 25 35 45 55 65 75 IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 3 4 5 6 7 8 9 11 12 13 15 R G - Ohms
IXTA76N25T IXTH76N25T IXTP76N25T IXTQ76N25T 1 Fig. 19. Maximum Transient Thermal Impedance Z (th)jc - ºC / W.1.1.1.1.1.1.1.1 1 Pulse Width - Seconds 15 IXYS CORPORATION, All Rights Reserved IXYS REF: T_76N25T(6E)9-28--B