Cool MOS Power Transistor Feature New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated Extreme dv/dt rated Product Summary V DS 8 V R DS(on).5 Ω I D P-TO7 Type Package Ordering Code P-TO7 Q67-S Marking N8C3 Maximum Ratings, at T C = 5 C, unless otherwise specified Parameter Symbol Value Unit Continuous drain current T C = 5 C T C = C I D 7. Pulsed drain current, t p limited by T jmax I D puls 33 valanche energy, single pulse E S 7 mj I D =., V DD =5V valanche energy, repetitive t R limited by T ) jmax E R. I D =, V DD =5V valanche current, repetitive t R limited by T jmax I R Reverse diode dv/dt dv/dt 6 V/ns I S =, V DS < V DD, di/dt=/µs, T jmax =5 C Gate source voltage V GS ± V Power dissipation, T C = 5 C P tot 56 W Operating and storage temperature T j, T stg -55... +5 C Page
Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Characteristics Thermal resistance, junction - case R thjc - -.8 K/W Thermal resistance, junction - ambient, leaded R thj - - 6 Linear derating factor - -.5 W/K Soldering temperature,.6 mm (.63 in.) from case for s T sold - - 6 C Electrical Characteristics, at T j = 5 C, unless otherwise specified Static Characteristics Drain-source breakdown voltage V (BR)DSS 8 - - V V GS =V, I D =.5m Drain-source avalanche breakdown voltage V (BR)DS - 87 - V GS =V, I D = Gate threshold voltage, V GS = V DS V GS(th). 3 3.9 I D =68µ Zero gate voltage drain current V DS = 8 V, V GS = V, T j = 5 C V DS = 8 V, V GS = V, T j = 5 C I DSS µ - -.5 - Gate-source leakage current I GSS - - n V GS =V, V DS =V Drain-source on-state resistance R DS(on) -.39.5 Ω V GS =V, I D =7., T j =5 C Gate input resistance R G -.7 - f = MHz, open drain Repetitve avalanche causes additional power losses that can be calculated as PV =E R *f. Page
Electrical Characteristics, at T j = 5 C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. Characteristics Transconductance g fs V DS *I D *R DS(on)max, - 7.5 - S I D =7. Input capacitance C iss V GS =V, V DS =5V, - 6 - pf Output capacitance C oss f=mhz - 8 - Reverse transfer capacitance C rss - - Effective output capacitance, ) C o(er) V GS =V, -.3 - pf energy related V DS =V to 8V Effective output capacitance, ) C o(tr) - 33.9 - time related Turn-on delay time t d(on) V DD =V, V GS =/V, - 5 - ns Rise time t r I D =, R G =7.5Ω - 5 - Turn-off delay time t d(off) - 7 8 Fall time t f - 7 Gate Charge Characteristics Gate to source charge Q gs V DD =6V, I D = - 6.5 - nc Gate to drain charge Q gd - 3 - Gate charge total Q g V DD =6V, I D =, - 58 75 V GS = to V Gate plateau voltage V (plateau) V DD =6V, I D = - 6 - V Co(er) is a fixed capacitance that gives the same stored energy as C oss while V DS is rising from to 8% V DSS. Co(tr) is a fixed capacitance that gives the same charging time as C oss while V DS is rising from to 8% V DSS. Page 3
Electrical Characteristics, at T j = 5 C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. Characteristics Inverse diode continuous I S T C =5 C - - forward current Inverse diode direct current, I SM - - 33 pulsed Inverse diode forward voltage V SD V GS =V, I F =I S -. V Reverse recovery time t rr V R =6V, I F =I S, - 55 - ns Reverse recovery charge Q rr di F /dt=/µs - - µc Peak reverse recovery current I rrm - 33 - Peak rate of fall of reverse di rr /dt - - /µs recovery current Typical Transient Thermal Characteristics Symbol Value Unit Symbol Value Unit typ. typ. Thermal resistance Thermal capacitance R th.3 K/W C th.88 Ws/K R th.7 C th. R th3. C th3.57 R th.95 C th.35 R th5.5 C th5. R th6.9 C th6. P tot (t) T j R th R th,n T case External Heatsink C th C th C th,n T amb Page
Power dissipation P tot = f (T C ) 7 W Drain current I D = f (T C ) parameter: V GS V Ptot ID 9 8 7 8 6 5 6 3 6 8 C 6 T C 6 8 C 6 T C 3 Safe operating area I D = f ( V DS ) parameter : D =, T C =5 C Transient thermal impedance Z thjc = f (t p ) parameter: D = t p /T K/W ID ZthJC - - tp =. ms tp =. ms tp =. ms tp = ms DC - -3 D =.5 D =. D =. D =.5 D =. D =. single pulse - V 3 V DS Page 5 - -7-6 -5 - -3 s - t p
5 Typ. output characteristic I D = f (V DS ); T j =5 C parameter: t p = µs, V GS 35 6 Typ. output characteristic I D = f (V DS ); T j =5 C parameter: t p = µs, V GS 8 V 8V 7V V 6.5V 6V 5 ID ID 6.5V 5.5V 5 6V 5.5V 8 6 5V.5V 5 V 8 6 V 6 V DS 7 Typ. drain-source on resistance R DS(on) =f(i D ) parameter: T j =5 C, V GS Ω 3 5V 8 6 V 6 V DS 8 Drain-source on-state resistance R DS(on) = f (T j ) parameter : I D = 7., V GS = V.6 Ω V R DS(on).6.. V.5V 5V 5.5V RDS(on)..8.6..8.6.. 6V 6.5V V..8.6. 98% typ..8 6 8 8 I D Page 6-6 - 6 C 8 T j
9 Typ. transfer characteristics I D = f ( V GS ); V DS x I D x R DS(on)max parameter: t p = µs 35 Gate threshold voltage V GS(th) = f (T j ) parameter: V GS = V DS, I D = 68 µ 7 5 C V ID 5 VGS(th) 5 max. 5 5 C 3 typ. min. 5 6 8 6 V V GS Typ. gate charge V GS = f (Q Gate ) parameter: I D = pulsed 6 V -6-6 C 8 T j Forward characteristics of body diode I F = f (V SD ) parameter: T j, tp = µs VGS, V DS max,8 V DS max IF 8 6 T j = 5 C typ T j = 5 C typ T j = 5 C (98%) T j = 5 C (98%) 6 8 nc Q Gate Page 7 -..8..6. V 3 V SD
3 valanche SO I R = f (t R ) par.: T j 5 C valanche energy E S = f (T j ) par.: I D =., V DD = 5 V 5 mj 9 IR 8 7 ES 35 3 6 5 T j(strt) =5 C 5 3 5 T j(strt) =5 C 5-3 - - µs t R 5 Drain-source breakdown voltage V (BR)DSS = f (T j ) 98 V 6 8 C 5 T j 6 valanche power losses P R = f (f ) parameter: E R =.mj 9 V(BR)DSS 9 9 88 PR W 86 8 8 8 78 5 76 7 7-6 - 6 C 8 T j 5 Hz 6 f Page 8
7 Typ. capacitances C = f (V DS ) parameter: V GS =V, f= MHz 8 Typ. C oss stored energy E oss =f(v DS ) pf C iss µj 3 C Eoss 8 C oss 6 C rss 3 5 6 V 8 V DS 3 5 6 V 8 V DS Definition of diodes switching characteristics Page 9
P-TO-7-3- 5.9 6.35 ø3.6.3 5.3 9.9 6.7.37.9 5.9 D 7 5.97 x.7..75 D. 6.3..76 MX.. +.5.9 5.6 General tolerance unless otherwise specified: Leadframe parts: ±.5 Package parts: ±. Page
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