200mW, PNP Small Signal Transistor FEATURES Epitaxial planar die construction Surface mount device type Moisture sensitivity level Matte Tin(Sn) lead finish with Nickel(Ni) underplate Pb free and RoHS complian Green compound (Halogen free) with suffix "G" on packing code and prefix "G" on date code MECHANICAL DATA Case: SOT 323 small outline plastic package Terminal: Matte tin plated, lead free, solderable per MILSTD202, Method 208 guaranteed High temperature soldering guaranteed: 260 C/s Weight: 0.005 grams (approximately) SOT323 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T A =25 unless otherwise noted) PARAMETER SYMBOL ALUE UNIT Power Dissipation 200 CollectorBase oltage CollectorEmitter oltage EmitterBase oltage Collector Current Thermal Resistance, Junction to Ambient Junction and Storage Temperature Range T J, T STG 55 to + 50 C Notes:. Transistor mounted on a FR4 printedcircuit board P D CBO CEO EBO I C R θja 50 45 5 0.5 625 mw A K/W PARAMETER SYMBOL MIN MAX UNIT CollectorBase Breakdown oltage at I C = µa (BR)CBO 50 CollectorEmitter Breakdown oltage at I C = ma (BR)CEO 45 EmitterBase Breakdown oltage at I E = µa (BR)EBO 5 Collector Cutoff Current at CB = 20 na I at CB = 20, T J = 50 o CBO C 5 µa Emitter Cutoff Current at EB = 5 I EBO na CollectorEmitter Saturation oltage at I C = 500mA I B = 50 ma CE(sat) 0.7 Transition Frequency CE = 5 I C = ma f = MHz f T 80 MHz at CE =, I C = ma 6W DC Current Gain 25W 40W at CE =, I C = 500 ma h FE 250 60 400 250 600 40 ersion: B4
RATINGS AND CHARACTERISTICS CURES (TA=25 unless otherwise noted) Fig.Total Power Dissipation P tot = f (T S ) Fig.2 Permissible Pulse Load R θja = f (tp) 300 0 250 P tot (mw) 200 50 50 R θja (K/W) 0.5 0.2 0. 0.05 0.02 0.0 0.005 0 0 20 40 60 80 20 40 T S ( o C) D=0 0. 0 00 000 0000 tp (µs) 0 Fig.3 Permissible Pulse Load P totmax / P totdc = f (tp) 000 Fig. 4 Coolector Cutoff Current I CBO = f (T A ) CB =25 D=0 P totmax /P totdc 0. 0.005 0.0 0.02 0.05 I CBO (na) 00 0 max typ 0.2 0.5.E+00.E+0.E+02.E+03.E+04.E+05.E+06 tp tp (µs) (s) 0 50 50 T A ( o C) ersion: B4
RATINGS AND CHARACTERISTICS CURES (TA=25 unless otherwise noted) Fig.5 DC Current Gain h FE = f (I C ) CE = Fig. 6 Transition Frequency f T =f (I C ) CE = 5 0 o C 0 h FE f T (MHz) 25 o C 50 o C 0..0.0.0 0.0 I C (ma) 0 I C (ma) Fig. 7 BaseEmitter Saturation oltage I C = f ( BEsat ), h FE = Fig. 8 CollectorEmitter Saturation oltage I C = f ( CEsat ), h FE = 0.0 50 o C 0 50 o C.0 I C (ma).0 25 o C 50 o C I C (ma) 25 o C 50 o C.0 0. 0 2 3 4 0. 0 0.2 0.4 0.6 0.8 BEsat () CEsat () ersion: B4
ORDERING INFORMATION PART NO. MANUFACTURE PACKING GREEN COMPOUND PACKAGE PACKING MARKING BC8076W (Note) RF G SOT323 3K / 7" Reel 5CR BC80725W RF G SOT323 3K / 7" Reel 5CS BC80740W RF G SOT323 3K / 7" Reel 5CT Note: Manufacture special control, if empty means no special control requirement. EXAMPLE PREFERRED P/N PART NO. MANUFACTURE PACKING GREEN COMPOUND DESCRIPTION BC8076W RFG BC8076W RF G Green compound BC8076WB0 RFG BC8076W B0 RF G Green compound ersion: B4
DIMENSIONS DIM. Unit (mm) Unit (inch) Min Max Min Max A.80 2.20 0.07 0.09 B.5.35 0.05 0.05 C 0.5 0.40 0.0 0.02 D.20.40 0.05 0.06 E 2.00 2.45 0.08 0. F 0.80. 0.03 0.04 SUGGEST PAD LAYOUT DIM. A B C D Unit(mm) Unit(inch) Typ. Typ. 0.65 0.026.6 0.063 0.8 0.03 0.8 0.03 ersion: B4
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