General Purpose ransistors PNP Silicon Moisture Sensitivity Level: 1 ESD Rating Human Body Model: >4 ESD Rating Machine Model: >4 We declare that the material of product compliance with RoHS requirements. S- Prefix for utomotive and Other pplications Requiring Unique Site and ontrol hange Requirements; E-Q11 Qualified and PPP apable. LB857L1G S-LB857L1G Series MXIMUM RINGS ( = 25 unless otherwise noted) Rating Symbol alue Unit ollector-emitter oltage LB856 LB857 LB858, LB859 ollector-base oltage LB856 LB857 LB858, LB859 EO 65 45 BO 8 EmitterBase oltage EBO 5. ollector urrent ontinuous I 1 mdc HERML HRERISIS haracteristic Symbol Max Unit otal Device Dissipation FR5 Board, (Note 1.) = 25 Derate above 25 hermal Resistance, Junction to mbient otal Device Dissipation lumina Substrate, (Note 2.) = 25 Derate above 25 hermal Resistance, Junction to mbient PD 225 1.8 mw mw/ R J 556 /W PD 2.4 mw mw/ R J 417 /W Junction and Storage emperature J, stg 55 to +15 1. FR5 = x.75 x.62 in 2. lumina =.4 x. x.24 in. 99.5% alumina. 1 1 BSE 2 SO2 OLLEOR 2 EMIER MRKING DIGRM xx 1 2 xx= Device Marking (See able Below) Rev.O 1/7
S- DEIE MRKING ND ORDERING INFORMION Device Marking Package Shipping LB856L1G SO-2 /ape&reel S-LB856L1G LB856LG S-LB856LG SO-2 LB856BL1G B SO-2 /ape&reel S-LB856BL1G LB856BLG S-LB856BLG B SO-2 LB857L1G E SO-2 /ape&reel S-LB857L1G LB857L1G S-LB857L1G E SO-2 LB857BL1G F SO-2 /ape&reel S-LB857BL1G LB857BLG S-LB857BLG F SO-2 LB857L1G G SO-2 /ape&reel S-LB857L1G LB857L1G S-LB857L1G G SO-2 LB858L1G J SO-2 /ape&reel S-LB858L1G LB858L1G S-LB858L1G J SO-2 LB858BL1G S-LB858BL1G K SO-2 /ape&reel LB858BLG S-LB858BLG K SO-2 LB858L1G L SO-2 /ape&reel S-LB858L1G LB858LG S-LB858LG L SO-2 LB859BL1G S-LB859BL1G 4B SO-2 /ape&reel LB859BL1G S-LB859BL1G 4B SO-2 LB859L1G 4 SO-2 /ape&reel S-LB859L1G LB859LG S-LB859LG 4 SO-2 Rev.O 2/7
S- ELERIL HRERISIS ( = 25 unless otherwise noted) haracteristic Symbol Min yp Max Unit OFF HRERISIS ollectoremitter Breakdown oltage (I = 1 m) ollectoremitter Breakdown oltage (I = 1 µ, EB = ) ollectorbase Breakdown oltage (I = 1 ) EmitterBase Breakdown oltage (IE = ) ollector utoff urrent (B = ) ollector utoff urrent (B =, = 15 ) ON HRERISIS D urrent Gain (I = m, E = 5. ) LB856, LB857, LB858 LB856B, LB857B, LB858B, LB859B LB857, LB858, LB859 (BR)EO 65 45 (BR)ES 8 (BR)BO 8 (BR)EBO 5. 5. 5. IBO hfe 125 22 42 18 29 52 15 4. 25 475 8 n µ ollectoremitter Saturation oltage (I = 1 m, IB =.5 m) (I = 1 m, IB = 5. m) BaseEmitter Saturation oltage (I = 1 m, IB =.5 m) (I = 1 m, IB = 5. m) BaseEmitter On oltage (I = m, E = 5. ) (I = 1 m, E = 5. ) SMLLSIGNL HRERISIS urrentgain Bandwidth Product (I = 1 m, E = 5. dc, f = 1 MHz) Output apacitance (B = 1, f = MHz) E(sat) BE(sat) BE(on).6.7.9..65.75.82 f 1 MHz ob 4.5 pf Noise Figure (I = m, E = 5. dc, RS = kω, f = khz, BW = 2 Hz) LB856, LB857, LB858 Series LB859 Series NF 1 4. db Rev.O /7
S- LB857/ LB858 h FE, NORMLIZED D URREN GIN 1.5 E = 1 = 25.7.5..5 5. 1 2 1 2, OLGE (OLS).9 = 25 @ I /I =1 BE(sat) B.8.7.6 @ = 1 BE(on) E.5.4..1 @ I /I = 1 E(sat) B.1.5 5. 1 2 1 I, OLLEOR URREN (mdc) Figure 1. Normalized D urrent Gain I, OLLEOR URREN (mdc) Figure 2. Saturation and On oltages E, OLLEOR EMIER OLGE () 1.6 1.2.8.4 I = 1 m I = 2 m I = m = 25 I = 2 m I = 1 m θ B, EMPERURE OEFFIIEN (m/ ) 1.2 1.6 2.4 2.8 55 to +125.2.1 1 2 1 1 I, BSE URREN (m) B Figure. ollector Saturation Region I, OLLEOR URREN (m) Figure 4. BaseEmitter emperature oefficient 4 1., OLGE (OLS) 7. 5.. ib ob =25 f, URREN GIN BNDWIDH PRODU (MHz) 2 1 8 6 4 2 =1 E = 25.4.6 4. 6. 1 2 4.5. 5. 1 2, REERSE OLGE (OLS) R Figure 5. apacitances I, OLLEOR URREN (mdc) Figure 6. urrentgain Bandwidth Product Rev.O 4/7
S- LB856 h FE, D URREN GIN (NORMLIZED), OLLEOR EMIER OLGE (OLS) E.5 1.6 1.2.8.4 = 5. E = 25 I = 1 m I, OLLEOR URREN (m) Figure 7. D urrent Gain 2m 1m I, BSE URREN (m) B Figure 9. ollector Saturation Region 2m θ B, EMPERURE OEFFIIEN (m/ ), OLGE (OLS).8.6.4 1.4 1.8 2.2 2.6 J = 25 BE(sat) @ I /I B = 1 BE @ E = 5. E(sat) @ I /I B = 1.1 5.12 12.5 5. 1 2 1 2 m J = 25.2.5.1.5 5. 1 2 I, OLLEOR URREN (m) Figure 8. On oltage θ B for BE 55 to 125..5 5. 1 2 1 2 I, OLLEOR URREN (m) Figure 1. BaseEmitter emperature oefficient, PINE (pf) 4 2 1 8. 6. 4. ib J = 25 ob f, URREN GIN BNDWIDH PRODU E = 5..1.5 5. 1 2 1 1 1 5 2 1 5 2, REERSE OLGE (OLS) R Figure 11. apacitance I, OLLEOR URREN (m) Figure 12. urrentgain Bandwidth Product Rev.O 5/7
S- I, OLLEOR URREN (m) r( t), RNSIEN HERML RESISNE (NORMLIZED).7.5..1.7.5 D=.5.1.5 SINGLE PULSE SINGLE PULSE = 25 J = 25 B558 B557 B556 BONDING WIRE LIMI HERML LIMI SEOND BREKDOWN LIMI E, OLLEOREMIER OLGE () Figure 14. ctive Region Safe Operating rea 1s P (pk) t, IME (ms) Figure 1. hermal Response ms t 1 t 2 Z θj (t) = r(t) R θj R θj = 8. /W MX Z θj (t) = r(t) R θj R θj = 2 /W MX D URES PPLY FOR POWER PULSE RIN SHOWN RED IME t 1 J(pk) = P (pk) R θj (t)..2 DUY YLE, D = t /t 1 2.1.1.5 5. 1 2 5 1 2 5 k k 5.k 1k 2 1 1 5..5 1 45 65 1 he safe operating area curves indicate I E limits of the transistor that must be observed for reliable operation. ollector load lines for specific circuits must fall below the limits indicated by the applicable curve. he data of Figure 14 is based upon = 15 ; or J(pk) is variable depending upon conditions. Pulse curves are valid for duty cycles to 1% provided < 15. may be calculated from the data in Figure 1. t high case or ambient J(pk) J(pk) temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by the secondary breakdown. Rev.O 6/7
S- SO-2 D L 1 2 G H B S K J NOES: 1. DIMENSIONING ND OLERNING PER NSI Y14.5M, 1982. 2. ONROLLING DIMENSION: INH. DIM INHES MILLIMEERS MIN MX MIN MX.112.1197 2.8.4 B.472.551 1.2 1.4.5.44.89 1.11 D.15.2.7.5 G.71.87 1.78 4 H.5.4.1.1 J.4.7.85.177 K.14.285.5.69 L.5.41.89 2 S.8.19 2.1 2.64.177.26.45.6.7.95.7.95.79.5.9.1.8 inches mm Rev.O 7/7