Preferred Devices General Purpose Transistors PNP Silicon Features PbFree Packages are Available COLLECTOR 1 BASE MAXIMUM RATINGS ( unless otherwise noted) Rating Symbol alue Unit 2 EMITTER Collector-Emitter oltage BC856 BC857 BC858, BC859 Collector-Base oltage BC856 BC857 BC858, BC859 CEO CBO 65 45 0 80 50 0 EmitterBase oltage EBO 5.0 1 2 SOT2 CASE 18 STYLE 6 Collector Current Continuous I C 100 madc Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. MARKING DIAGRAM THERMAL CHARACTERISTICS Characteristic Symbol Max Unit xxm Total Device Dissipation FR5 Board, (Note 1) Derate above 25 C Thermal Resistance, JunctiontoAmbient Total Device Dissipation Alumina Substrate, (Note 2) Derate above 25 C Thermal Resistance, JunctiontoAmbient P D 225 1.8 mw mw/ C R JA 556 C/W P D 00 2.4 mw mw/ C R JA 417 C/W 1 2 xx = Device Code M = Date Code ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 6 of this data sheet. Junction and Storage Temperature T J, T stg 55 to +150 1. FR5 = x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0. x 0.024 in 99.5% alumina. C Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2004 June, 2004 Rev. 8 1 Publication Order Number: BC856ALT1/D
ELECTRICAL CHARACTERISTICS ( unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS CollectorEmitter Breakdown oltage BC856 Series (BR)CEO 65 (I C = 10 ma) BC857 Series BC858, BC859 Series 45 0 CollectorEmitter Breakdown oltage BC856 Series (I C = 10 A, EB = 0) BC857A, BC857B Only BC858, BC859 Series CollectorBase Breakdown oltage BC856 Series (I C = 10 A) BC857 Series BC858, BC859 Series EmitterBase Breakdown oltage BC856 Series (I E = A) BC857 Series BC858, BC859 Series Collector Cutoff Current ( CB = 0 ) Collector Cutoff Current ( CB = 0, T A = 150 C) (BR)CES (BR)CBO 80 50 0 80 50 0 (BR)EBO 5.0 5.0 5.0 I CBO 15 4.0 na A ON CHARACTERISTICS DC Current Gain BC856A, BC857A, BC858A (I C = 10 A, CE = 5.0 ) BC856B, BC857B, BC858B BC857C, BC858C h FE 90 150 270 (I C = ma, CE = 5.0 ) BC856A, BC857A, BC858A BC856B, BC857B, BC858B, BC859B BC857C, BC858C, BC859C 125 220 420 180 290 520 250 475 800 CollectorEmitter Saturation oltage (I C = 10 ma, I B = 0.5 ma) (I C = 100 ma, I B = 5.0 ma) BaseEmitter Saturation oltage (I C = 10 ma, I B = 0.5 ma) (I C = 100 ma, I B = 5.0 ma) BaseEmitter On oltage (I C = ma, CE = 5.0 ) (I C = 10 ma, CE = 5.0 ) SMALLSIGNAL CHARACTERISTICS CurrentGain Bandwidth Product (I C = 10 ma, CE = 5.0 dc, f = 100 MHz) Output Capacitance ( CB = 10, f = MHz) CE(sat) BE(sat) BE(on) 0.6 0.7 0.9 0. 0.65 0.75 0.82 f T 100 MHz C ob 4.5 pf Noise Figure (I C = ma, CE = 5.0 dc, R S = k, f = khz, BW = 200 Hz) BC856, BC857, BC858 Series BC859 Series NF 10 4.0 db 2
BC857/BC858/BC859 hfe, NORMALIZED DC CURRENT GAIN 1.5 0.7 0.5 0. CE = 10 I C, COLLECTOR CURRENT (madc), OLTAGE (OLTS) 0.9 0.8 0.7 0.6 0.5 0.4 0. 0.1 BE(sat) @ I C /I B = 10 BE(on) @ CE = 10 CE(sat) @ I C /I B = 10 0 0.5 5.0 10 20 50 100 200 0.1 0.5 5.0 10 20 50 100 I C, COLLECTOR CURRENT (madc) Figure 1. Normalized DC Current Gain Figure 2. Saturation and On oltages CE, COLLECTOREMITTER OLTAGE () 1.6 1.2 0.8 0.4 0 I C = 10 ma I C = 20 ma I C = 50 ma 0.02 0.1 10 I B, BASE CURRENT (ma) I C = 200 ma I C = 100 ma 20 B, TEMPERATURE COEFFICIENT (m/ C) θ 1.2 1.6 2.4 2.8 55 C to +125 C 10 100 Figure. Collector Saturation Region Figure 4. BaseEmitter Temperature Coefficient C, CAPACITANCE (pf) 10 7.0 5.0.0 0.4 C ib C ob 0.6 4.0 6.0 10 20 0 40 R, REERSE OLTAGE (OLTS) f, T CURRENTGAIN BANDWIDTH PRODUCT (MHz) 400 00 200 150 100 80 60 40 0 20 0.5 I C, COLLECTOR CURRENT (madc) CE = 10.0 5.0 10 20 0 50 Figure 5. Capacitances Figure 6. CurrentGain Bandwidth Product
BC856 hfe, DC CURRENT GAIN (NORMALIZED) 0.5 CE = 5.0, OLTAGE (OLTS) 0.8 0.6 0.4 T J = 25 C BE(sat) @ I C /I B = 10 BE @ CE = 5.0 CE(sat) @ I C /I B = 10 0.1 5.0 10 20 50 100 200 0 0.5 5.0 10 20 50 100 200 Figure 7. DC Current Gain Figure 8. On oltage CE, COLLECTOREMITTER OLTAGE (OLTS) 1.6 1.2 0.8 0.4 I C = 10 ma T J = 25 C 20 ma 50 ma 0 0.02 0.05 0.1 0.5 5.0 10 I B, BASE CURRENT (ma) 100 ma 200 ma 20 B, TEMPERATURE COEFFICIENT (m/ C) θ 1.4 1.8 B for BE 55 C to 125 C 2.2 2.6.0 0.5 5.0 10 20 50 100 200 Figure 9. Collector Saturation Region Figure 10. BaseEmitter Temperature Coefficient C, CAPACITANCE (pf) 40 T J = 25 C 20 C ib 10 8.0 6.0 C ob 4.0 0.1 0.5 5.0 10 20 50 100 R, REERSE OLTAGE (OLTS) f, T CURRENTGAIN BANDWIDTH PRODUCT 500 200 100 50 20 CE = 5.0 10 100 Figure 11. Capacitance Figure 12. CurrentGain Bandwidth Product 4
r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 0.7 0.5 0. 0.1 0.07 0.05 0.0 0.02 0.01 0.1 D = 0.5 0.1 0.05 SINGLE PULSE SINGLE PULSE 0.5 5.0 10 20 50 100 200 500 k k 5.0 k 10 k t, TIME (ms) P (pk) t 1 t2 DUTY CYCLE, D = t 1 /t 2 Z JC (t) = r(t) R JC R JC = 8. C/W MAX Z JA (t) = r(t) R JA R JA = 200 C/W MAX D CURES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t 1 T J(pk) T C = P (pk) R JC (t) Figure 1. Thermal Response IC, COLLECTOR CURRENT (ma) 200 100 50 10 5.0 T J = 25 C BONDING WIRE LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT ms 5.0 10 0 45 65 100 CE, COLLECTOREMITTER OLTAGE () Figure 14. Active Region Safe Operating Area 1 s BC558, BC559 BC557 BC556 The safe operating area curves indicate I C CE limits of the transistor that must be observed for reliable operation. Collector load lines for specific circuits must fall below the limits indicated by the applicable curve. The data of Figure 14 is based upon T J(pk) = 150 C; T C or T A is variable depending upon conditions. Pulse curves are valid for duty cycles to 10% provided T J(pk) 150 C. T J(pk) may be calculated from the data in Figure 1. At high case or ambient temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by the secondary breakdown. 5
ORDERING INFORMATION Device Marking Package Shipping BC856ALT1 A SOT2,000 / Tape & Reel BC856ALT A SOT2 10,000 / Tape & Reel BC856BLT1 B SOT2 BC856BLT1G B SOT2 (PbFree),000 / Tape & Reel BC856BLT B SOT2 10,000 / Tape & Reel BC857ALT1 E SOT2,000 / Tape & Reel BC857BLT1 F SOT2,000 / Tape & Reel BC857BLT F SOT2 BC857BLTG F SOT2 (PbFree) 10,000 / Tape & Reel BC857CLT1 G SOT2,000 / Tape & Reel BC857CLT1G G SOT2 (PbFree) BC858ALT1 J SOT2 BC858ALT1G J SOT2 (PbFree) BC858BLT1 K SOT2 BC858BLT1G K SOT2 (PbFree),000 / Tape & Reel,000 / Tape & Reel,000 / Tape & Reel BC858BLT L SOT2 10,000 / Tape & Reel BC858CLT1 L SOT2 BC858CLT1G L SOT2 (PbFree) BC858CLT L SOT2 BC858CLTG L SOT2 (PbFree),000 / Tape & Reel 10,000 / Tape & Reel BC859BLT1 4B SOT2,000 / Tape & Reel BC859BLT 4B SOT2 10,000 / Tape & Reel BC859CLT1 4C SOT2,000 / Tape & Reel BC859CLT 4C SOT2 10,000 / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 6
PACKAGE DIMENSIONS SOT2 (TO26) CASE 1809 ISSUE AI D 1 A L 2 G H B S C K J NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH.. MAXIUMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 1801, 02, AND 06 OBSOLETE, NEW STANDARD 1809. INCHES MILLIMETERS DIM MIN MAX MIN MAX A 0.1102 0.1197 2.80.04 B 0.0472 0.0551 1.20 1.40 C 0.085 0.0498 0.99 1.26 D 0.0140 0.0200 0.6 0.50 G 0.0670 0.0826 1.70 2.10 H 0.0040 0.0098 0.10 5 J 0.004 0.0070 0.085 0.177 K 0.0180 0.026 0.45 0.60 L 0.050 0.0401 0.89 2 S 0.080 0.0984 2.10 2.50 0.0177 0.026 0.45 0.60 STYLE 6: PIN 1. BASE 2. EMITTER. COLLECTOR SOLDERING FOOTPRINT* 0.95 0.07 0.95 0.07 0.079 0.9 0.05 0.8 0.01 SCALE 10:1 mm inches *For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 7
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 6112, Phoenix, Arizona 85082112 USA Phone: 4808297710 or 80044860 Toll Free USA/Canada Fax: 4808297709 or 80044867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 8002829855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 291 Kamimeguro, Meguroku, Tokyo, Japan 150051 Phone: 81577850 8 ON Semiconductor Website: Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. BC856ALT1/D