Powerex, Inc., 73 Pavilion Lane, Youngwood, Pennsylvania 5697 (724) 925-7272 www.pwrx.com Six IGBTMOD + Brake NX-S Series Module AH AN AC AD AE H AK AJ A D E F G AK AJ AP AT AR AQ AS C AX BB BC BD DETAIL "A" T S U V AF AG BE R Q P R Q P P(35) B(4) GB(6) EB(5) N(36) GUP(34) EUP(33) GUN(30) EUN(29) Outline Drawing and Circuit Diagram H Q R P W X Y Z Z Dimensions Inches Millimeters A 5.39 36.9 B 3.03 77. C 0.67 7.0 D 4.79 2.7 E 4.33±0.02 0.0±0.5 F 3.89 99.0 G 3.72 94.5 H 0.83 2.4 J 0.37 6.5 K 2.44 62.0 L 2.26 57.5 M.97±0.02 50.0±0.5 N.53 39.0 P 0.24 6.0 Q 0.48 2.0 R 0.67 7.0 S.53 39.0 T 0.87 22.0 U 0.55 4.0 V 0.54 3.64 W 0.33 8.5 X 0.53 3.5 Y 0.8 20.7 Z 0.9 22.86 AA 0.22 Dia. 5.5 Dia. AB M5 M5 AC 0.67 7.0 J 35 36 J 34 33 32 3 30 29 28 27 26 25 24 23 22 2 20 9 8 7 6 5 4 3 AA(4 PLACES) GVP(26) EVP(25) GVN(22) EVN(2) DETAIL "A" 2 3 4 GWP(8) EWP(7) U() V(2) W(3) Z GWN(4) EWN(3) 2 0 9 8 7 6 5 AB (6 PLACES) TH () N M L K B NTC DETAIL "B" TH2 (0) AZ BA Dimensions Inches Millimeters AD 0.5 3.0 AE 0.2 3.0 AF 0.2 5.4 AG 0.49 2.5 AH 0.8 20.5 AJ 0.30 7.75 AK 0.28 7.25 0.5 3.8 0.45.44 AN 0.4 3.5 AP 0.6 4.06 AQ 0.78 20.05 AR 0.03 0.8 AS 0.27 7.0 AT 0.6 4.2 AU 0.6 5.48 AV 0.60 5.24 AW 0.46.66 AX 0.04.5 AY 0.02 0.65 AZ 0.29 7.4 BA 0.24 6.2 BB 0.49 2.5 BC 0.7 Dia. 4.3 Dia. BD 0.0 Dia. 2.5 Dia. BE 0.08 Dia. 2.Dia. AU AV AW AX AY DETAIL "B" *L PIN DIMENSIONS WITHIN A TOLERANCE OF ±0.5 Description: Powerex IGBTMOD Modules are designed for use in switching applications. Each module consists of six IGBT Transistors in a three phase bridge configuration and a seventh IGBT with freewheel diode for dynamic braking. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Features: Low Drive Power Low V CE(sat) Discrete Super-Fast Recovery Free-Wheel Diode Isolated Baseplate for Easy Heat Sinking Applications: AC Motor Control Motion/Servo Control Photovoltaic/Fuel Cell Ordering Information: Example: Select the complete module number you desire from the table below -i.e. is a 200V (V CES ), 75 Ampere Six-IGBTMOD + Brake Power Module. Type Current Rating V CES Amperes Volts (x 50) CM 75 24
Powerex, Inc., 73 Pavilion Lane, Youngwood, Pennsylvania 5697 (724) 925-7272 www.pwrx.com Absolute Maximum Ratings, T j = 25 C unless otherwise specified Characteristics Symbol Units Maximum Junction Temperature T j(max) +75 C Operating Power Device Junction Temperature T j(op) -40 to 50 C Storage Temperature T stg -40 to 25 C Mounting Torque, M5 Mounting Screws 3 in-lb Mounting Torque, M5 Main Terminal Screws 3 in-lb Module Weight (Typical) 330 Grams Isolation Voltage (Terminals to Baseplate, f = 60Hz, AC minute) V ISO 2500 V rms Inverter Sector Collector-Emitter Voltage (V GE = 0V) V CES 200 Volts Gate-Emitter Voltage (V CE = 0V) V GES ±20 Volts Collector Current (DC, T C = 2 C) *,*5 I C 75 Amperes Collector Current (Pulse) *4 I CRM 50 Amperes Total Power Dissipation (T C = 25 C) *,*5 P tot 600 Watts Emitter Current, Free Wheeling Diode Forward Current (T C = 25 C) *,*5 I *3 E 75 Amperes Emitter Current, Free Wheeling Diode Forward Current (Pulse) *4 I *3 ERM 50 Amperes Brake Sector Collector-Emitter Voltage (V GE = 0V) V CES 200 Volts Gate-Emitter Voltage (V CE = 0V) V GES ±20 Volts Collector Current (DC, T C = 25 C) *,*5 I C 50 Amperes Collector Current (Pulse) *4 I CRM 00 Amperes Total Power Dissipation (T C = 25 C) *,*5 P tot 425 Watts Repetitive Peak Reverse Voltage V RRM *3 200 Volts Forward Current (T C = 25 C) *,*5 I F *3 50 Amperes Forward Current (Pulse) *4 I FM *3 00 Amperes * Case temperature (T C ) and heatsink temperature (T f ) measured point is just under the chips. *4 Pulse width and repetition rate should be such that device junction temperature (T j ) does not exceed T j(max) rating. *5 Junction temperature (T j ) should not increase beyond maximum junction temperature (T j(max) ) rating. 2
Powerex, Inc., 73 Pavilion Lane, Youngwood, Pennsylvania 5697 (724) 925-7272 www.pwrx.com Electrical and Mechanical Characteristics, T j = 25 C unless otherwise specified Inverter Sector Collector Cutoff Current I CES V CE = V CES, V GE = 0V ma Gate Leakage Current I GES ±V GE = V GES, V CE = 0V 0.5 µa Gate-Emitter Threshold Voltage V GE(th) I C = 7.5mA, V CE = 0V 5.4 6 6.6 Volts Collector-Emitter Saturation Voltage V CE(sat) I C = 75A, V GE = 5V, T j = 25 C.7 2.5 Volts (Chip) I C = 75A, V GE = 5V, T j = 25 C.9 Volts I C = 75A, V GE = 5V, T j = 50 C.95 Volts Collector-Emitter Saturation Voltage V CE(sat) I C = 75A, V GE = 5V, T j = 25 C *6.8 2.25 Volts (Terminal) I C = 75A, V GE = 5V, T j = 25 C *6 2.0 Volts I C = 75A, V GE = 5V, T j = 50 C *6 2.05 Volts Input Capacitance C ies 7.5 nf Output Capacitance C oes V GE = 0V, V CE = 0V.0 nf Reverse Transfer Capacitance C res 0.3 nf Total Gate Charge Q G V CC = 600V, I C = 75A, V GE = 5V 75 nc Inductive Turn-on Delay Time t d(on) 300 ns Load Turn-on Rise Time t r V CC = 600V, I C = 75A, *7 200 ns Switch Turn-off Delay Time t d(off) V GE = ±5V, 600 ns Time Turn-off Fall Time t f R G = 36Ω, Inductive Load 300 ns Reverse Recovery Time t rr *3 I E = 75A 300 ns Reverse Recovery Charge Q rr *3 4.0 µc Turn-on Switching Loss per Pulse E on V CC = 600V, I C (I E ) = 75A, *7 2.5 mj Turn-off Switching Loss per Pulse E off V GE = ±5V, R G = 36Ω, 8 mj Reverse Recovery Loss per Pulse E rec *3 T j = 50 C, Inductive Load 4.5 mj Emitter-Collector Voltage V EC *3 I E = 75A, V GE = 0V, T j = 25 C.7 2.5 Volts (Chip) I E = 75A, V GE = 0V, T j = 25 C.7 Volts I E = 75A, V GE = 0V, T j = 50 C.7 Volts Emitter-Collector Voltage V EC *3 I E = 75A, V GE = 0V, T j = 25 C *6.8 2.25 Volts (Terminal) I E = 75A, V GE = 0V, T j = 25 C *6.8 Volts Thermal and Mechanical Characteristics, T j = 25 C unless otherwise specified I E = 75A, V GE = 0V, T j = 50 C *6.8 Volts Thermal Resistance, Junction to Case * R th(j-c) Q Per IGBT 0.25 K/W Thermal Resistance, Junction to Case * R th(j-c) D Per FWDi 0.4 K/W Internal Gate Resistance r g Per Switch 0 Ω * Case temperature (T C ) and heatsink temperature (T f ) measured point is just under the chips. *6 Pulse width and repetition rate should be such as to cause negligible temperature rise. *7 Recommended maximum collector supply voltage V CC is 800V dc. 3
Powerex, Inc., 73 Pavilion Lane, Youngwood, Pennsylvania 5697 (724) 925-7272 www.pwrx.com Electrical and Mechanical Characteristics, T j = 25 C unless otherwise specified Brake Sector Collector Cutoff Current I CES V CE = V CES, V GE = 0V ma Gate Leakage Current I GES ±V GE = V GES, V CE = 0V 0.5 µa Gate-Emitter Threshold Voltage V GE(th) I C = 5mA, V CE = 0V 5.4 6 6.6 Volts Collector-Emitter Saturation Voltage V CE(sat) I C = 50A, V GE = 5V, T j = 25 C.7 2.5 Volts (Chip) I C = 50A, V GE = 5V, T j = 25 C.9 Volts I C = 50A, V GE = 5V, T j = 50 C.95 Volts Collector-Emitter Saturation Voltage V CE(sat) I C = 50A, V GE = 5V, T j = 25 C *6.8 2.25 Volts (Terminal) I C = 50A, V GE = 5V, T j = 25 C *6 2.0 Volts I C = 50A, V GE = 5V, T j = 50 C *6 2.05 Volts Input Capacitance C ies 5.0 nf Output Capacitance C oes V GE = 0V, V CE = 0V.0 nf Reverse Transfer Capacitance C res 0.08 nf Total Gate Charge Q G V CC = 600V, I C = 50A, V GE = 5V 7 nc Repetitive Peak Reverse Current I *3 RRM V R = V RRM ma Forward Voltage Drop V *3 EC I E = 50A, V GE = 0V, T j = 25 C.7 2.5 Volts (Chip) I E = 50A, V GE = 0V, T j = 25 C.7 Volts I E = 50A, V GE = 0V, T j = 50 C.7 Volts Forward Voltage Drop V *3 EC I E = 50A, V GE = 0V, T j = 25 C *6.8 2.25 Volts (Terminal) I E = 50A, V GE = 0V, T j = 25 C *6.8 Volts I E = 50A, V GE = 0V, T j = 50 C *6.8 Volts Thermal and Mechanical Characteristics, T j = 25 C unless otherwise specified Thermal Resistance, Junction to Case * R th(j-c) Q Per IGBT 0.35 K/W Thermal Resistance, Junction to Case * R th(j-c) D Per Clamp Diode 0.63 K/W Internal Gate Resistance R g Per Switch 0 Ω NTC Thermistor Sector, T j = 25 C unless otherwise specified Zero Power Resistance R T C = 25 C 4.85 5.00 5.5 kω Deviation of Resistance R/R T C = 00 C, R 00 = 493Ω 7.3 +7.8 % B Constant B (25/50) Approximate by Equation *9 3375 K Power Dissipation P 25 T C = 25 C 0 mw * Case temperature (T C ) and heatsink temperature (T f ) measured point is just under the chips. *2 Typical value is measured by using thermally conductive grease of λ = 0.9 [W/(m K)]. *6 Pulse width and repetition rate should be such as to cause negligible temperature rise. *9 B (25/50) = In( R 25 )/( ) R25 ; Resistance at Absolute Temperature T 25 [K], R 50 ; resistance at Absolute Temperature T 50 [K], R 50 T 25 T 50 T 25 = 25 [ C] + 273.5 = 298.5 [K], T 50 = 50 [ C] + 273.5 = 323.5 [K] 4
Powerex, Inc., 73 Pavilion Lane, Youngwood, Pennsylvania 5697 (724) 925-7272 www.pwrx.com Module, T j = 25 C unless otherwise specified Lead Resistance (Main Terminals-Chip) R lead T C = 25 C (Per Switch) 2.4 mω Contact Thermal Resistance * R th(c-f) Thermal Grease Applied 0.05 K/W (Case to Heatsink) (Per Module) *2 * Case temperature (T C ) and heatsink temperature (T f ) measured point is just under the chips. *2 Typical value is measured by using thermally conductive grease of λ = 0.9 [W/(m K)]. 5