Silizium-Pin-Fotodiode mit Tageslichtsperrfilter Silicon Pin Photodiode with Daylight Filter Lead (Pb) Free Product - RoHS Compliant (R18R) (R18R) Wesentliche Merkmale Speziell geeignet für Anwendungen bei 88 nm Kurze Schaltzeit (typ. 2 ns) SMT-Bauform, geeignet für IR-Reflow Löten Anwendungen IR-Fernsteuerung von Fernseh- und Rundfunkgeräten, Videorecordern, Lichtdimmern, Gerätefernsteuerungen Lichtschranken für Gleich- und Wechsellichtbetrieb Features Especially suitable for applications of 88 nm Short switching time (typ. 2 ns) SMT package, suitable for IR-reflow soldering Applications IR remote control of hi-fi and TV sets, video tape recorders, dimmers, remote controls of various equipment Photointerrupters Typ Type (R18R) Bestellnummer Ordering Code Q651A2672 Q651A4263 25-12-22 1
, (R18R) Grenzwerte Maximum Ratings Bezeichnung Parameter Betriebs- und Lagertemperatur Operating and storage temperature range Sperrspannung Reverse voltage Verlustleistung, T A = 25 C Total power dissipation Wert Value T op ; T stg 4 + C V R 2 V Einheit Unit P tot 1 mw Kennwerte (T A = 25 C, λ = 88 nm) Characteristics Bezeichnung Parameter Fotostrom Photocurrent V R = 5 V, E e = 1 mw/cm 2 Wellenlänge der max. Fotoempfindlichkeit Wavelength of max. sensitivity Spektraler Bereich der Fotoempfindlichkeit S = % von S max Spectral range of sensitivity S = % of S max Bestrahlungsempfindliche Fläche Radiant sensitive area Halbwinkel Half angle Dunkelstrom, V R = V Dark current Spektrale Fotoempfindlichkeit Spectral sensitivity Quantenausbeute Quantum yield Leerlaufspannung, E e =.5 mw/cm 2 Open-circuit voltage Kurzschlussstrom, E e =.5 mw/cm 2 Short-circuit current Wert Value I P 34 ( 25) µa λ S max 88 nm λ 73 1 nm Einheit Unit A 4.84 mm 2 ϕ ± Grad deg. I R 2 ( 3) na S λ.65 A/W η.9 Electrons Photon V O 33 ( 2) mv I SC 16 µa 25-12-22 2
, (R18R) Kennwerte (T A = 25 C, λ = 88 nm) Characteristics (cont d) Bezeichnung Parameter Anstiegs- und Abfallzeit des Fotostromes Rise and fall time of the photocurrent R L = Ω; V R = 5 V; λ = 8 nm; I p = 8 µa Durchlassspannung, I F = ma, E = Forward voltage Kapazität, V R = V, f = 1 MHz, E = Capacitance t r, t f 2 ns V F 1.3 V C 48 pf Temperaturkoeffizient von V O TC V 2.6 mv/k Temperature coefficient of V O Temperaturkoeffizient von I SC TC I.18 %/K Temperature coefficient of I SC Rauschäquivalente Strahlungsleistung Noise equivalent power V R = V Nachweisgrenze, V R = V Detection limit Wert Value NEP 3.6 14 D* 6.1 12 Einheit Unit W ----------- Hz cm Hz -------------------------- W 25-12-22 3
, (R18R) Relative Spectral Sensitivity S rel = f (λ) S rel % OHF143 Photocurrent I P = f (E e ), V R = 5 V Open-Circuit Voltage V O = f (E e ) Ι P OHF56 3 4 µa mv V O Total Power Dissipation P tot = f (T A ) 1 mw P tot 14 OHF958 8 7 2 V O 3 12 1 2 8 4 3 2 4 Dark Current I R = f (V R ), E = Ι R 4 pa 3 8 nm 12 λ OHFD1781-1 1 2 2 µw/cm 4 E e Capacitance C = f (V R ), f = 1 MHz, E = C pf 4 Ι P OHF1778 1 Dark Current I R = f (T A ), V R = V, E = Ι R 4 2 3 na 2 2 4 8 C TA OHF82 2 3 1 2 5 15 V 2 V R Directional Characteristics S rel = f (ϕ) -2-1 1 V 2 V R -1 2 4 8 C TA 4 3 2 ϕ 1. OHF142.8.6 7.4 8.2 9 1..8.6.4 2 4 8 12 25-12-22 4
, (R18R) Maßzeichnung Package Outlines 1.2 (.47) 1.1 (.43)...1 (...4) 4.5 (.177) 4.3 (.169).9 (.35).7 (.28) 1.7 (.67) 1.5 (.59) 4. (.157) 3.7 (.146).3 (.12) Chip position 1.1 (.43).9 (.35) 6.7 (.264) 6.2 (.244)...5 1.6 (.63).2 (.8).1 (.4) ±.2 (.8) Photosensitive area Cathode lead 2.2 (.87) x 2.2 (.87) GEOY6861 (R18R) Maße werden wie folgt angegeben: mm (inch) / Dimensions are specified as follows: mm (inch). 25-12-22 5
, (R18R) Lötbedingungen Vorbehandlung nach JEDEC Level 4 Soldering Conditions Preconditioning acc. to JEDEC Level 4 IR-Reflow Lötprofil für bleifreies Löten (nach J-STD-2B) IR Reflow Soldering Profile for lead free soldering (acc. to J-STD-2B) T 3 C 2 2 255 C 24 C 217 C Maximum Solder Profile Recommended Solder Profile Minimum Solder Profile s min 3 s max OHLA687 + C 2 C -5 C 245 C ±5 C +5 C 235 C - C 1 12 s max s max Ramp Down 6 K/s (max) Ramp Up 3 K/s (max) 25 C 1 2 2 s 3 Published by OSRAM Opto Semiconductors GmbH Wernerwerkstrasse 2, D-9349 Regensburg www.osram-os.com All Rights Reserved. Attention please! The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved. Due to technical requirements components may contain dangerous substances. For information on the types in question please contact our Sales Organization. Packing Please use the recycling operators known to you. We can also help you get in touch with your nearest sales office. By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred. Components used in life-support devices or systems must be expressly authorized for such purpose! Critical components 1, may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS. 1 A critical component is a component usedin a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system. 2 Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered. 25-12-22 6