Preliminary Technical Information X2-Class Power MOSFET S I D25 R DS(on) = 65V = A 15m N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings S = 25 C to 15 C 65 V V DGR = 25 C to 15 C, R GS = 1M 65 V S Continuous 3 V M Transient V I D25 = 25 C A I DM = 25 C, Pulse Width Limited by M A I A = 25 C A E AS = 25 C 6 mj dv/dt I S I DM, V DD S, 15 C 5 V/ns P D = 25 C 39 W -55... +15 C M 15 C T stg -55... +15 C T L Maximum Lead Temperature for Soldering 3 C T SOLD 1.6 mm (.62in.) from Case for s 26 C F C Mounting Force (TO-263).65 / 2.2..1.6 N/lb M d Mounting Torque (TO-2 & TO-7) 1.13 / Nm/lb.in Weight TO-263 2.5 g TO-2 3. g TO-7 6. g TO-263 AA (IXTA) Features G S TO-2AB (IXTP) G D S TO-7 (IXTH) G D S D (Tab) D (Tab) D (Tab) G = Gate D = Drain S = Source Tab = Drain International Standard Packages Low R DS(ON) and Q G Avalanche Rated Low Package Inductance Symbol Test Conditions Characteristic Values ( = 25 C, Unless Otherwise Specified) Min. Typ. Max. BS = V, I D = 25μA 65 V Advantages High Power Density Easy to Mount Space Savings (th) =, I D = 25μA 3. 5. V I GSS = 3V, = V na I DSS = S, = V 5 A = 5 C μa R DS(on) = V, I D =.5 I D25, Note 1 15 m Applications Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters PFC Circuits AC and DC Motor Drives Robotics and Servo Controls 15 IXYS CORPORATION, All Rights Reserved DS69A(/15)
Symbol Test Conditions Characteristic Values ( = 25 C, Unless Otherwise Specified) Min. Typ. Max g fs = V, I D =.5 I D25, Note 1 13 22 S R Gi Gate Input Resistance 1.1 C iss 6 pf C oss = V, = 25V, f = 1MHz 17 pf C rss 1.2 pf Effective Output Capacitance C o(er) Energy related V 3 pf GS = V C o(tr) 336 pf Time related =. S t d(on) ns Resistive Switching Times t r 25 ns = V, =.5 S, I D =.5 I D25 t d(off) 5 ns R G = (External) t f 19 ns Q g(on) 36 nc Q gs = V, =.5 S, I D =.5 I D25 9 nc Q gd 13 nc R thjc.32 C/W R thcs TO-2.5 C/W TO-7.25 C/W Source-Drain Diode Symbol Test Conditions Characteristic Values ( = 25 C, Unless Otherwise Specified) Min. Typ. Max I S = V A I SM Repetitive, pulse Width Limited by M 96 A V SD I F = I S, = V, Note 1 1. V t rr I 39 ns F = A, -di/dt = A/μs Q RM 3.3 μc V I R = V RM 17 A Note 1. Pulse test, t 3 s, duty cycle, d 2%. PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered,35,592,931, 5,9,961 5,237,1 6,2,665 6,,65B1 6,63,3 6,727,55 7,5,73B2 7,157,33B2 by one or more of the following U.S. patents:,6,72 5,17,5 5,63,37 5,31,25 6,259,3B1 6,53,33 6,7,5B2 6,759,692 7,63,975B2,1,6 5,3,796 5,17,117 5,6,715 6,36,72B1 6,53,55 6,7,63 6,771,7B2 7,71,537
Fig. 1. Output Characteristics @ = 25ºC Fig. 2. Extended Output Characteristics @ = 25ºC = V V 5 = V V 7V 6V 3 7V 6V 5V.5 1 1.5 2 2.5 3 3.5 - Volts 5V 5 15 25 3 - Volts Fig. 3. Output Characteristics @ = 5ºC = V 7V 3. 3. 3. Fig.. R DS(on) Normalized to I D = A Value vs. Junction Temperature = V 6V RDS(on) - Normalized 2.6 2.2 1. 1. I D = A I D = A 1 2 3 5 6 7 9 - Volts 5V V 1..6.2-5 -25 25 5 75 5 15 - Degrees Centigrade.6 Fig. 5. R DS(on) Normalized to I D = A Value vs. Drain Current 1.2 Fig. 6. Normalized Breakdown & Threshold Voltages vs. Junction Temperature.2 = V RDS(on) - Normalized 3. 3. 3. 2.6 2.2 1. 1. 1. = 5ºC = 25ºC BVDSS / VGS(th) - Normalized 1.1 1..9..7 BS (th).6 5 15 25 3 35 5 5 55 I D - Amperes.6-6 - - 6 1 - Degrees Centigrade 15 IXYS CORPORATION, All Rights Reserved
Fig. 7. Maximum Drain Current vs. Case Temperature Fig.. Input Admittance 2 36 32 2 = 5ºC 25ºC - ºC -5-25 25 5 75 5 15 - Degrees Centigrade 3.5..5 5. 5.5 6. 6.5 7. 7.5 - Volts Fig. 9. Transconductance Fig.. Forward Voltage Drop of Intrinsic Diode 5 = - ºC 7 35 6 g f s - Siemens 3 25 15 25ºC 5ºC IS - Amperes 5 3 = 5ºC = 25ºC 5 5 15 25 3 35 I D - Amperes..5.6.7..9 1. 1.1 V SD - Volts Fig. 11. Gate Charge Fig.. Capacitance = 325V f = 1 MHz VGS - Volts 6 2 I D = A I G = ma Capacitance - PicoFarads 1 C iss C oss C rss 2 32 36 Q G - NanoCoulombs.1 1 - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
Fig. 13. Output Capacitance Stored Energy Fig. 1. Forward-Bias Safe Operating Area 1 R DS(on) Limit 25µs 1 µs EOSS - MicroJoules 6 1 1ms.1 = 15ºC ms 2 = 25ºC Single Pulse 3 5 6 - Volts.1 1, - Volts Fig. 15. Maximum Transient Thermal Impedance 1.1 Z(th)JC - K / W.1.1.1.1.1.1.1 1 Pulse Width - Second 15 IXYS CORPORATION, All Rights Reserved IXYS REF: T_N65X2(X-S62) -17-15
TO-263 Outline TO-2 Outline TO-7 Outline D A A2 E B A R Q S D2 D P1 D1 1 2 3 L1 1 = Gate 2 = Drain 3 = Source = Drain A1 C L b b2 b e C E1 1 - Gate 2, - Drain 3 - Source Pins: 1 - Gate 2 - Drain 3 - Source IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.