Preliminary Technical Information TrenchT2 TM Power MOSFET N-Channel Enhancement Mode Avalanche Rated V DSS I D25 R DS(on) TO-263 (IXTA) = V = A 7mΩ Symbol Test Conditions Maximum Ratings V DSS T J = 25 C to 175 C V V DGR T J = 25 C to 175 C, R GS = 1MΩ V M Transient ± V I D25 = 25 C A I LRMS Lead Current Limit, RMS 75 A I DM = 25 C, pulse width limited by T JM A I AR = 25 C A E AS = 25 C mj P D = 25 C 1 W T J -55... +175 C T JM 175 C T stg -55... +175 C T L 1.6mm (.62in.) from case for s C T SOLD Plastic body for seconds 2 C M d Mounting torque (TO-2) 1.13 / Nm/lb.in. Weight TO-263 2.5 g TO-2 3. g G G = Gate S = Source S TO-2 (IXTP) G D S Features (TAB) (TAB) D = Drain TAB = Drain International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance 175 C Operating Temperature High current handling capability ROHS Compliant High performance Trench Technology for extremely low R DS(on) Advantages Symbol Test Conditions Characteristic Values (T J = 25 C unless otherwise specified) Min. Typ. Max. BV DSS = V, I D = 2μA V (th) V DS =, I D = 2μA 2. 4. V I GSS = ± V, V DS = V ± na I DSS V DS = V DSS 2 μa = V T J = 1 C μa R DS(on) = V, I D = 25A, Notes 1, 2 7 mω Easy to mount Space savings High power density Synchronous Applications Synchronous Buck Converters High Current Switching Power Supplies Battery Powered Electric Motors Resonant-mode power supplies Electronics Ballast Application Class D Audio Amplifiers 8 IXYS CORPORATION, All rights reserved DS99972(4/8)
Symbol Test Conditions Characteristic Values (T J = 25 C, unless otherwise specified) Min. Typ. Max. TO-263 (IXTA) Outline g fs V DS = V, I D =.5 I D25, Note 1 27 45 S C iss 26 pf C oss = V, V DS = 25V, f = 1MHz 4 pf C rss 5 pf t d(on) Resistive Switching Times. ns t r = V, V DS = V, I D =.5 I D25 5.2 ns t d(off) R G = 5Ω (External) 15.8 ns t f 6.4 ns Q g(on) 25.5 nc Q gs = V, V DS =.5 V DSS, I D =.5 I D25 8. nc Q gd 5.7 nc R thjc 1. C/W R thch TO-2. C/W Source-Drain Diode Symbol Test Conditions Characteristic Values (T J = 25 C, unless otherwise specified) Min. Typ. Max. I S = V A I SM Repetitive, Pulse width limited by T JM A V SD I F = A, = V, Note 1 1.2 V TO-2 (IXTP) Outline t rr I F = A, = V 34 ns I RM -di/dt = A/μs 1.44 A Q RM V R = V 24.5 nc Notes: 1. Pulse test, t μs; duty cycle, d 2%. 2. On through-hole packages, R DS(on) Kelvin test contact location must be 5mm or less from the package body. Pins: 1 - Gate 2 - Drain 3 - Source 4 - Drain PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,49,961 5,237,481 6,2,665 6,4,65 B1 6,683,344 6,727,585 7,5,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,8,72 5,17,8 5,63,7 5,381,25 6,259,3 B1 6,534,343 6,7,5 B2 6,759,692 7,63,975 B2 4,881,6 5,34,796 5,187,117 5,486,715 6,6,728 B1 6,583,5 6,7,463 6,771,478 B2 7,71,537
Fig. 1. Output Characteristics @ 25ºC = 15V V 9V 8V 3 2 Fig. 2. Extended Output Characteristics @ 25ºC = 15V V 9V 7V 6V 1 8V 7V 5V..1.2.3.4.5.6 6V 5V 1 2 3 4 5 6 7 8 Fig. 3. Output Characteristics @ 1ºC Fig. 4. R DS(on) Normalized to I D = A Value vs. Junction Temperature = 15V V 9V 8V 7V 6V 5V RDS(on) - Normalized 2.2 2. 1.8 1.6 1.4 1.2 1. = V I D = A I D = A.8..1.2.3.4.5.6.7.8.9 1..6 - -25 25 75 5 1 175 T J - Degrees Centigrade RDS(on) - Normalized 2.6 2.4 2.2 2. 1.8 1.6 1.4 1.2 1. Fig. 5. R DS(on) Normalized to I D = A Value vs. Drain Current = V 15V - - - - T J = 175ºC Fig. 6. Drain Current vs. Case Temperature External Lead Current Limit.8.6 1 2 - -25 25 75 5 1 175 - Degrees Centigrade 8 IXYS CORPORATION, All rights reserved
Fig. 7. Input Admittance T J = 1ºC 25ºC - ºC 3. 3.5 4. 4.5 5. 5.5 6. 6.5 7. - Volts g f s - Siemens Fig. 8. Transconductance 65 T J = - ºC 55 25ºC 45 35 1ºC 25 15 5 1 Fig. 9. Forward Voltage Drop of Intrinsic Diode Fig.. Gate Charge 2 2 2 9 8 V DS = V I D = A I G = ma IS - Amperes 1 1 1 VGS - Volts 7 6 5 4 T J = 1ºC 3 2 1.4.5.6.7.8.9 1. 1.1 1.2 1.3 1.4 1.5 V SD - Volts 2 4 6 8 18 22 24 26 Q G - NanoCoulombs, Fig. 11. Capacitance 1, Fig.. Forward-Bias Safe Operating Area R DS(on) Limit Capacitance - PicoFarads 1, f = 1 MHz C iss C oss C rss T J = 175ºC = 25ºC Single Pulse DC 25µs µs 1ms ms ms 5 15 25 35 1 1 IXYS reserves the right to change limits, test conditions, and dimensions.
Fig. 13. Resistive Turn-on Rise Time vs. Junction Temperature Fig.. Resistive Turn-on Rise Time vs. Drain Current 7. 7. 6.5 6. R G = 5Ω = V V DS = V 6.5 6. R G = 5Ω = V V DS = V t r 5.5 5. 4.5 4. 3.5 I D = A I D = A t r 5.5 5. 4.5 4. 3.5 T J = 5ºC 3. 3. 2.5 25 35 45 55 65 75 85 95 5 115 5 T J - Degrees Centigrade 2.5 Fig. 15. Resistive Turn-on Switching Times vs. Gate Resistance Fig.. Resistive Turn-off Switching Times vs. Junction Temperature 7. 23 t r 6.5 6. 5.5 5. 4.5 t r t d(on) - - - - T J = 5ºC, = V V DS = V I D = A, A 15 13 11 t d(on) t f 13 11 9 8 7 6 t f t d(off) - - - - R G = 5Ω, = V V DS = V I D = A I D = A 22 21 19 18 17 15 t d(off) 4. 5 4 I D = A 13 3.5 9 4 6 8 18 R G - Ohms 3 25 35 45 55 65 75 85 95 5 115 5 T J - Degrees Centigrade Fig. 17. Resistive Turn-off Switching Times vs. Drain Current Fig. 18. Resistive Turn-off Switching Times vs. Gate Resistance 28 t f 18 8 6 t f t d(off) - - - - R G = 5Ω, = V V DS = V T J = 5ºC 26 24 22 18 t d(off) t f t f t d(off) - - - - T J = 5ºC, = V V DS = V I D = A I D = A t d(off) 4 2 4 6 8 18 R G - Ohms 8 IXYS CORPORATION, All rights reserved
Fig. 19. Maximum Transient Thermal Impedance. Z (th)jc - ºC / W 1...1.1.1.1.1.1 1 Pulse Width - Seconds IXYS reserves the right to change limits, test conditions, and dimensions. IXYS REF: T_N4T2(V2) 4-23-8