Preliminary Technical Information X3-Class HiPerFET TM Power MOSFET IXFK3N2X3 IXFX3N2X3 V SS I 25 R S(on) = 2V = 3A 4m N-Channel Enhancement Mode Avalanche Rated TO-264 (IXFK) Symbol Test Conditions Maximum Ratings V SS = 25 C to 5 C 2 V V GR = 25 C to 5 C, R GS = M 2 V S Continuous 2 V M Transient 3 V I 25 = 25 C (Chip Capability) 3 A I L(RMS) External Lead Current Limit 6 A I M = 25 C, Pulse Width Limited by M 7 A I A = 25 C 5 A E AS = 25 C 3.5 J dv/dt I S I M, V V SS, 5 C 2 V/ns P = 25 C 25 W -55... +5 C M 5 C T stg -55... +5 C T L Maximum Lead Temperature for Soldering 3 C T SOL.6 mm (.62in.) from Case for s 26 C M d Mounting Torque (TO-264).3/ Nm/lb.in F C Mounting Force (PLUS247) 2..2 /4.5..27 N/lb Weight TO-264 g PLUS247 6 g G S PLUS247 (IXFX) G S Features Tab Tab G = Gate = rain S = Source Tab = rain International Standard Packages Low R S(ON) and Q G Avalanche Rated Low Package Inductance ( = 25 C, Unless Otherwise Specified) Min. Typ. Max. BV SS = V, I = 3mA 2 V Advantages High Power ensity Easy to Mount Space Savings (th) V S =, I = 8mA 2.5 4.5 V I GSS = 2V, V S = V 2 na I SS V S = V SS, = V 25 A = 25 C.5 ma R S(on) = V, I =.5 I 25, Note 4 m Applications Switch-Mode and Resonant-Mode Power Supplies C-C Converters PFC Circuits AC and C Motor rives Robotics and Servo Controls 27 IXYS CORPORATION, All Rights Reserved S844B(9/7)
IXFK3N2X3 IXFX3N2X3 ( = 25 C, Unless Otherwise Specified) Min. Typ. Max g fs V S = V, I = 6A, Note 8 35 S R Gi Gate Input Resistance.8 C iss 23.8 nf C oss = V, V S = 2, f = MHz 4. nf C rss 3.2 pf Effective Output Capacitance C o(er) Energy related V 64 pf GS = V C o(tr) Time related V 564 pf S =.8 V SS t d(on) 44 ns Resistive Switching Times t r 43 ns = V, V S =.5 V SS, I =.5 I 25 t d(off) 84 ns R G = (External) t f 3 ns Q g(on) 375 nc Q gs = V, V S =.5 V SS, I =.5 I 25 7 nc Q gd 94 nc R thjc. C/W R thcs.5 C/W TO-264 Outline R R L b x2 e Terminals: = Gate 2,4 = rain 3 = Source E 2 3 b b2 Q S Q L A c A 4 P Source-rain iode PLUS 247 TM Outline ( = 25 C, Unless Otherwise Specified) Min. Typ. Max I S = V 3 A A A2 R E Q 2 E I SM Repetitive, pulse Width Limited by M 2 A L 2 3 4 V S I F = A, = V, Note.4 V L t rr I 72 ns F = 5A, -di/dt = A/μs Q RM. μc V I R = V RM 2.8 A A b e C 3 PLCS b2 2 PLCS 2 PLCS b4 Terminals: - Gate 2,4 - rain 3 - Source Note. Pulse test, t 3 s, duty cycle, d 2%. PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and imensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,93,844 5,49,96 5,237,48 6,62,665 6,44,65B 6,683,344 6,727,585 7,5,734B2 7,57,338B2 by one or more of the following U.S. patents: 4,86,72 5,7,58 5,63,37 5,38,25 6,259,23B 6,534,343 6,7,45B2 6,759,692 7,63,975B2 4,88,6 5,34,796 5,87,7 5,486,75 6,36,728B 6,583,55 6,7,463 6,77,478B2 7,7,537
IXFK3N2X3 IXFX3N2X3 3 25 2 5 Fig.. Output Characteristics @ = 25 o C = V 9V 9 8 7 6 5 4 3 Fig. 2. Extended Output Characteristics @ = 25 o C = V 9V 5.2.4.6.8.2.4 2 2 4 6 8 2 4 6 8 2 22 3 25 Fig. 3. Output Characteristics @ = 25 o C = V 9V 2.4 2.2 2. Fig. 4. R S(on) Normalized to I = 5A Value vs. Junction Temperature = V 2 5 RS(on) - Normalized.8.6.4.2. I = 3A I = 5A 5.4.8.2.6 2 2.4.8.6.4-5 -25 25 5 75 25 5 - egrees Centigrade 3.5 Fig. 5. R S(on) Normalized to I = 5A Value vs. rain Current.3 Fig. 6. Normalized Breakdown & Threshold Voltages vs. Junction Temperature 3. = V.2 RS(on) - Normalized 2.5 2..5 = 25 o C = 25 o C BVSS / VGS(th) - Normalized...9.8.7 BV SS (th)..6.5 2 3 4 5 6 7 8 9 I - Amperes.5-6 -4-2 2 4 6 8 2 4 6 - egrees Centigrade 27 IXYS CORPORATION, All Rights Reserved
IXFK3N2X3 IXFX3N2X3 Fig. 7. Maximum rain Current vs. Case Temperature Fig. 8. Input Admittance 8 4 6 4 External Lead Current Limit 35 3 2 8 6 4 25 2 5 = 25 o C 25 o C - 4 o C 2 5-5 -25 25 5 75 25 5 - egrees Centigrade 3. 3.5 4. 4.5 5. 5.5 6. 6.5 7. - Volts Fig. 9. Transconductance Fig.. Forward Voltage rop of Intrinsic iode 4 8 = - 4 o C 35 7 3 6 g f s - Siemens 25 2 5 25 o C 25 o C IS - Amperes 5 4 3 2 = 25 o C 5 = 25 o C 5 5 2 25 3 35 4 I - Amperes.2.4.6.8..2.4.6.8 2. 2.2 V S - Volts Fig.. Gate Charge Fig. 2. Capacitance, VGS - Volts 9 8 7 6 5 4 3 2 V S = V I = 5A I G = ma Capacitance - PicoFarads,, C iss Coss Crss 5 5 2 25 3 35 4 Q G - NanoCoulombs f = MHz, IXYS Reserves the Right to Change Limits, Test Conditions, and imensions.
IXFK3N2X3 IXFX3N2X3 EOSS - MicroJoules 3 25 2 5 5 Fig. 3. Output Capacitance Stored Energy 5 5 2 = 25 o C Fig. 5. Maximum Transient Thermal Single Impedance Pulse. Fig. 4. Forward-Bias Safe Operating Area,.2 Fig. 5. Maximum Transient Thermal Impedance aaaaa. Z(th)JC - K / W R S(on) Limit External Lead Current Limit = 5 o C C 25μs μs ms ms ms....... Pulse Width - Seconds 27 IXYS CORPORATION, All Rights Reserved IXYS REF: F_3N2X3 (29-S22) 6-22-7