SPNN6C Cool MOS Power Transistor V DS @ T jmax 65 V Feature New revolutionary high voltage technology Ultra low gate charge Extreme dv/dt rated Ultra low effective capacitances R DS(on). Ω I D.7 A SOT- VPS56 Type Package Ordering Code SPNN6C SOT- Q67S55 Marking N6C Maximum Ratings Parameter Symbol Value Unit Continuous drain current T A = 5 C T A = 7 C Pulsed drain current, t p limited by T jmax T A = 5 C I D I D puls A.7. Avalanche current, repetitive t AR limited by T jmax I AR. Gate source voltage static V GS ± V Gate source voltage AC (f >Hz) V GS ± Power dissipation, T A = 5 C P tot.8 W Operating and storage temperature T j, T stg -55... +5 C Rev.. Page 5--
SPNN6C Maximum Ratings Parameter Symbol Value Unit Drain Source voltage slope dv/dt 5 V/ns V DS = 8 V, I D =. A, T j = 5 C Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Thermal resistance, junction - soldering point R thjs - 5 - K/W SMD version, device on PCB: @ min. footprint @ 6 cm cooling area ) R thja - - - - 7 Electrical Characteristics, at Tj=5 C unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. Drain-source breakdown voltage V (BR)DSS V GS =V, I D =.5mA 6 - - V Drain-Source avalanche V (BR)DS V GS =V, I D =.A - 7 - breakdown voltage Gate threshold voltage V GS(th) I D =5µΑ, V GS =V DS..9 Zero gate voltage drain current I DSS V DS =6V, V GS =V, µa T j =5 C, T j =5 C -.5 - - 7 Gate-source leakage current I GSS V GS =V, V DS =V - - na Drain-source on-state resistance R DS(on) V GS =V, I D =A, Ω T j =5 C T j =5 C -.6. -.8 - Gate input resistance R G f=mhz, open Drain - - Rev.. Page 5--
SPNN6C Electrical Characteristics, at T j = 5 C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. Transconductance g fs V DS *I D *R DS(on)max, -. - S I D =.A Input capacitance C iss V GS =V, V DS =5V, - - pf Output capacitance C oss f=mhz - 5 - Reverse transfer capacitance C rss - 5 - Effective output capacitance, ) energy related Effective output capacitance, ) time related C o(er) V GS =V, V DS =V to 8V - - pf C o(tr) - 6 - Turn-on delay time t d(on) V DD =5V, V GS =/V, - 7 - ns Rise time t r I D =.7A, R G =Ω - - Turn-off delay time t d(off) - 6 Fall time t f - Gate Charge Characteristics Gate to source charge Q gs V DD =V, I D =.7A - - nc Gate to drain charge Q gd - 6 - Gate charge total Q g V DD =V, I D =.7A, - 7 V GS = to V Gate plateau voltage V (plateau) V DD =V, I D =.7A - 5.5 - V Device on mm*mm*.5mm epoxy PCB FR with 6cm² (one layer, 7 µm thick) copper area for drain connection. PCB is vertical without blown air. Co(er) is a fixed capacitance that gives the same stored energy as C oss while V DS is rising from to 8% V DSS. Co(tr) is a fixed capacitance that gives the same charging time as C oss while V DS is rising from to 8% V DSS. Rev.. Page 5--
SPNN6C Electrical Characteristics, at T j = 5 C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. Inverse diode continuous I S T A =5 C - -.7 A forward current Inverse diode direct current, I SM - - pulsed Inverse diode forward voltage V SD V GS =V, I F =I S -. V Reverse recovery time t rr V R =V, I F =I S, - 5 ns Reverse recovery charge Q rr di F /dt=a/µs -.8 - µc Peak reverse recovery current I rrm - 5 - A Peak rate of fall of reverse di rr /dt - - 5 A/µs recovery current Rev.. Page 5--
SPNN6C Power dissipation P tot = f (T A ).9 SPNN6C W Safe operating area I D = f ( V DS ) parameter : D =, T A =5 C A.6. Ptot. ID.8.6.. - - tp =. ms tp =. ms tp =. ms tp = ms tp = ms DC 6 8 C 6 T A Transient thermal impedance Z thjc = f (t p ) parameter: D = t p /T K/W - V V DS Typ. output characteristic I D = f (V DS ); T j =5 C parameter: t p = µs, V GS A ZthJC - - D =.5 D =. D =. D =.5 D =. D =. single pulse ID 9 8 7 6 5 V 7V 6.5V 6V 5.5V 5V.5V V - -7-6 -5 - - - - s t p Rev.. Page 5 8 6 V V DS 5--
SPNN6C 5 Typ. output characteristic I D = f (V DS ); T j =5 C parameter: t p = µs, V GS 6 6 Typ. drain-source on resistance R DS(on) =f(i D ) parameter: T j =5 C, V GS ID A V 7V 6V 5.5V 5V.5V V.5V R DS(on) Ω 8 7 6 V.5V 5V 5.5V 6V 6.5V 8V V 5 8 6 V V DS 7 Drain-source on-state resistance R DS(on) = f (T j ) parameter : I D =. A, V GS = V Ω 8 SPNN6C 5 6 A 8 I D 8 Typ. transfer characteristics I D = f ( V GS ); V DS x I D x R DS(on)max parameter: t p = µs A 5 C 9 RDS(on) 6 5 ID 8 7 5 C 6 5 98% typ -6-6 C 8 T j Rev.. Page 6 6 8 6 V V GS 5--
SPNN6C 9 Typ. gate charge V GS = f (Q Gate) parameter: I D =.7 A pulsed 6 SPNN6C V Forward characteristics of body diode I F = f (V SD ) parameter: T j, tp = µs A SPNN6C VGS. V DS max.8 V DS max IF 8 6 - T j = 5 C typ T j = 5 C typ T j = 5 C (98%) T j = 5 C (98%) 6 8 6 nc Q Gate Typ. drain current slope di/dt = f(r G ), inductive load, T j = 5 C par.: V DS =8V, V GS =/+V, I D =.7A 5 A/µs -..8..6. V V SD Typ. switching time t = f (R G ), inductive load, T j =5 C par.: V DS =8V, V GS =/+V, I D =.7 A 5 ns 5 5 di/dt 9 t 75 6 5 td(off) tf td(on) tr 5 di/dt(on) 5 5 di/dt(off) 5 8 6 Ω R G Rev.. Page 7 6 8 6 Ω R G 5--
SPNN6C Typ. switching time t = f (I D ), inductive load, T j =5 C par.: V DS =8V, V GS =/+V, R G =Ω ns Typ. drain source voltage slope dv/dt = f(r G ), inductive load, T j = 5 C par.: V DS =8V, V GS =/+V, I D =.7A 9 V/ns 8 7 t 7 6 5 td(off) tf td(on) tr dv/dt 6 5 dv/dt(off) dv/dt(on).5.5.5 A.5 I D 5 Typ. switching losses E = f (I D ), inductive load, T j =5 C par.: V DS =8V, V GS =/+V, R G =Ω 6 8 6 Ω R G 6 Typ. switching losses E = f(r G ), inductive load, T j =5 C par.: V DS =8V, V GS =/+V, I D =.7A. mws *) E on includes SDP6S6 diode commutation losses..6 mws *) E on includes SDP6S6 diode commutation losses..8.7.8. Eoff E.6 Eon* E.6.5. Eon*. Eoff...8....6.5.5.5 A.5 I D Rev.. Page 8 8 6 Ω R G 5--
SPNN6C 7 Drain-source breakdown voltage V (BR)DSS = f (T j ) 7 SPNN6C V 8 Typ. capacitances C = f (V DS ) parameter: V GS =V, f= MHz pf V(BR)DSS 68 66 C Ciss 6 6 Coss 6 58 56 Crss 5-6 - 6 C 8 T j V 6 V DS 9 Typ. C oss stored energy E oss =f(v DS ).5 µj Eoss.5.5 V 6 V DS Rev.. Page 9 5--
SPNN6C Definition of diodes switching characteristics Rev.. Page 5--
SPNN6C SOT- Rev.. Page 5--
SPNN6C Published by Infineon Technologies AG, 876 Munich, Germany Infineon Technologies AG All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev.. Page 5--