Type Marking Pin Configuration Package SMBT3904/MMBT3904 SOT23 SMBT3904S 2=E 1=B 3=C 1=E1 2=B1 3=C2

Similar documents
SMBT MMBT3906 SMBT3906S/U. Type Marking Pin Configuration Package SMBT3906S SMBT3906U

Type Marking Pin Configuration Package SMBT2222A/MMBT2222A s1p 1 = B 2 = E 3 = C SOT23

Type Marking Pin Configuration Package SMBT2907A/MMBT2907A s2f 1 = B 2 = E 3 = C SOT23

Type Marking Pin Configuration Package SMBTA06/MMBTA06 s1g 1=B 2=E 3=C SOT23

Type Marking Pin Configuration Package BCM856S 3Ms 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363

Type Marking Pin Configuration Package BCW66KF BCW66KG BCW66KH 1=B 1=B 1=B

2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E

Type Marking Pin Configuration Package BFN27 FLs 1=B 2=E 3=C SOT23

Type Marking Pin Configuration Package BCW66F BCW66KF* BCW66G BCW66KG* BCW66H BCW66KH* 1=B 1=B 1=B 1=B 1=B 1=B

BC BC Pb-containing package may be available upon special request

N channel vertical power FET in Smart SIPMOS technology. Fully protected by embedded protection functions. Overvoltage- Protection

IGBT Highspeed5IGBTinTRENCHSTOP TM 5technology. IGZ100N65H5 650VIGBThighspeedseriesfifthgeneration. Datasheet. IndustrialPowerControl

N channel vertical power FET in Smart SIPMOS technology. Fully protected by embedded protection functions. Overvoltage- Protection

Type Marking Pin Configuration Package BCX42 DKs 1 = B 2 = E 3 = C SOT23. Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage V CEO

Type Marking Pin Configuration Package BFN24 BFN26 1=B 1=B

Type Marking Pin Configuration Package BCM846S 1Ms 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363

Type Marking Pin Configuration Package BC BC807-16W BC BC807-25W BC BC807-40W BC BC808-25W BC808-40

BCW61..., BCX71... PNP Silicon AF Transistors. For AF input stages and driver applications High current gain Low collector-emitter saturation voltage

Part Ordering code Marking Remarks 1N4148W-V 1N4148W-V-GS18 or 1N4148W-V-GS08 A2 Tape and Reel

Pb-free (RoHS compliant) package Qualified according AEC Q101 C1 (2) Type Marking Pin Configuration Package BCV62A BCV62B BCV62C 2 = C1 2 = C1 2 = C1

C1 B2 E2 TR2 TR1 EHA Type Marking Pin Configuration Package BC817UPN 1Bs 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SC74

5-V Low Drop Fixed Voltage Regulator TLE 4268

BCP51...-BCP53... Type Marking Pin Configuration Package BCP51 BCP51-16 BCP52-16 BCP53-10 BCP SOT223 SOT223 SOT223 SOT223 SOT223

BAV BAV Total power dissipation T S 35 C. t = 1 s. t = 1 µs. P tot 250 mw

BDP947_BDP949_BDP953. Silicon NPN Transistors. For AF driver and output stages High collector current High current gain

BAT64-04W. ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type Package Configuration L S (nh) Marking

Type Marking Pin Configuration Package BFR93A R2s 1=B 2=E 3=C SOT23

Type Marking Pin Configuration Package BSP60 BSP61 BSP62 2=C 2=C 2=C 3=E 3=E 3=E

BCW60, BCX70. NPN Silicon AF Transistors. For AF input stages and driver applications High current gain Low collector-emitter saturation voltage

Silicon Diffused Power Transistor

Silicon Diffused Power Transistor

Type Marking Pin Configuration Package BFN38 BFN38 1=B 2=C 3=E 4=C - - SOT223

Silicon Diffused Power Transistor

Type Marking Pin Configuration Package BCX68-10 BCX68-16 BCX =B 1=B 1=B

Type Marking Pin Configuration Package BCP68-25 * 1=B 2=C 3=E 4=C - - SOT223

BC BC Pb-containing package may be available upon special request

Silicon Diffused Power Transistor

single single single 150 C Operating temperature range T op Storage temperature T stg

3~ Rectifier Bridge, half-controlled (high-side) + Brake Unit + NTC /20 NTC. Features / Advantages: Applications: Package: E2-Pack

ESD (Electrostatic discharge) sensitive device, observe handling precaution!

Type Package Configuration Marking BAS28 BAS28W

C1 (2) C2 (1) E1 (3) E2 (4) Type Marking Pin Configuration Package BCV61B BCV61C 2 = C1 2 = C1 1 = C2 1 = C2

Silicon Diffused Power Transistor

ResonantSoft-SwitchingSeries ReverseconductingIGBTwithmonolithicbodyDiodeforsoft-switching

Silicon Diffused Power Transistor

Type Marking Pin Configuration Package BFR93AW R2s 1=B 2=E 3=C SOT323

Standard Rectifier Module

BAR64... BAR64-05 BAR64-05W BAR64-04 BAR64-04W BAR64-02LRH BAR64-02V BAR64-03W BAR64-06 BAR64-06W BAR64-07

BAW56 BAW56S BAW56T BAW56U BAW56W

Data Sheet, Rev. 1.1, September 2011 HITFET - BTS3405G. Smart Low-Side Power Switch. Automotive Power

single, leadless single Maximum Ratings at T A = 25 C, unless otherwise specified Parameter Symbol Value Unit Diode reverse voltage V R

Silicon Diffused Power Transistor

Silicon Diffused Power Transistor

D44VH10 (NPN), D45VH10 (PNP) Complementary Silicon Power Transistors 15 A COMPLEMENTARY SILICON POWER TRANSISTORS 80 V, 83 W

BFS483. Low Noise Silicon Bipolar RF Transistor

Type Marking Pin Configuration Package BCX42 BSS63 1 = B 1 = B 2 = E 2 = E

Silicon Diffused Power Transistor

ESD (Electrostatic discharge) sensitive device, observe handling precaution!

Silicon Diffused Power Transistor

High Voltage Standard Rectifier Module

Type Marking Pin Configuration Package BFR183 RHs 1=B 2=E 3=C SOT23

ESD (Electrostatic discharge) sensitive device, observe handling precaution!

Type Marking Pin Configuration Package BFR93AW R2s 1=B 2=E 3=C SOT323

Type Marking Pin Configuration Package BFR182W RGs 1=B 2=E 3=C SOT323

single common cathode common cathode

Smart Lowside Power Switch HITFET BSP 75N

ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type Marking Pin Configuration Package BFR181 RFs 1=B 2=E 3=C SOT23

MJE18006G SWITCHMODE. NPN Bipolar Power Transistor For Switching Power Supply Applications POWER TRANSISTOR 6.0 AMPERES 1000 VOLTS 100 WATTS

single single single yellow S HH H Maximum Ratings at T A = 25 C, unless otherwise specified Parameter Symbol Value Unit Diode reverse voltage V R

Type Marking Pin Configuration Package BFQ19S FG 1 = B 2 = C 3 = E SOT89

ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type Package Pin Configuration Marking BF998 BF998R 2=D 2=S 3=G2 3=G1

MJE5740G, MJE5742G. NPN Silicon Power Darlington Transistors POWER DARLINGTON TRANSISTORS 8 AMPERES VOLTS 80 WATTS

I FSM P tot 500 mw. 150 C Storage temperature T stg

single, leadless single single

BFP193. NPN Silicon RF Transistor* For low noise, high-gain amplifiers up to 2 GHz For linear broadband amplifiers f T = 8 GHz, F = 1 db at 900 MHz

PRODUKTINFORMATION. Datum ELFA artikelnr. Antal sidor: BU2525AF Effekt Transistor

ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type Marking Pin Configuration Package BFR183W RHs 1=B 2=E 3=C SOT323

NDS356P P-Channel Logic Level Enhancement Mode Field Effect Transistor

Smart Power High-Side-Switch

NDS332P P-Channel Logic Level Enhancement Mode Field Effect Transistor

MJE5740, MJE5742. NPN Silicon Power Darlington Transistors POWER DARLINGTON TRANSISTORS 8 AMPERES VOLTS 80 WATTS

single single single yellow S HH H Maximum Ratings at T A = 25 C, unless otherwise specified Parameter Symbol Value Unit Diode reverse voltage V R

Smart Two Channel Highside Power Switch

Features / Advantages: Applications: Package: Y4

Features / Advantages: Applications: Package: Y4

Type Marking Pin Configuration Package BFR92P GFs 1=B 2=E 3=C SOT23

BFP196W. NPN Silicon RF Transistor*

onlinecomponents.com OPTOLOGIC OPTICAL INTERRUPTER SWITCH QVE00112 PACKAGE DIMENSIONS FEATURES 6/10/04

NDS355AN N-Channel Logic Level Enhancement Mode Field Effect Transistor

Standard Rectifier Module

BFP193. NPN Silicon RF Transistor*

Features / Advantages: Applications: Package: Y4

SFH636. Pb Pb-free. Optocoupler, Phototransistor Output, 1 Mbd, 10 kv/ms CMR, Split CollectorTransistor Output VISHAY. Vishay Semiconductors

BFP196W. NPN Silicon RF Transistor*

NDH834P P-Channel Enhancement Mode Field Effect Transistor

6/7 1/2 4/5. Features / Advantages: Applications: Package: V1-A-Pack

XPT IGBT Module MIXA450PF1200TSF. Phase leg + free wheeling Diodes + NTC MIXA450PF1200TSF. Part number

NDP4050L / NDB4050L N-Channel Logic Level Enhancement Mode Field Effect Transistor

NDT014 N-Channel Enhancement Mode Field Effect Transistor

Transcription:

SMBT94...MMBT94 NPN Silicon Swiching Transisors High D curren gain:. ma o ma Low collecoremier sauraion volage For SMBT94S: Two (galvanic) inernal isolaed ransisors wih good maching in one package omplemenary ypes: SMBT96... MMBT96 SMBT94S: For orienaion in reel see package informaion below Pbfree (RoHS complian) package Qualified according AE Q Type Marking Pin onfiguraion Package SMBT94/MMBT94 sa =B =E = SOT SMBT94S sa =E =B = 4=E =B 6= SOT6 Maximum Raings Parameer Symbol Value Uni ollecoremier volage V EO 4 V ollecorbase volage V BO 6 Emierbase volage V EBO 6 ollecor curren I ma Toal power dissipaion P o mv T S 7, SOT, SMBT94 T S, SOT6, SMBT94S Juncion emperaure T j Sorage emperaure T sg 6... Thermal Resisance Parameer Symbol Value Uni Juncion soldering poin ) R hjs K/W SMBT94/MMBT94 SMBT94S 4 4 For calculaion of R hja please refer o Applicaion Noe AN77 (Thermal Resisance alculaion) 8 This Daa shee can be found on hps://www.jorin.com

SMBT94...MMBT94 Elecrical haracerisics a T A =, unless oherwise specified Parameer Symbol Values Uni min. yp. max. D haracerisics ollecoremier breakdown volage I = ma, I B = ollecorbase breakdown volage I = µa, I E = Emierbase breakdown volage I E = µa, I = ollecorbase cuoff curren V B = V, I E = D curren gain ) I = µa, V E = V I = ma, V E = V I = ma, V E = V I = ma, V E = V I = ma, V E = V V (BR)EO 4 V V (BR)BO 6 V (BR)EBO 6 I BO na h FE 4 7 6 ollecoremier sauraion volage ) V Esa V I = ma, I B = ma. I = ma, I B = ma. Base emier sauraion volage ) V BEsa I = ma, I B = ma.6.8 I = ma, I B = ma.9 Pulse es: < µs; D < % 8

SMBT94...MMBT94 Elecrical haracerisics a T A =, unless oherwise specified Parameer Symbol Values Uni min. yp. max. A haracerisics Transiion frequency f T MHz I = ma, V E = V, f = MHz ollecorbase capaciance cb. pf V B = V, f = MHz Emierbase capaciance eb 8 V EB =. V, f = MHz Delay ime d ns V = V, I = ma, I B = ma, V BE(off) =. V Rise ime r V = V, I = ma, I B = ma, V BE(off) =. V Sorage ime sg V = V, I = ma, I B = I B = ma Fall ime f V = V, I = ma, I B = I B = ma Noise figure I = µa, V E = V, f = khz, f = Hz, R S = kω F db 8

SMBT94...MMBT94 Tes circuis Delay and rise ime +. V ns D = % +.9 V 7 Ω <. ns. V kω <4. pf EHN6 Sorage and fall ime +. V < < µs D = % +.9 V 7 Ω kω 9. V N96 <4. pf <. ns EHN6 4 8

SMBT94...MMBT94 D curren gain h FE = ƒ(i ) V E = V, normalized Sauraion volage I = ƒ(v BEsa ; V Esa ) h FE = EHP76 Ι ma hfe V E V BE 4 ma I ollecorbase capaciance cb = ƒ(v B ) Emierbase capaciance eb = ƒ(v EB )..4.6.8. V. V BE sa Toal power dissipaion P o = ƒ(t S ) SMBT94/MMBT94,V E sa pf 9 6 mw B(EB) 7 6 4 EB Po 7 4 8 B 9 6 4 8 6 A V B (V EB 4 6 7 9 T S 8

SMBT94...MMBT94 Toal power dissipaion P o = ƒ(t S ) SMBT94S Permissible Pulse Load R hjs = ƒ( ) SMBT94/ MMBT94 mw K/W Po 7 RhJS 7 D=....... 4 6 7 9 T S 6 4 s Permissible Pulse Load P omax /P od = ƒ( ) SMBT94/MMBT94 P P o max o D = D T T EHP9 Permissible Puls Load R hjs = ƒ ( ) SMBT94S K/W D =....... RhJS....... D = 6 4 s 6 4 s 6 8

SMBT94...MMBT94 Permissible Pulse Load Delay ime d = ƒ(i ) P omax /P od = ƒ( ) Rise ime r = ƒ(i ) SMBT94S Pomax/PoD D =....... r ns, d r d h FE = EHP76 V = V 4 V V V BE V = V 6 4 s Sorage ime sg = ƒ(i ) ma Ι Fall ime f = ƒ(i ) s ns h FE = EHP76 f ns EHP76 V = 4 V h FE = h FE = h FE = ma Ι ma Ι 7 8

SMBT94...MMBT94 Rise ime r = ƒ(i ) r ns EHP764 V h FE = 4 V = ma Ι 8 8

Package SOT SMBT94...MMBT94 Package Ouline +. ).4..9 ±..9 B.9.4 ±.. MIN. MAX. ±.. MAX....8 MAX..8.... ±. A. M B. M A Foo Prin ) Lead widh can be.6 max. in dambar area.8.8..9..9 Marking Layou (Example) EH s Manufacurer, June Dae code (YM) Pin BW66 Type code Sandard Packing Reel ø8 mm =. Pieces/Reel Reel ø mm =. Pieces/Reel 4.9. 8..6 Pin.. 9 8

Package SOT6 SMBT94...MMBT94 Package Ouline ±. +... 6 4 6x. M. MAX...9 ±. A Pin marking.6.6.±.. MIN. +... Foo Prin..9.6.7.6.6 Marking Layou (Example) Small variaions in posiioning of Dae code, Type code and Manufacure are possible. Manufacurer, June Dae code (Year/Monh) Pin marking Laser marking BR8S Type code Sandard Packing Reel ø8 mm =. Pieces/Reel Reel ø mm =. Pieces/Reel For symmeric ypes no defined Pin orienaion in reel. 4.. 8. ±.. M A Pin marking.. 8

SMBT94...MMBT94 Ediion 96 Published by Infineon Technologies AG 876 Munich, Germany 9 Infineon Technologies AG All Righs Reserved. Legal Disclaimer The informaion given in his documen shall in no even be regarded as a guaranee of condiions or characerisics. Wih respec o any examples or hins given herein, any ypical values saed herein and/or any informaion regarding he applicaion of he device, Infineon Technologies hereby disclaims any and all warranies and liabiliies of any kind, including wihou limiaion, warranies of noninfringemen of inellecual propery righs of any hird pary. Informaion For furher informaion on echnology, delivery erms and condiions and prices, please conac he neares Infineon Technologies Office (<www.infineon.com>). Warnings Due o echnical requiremens, componens may conain dangerous subsances. For informaion on he ypes in quesion, please conac he neares Infineon Technologies Office. Infineon Technologies componens may be used in lifesuppor devices or sysems only wih he express wrien approval of Infineon Technologies, if a failure of such componens can reasonably be expeced o cause he failure of ha lifesuppor device or sysem or o affec he safey or effeciveness of ha device or sysem. Life suppor devices or sysems are inended o be implaned in he human body or o suppor and/or mainain and susain and/or proec human life. If hey fail, i is reasonable o assume ha he healh of he user or oher persons may be endangered. 8