General Purpose Transistors

Similar documents
General Purpose Transistors PNP Silicon

General Purpose Transistors

General Purpose Transistors

MMBT3904-G (NPN) General Purpose Transistor. RoHS Device. Features. Maximum Ratings (at TA=25 C unless otherwise noted) Thermal Characteristics SOT-23

BC556B, BC557A, B, C, BC558B. Amplifier Transistors. PNP Silicon BC556B PNP AUDIO 100MA 65V 500MW TO92.

BC856ALT1 Series. General Purpose Transistors. PNP Silicon. Pb Free Packages are Available. Features.

E 1 C 2 C 1 E 2 B 2 B 1 B 2 E 2

Lead-free Green C 2 B 1 E 1 E 2 B 2 C T A = 25 C unless otherwise specified

Type Marking Pin Configuration Package BCM856S 3Ms 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363

BC556B, BC557A, B, C, BC558B, C. Amplifier Transistors. PNP Silicon. Pb Free Packages are Available* Features MAXIMUM RATINGS

Type Marking Pin Configuration Package SMBT2222A/MMBT2222A s1p 1 = B 2 = E 3 = C SOT23

BC847BPDXV6T5G. SBC847BPDXV6 NPN/PNP Dual General Purpose Transistor

General Purpose Transistors

Type Marking Pin Configuration Package SMBTA06/MMBTA06 s1g 1=B 2=E 3=C SOT23

BC846BDW1T1G, SBC846BDW1T1G, BC847BDW1T1G, SBC847BDW1T1G Series, NSVBC847BDW1T2G, BC848CDW1T1G

Type Marking Pin Configuration Package BCW66KF BCW66KG BCW66KH 1=B 1=B 1=B

BC846ALT1 Series. General Purpose Transistors. NPN Silicon

Type Marking Pin Configuration Package BCW66F BCW66KF* BCW66G BCW66KG* BCW66H BCW66KH* 1=B 1=B 1=B 1=B 1=B 1=B

Type Marking Pin Configuration Package SMBT2907A/MMBT2907A s2f 1 = B 2 = E 3 = C SOT23

SMBT MMBT3906 SMBT3906S/U. Type Marking Pin Configuration Package SMBT3906S SMBT3906U

Characteristic Symbol Value Unit Output Current I out 150 ma

BC BC Pb-containing package may be available upon special request

Type Marking Pin Configuration Package BFN27 FLs 1=B 2=E 3=C SOT23

2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E

BC487, BC487B. High Current Transistors. NPN Silicon. Pb Free Packages are Available* Features. MAXIMUM RATINGS MARKING DIAGRAM

BC846, BC847, BC848 Series. General Purpose Transistors. NPN Silicon

PN4258. Symbol Parameter Value Units

SOT-23 Mark: 1A. = 25 C unless otherwise noted T A. Symbol Parameter Value Units

BC337, BC337-25, BC Amplifier Transistors. NPN Silicon. These are Pb Free Devices. Features MAXIMUM RATINGS

MMBT3906L, SMMBT3906L. General Purpose Transistor. PNP Silicon

FFB3904 / FMB3904 / MMPQ3904 NPN Multi-Chip General Purpose Amplifier

PNP SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/357

BC817-AU SERIES NPN GENERAL PURPOSE TRANSISTORS. VOLTAGE 45 Volts POWER 330 mw FEATURES MECHANICAL DATA MAXIMUM RATINGS THERMAL CHARACTERISTICS

2N5401. PNP Silicon. These are Pb Free Devices* Features. MAXIMUM RATINGS THERMAL CHARACTERISTICS MARKING DIAGRAM

BC546B, BC547A, B, C, BC548B, C. Amplifier Transistors. NPN Silicon. Pb Free Packages are Available* Features. MAXIMUM RATINGS

2N3904 SMALL SIGNAL NPN TRANSISTOR

BC846BDW1, BC847BDW1, BC848CDW1. Dual General Purpose Transistors. NPN Duals

MMBT5550L, MMBT5551L, SMMBT5551L. High Voltage Transistors. NPN Silicon

2N5550, 2N5551. NPN Silicon. Pb Free Packages are Available* Features. MAXIMUM RATINGS THERMAL CHARACTERISTICS MARKING DIAGRAM

2N4921, 2N4922, 2N4923. Medium Power Plastic NPN Silicon Transistors 1.0 AMPERE GENERAL PURPOSE POWER TRANSISTORS VOLTS, 30 WATTS

2N4123, 2N4124. General Purpose Transistors. NPN Silicon. Pb Free Packages are Available* Features MAXIMUM RATINGS

P2N2907ARL1G. Amplifier Transistor. PNP Silicon. These are Pb -Free Devices* Features. MAXIMUM RATINGS THERMAL CHARACTERISTICS

BC807-16W/-25W/-40W Taiwan Semiconductor

2N4918-2N4920 Series. Medium-Power Plastic PNP Silicon Transistors 3.0 A, V, 30 W GENERAL PURPOSE POWER TRANSISTORS

MMBT2369A NPN Switching Transistor

COMPLEMENTARY NPN/PNP TRANSISTOR

2SC3457. isc Silicon NPN Power Transistor. isc Product Specification. INCHANGE Semiconductor. isc Website:

200mW, PNP Small Signal Transistor

PN2222, PN2222A. General Purpose Transistors. NPN Silicon. Pb Free Packages are Available* Features MAXIMUM RATINGS MARKING DIAGRAM

BCW61..., BCX71... PNP Silicon AF Transistors. For AF input stages and driver applications High current gain Low collector-emitter saturation voltage

2N5655G, 2N5657G. Plastic NPN Silicon High-Voltage Power Transistors 0.5 AMPERE POWER TRANSISTORS NPN SILICON VOLTS, 20 WATTS

2N4401 TO - 92 BIPOLAR TRANSISTORS TRANSISTOR(NPN) (TO-92) FEATURES

350mW, PNP Small Signal Transistor

BUL45D2G. High Speed, High Gain Bipolar NPN Power Transistor. with Integrated Collector Emitter Diode and Built in Efficient Antisaturation Network

BC846AW - BC850CW Taiwan Semiconductor. NPN Transistor. Small Signal Product SOT-323 FEATURES MECHANICAL DATA

DATA SHEET. BC556; BC557 PNP general purpose transistors DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 1997 Mar 27.

Type Marking Pin Configuration Package BCM846S 1Ms 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363

C1 (2) C2 (1) E1 (3) E2 (4) Type Marking Pin Configuration Package BCV61B BCV61C 2 = C1 2 = C1 1 = C2 1 = C2

Pb-free (RoHS compliant) package Qualified according AEC Q101 C1 (2) Type Marking Pin Configuration Package BCV62A BCV62B BCV62C 2 = C1 2 = C1 2 = C1

BUL45D2G. High Speed, High Gain Bipolar NPN Power Transistor. with Integrated Collector Emitter Diode and Built in Efficient Antisaturation Network

BCW60, BCX70. NPN Silicon AF Transistors. For AF input stages and driver applications High current gain Low collector-emitter saturation voltage

2N4401. General Purpose Transistors. NPN Silicon. Pb Free Packages are Available* Features. MAXIMUM RATINGS MARKING DIAGRAM

Type Marking Pin Configuration Package BCX42 BSS63 1 = B 1 = B 2 = E 2 = E

absolute maximum ratings at 25 C case temperature (unless otherwise noted)

B 1 E 1. C 1 Internal Schematic (TOP VIEW) E 1, B 1, C 1 = PNP3906 Section E 2, B 2, C 2 = NPN3904 Section

LOW V CE(SAT) NPN SURFACE MOUNT TRANSISTOR. Top View

PZT2222A. NPN Silicon Planar Epitaxial Transistor SOT 223 PACKAGE NPN SILICON TRANSISTOR SURFACE MOUNT

BD245, BD245A, BD245B, BD245C NPN SILICON POWER TRANSISTORS

2N4403. PNP Silicon. Pb Free Packages are Available* Features MAXIMUM RATINGS THERMAL CHARACTERISTICS MARKING DIAGRAM

0.016 W/ C to +150 C

PN2222A TO - 92 BIPOLAR TRANSISTORS TRANSISTOR(NPN) (TO-92) FEATURES

MUN5314DW1, NSBC114YPDXV6, NSBC114YPDP6

HARDENED PNP SILICON SWITCHING TRANSISTOR

MMBT2222ATB NPN GENERAL PURPOSE SWITCHING TRANSISTOR. VOLTAGE 40 Volt POWER 225 mwatt FEATURES MECHANICAL DATA ABSOLUTE RATINGS

MP6901 MP6901. High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching. Maximum Ratings (Ta = 25 C)

LMBZ52xxBLG Series. 225 mw SOT 23 Surface Mount LESHAN RADIO COMPANY, LTD. 1/6

Type Marking Pin Configuration Package BSP60 BSP61 BSP62 2=C 2=C 2=C 3=E 3=E 3=E

MJW18020G. NPN Silicon Power Transistors High Voltage Planar 30 AMPERES 1000 VOLTS BV CES 450 VOLTS BV CEO, 250 WATTS

Type Marking Pin Configuration Package BC BC807-16W BC BC807-25W BC BC807-40W BC BC808-25W BC808-40

BDP947_BDP949_BDP953. Silicon NPN Transistors. For AF driver and output stages High collector current High current gain

Type Marking Pin Configuration Package BCX42 DKs 1 = B 2 = E 3 = C SOT23. Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage V CEO

RADIATION HARDENED NPN SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/255

List... Package outline... Features Mechanical data... Maximum ratings... Electrical characteristics Rating and characteristic curves...

MJF6388 (NPN) MJF6668 (PNP) Complementary Power Darlingtons. For Isolated Package Applications

BCR191.../SEMB1 BCR191/F/L3 BCR191T/W BCR191S SEMB1. Type Marking Pin Configuration Package BCR191 BCR191F BCR191L3 2=E 2=E 2=E =C 3=C 3=C

2N3903, 2N3904. NPN Silicon. Pb Free Packages are Available* Features. MAXIMUM RATINGS. THERMAL CHARACTERISTICS (Note 1)

Type Marking Pin Configuration Package BFR93A R2s 1=B 2=E 3=C SOT23

IGBT Designer s Manual

VDSS RDS(on) max (m -12V Description Absolute Maximum Ratings Parameter Max. Units Thermal Resistance Symbol Parameter Typ. Max.

2N2904A-2N2905A 2N2906A-2N2907A

MBT3904DW1, MBT3904DW2, SMBT3904DW1, NSVMBT3904DW1. Dual General Purpose Transistors

Type Marking Pin Configuration Package BFR93AW R2s 1=B 2=E 3=C SOT323

Type Marking Pin Configuration Package BFR182W RGs 1=B 2=E 3=C SOT323

SEMICONDUCTOR TECHNICAL DATA KIA6801K DRIVER BI-DIRECTIONAL DC MOTOR DRIVER

Type Marking Pin Configuration Package BCX68-10 BCX68-16 BCX =B 1=B 1=B

Type Marking Pin Configuration Package BFR93AW R2s 1=B 2=E 3=C SOT323

BFS483. Low Noise Silicon Bipolar RF Transistor

Type Marking Pin Configuration Package BFN24 BFN26 1=B 1=B

Type Marking Pin Configuration Package BFR183 RHs 1=B 2=E 3=C SOT23

Transcription:

LESHN RDIO OMPNY, LD. General Purpose ransistors PNP Silicon Moisture Sensitivity Level: 1 ESD Rating Human Body Model: >4 ESD Rating Machine Model: >4 We declare that the material of product compliance with RoHS requirements. S- Prefix for utomotive and Other pplications Requiring Unique Site and ontrol hange Requirements; E-Q11 Qualified and PPP apable. MXIMUM RINGS ( = 25 unless otherwise noted) Rating Symbol alue Unit ollector-emitter oltage LB856 LB857 LB858, LB859 ollector-base oltage LB856 LB857 LB858, LB859 EO 65 45 BO 8 5 EmitterBase oltage EBO 5. ollector urrent ontinuous I 1 mdc HERML HRERISIS haracteristic Symbol Max Unit otal Device Dissipation FR5 Board, (Note 1.) = 25 Derate above 25 hermal Resistance, Junction to mbient otal Device Dissipation lumina Substrate, (Note 2.) = 25 Derate above 25 hermal Resistance, Junction to mbient PD 225 1.8 mw mw/ R J 556 /W PD 2.4 mw mw/ R J 417 /W Junction and Storage emperature J, stg 55 to +15 1. FR5 = x.75 x.62 in 2. lumina =.4 x. x.24 in. 99.5% alumina. LB857L1G Series S-LB857L1G Series 1 1 BSE 2 SO2 OLLEOR 2 EMIER MRKING DIGRM xx 1 2 xx= Device Marking (See able Below) Rev.O 1/7

LESHN RDIO OMPNY, LD. LB857L1G Series, S-LB857L1G Series DEIE MRKING ND ORDERING INFORMION Device Marking Package Shipping (S-)LB856L1G /ape&reel (S-)LB856LG (S-)LB856BL1G B /ape&reel (S-)LB856BLG B (S-)LB857L1G E /ape&reel (S-)LB857L1G E (S-)LB857BL1G F /ape&reel (S-)LB857BLG F (S-)LB857L1G G /ape&reel (S-)LB857L1G G (S-)LB858L1G J /ape&reel (S-)LB858L1G J (S-)LB858BL1G K /ape&reel (S-)LB858BLG K (S-)LB858L1G L /ape&reel (S-)LB858LG L (S-)LB859BL1G 4B /ape&reel (S-)LB859BL1G 4B (S-)LB859L1G 4 /ape&reel (S-)LB859LG 4 Rev.O 2/7

LESHN RDIO OMPNY, LD. LB857L1G Series, S-LB857L1G Series ELERIL HRERISIS ( = 25 unless otherwise noted) haracteristic Symbol Min yp Max Unit OFF HRERISIS ollectoremitter Breakdown oltage (I = 1 m) ollectoremitter Breakdown oltage (I = 1 µ, EB = ) ollectorbase Breakdown oltage (I = 1 ) EmitterBase Breakdown oltage (IE = ) ollector utoff urrent (B = ) ollector utoff urrent (B =, = 15 ) ON HRERISIS D urrent Gain (I = m, E = 5. ) LB856 Series LB857 Series LB858, LB859 Series LB856 Series LB857 Series LB858, LB859 Series LB856 Series LB857 Series LB858, LB859 Series LB856 Series LB857 Series LB858, LB859 Series LB856, LB857, LB858 LB856B, LB857B, LB858B, LB859B LB857, LB858, LB859 (BR)EO 65 45 (BR)ES 8 5 (BR)BO 8 5 (BR)EBO 5. 5. 5. IBO hfe 125 22 42 18 29 52 15 4. 25 475 8 n µ ollectoremitter Saturation oltage (I = 1 m, IB =.5 m) (I = 1 m, IB = 5. m) BaseEmitter Saturation oltage (I = 1 m, IB =.5 m) (I = 1 m, IB = 5. m) BaseEmitter On oltage (I = m, E = 5. ) (I = 1 m, E = 5. ) SMLLSIGNL HRERISIS urrentgain Bandwidth Product (I = 1 m, E = 5. dc, f = 1 MHz) Output apacitance (B = 1, f = MHz) E(sat) BE(sat) BE(on).6.7.9..65.75.82 f 1 MHz ob 4.5 pf Noise Figure (I = m, E = 5. dc, RS = kω, f = khz, BW = 2 Hz) LB856, LB857, LB858 Series LB859 Series NF 1 4. db Rev.O /7

LESHN RDIO OMPNY, LD. LB857L1G Series, S-LB857L1G Series LB857/ LB858 h FE, NORMLIZED D URREN GIN 1.5.7.5. E = 1 = 25, OLGE (OLS).9.8.7.6.5.4..1 = 25 @ I /I =1 BE(sat) B @ = 1 BE(on) E @ I /I = 1 E(sat) B.5 5. 1 2 5 1 2.1.5 5. 1 2 5 1 I, OLLEOR URREN (mdc) Figure 1. Normalized D urrent Gain I, OLLEOR URREN (mdc) Figure 2. Saturation and On oltages E, OLLEOR EMIER OLGE () 1.6 1.2.8.4 I = 1 m I = 2 m I = 5 m = 25 I = 2 m I = 1 m θ B, EMPERURE OEFFIIEN (m/ ) 1.2 1.6 2.4 2.8 55 to +125.2.1 1 2 1 1 I, BSE URREN (m) B Figure. ollector Saturation Region I, OLLEOR URREN (m) Figure 4. BaseEmitter emperature oefficient 4 1., OLGE (OLS) 7. 5.. ib ob =25 f, URREN GIN BNDWIDH PRODU (MHz) 2 1 8 6 4 2 =1 E = 25.4.6 4. 6. 1 2 4.5. 5. 1 2 5, REERSE OLGE (OLS) R Figure 5. apacitances I, OLLEOR URREN (mdc) Figure 6. urrentgain Bandwidth Product Rev.O 4/7

LESHN RDIO OMPNY, LD. LB857L1G Series, S-LB857L1G Series LB856 h FE, D URREN GIN (NORMLIZED), OLLEOR EMIER OLGE (OLS) E.5 1.6 1.2.8.4 = 5. E = 25 I = 1 m I, OLLEOR URREN (m) Figure 7. D urrent Gain 2m 1m I, BSE URREN (m) B Figure 9. ollector Saturation Region 2m θ B, EMPERURE OEFFIIEN (m/ ), OLGE (OLS).8.6.4 1.4 1.8 2.2 2.6 J = 25 BE(sat) @ I /I B = 1 BE @ E = 5. E(sat) @ I /I B = 1.1 5.12 512.5 5. 1 2 5 1 2 5m J = 25.2.5.1.5 5. 1 2 I, OLLEOR URREN (m) Figure 8. On oltage θ B for BE 55 to 125..5 5. 1 2 5 1 2 I, OLLEOR URREN (m) Figure 1. BaseEmitter emperature oefficient, PINE (pf) 4 2 1 8. 6. 4. ib J = 25 ob f, URREN GIN BNDWIDH PRODU E = 5..1.5 5. 1 2 5 1 1 1 5 2 1 5 2, REERSE OLGE (OLS) R Figure 11. apacitance I, OLLEOR URREN (m) Figure 12. urrentgain Bandwidth Product Rev.O 5/7

LESHN RDIO OMPNY, LD. LB857L1G Series, S-LB857L1G Series I, OLLEOR URREN (m) r( t), RNSIEN HERML RESISNE (NORMLIZED).7.5..1.7.5 D=.5.1.5 SINGLE PULSE SINGLE PULSE = 25 J = 25 B558 B557 B556 BONDING WIRE LIMI HERML LIMI SEOND BREKDOWN LIMI E, OLLEOREMIER OLGE () Figure 14. ctive Region Safe Operating rea 1s P (pk) t, IME (ms) Figure 1. hermal Response ms t 1 t 2 Z θj (t) = r(t) R θj R θj = 8. /W MX Z θj (t) = r(t) R θj R θj = 2 /W MX D URES PPLY FOR POWER PULSE RIN SHOWN RED IME t 1 J(pk) = P (pk) R θj (t)..2 DUY YLE, D = t /t 1 2.1.1.5 5. 1 2 5 1 2 5 k k 5.k 1k 2 1 5 1 5..5 1 45 65 1 he safe operating area curves indicate I E limits of the transistor that must be observed for reliable operation. ollector load lines for specific circuits must fall below the limits indicated by the applicable curve. he data of Figure 14 is based upon = 15 ; or J(pk) is variable depending upon conditions. Pulse curves are valid for duty cycles to 1% provided < 15. may be calculated from the data in Figure 1. t high case or ambient J(pk) J(pk) temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by the secondary breakdown. Rev.O 6/7

LESHN RDIO OMPNY, LD. LB857L1G Series, S-LB857L1G Series D L 1 2 G H B S K J NOES: 1. DIMENSIONING ND OLERNING PER NSI Y14.5M, 1982. 2. ONROLLING DIMENSION: INH. DIM INHES MILLIMEERS MIN MX MIN MX.112.1197 2.8.4 B.472.551 1.2 1.4.5.44.89 1.11 D.15.2.7.5 G.71.87 1.78 4 H.5.4.1.1 J.4.7.85.177 K.14.285.5.69 L.5.41.89 2 S.8.19 2.1 2.64.177.26.45.6.7.95.7.95.79.5.9.1.8 inches mm Rev.O 7/7