SIPMOS Small-Signal-Transistor Feature N-Channel Enhancement mode dv/dt rated Pb-free lead plating; RoHS compliant Product Summary V DS 6 V R DS(on).3 W I D.8 PG-SOT-223 4 2 3 VPS563 Type Package Tape and Reel Information P-SOT-223 E6327 PG-SOT-223 L6327 Marking Maximum Ratings, at T j = 25 C, unless otherwise specified Parameter Symbol Value Unit Continuous drain current T =25 C T =7 C Pulsed drain current I D puls 7.2 T =25 C I D.8.44 Reverse diode dv/dt dv/dt 6 kv/µs I S =.8, VDS=4V, di/dt=2/µs, Tjmax=5 C Gate source voltage V GS ±2 V ESD Sensitivity (HBM) as per MIL-STD 883 Class Power dissipation P tot.8 W T =25 C Operating and storage temperature T j, T stg -55... +5 C IEC climatic category; DIN IEC 68-55/5/56 Page 26-5-5
Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Characteristics Thermal resistance, junction - soldering point R thjs - 5 25 K/W SMD version, device on PCB: @ min. footprint @ 6 cm 2 cooling area ) R thj - 8 5-48 7 Electrical Characteristics, at T j = 25 C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Static Characteristics Drain-source breakdown voltage V (BR)DSS 6 - - V V GS =, I D =25µ Gate threshold voltage, V GS = V DS V GS(th).8..8 I D =4µ Zero gate voltage drain current V DS =6V, V GS =, T j =25 C V DS =6V, V GS =, T j =5 C I DSS µ - - - 8. 5 Gate-source leakage current I GSS - n V GS =2V, V DS = Drain-source on-state resistance V GS =V, I D =.8 V GS =4.5V, I D =.8 R DS(on) W -.22.3 -.39.5 Device on 4mm*4mm*.5mm epoxy PCB FR4 with 6cm² (one layer, 7 µm thick) copper area for drain connection. PCB is vertical without blown air. Page 2 26-5-5
Electrical Characteristics, at T j = 25 C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. Dynamic Characteristics Transconductance g fs V DS ³2*I D *R DS(on)max,.8.7 - S I D =.44 Input capacitance C iss V GS =, V DS =25V, - 295 368 pf Output capacitance C oss f=mhz - 95 8 Reverse transfer capacitance C rss - 45 67 Turn-on delay time t d(on) V DD =5V, V GS =4.5V, - 5.4 8. ns Rise time t r - 9.9 5 I D =.44, R G =5W Turn-off delay time t d(off) - 27 4 Fall time t f - 9 28 Gate Charge Characteristics Gate to source charge Q gs V DD =24V, I D =.8 -.9. nc Gate to drain charge Q gd - 5.6 8.4 Gate charge total Q g V DD =24V, I D =.8, - 4 7 V GS = to V Gate plateau voltage V (plateau) V DD =24V, I D =.8-3. 3.8 V Reverse Diode Inverse diode continuous forward current I S T =25 C - -.8 Inv. diode direct current, pulsed I SM - - 7.2 Inverse diode forward voltage V SD V GS =, I F = I S -.84.3 V Reverse recovery time t rr V R =25V, I F =l S, - 36 45 ns Reverse recovery charge Q rr di F /dt=/µs - 38 48 nc Page 3 26-5-5
Power dissipation P tot = f (T ).9 W 2 Drain current I D = f (T ) parameter: V GS ³ V.9.6.6.4.4 Ptot.2 ID.2.8.8.6.6.4.4.2.2 2 4 6 8 2 C 6 T 2 4 6 8 2 C 6 T 3 Safe operating area I D = f ( V DS ) parameter : D =, T = 25 C R DS(on) = V DS / I D t p = 5.µs ms 4 Transient thermal impedance Z thj = f (t p ) parameter : D = t p /T 2 K/W ID ms ZthJ D =.5.2 -. DC - single pulse.5.2. -2 V 2 V DS Page 4-2 -5-4 -3-2 - 2 s 4 t p 26-5-5
5 Typ. output characteristic I D = f (V DS ) parameter: T j = 25 C, V GS 6 Typ. drain-source on resistance R DS(on) = f (I D ) parameter: Tj = 25 C, V GS ID 3.6 3 2.7 2.4 2. 5V 6V 7V V 4.2V 3.8V RDS(on).8 W 5V 6V.4 7V V.2 2.4V 2.8V 3V 3.4V 3.8V4.2V.8.5.2 3.4V 3V.8.6.9.6.3 2.8V 2.4V.4.2.5.5 2 2.5 3 3.5 4 V 5 V DS 7 Typ. transfer characteristics I D = f ( V GS ); V DS ³ 2 x I D x R DS(on)max parameter: Tj = 25 C 2.5.6.2.8 2.4 3.6 I D 8 Typ. forward transconductance g fs = f(i D ) parameter: Tj = 25 C 2.5 S ID.5 gfs.5.5.5.5.5 2 2.5 3 V 4 V GS.6.2.8 2.4 V 3.6 I D Page 5 26-5-5
9 Drain-source on-state resistance R DS(on) = f (T j ) parameter : I D =.8, V GS = V.75 W.6 Typ. gate threshold voltage V GS(th) = f (T j ) parameter: V GS = V DS ; I D = m 2.2 V.8 98% RDS(on).55.5.45.4 VGS(th).6.4.2 typ..35.3.25.2 98% typ.8.6 2%.5..5.4.2-6 -2 2 6 C 8-6 -2 2 6 C 6 T j T j Typ. capacitances C = f (V DS ) parameter: V GS =, f= MHz, Tj = 25 C 3 2 Forward character. of reverse diode I F = f (V SD ) parameter: T j pf Ciss Coss IF C 2 Crss - T j = 25 C typ T j = 5 C typ T j = 25 C (98%) T j = 5 C (98%) 5 5 2 V 3 V DS Page 6-2.4.8.2.6 2 2.4 V 3 V SD 26-5-5
3 Typ. avalanche energy E S = f (T j ) par.: I D = 3.9, V DD = 25 V, R GS = 25 W 6 mj 4 Typ. gate charge V GS = f (Q G ); parameter: V DS, I D =.8 pulsed, T j = 25 C 6 V 2 ES 4 VGS 3 8 2 6 4 2.2 VDS max.5 V DS max.8 V DS max 2 4 6 8 2 C 6 T j 4 8 2 6 nc 24 Q G 5 Drain-source breakdown voltage V (BR)DSS = f (T j ) V 6 V(BR)DSS 57 56 55 54 53 52 5 5 49 48 47 46 45-6 -2 2 6 C 8 T j Page 7 26-5-5
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