Revisiting the Power-Efficiency Trade-Off on a DC Voltage Source

Similar documents
Modeling and Design of High-Efficiency Power Amplifiers Fed by Limited Power Sources

Circuit Theorems Overview Linearity Superposition Source Transformation Thévenin and Norton Equivalents Maximum Power Transfer

UNIVERSITY F P RTLAND Sch l f Engineering

Electrical Circuits I Lecture 8

UNIT 4 DC EQUIVALENT CIRCUIT AND NETWORK THEOREMS

CHAPTER 4. Circuit Theorems

Electronics. Basics & Applications. group talk Daniel Biesinger

Thevenin Norton Equivalencies - GATE Study Material in PDF

Chapter 5 Objectives

CHAPTER FOUR CIRCUIT THEOREMS

D C Circuit Analysis and Network Theorems:

Chapter 4. Techniques of Circuit Analysis

Midterm Exam (closed book/notes) Tuesday, February 23, 2010

Chapter 5. Department of Mechanical Engineering

OUTCOME 3 - TUTORIAL 2

SOME USEFUL NETWORK THEOREMS

Chapter 4 Circuit Theorems

Thevenin equivalent circuits

JFET Homework. Nov. 4, 2007, rev. Nov. 12, 2015

Electronics II. Midterm #1

Tutorial #4: Bias Point Analysis in Multisim

Study Notes on Network Theorems for GATE 2017

TRANSIENT ANALYSIS OF SELF-EXCITED INDUCTION GENERATOR UNDER BALANCED AND UNBALANCED OPERATING CONDITIONS

Chapter 10 AC Analysis Using Phasors

Sinusoidal Steady State Analysis (AC Analysis) Part II

ID # NAME. EE-255 EXAM 3 April 7, Instructor (circle one) Ogborn Lundstrom

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π MOSIII) 2SK2610

Lecture Notes on DC Network Theory

Chapter 2 Direct Current Circuits

Electron Theory of Charge. Electricity. 1. Matter is made of atoms. Refers to the generation of or the possession of electric charge.

ECE2262 Electric Circuits

DC motors. 1. Parallel (shunt) excited DC motor

Introduction to AC Circuits (Capacitors and Inductors)

Chapter 2. Engr228 Circuit Analysis. Dr Curtis Nelson

13. Faraday s Law. S. G. Rajeev. March 3, 2009

Biasing the CE Amplifier

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅣ) TPC8114. DC (Note 1) I D 18 A Pulse (Note 1) I DP 72

Basics of Network Theory (Part-I)

TPC8116-H TPC8116-H. High Efficiency DC/DC Converter Applications Notebook PC Applications Portable Equipment Applications CCFL Inverter Applications

Experiment #6. Thevenin Equivalent Circuits and Power Transfer

16.1 Electrical Current

Voltage, Current, Resistance, and Ohm's Law

Let V1=12V, R1=50 ohms, R2=10K ohms, R3=2K ohms, and R4=500 ohms. RL represents the load placed on the circuit between points Aand B.

Ideal wires, Ideal device models, Ideal circuits. Ideal models for circuit elements Wires

Electrical Engineering Technology

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) TPC6004

Fig. 1 Fig. 2. Calculate the total capacitance of the capacitors. (i) when connected as in Fig. 1. capacitance =... µf

Lecture 6: Impedance (frequency dependent. resistance in the s- world), Admittance (frequency. dependent conductance in the s- world), and

Chapter 28. Direct Current Circuits

Fig. 1-1 Current Flow in a Resistive load

TOSHIBA Field Effect Transistor Silicon N, P Channel MOS Type. (P Channel U MOS IV/N Channel U-MOS III) TPC8405. Rating P Channel N Channel

Designing Information Devices and Systems I Spring 2019 Homework 7

UNIVERSITY OF CALIFORNIA, BERKELEY College of Engineering Department of Electrical Engineering and Computer Sciences

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U MOSⅢ) TK30A06J3

MCE603: Interfacing and Control of Mechatronic Systems. Chapter 1: Impedance Analysis for Electromechanical Interfacing

University of Alabama Department of Physics and Astronomy. Problem Set 4

Lecture 11 - AC Power

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS IV) TPC8026

Notes for course EE1.1 Circuit Analysis TOPIC 10 2-PORT CIRCUITS

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS III) TPCF8102

TPC8203 TPC8203. Lithium Ion Battery Applications Portable Equipment Applications Notebook PCs. Maximum Ratings (Ta = 25 C) Circuit Configuration

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅣ) TPCA8103

EE-201 Review Exam I. 1. The voltage Vx in the circuit below is: (1) 3V (2) 2V (3) -2V (4) 1V (5) -1V (6) None of above

TPCS8209 查询 TPCS8209 供应商 TPCS8209. Lithium Ion Battery Applications Notebook PC Applications Portable Machines and Tools. Maximum Ratings (Ta = 25 C)

Circuits Practice Websheet 18.1

Direct Current (DC): In a DC circuit the current and voltage are constant as a function of time. Power (P): Rate of doing work P = dw/dt units = Watts

Electronics II. Final Examination

Lecture #3. Review: Power

CSE140L: Components and Design Techniques for Digital Systems Lab. Power Consumption in Digital Circuits. Pietro Mercati

XII PHYSICS [CURRENT ELECTRICITY] CHAPTER NO. 13 LECTURER PHYSICS, AKHSS, K.

EE 330 Lecture 22. Small Signal Modelling Operating Points for Amplifier Applications Amplification with Transistor Circuits

Electrical Circuits. Winchester College Physics. makptb. c D. Common Time man. 3rd year Revision Test

Designing Information Devices and Systems I Fall 2018 Lecture Notes Note Introduction: Op-amps in Negative Feedback

Prof. Anyes Taffard. Physics 120/220. Voltage Divider Capacitor RC circuits

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS IV) TPC8028

The equivalent model of a certain op amp is shown in the figure given below, where R 1 = 2.8 MΩ, R 2 = 39 Ω, and A =

15EE103L ELECTRIC CIRCUITS LAB RECORD

Outline of College Physics OpenStax Book

E40M Charge, Current, Voltage and Electrical Circuits. M. Horowitz, J. Plummer, R. Howe 1

PHYS 375: Introduction

2. The following diagram illustrates that voltage represents what physical dimension?

Chapter 10: Sinusoidal Steady-State Analysis

Lecture 5 Review Current Source Active Load Modified Large / Small Signal Models Channel Length Modulation

Revision checklist SP10. SP10 Electricity and Circuits. SP10a Electric circuits. SP10b Current and potential difference

MAE140 - Linear Circuits - Fall 14 Midterm, November 6

ECE2262 Electric Circuits. Chapter 5: Circuit Theorems

4.2.1 Current, potential difference and resistance

TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (Ultra-High-speed U-MOSIII) TPCA8011-H

Lecture # 2 Basic Circuit Laws

PMV65XP. 1. Product profile. 2. Pinning information. P-channel TrenchMOS extremely low level FET. 1.1 General description. 1.

Prepare for this experiment!

Supplementary Figure 1.

A Simple Energy Model for the Harvesting and Leakage in a Supercapacitor

Module 1, Add on math lesson Simultaneous Equations. Teacher. 45 minutes

CHAPTER 20 ELECTRIC CIRCUITS

Prepare for this experiment!

Calculate the total resistance of this combination. (3)

ENGI 1040: ELECTRIC CIRCUITS Winter Part I Basic Circuits

EECE251 Circuit Analysis I Lecture Integrated Program Set 3: Circuit Theorems

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII) 2SK3236

Transcription:

Revisiting the Power-Efficiency Trade-Off on a DC Voltage Source Arturo Fajardo Jaimes 1,2, Fernando Rangel de Sousa 1 1- Radiofrequency Department of Electrical and Electronics Engineering UFSC Florianpolis, Brazil 2- Department of Electronics Engineering Pontifical Xavierian University (PUJ) Bogota, Colombia

Table of Content Introduction Power-efficiency trade-off This work Efficiency in a voltage source Power-efficiency trade-off PETO for lossless voltage source (R ss = 0, R sp = PETO for voltage source w/o loss of self consumption (R ss 0, R sp = ) PETO for general voltage source (R ss 0, R sp ) Experimental verification Conclusions References 2

Power-efficiency trade-off I Energy conversion processes are characterized by a trade-off between output power and efficiency. Earliest work about electric-mechanic conversion (1978) Edison and his chief assistants researched the design techniques for DC electric generators, and determined that a generator with smaller internal resistance than its load is more efficient than a generator with internal resistance equal to its load [1]. 3

Power-efficiency trade-off II Nanoscale energy conversion Molecular motors (2016) At the nanoscale new possibilities and phenomena arise. For example, chemical energy can be converted directly into useful work (molecular motors). This diagram shows the calculated output power versus efficiency of a molecular motor (dashed) near equilibrium and (solid) far from equilibrium for (blue) perfect coupling and (red) weak loss processes [2]. 4

Power-efficiency trade-off III PETO and Portable Electronic devices Most of the electronic devices must be portable and must be connected to the Internet [3] Typically, the device portability is associated to the energy technologies that has been adopted [4]. The designer of PEDs must face a tradeoff between functionality (i.e. dissipated power) and portability (i.e. battery running time, weight, size) [5]. 5

About this work The problem The designer of PEDs need to take into account the PETO in order to achieve the required specifications and, as a result, an optimum operating point (i.e. optimum load) could be found and then could be used as a constraint in the electronic design of the system. The Proposed Solution In this work an analytic expression is developed for quantifying the PETO on a DC Voltage Source with and without limited energy. η sc = 1 p L ξ 1 + ξ k p L 6

Efficiency in a voltage source I Modeling the DC source A common technique for modeling a real voltage source is the use of the Norton or Thevenin equivalent circuit as its model. RS Real DC Voltage Source Vth Models Vth/Rth Rth Rth Rth<< Vth Rth>> Vth/Rth 7

Efficiency in a voltage source II Observation The equivalent circuit predicts only the current and voltage performance of the source, from the load point of view. Efficiency values predicted by both models Without knowledge about the physical laws that govern the internal source behaviors, we cannot predict accurately its efficiency. 8

PETO for voltage source The PETO is discussed for any energy source that can be modeled using the circuits shown: With infinite energy With finite energy DC source i s V v s Rsp Rss i L v L DC source V Qn i s v s Rsp Rss i L v L 9

Ideal battery model In [6] was proposed a battery model based on the circuit shown: Symbol Circuit model V Qn i s vs V z =1 V f =0 SoE -i s C=Q n v s i s ìv SoE > 0 =í î0 SoE = 0 10

PETO R ss = 0, R sp = Efficiency and power expressions For this circuit the efficiency is a load independent variable, therefore PETO does not occur. P La = V 2 ; (1) η sa = 1. (2) (a) Load power and efficiency vs load 11 (b) Efficiency vs power

PETO R ss 0, R sp = I Efficiency and power expressions P Lb = 4P avs ( η sb = ηsa 1 + Rss Rss 1 + Rss ) 2 ; (3) ; (4) P avs = V 2 p L = 4 Rss ; (5) P Lb 4 Rss = ( ) P avs 1 + Rss 2. (6) (a) Load power and efficiency vs load (b) Efficiency vs power 12

PETO R ss 0, R sp = II Quantifying the PETO The better compromise between efficiency and power occurs in the load range where the PETO exists. The limits are: 100% of η and 100% of p L. We cannot achieve these limits simultaneously. (p L = 0, η = 1) or (p L = 1, η = 0.5) A good compromise of this PETO is p L = 0.75, η = 0.75. In all the operating points of this PETO, the relationship between the p L and the η is described by: η sb = 1 p L ξ ; where, ξ=2 ( 1 + 1 p L ), and Rss. 13

PETO R ss 0, R sp I Efficiency and power expressions P Lc = P Lb = 4P avs ( Rss 1 + Rss ) 2 ; (7) η sb η sc = ( ( ) ) ; (8) Rss Rsp Rss + 1 + 1 P avs = V 2 p L = 4 Rss ; (9) P Lb 4 Rss = ( ) P avs 1 + Rss 2. (10) (a) Load power and efficiency vs load (b) Efficiency vs power 14

PETO R ss 0, R sp II Quantifying the PETO The PETO range is limited by the maximum η and minimum p L point and the minimum η and maximum p L point. Defining the source quality factor as k = Rsp Rss : max { } k k + 1 η s c = ( ) ( ) 1 + k + k + 1 k + k + 1 max {p L } = 1 The extreme Load values are: = p = R ss = η = Rss k + 1 p is the load value that maximizes p L. η is the load value that maximizes η 15

PETO R ss 0, R sp III Quantifying the PETO When is in the PETO range ( p η ), the load power can increase only if the efficiency decrease and vice versa. In all the operating points of this PETO, the relationship between the p L and the η is described by: η sc = 1 p L ξ 1 + ξ k p L where, Rss k + 1 Rss and ξ=2 ( 1 + 1 p L ). Having a high k value means that the power supply is good, i.e. both the self consumption and the internal conduction losses are low. 16

Experimental verification Experimental Setup Real DC voltage source i L v L The implemented system is a demonstrator of the validity of the analytic function rather than targeting a specific application. The real DC source (k = 90) was emulated using a power supply (1 V < V < 10 V) and two discrete resistors (Rsp = 100 kω, Rss = 1.1 kω), the electric load was an adjustable resistor (100mΩ < R L < 10 MΩ). Using this setup, both the resistive load and the input voltage were swept. 17

Experimental and theoretic results I 2334546758!(+!(*!()!(#!($!(%!(&!('!(.!! "#! "$! "%! "&! "',-./01 (a) Efficiency vs load power 96:;.<47=! <..>=+!(#* +?@6-.<47=! <..>=+!(+!+ 96:;.<47=!'<..>=+!(#* +?@6-.<47=!'<..>=+!(+!+ 96:;.<47=!&<..>=+!(#* +?@6-.<47=!&<..>=+!(+!+ 96:;.<47=!%<..>=+!(#* +?@6-.<47=!%<..>=+!(+!+ 96:;.<47=!$<..>=+!(#* +?@6-.<47=!$<..>=+!(+!+ 96:;.<47=!#<..>=+!(#* +?@6-.<47=!#<..>=+!(+!+ 96:;.<47=!)<..>=+!(#* +?@6-.<47=!)<..>=+!(+!+ 96:;.<47=!*<..>=+!(#* +?@6-.<47=!*<..>=+!(+!+ 96:;.<47=!+<..>=+!(#* +?@6-.<47=!+<..>=+!(+!+ 96:;.<47=!<..>=+!(#* +?@6-.<47=!<..>=+!(+!+ 18

Experimental and theoretic results II.//0102314!+,!%!*!$!)!#!(!"!& '!& 5!"!#!$!% &,- (b) Efficiency vs normalized load power 5 62785903: &955;:+!$%&+ <=2>5903: &955;:+!+ +& 62785903: "955;:+!$%&+ <=2>5903: "955;:+!+ +& 62785903: (955;:+!$%&+ <=2>5903: (955;:+!+ +& 62785903: #955;:+!$%&+ <=2>5903: #955;:+!+ +& 62785903: )955;:+!$%&+ <=2>5903: )955;:+!+ +& 62785903: $955;:+!$%&+ <=2>5903: $955;:+!+ +& 62785903: *955;:+!$%&+ <=2>5903: *955;:+!+ +& 62785903: %955;:+!$%&+ <=2>5903: %955;:+!+ +& 62785903: +955;:+!$%&+ <=2>5903: +955;:+!+ +& 62785903:& 955;:+!$%&+ <=2>5903:& 955;:+!+ +& 19

Conclusions In this paper an analytic expression was developed and used for quantifying the power-efficiency trade-off involved in DC voltage source that supplies energy to an electric load. 20

Conclusions In this paper an analytic expression was developed and used for quantifying the power-efficiency trade-off involved in DC voltage source that supplies energy to an electric load. The expression was validated by an experimental demonstrator, with good agreement between the results and the predicted values. 21

Conclusions In this paper an analytic expression was developed and used for quantifying the power-efficiency trade-off involved in DC voltage source that supplies energy to an electric load. The expression was validated by an experimental demonstrator, with good agreement between the results and the predicted values. The analytical work developed would be a useful tool for designers and students in order to understand and solve a lot of confusion and myths about power supply efficiency and life time of the battery. 22

References I [1] R. E. Stross, The wizard of menlo park: how thomas alva edison invented the modern world. New York: Three Rivers Press (CA), 2008. [2] [Online]. Available: http://www.physics.otago.ac.nz/research/epg/research [3] Z. Pang, Technologies and architectures of the internet-of-things (iot) for health and well-being, Dept. Elect. Eng, Ph.D. thesis, Royal Institute of Technology Univ., Stockholm, Sweden. 2013. [4] R. W. Erickson and D. Maksimovic, Fundamentals of power electronics. New York: Springer, 2001. [5] S. D Ambrosio, S. De Pasquale, G. Iannone, D. Malandrino, A. Negro, G. Patimo, A. Petta, V. Scarano, L. Serra, and R. Spinelli, Mobile phone batteries draining: Is green web browsing the solution? in Proc. 2014 Green Computing Conf., Nov 2014, pp. 1 10. [6] A. Fajardo and F. Rangel de Sousa, Ideal energy power source model and its implications on battery modeling, presented at the XXII IBERCHIP Workshop, Florianopolis, Brasil. 2016. 23

Obrigado E-mail: fajardoa@javeriana.edu.co Site: http://lrf.ufsc.br/