EVG 810LT Series LowTemp Plasma Activation Systems

EVG 810LT Series LowTemp Plasma Activation Systems

EVG 810LT Series LowTemp Plasma Activation Systems Introduction EV Group s LowTemp (LT) Plasma Activated Bonding is available for both R&D and high volume manufacturing. The EVG LowTemp plasma activation chamber was developed for modular operation. It can be configured as single chamber, stand alone, semi-automated unit (EVG810LT) or integrated in an automated configuration for high volume production (EVG850LT and GEMINI). The EVG810LT stand alone LowTemp plasma activation system is suitable for applications such as direct bonding for manufacturing of SOI (Silicon-on-Insulator), strained silicon, GeOI (Germanium-on-Insulator) wafers as well as for compound semiconductor applications and MEMS devices. On the EVG850LT and GEMINI the plasma activation process is the enabling technology for low temperature bonding for CMOS (e.g. imaging sensors, etc.) and Memory (e.g. Flash, SRAM, etc.) applications. Unique Features / System Configuration Surface activation for low temperature bonding (fusion/ molecular and intermediate layer bonding) Fastest kinetics of any wafer bonding mechanism No wet processes required Highest bond strength at low temperature annealing (up to 400 C) Applicable for SOI, MEMS, compound semiconductors and advanced substrates bonding High degree of materials compatibility (including CMOS) Accommodates various substrate chemistries by allowing the use of different process atmospheres: inert gas, oxidizing or reducing gas mixtures Low process gas consumption No contamination issues (particle neutral, metal free) Patented technology Two platform sizes (up to 200mm wafers and up to 300mm wafers) 200mm LowTemp plasma activation chamber 300mm LowTemp plasma activation chamber LowTemp Plasma Activation Chamber The use of a special electrode geometry and external RF generator enables plasma generation for wafer surface activation. Process monitoring is available through software and directly through the view ports in the lid. The dry activation plasma bonding considerably reduces the annealing temperatures (200 C - 400 C) and times (1-3 hours) by maintaining bond strength. By applying plasma activation, the surface chemistry of two materials to be bonded can be tailored to allow formation of stronger chemical bonds than achievable for non-activated surfaces. The plasma activation is enabling low temperature wafer bonding (fusion and intermediate layer bonding), leads to fastest kinetics of any wafer bonding mechanism and to stress/damage free annealing of thermally mismatched materials. 2

EVG GEMINI 300 mm LowTemp plasma activation module EVG 810LT 200mm LowTemp plasma activation system Software and process control on EVG 810LT LowTemp Plasma Activation System The EVG810LT LowTemp plasma activation system is a single chamber, stand-alone unit with manual operation. The process chamber allows ex situ processes (wafers are activated one by one and bonded outside the plasma activation chamber). This manual plasma activation system is used for research and development (e.g. studies on integration of thermally mismatched materials at wafer level, bonding of compound semiconductors and small volume production). Software and Process Control Windows based graphical user interface provides three access levels of the process control software (operator, engineer and maintenance). The plasma activation process is fully software controlled with programmable parameters including vacuum level, process gas, chamber pressure, generators frequency and power as well as plasma activation time. All process data is stored in log files. 3

EVG 810LT Series LowTemp Plasma Activation Systems Modular Design EVG LowTemp Plasma Activation Series Chamber The EVG LowTemp plasma activation chamber was developed to be installed on semi-automated systems for research and development as well as for integration into fully automated systems for high volume manufacturing. The semi-automated system (EVG810LT) is a single chamber, stand alone unit for universities and research application labs. The automated system for mechanically aligned SOI/Direct Wafer bonding (EVG850LT) can be equipped with multiple LowTemp plasma activation chambers and is used for high volume layer transfer applications. Also EVG's automated optically aligned production wafer/fusion bonding systems (GEMINI) can be equipped with LowTemp plasma activation chambers. Materials Systems qualified with LowTemp Plasma Activated Bonding (selected Examples only) Si: Si/Si, Si/Si (thermally oxidized), Si Compound semiconductors: GaAs, GaP, InP (thermally oxidized)/si (thermally oxidized) Polymers: PMMA, Cyclo Olefin Polymers TEOS/TEOS (thermally oxidized) (e.g. Zeonex, Topas) Si/Ge for Germanium-on-Insulator (GeOI) "Best Known Method" recipes available for Si/SiN users for the above and for other materials Glass (borofloat, non-alkali): Si/Glass, Glass/Glass (full list available on request) Automated Wafer Handling System The field proven class 1 compatible wafer handling robot on EVG805LT and GEMINI enables 24 hour automated cassetteto-cassette or FOUP-to-FOUP operation for the highest throughput. Surfaces in contact with wafers do not cause any metal ion contamination. Class 1* Mini-Environment EVG LowTemp plasma activation systems can be equipped with class 1 mini-environment filter fan unit to ensure particlefree operation. *according to US FED STD 209E EVG 850LT Production bonder for SOI and direct wafer bonding 200mm LowTemp plasma activation chamber on EVG 850LT Production Bonder with LowTemp Plasma Activation The EVG850LT automated system for mechanically aligned SOI/Direct Wafer bonding is equipped with EVG's LowTemp plasma activation chambers. After surface activation the wafers are directly bonded on EVG's field proven pre-bonding station that is standard for SOI/Wafer Direct Bonding using mechanical flat-to-flat or notch-tonotch alignment. After the pre-bonding step the bonded wafer pair is placed on the IR-inspection station for quality inspection. The plasma activation chamber on this automated system is used for Advanced Packaging and 3D Integration applications when mechanical alignment is sufficient. 4

EVG 810LT LowTemp plasma activation system up to 300mm GEMINI FB automated production fusion bonding system LowTemp plasma activation module in a GEMINI system Automated Production Wafer / Fusion Bonding System with LowTemp Plasma Activation The GEMINI automated system for optically aligned production wafer/fusion bonding is equipped with EVG's LowTemp plasma activation series chambers. After surface activation the wafers are loaded on EVG's unique SmartView, optically aligned and directly bonded. After this sequence the bonded wafer pair can be placed on the IR-inspection station for quality inspection. The LowTemp plasma activation chamber on this automated system is used for Advanced Packaging and 3D Integration applications where the alignment accuracy of two patterned wafers to each other is critical. 5

EVG 810LT Series LowTemp Plasma Activation Systems Technical Data EVG 810LT EVG 850LT GEMINI LT GEMINI FB XT Max. wafer size (mm) 200 / 300 200 / 300 Min. wafer size (mm) 50 / 100 100 / 150 Max. substrate size (mm x mm) 140 x 140 / 210 x 210 N/A Min. substrate size (mm x mm) 50 x 50 / 100 x 100 N/A Chucks for different wafer sizes Metal ion free activation Option (conversion takes less than 30 min) 2 standard process gases: N 2 and O 2 Max. 4 process gases 2 additional process gases: high purity gases ( 99.999%), noble gases (Ar, He, Ne, etc.), forming gases ( 95% N 2, Ar, He with 5% H 2 ) Universal mass flow controller Type: self calibrating for up to 4 process gases, recipe programmable Flow rate: up to 200 sccm Vacuum system Vacuum level: 9x10-2 mbar (standard) High vacuum system with turbo pump Vacuum level: 9x10-3 mbar (option) High frequency RF generators Standard Matching unit Standard Opening/closing of chamber Automated Process license and BKM recipe Standard Supports optically aligned wafer bonding N/A Standard Loading/unloading of chamber (wafer / substrate placed on loading pins) Manual Automated Process compatibility with EVG 850 and GEMINI Standard Max. number of LowTemp plasma activation chambers 1 2 Class 1 mini-environment* Option Automated wafer handling system N/A Standard Fab automation integration (SECS/GEM) Option R&D Production Scale Pilot HVM Option Other sizes, process gases, features and configurations upon request *according to US FED STD 209E 200mm LowTemp plasma activation chamber on EVG 810LT 200mm LowTemp plasma activation chamber on GEMINI 6

Process Results IR image of void free bonded wafer pair after plasma activation Courtesy of LETI Bonding energy measurement on wafer pair with dedicated oxide thickness Courtesy of LETI Maximum bond strength at low annealing temperature: Bond interface stronger than oxide layer, oxide transfer from one wafer to the other Courtesy of LETI Plasma activation enables high surface energy (exceeding Si bulk fracture strength) at low annealing temperature and reduced time Source: EVG 7

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