HiPerFAST TM IGBT with Diode C2-Class High Speed IGBTs IXGH 3N6C2D1 IXGT 3N6C2D1 S = 6 V 2 = 7 A (sat) = 2.7 V t fi typ = 32 ns Symbol Test Conditions Maximum Ratings S = 2 C to 1 C 6 V V CGR = 2 C to 1 C; R GE = 1 MΩ 6 V V GES Continuous ±2 V V GEM Transient ±3 V 2 = 2 C (limited by leads) 7 A 11 = 11 C 3 A M = 2 C, 1 ms 1 A SSOA V GE = 1 V, = 12 C, R G = 1 Ω M = 6 A (RBSOA) Clamped inductive load @ 6 V P C = 2 C 19 W -... +1 C M 1 C T stg -... +1 C Maximum lead temperature for soldering 3 C 1.6 mm (.62 in.) from case for 1 s Plastic body for 1s 2 C M d Mounting torque (TO-247) 1.13/1Nm/lb.in. Weight TO-247 6 g TO-268 4 g Symbol Test Conditions Characteristic Values ( = 2 C, unless otherwise specified) min. typ. max. V GE(th) = 2 µa, = V GE 2.. V ES = S = 2 C 2 µa V GE = V = 12 C 3 ma I GES = V, V GE = ±2 V ±1 na (sat) = 1 V = 2 C 2.7 V = 12 C 1.8 V TO-247 AD (IXGH) G = Gate, E = Emitter, Features Very high frequency IGBT Square RBSOA High current handling capability MOS Gate turn-on - drive simplicity Applications PFC circuits Uninterruptible power supplies (UPS) Switched-mode and resonant-mode power supplies AC motor speed control DC servo and robot drives DC choppers Advantages G C E TO-268 (IXGT) G E C = Collector, TAB = Collector C (TAB) C (TAB) High power density Very fast switching speed for high frequency aaplications High power surface mountable package 2 IXYS All rights reserved DS99169A(1/)
IXGH 3N6C2D1 IXGT 3N6C2D1 Symbol Test Conditions Characteristic Values ( = 2 C, unless otherwise specified) min. typ. max. TO-247 AD Outline g fs = 24 A; = 1 V, 18 28 S Pulse test, t 3 µs, duty cycle 2 % C ies 143 pf C oes = 2 V, V GE = V, f = 1 MHz 14 pf C res 4 pf Q g 7 nc Q ge = 1 V, = 3 V 1 nc Q gc 23 nc t d(on) 13 ns t ri Inductive load, = 2 C 1 ns = 1 V 7 14 ns V t CE = 4 V, R G = Ω fi 6 ns.19.3 mj t d(on) 13 ns t ri 17 ns Inductive load, = 12 C E on.22 mj = 1 V 12 ns = 4 V, R G = Ω t fi 13 ns.9 mj Dim. Millimeter Inches Min. Max. Min. Max. A 4.7.3.18.29 A 1 2.2 2.4.87.12 A 2 2.2 2.6.9.98 b 1. 1.4.4. b 1 1.6 2.13.6.84 b 2 2.87 3.12.113.123 C.4.8.16.31 D 2.8 21.46.819.84 E 1.7 16.26.61.64 e.2.72.2.22 L 19.81 2.32.78.8 L1 4..177 P 3. 3.6.14.144 Q.89 6.4.232.22 R 4.32.49.17.216 S 6.1 BSC 242 BSC TO-268 Outline e P R thjc.6 K/W R thck (TO-247).2 K/W Reverse Diode (FRED) Characteristic Values ( = 2 C, unless otherwise specified) Symbol Test Conditions min. typ. max. V F = 3 A, V GE = V, Pulse test =1 C 1.6 V t 3 µs, duty cycle d 2 % 2. V I RM = 3 A, V GE = V, -di F /dt =1 A/µs, = 1 C 4 A t rr V R = 1 V = 1 C 1 ns = 1 A; -di/dt = 1 A/µs; V R = 3 V 2 ns.9 K/W R thjc IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,83,92 4,931,844,49,961,237,481 6,162,66 6,44,6 B1 6,683,344 6,727,8 one or moreof the following U.S. patents: 4,8,72,17,8,63,37,381,2 6,29,123 B1 6,34,343 6,71,4B2 6,79,692 4,881,16,34,796,187,117,486,71 6,36,728 B1 6,83, 6,71,463 6771478 B2
IXGH 3N6C2D1 IXGT 3N6C2D1 4 4 3 3 2 2 1 1 Fig. 1. Output Characteristics @ 2 Deg. C 13V 11V 9V 7V 27 24 21 18 1 12 9 6 Fig. 2. Extended Output Characteristics @ 2 deg. C 13V 11V 9V 7V. 1 1. 2 2. 3 3. V 3 2 4 6 8 1 12 14 16 18 V 4 4 Fig. 3. Output Characteristics @ 12 Deg. C 13V 11V 9V 1.2 1.1 Fig. 4. Dependence of (sat ) on Temperature V GE = 1V = 48A 3 3 2 2 1 1 7V V ( sat ) - Normalized 1..9.8.7.6 = 24A = 12A. 1 1. 2 2. 3 3.. 2 7 1 12 1 - Degrees Centigrade 4. Fig.. Collector-to-Emitter Voltage vs. Gate-to-Em itter voltage 2 Fig. 6. Input Admittance 4 3. 3 = 48A 24A 12A = 2ºC 18 16 14 12 1 8 6 2. 4 2 = 2ºC 12ºC 2 6 7 8 9 1 11 12 13 14 1 16 17 V G E 3 4 6 7 8 9 1 11 12 V G E 2 IXYS All rights reserved
IXGH 3N6C2D1 IXGT 3N6C2D1 3 Fig. 7. Transconductance 2 Fig. 8. Dependence of Turn-Off Ene r gy on R G g f s - Siemens 3 2 2 1 1 = 2ºC 12ºC - microjoules 18 16 14 12 1 8 6 = 12ºC = 4V = 48A = 24A 4 2 = 12A 2 4 6 8 1 12 14 16 18 2 1 1 2 2 3 3 4 4 R G - Ohms 14 Fig. 9. Dependence of Turn-Off Ene r gy on 14 Fig. 1. Dependence of Turn-Off Energy on Temperature - microjoules 12 1 8 6 4 R G = Ω = 4V = 12ºC - microjoules 12 1 8 6 4 R G = Ω = 4V = 48A = 24A 2 = 2ºC 1 1 2 2 3 3 4 4 2 = 12A 2 3 4 6 7 8 9 1 11 12 - Degrees Centigrade 4 Fig. 11. Dependence of Turn-Off Switching Time on R G 2 Fig. 12. Dependence of Turn-Off Sw itching Time on Switching Time - nanosecond 4 3 3 2 2 1 t fi - - - - - - = 12ºC = 4V = 48A = 24A = 12A Switching Time - nanosecond 18 16 14 12 1 8 6 t fi - - - - - - R G = Ω = 4V = 12ºC = 2ºC 1 1 1 2 2 3 3 4 4 R G - Ohms 4 1 1 2 2 3 3 4 4
IXGH 3N6C2D1 IXGT 3N6C2D1 18 Fig. 13. Dependence of Turn-Off Switching Time on Temperature 1 Fig. 14. Gate Charge Switching Time - nanosecond 16 14 12 1 8 6 t fi - - - - - - R G = Ω = 4V = 48A 24A 12A = 12A 24A 48A V G E 12 9 6 3 = 3V = 24A I G = 1mA 4 2 3 4 6 7 8 9 1 11 12 - Degrees Centigrade 1 2 3 4 6 7 Q G - nanocoulombs Fig. 1. Capacitance 1 f = 1 MHz C ies Capacitance - p F 1 1 C oes 1 C res 1 1 2 2 3 3 4 1. Fig. 16. Maximum Transient Thermal Resistance R (th) J C - (ºC/W)..1 1 1 1 1 Pulse Width - milliseconds 2 IXYS All rights reserved
IXGH 3N6C2D1 IXGT 3N6C2D1 IF 6 A 4 3 2 =1 C =1 C 1 Q r nc 8 6 4 3 = 1 C A = 1 C = 6A = 3A I RM 2 2 1 1 = 6A = 3A 1 =2 C 2 1 2 3 V 1 A/µs 1 2 4 6 A/µs 8 1 V F -di F /dt -di F /dt Fig. 17. Forward current versus V F Fig. 18. Reverse recovery charge Fig. 19. Peak reverse current I RM K f 2. 1. 1. 9 ns t fr t rr 1.7 8 = 6A = 3A 2 = 1 C = 1 C V FR V 1 t fr V FR 1. µs. I RM 7..2 Q r. 4 8 12 C 16 6 2 4 6 A/µs 8 1 -di F /dt. 2 4 6 A/µs 8 1 di F /dt Fig. Fig. 2. 2. Dynamic parameters QQ r, I r, RM I RM Fig. 21. Recovery time t rr versus Fig. 22. Peak forward voltage V FR 1 K/W Constants for Z thjc calculation: i R thi (K/W) t i (s) Z thjc.1 1.2.2 2.193.3.1 DSEP 29-6.1.1.1.1.1.1 s 1 t Fig. 23. Transient thermal resistance junction to case