Preliminary Technical Information Linear L2 TM Power MOSFET with extended FBSOA IXTH3NL2 IXTQ3NL2 IXTT3NL2 S I D25 R DS(on) = V = 3A mω N-Channel Enhancement Mode Avalanche rated TO-7 Symbol Test Conditions Maximum Ratings S = 25 C to C V V DR = 25 C to C, R S = 1MΩ V S Continuous ±2 V M Transient ±3 V I D25 = 25 C 3 A I DM = 25 C, pulse width limited by M 8 A I A = 25 C 3 A E AS = 25 C 2 J P D = 25 C 54 W -55 to + C M + C T stg -55 to + C T L 1.mm (.3in) from case for 1s 3 C T SOLD Plastic body for 1s 2 C M d Mounting torque (TO-7&TO-3P) 1.13/1 Nm/lb.in. Weight TO-7. g TO-3P 5.5 g TO-28 4. g Symbol Test Conditions Characteristic Values ( = 25 C, unless otherwise specified) Min. Typ. Max. BS = V = 1mA V (th) = = 25μA 2.5 4.5 V I SS = ±2V, = V ±1 na I DSS = S 5 μa = V = 5 C 3 μa R DS(on) = 1V =.5 I D25, Note 1 mω TO-3P D S TO-28 = ate D = Drain S = Source TAB = Drain Features Designed for linear operation International standard packages Avalanche rated Molding epoxies meet UL 94 V- flammability classification uaranteed FBSOA at 75 C Applications Solid state circuit breakers Soft start controls Linear amplifiers Programmable loads Current regulators S 29 IXYS CORPORATION, All rights reserved DS111(1/9)
Symbol Test Conditions Characteristic Values ( = 25 C, unless otherwise specified) Min. Typ. Max. g fs = 1V =.5 I D25, Note 1 1 14 S C iss 1.7 nf C oss = V, = 25V, f = 1MHz pf C rss 13 pf t d(on) Resistive Switching Times 43 ns t r V 5 ns S = 1V, =.5 S =.5 I D25 t d(off) R 3 ns = 2Ω (External) t f 43 ns Q g(on) 335 nc Q gs = 1V, =.5 S =.5 I D25 58 nc Q gd 2 nc R thjc.23 C/W R thcs (TO-7&TO-3P).25 C/W Safe Operating Area Specification Symbol Test Conditions Min. Typ. Max. SOA = 4 =.A, = 75 C, tp = 3s 288 W Source-Drain Diode Characteristic Values ( = 25 C, unless otherwise specified) Symbol Test Conditions Min. Typ. Max. I S = V 3 A I SM Repetitive, pulse width limited by M A V SD I F = I S, = V, Note 1 1.5 V t rr I F = I S, -di/dt = 1A/μs, V R = 1V 71 ns IXTH3NL2 IXTQ3NL2 IXTT3NL2 TO-7 (IXTH) Outline 1 2 3 e Terminals: 1 - ate 2 - Drain 3 - Source Tab - Drain Dim. Millimeter Inches Min. Max. Min. Max. A 4.7 5.3.5.29 A 1 2.2 2.54.87. A 2 2.2 2..59.98 b 1. 1.4.4.55 b 1 1.5 2.13.5.84 b 2 2.87 3..113.3 C.4.8.1.31 D 2.8 21.4.819.845 E.75 1.2.1.4 e 5.2 5.72.25.225 L 19.81 2.32.78.8 L1 4.5.177 P 3.55 3.5.14.144 Q 5.89.4.232.252 R 4.32 5.49.17.21 S. BSC 2 BSC TO-3P (IXTQ) Outline P Note 1: Pulse test, t 3μs; duty cycle, d 2%. TO-28 (IXTT) Outline PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IBTs are covered 4,835,592 4,931,844 5,49,91 5,237,481,,5,44,5 B1,83,344,727,585 7,5,734 B2 7,7,338B2 by one or more of the following U.S. patents: 4,85,72 5,17,58 5,3,37 5,381,25,259,3 B1,534,343,71,45 B2,759,92 7,3,975 B2 4,881,1 5,34,79 5,7,117 5,48,7,3,728 B1,583,55,71,43,771,478 B2 7,71,537
IXTH3NL2 IXTQ3NL2 IXTT3NL2 3 27 21 9 Fig. 1. Output Characteristics @ 25ºC = 2V 14V V 1V 3 5V 1 2 3 4 5 V 8 7 5 4 3 Fig. 2. Extended Output Characteristics @ 25ºC = 2V 14V V 1V 2 1 V 5 1 2 25 3 3 27 21 9 3 Fig. 3. Output Characteristics @ 5ºC = 2V V 1V 1 2 3 4 5 7 8 9 1 11 13 V 5V RDS(on) - Normalized 2.8 2. 2.4 2.2 2. 1.8 1. 1.4 1.2 1..8. Fig. 4. R DS(on) Normalized to I D = A Value vs. Junction Temperature = 1V I D = 3A.4-5 -25 25 5 75 1 5 - Degrees Centigrade I D = A Fig. 5. R DS(on) Normalized to I D = A Value vs. Drain Current Fig.. Maximum Drain Current vs. Case Temperature 3. 35 2.8 2. = 1V = 5ºC 3 RDS(on) - Normalized 2.4 2.2 2. 1.8 1. 1.4 1.2 1. = 25ºC 25 2 1 5.8 1 2 3 4 5 7 8 I D - Amperes -5-25 25 5 75 1 5 - Degrees Centigrade 29 IXYS CORPORATION, All rights reserved IXYS REF: T_3NL2(8R)1-2-9-A
IXTH3NL2 IXTQ3NL2 IXTT3NL2 Fig. 7. Input Admittance Fig. 8. Transconductance 4 35 3 25 2 = 5ºC 25ºC - 4ºC g f s - Siemens 28 2 22 2 1 14 1 = - 4ºC 25ºC 5ºC 1 8 5 3.5 4. 4.5 5. 5.5..5 7. 7.5 8. 8.5 9. - Volts 4 2 5 1 2 25 3 35 4 45 I D - Amperes 9 8 7 Fig. 9. Forward Voltage Drop of Intrinsic Diode 1 14 = 3V I D = A I = 1mA Fig. 1. ate Charge IS - Amperes 5 4 3 = 5ºC VS - Volts 1 8 2 = 25ºC 4 1 2.4.5..7.8.9 1. V SD - Volts 4 8 1 2 28 32 3 4 44 48 Q - NanoCoulombs Fig. 11. Capacitance Fig.. Maximum Transient Thermal Impedance 1, 1. f = 1 MHz Capacitance - PicoFarads 1, 1, C iss C oss Z(th)JC - ºC / W.1.1 C rss 1 5 1 2 25 3 35 4.1.1.1.1.1.1 1 1 Pulse Width - Seconds IXYS reserves the right to change limits, test conditions, and dimensions.
IXTH3NL2 IXTQ3NL2 IXTT3NL2 Fig. 13. Forward-Bias Safe Operating Area @ = 25ºC Fig. 14. Forward-Bias Safe Operating Area @ = 75ºC 1. R DS(on) Limit 1. R DS(on) Limit 25µs 1µs 25µs 1. 1. 1µs 1. 1ms 1ms 1ms 1. 1ms 1ms = ºC DC = ºC DC 1ms = 25ºC Single Pulse = 75ºC Single Pulse.1 1 1 1.1 1 1 1 29 IXYS CORPORATION, All rights reserved IXYS REF: T_3NL2(8R)1-2-9-A