N-Channel V (-S) MOSFET SiB45K PROUCT SUMMARY V S (V) R S(on) ( ) MAX. I (A) a Q g (Typ.).85 at V GS = V.3.3 at V GS = 4.5 V 4.9 PowerPAK SC-75-L-Single 5. mm S 4 S 2 3 G. mm Ordering Information: SiB45K-T-GE3 (Lead (Pb)-free and Halogen-free).8 nc FEATRUES TrenchFET Power MOSFET New Thermally Enhanced PowerPAK SC-75 Package - Small Footprint Area - Low On-Resistance % R g and UIS Tested Material categorization: For definitions of compliance please see www.vishay.com/doc?9992 APPLICATIONS C/C Converters Full-Bridge Converters For Power Bricks and POL Power Part # code Marking Code A J X X X X Lot Traceability and ate code G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (T A = 25 C, unless otherwise noted) Parameter Symbol Limit Unit rain-source Voltage V S V Gate-Source Voltage V GS ± 2 T C = 25 C.3 T C = 7 C 5 Continuous rain Current (T J = 5 C) I T A = 25 C 2.7 b, c T A = 7 C 2.2 b, c A Pulsed rain Current (t = 3 μs) I M 7 T C = 25 C.3 Continuous Source-rain iode Current I S T A = 25 C 2 b, c Single Pulse Avalanche Current I AS 2.4 L =. mh Single Pulse Avalanche Energy E AS.29 mj T C = 25 C 3 T C = 7 C 8.4 Maximum Power issipation P W T A = 25 C 2.4 b, c T A = 7 C. b, c Operating Junction and Storage Temperature Range - 55 to 5 T J, T stg C Soldering Recommendations (Peak Temperature) d, e 2 THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambient b, f t 5 s R thja 4 5 Maximum Junction-to-Case (rain) Steady State R thjc 7.5 9.5 C/W Notes a. T C = 25 C. b. Surface mounted on " x " FR4 board. c. t = 5 s. d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SC-75 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under steady state conditions is 5 C/W. S2-33-Rev. A, 2-May-2 ocument Number: 275 THIS OCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PROUCTS ESCRIBE HEREIN AN THIS OCUMENT ARE SUBJECT TO SPECIFIC ISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
SiB45K SPECIFICATIONS (T J = 25 C, unless otherwise noted) Parameter Symbol Test Conditions Min. Typ. Max. Unit Static rain-source Breakdown Voltage V S V GS = V, I = 25 μa V V S Temperature Coefficient V S /T J 54 I = 25 μa V GS(th) Temperature Coefficient V GS(th) /T J - 4. mv/ C Gate-Source Threshold Voltage V GS(th) V S = V GS, I = 25 μa. 3 V Gate-Source Leakage I GSS V S = V, V GS = ± 2 V ± na V S = V, V GS = V Zero Gate Voltage rain Current I SS V S = V, V GS = V, T J = 55 C μa On-State rain Current a I (on) V S 5 V, V GS = V A rain-source On-State Resistance a V GS = V, I =.9 A.53.85 R S(on) V GS = 4.5 V, I =.5 A.22.3 Forward Transconductance a g fs V S = V, I =.9 A 3.7 S ynamic b Input Capacitance C iss 3 Output Capacitance C oss V S = 5 V, V GS = V, f = MHz 54 pf Reverse Transfer Capacitance C rss V S = 5 V, V GS = V, I = 2.7 A 3.3 5 Total Gate Charge Q g.8 2.7 nc Gate-Source Charge Q gs V S = 5 V, V GS = 4.5 V, I = 2.7 A.7 Gate-rain Charge Q gd Gate Resistance R g f = MHz.3.5 3 Turn-On elay Time t d(on) 5 3 Rise Time t r V = 5 V, R L = 23 45 9 Turn-Off elay Time t d(off) I 2.2 A, V GEN = 4.5 V, R g = 2 Fall Time t f 3 25 Turn-On elay Time t d(on) 5 ns Rise Time t r V = 5 V, R L = 23 2 Turn-Off elay Time t d(off) I 2.2 A, V GEN = V, R g = 2 Fall Time t f 2 rain-source Body iode Characteristics Continuous Source-rain iode Current I S T C = 25 C.3 Pulse iode Forward Current I SM 7 A Body iode Voltage V S I S = 2.2 A, V GS = V.9.2 V Body iode Reverse Recovery Time t rr 25 5 ns Body iode Reverse Recovery Charge Q rr 2 4 nc I F = 2.2 A, di/dt = A/μs, T J = 25 C Reverse Recovery Fall Time t a 8 ns Reverse Recovery Rise Time t b 7 Notes a. Pulse test; pulse width 3 μs, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S2-33-Rev. A, 2-May-2 2 ocument Number: 275 THIS OCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PROUCTS ESCRIBE HEREIN AN THIS OCUMENT ARE SUBJECT TO SPECIFIC ISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
SiB45K TYPICAL CHARACTERISTICS (25 C, unless otherwise noted) 2. 5 V GS = V thru 5 V. I - rain Current (A) 4 3 2 V GS = 4 V I - rain Current (A).2.8 T C = 25 C V GS = 3 V..5..5 2. 2.5 3. V S - rain-to-source Voltage (V) Output Characteristics.4 T C = 25 C T C = - 55 C... 2. 3. 4. 5. V GS - Gate-to-Source Voltage (V) Transfer Characteristics.5 2 R S(on) - On-Resistance (Ω).4.3.2. V GS = 4.5 V V GS = V C - Capacitance (pf) 2 8 4 C rss C iss C oss. 2 3 4 5 4 8 2 2 I - rain Current (A) V S - rain-to-source Voltage (V) On-Resistance vs. rain Current and Gate Voltage Capacitance.8 V GS - Gate-to-Source Voltage (V) 8 4 2 V S = 5 V I = 2.7 A V S = 25 V V S = 8 V R S(on) - On-Resistance (Normalized)..4.2..8 I =.9 A V GS = V V GS = 4.5 V 2 3 4 Q g - Total Gate Charge (nc) Gate Charge. - 5-25 25 5 75 25 5 T J - Junction Temperature ( C) On-Resistance vs. Junction Temperature S2-33-Rev. A, 2-May-2 3 ocument Number: 275 THIS OCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PROUCTS ESCRIBE HEREIN AN THIS OCUMENT ARE SUBJECT TO SPECIFIC ISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
SiB45K TYPICAL CHARACTERISTICS (25 C, unless otherwise noted)..5 I =.9 A I S - Source Current (A) T J = 5 C T J = 25 C R S(on) - On-Resistance (Ω).4.3.2. T J = 25 C T J = 25 C...2.4..8..2.4 V S - Source-to-rain Voltage (V) Soure-rain iode Forward Voltage. 2 4 8 V GS - Gate-to-Source Voltage (V) On-Resistance vs. Gate-to-Source Voltage 2.8 2 2. 5 V GS(th) (V) 2.4 2.2 I = 25 μa Power (W) 2. 5.8-5 - 25 25 5 75 25 5 T J - Temperature ( C) Threshold Voltage... Pulse (s) Single Pulse Power, Junction-to-Ambient Limited by R S(on) * I - rain Current (A).. T A = 25 C μs ms ms ms s s C BVSS Limited.. V S - rain-to-source Voltage (V) * V GS > minimum V GS at which R S(on) is specified Safe Operating Area, Junction-to-Ambient S2-33-Rev. A, 2-May-2 4 ocument Number: 275 THIS OCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PROUCTS ESCRIBE HEREIN AN THIS OCUMENT ARE SUBJECT TO SPECIFIC ISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
SiB45K TYPICAL CHARACTERISTICS (25 C, unless otherwise noted) 8 5 2 I - rain Current (A) 4 2 Power (W) 9 3 25 5 75 25 5 T A - Ambient Temperature ( C) 25 5 75 25 5 T C - Case Temperature ( C) Current erating* Power erating * The power dissipation P is based on T J(max.) = 5 C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. S2-33-Rev. A, 2-May-2 5 ocument Number: 275 THIS OCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PROUCTS ESCRIBE HEREIN AN THIS OCUMENT ARE SUBJECT TO SPECIFIC ISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
SiB45K TYPICAL CHARACTERISTICS (25 C, unless otherwise noted) uty Cycle =.5 Normalized Effective Transient Thermal Impedance..2..5.2 Single Pulse. -4-3 -2 - Square Wave Pulse uration (s) Notes: Normalized Thermal Transient Impedance, Junction-to-Ambient P M t t 2 t. uty Cycle, = t 2 2. Per Unit Base = R thja = 5 C/W 3. T JM - T A = P M Z (t) thja 4. Surface Mounted uty Cycle =.5 Normalized Effective Transient Thermal Impedance.2..5.2 Single Pulse. -4-3 -2 - Square Wave Pulse uration (s) Normalized Thermal Transient Impedance, Junction-to-Case maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?275. S2-33-Rev. A, 2-May-2 ocument Number: 275 THIS OCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PROUCTS ESCRIBE HEREIN AN THIS OCUMENT ARE SUBJECT TO SPECIFIC ISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
Package Information PowerPAK SC75-L e b e b PIN PIN2 PIN3 PIN PIN2 PIN3 E 2 K E3 E2 K4 L K E K PIN PIN5 PIN4 PIN PIN5 PIN4 K3 K K2 K2 K K2 BACKSIE VIEW OF SINGLE BACKSIE VIEW OF UAL A Notes:. All dimensions are in millimeters 2. Package outline exclusive of mold flash and metal burr 3. Package outline inclusive of plating E L E A C z Z ETAIL Z SINGLE PA UAL PA IM MILLIMETERS INCHES MILLIMETERS INCHES Min Nom Max Min Nom Max Min Nom Max Min Nom Max A.75.75.8.27.3.32.75.75.8.27.3.32 A -.5 -.2 -.5 -.2 b.8.25.33.7..3.8.25.33.7..3 C.5.2.25..8..5.2.25..8..53..7..3.7.53..7..3.7.57.7.77.22.2.3.34.44.54.3.7.2 2..2.3.4.8.2 E.53..7..3.7.53..7..3.7 E...2.39.43.47.5..7.2.24.28 E2.2.25.3.8..2 E3.32.37.42.3.5.7 e.5 BSC.2 BSC.5 BSC.2 BSC K.8 TYP.7 TYP.245 TYP. TYP K.275 TYP. TYP.32 TYP.3 TYP K2.2 TYP.8 TYP.2 BSC.8 TYP K3.255 TYP. TYP K4.3 TYP.2 TYP L.5.25.35...4.5.25.35...4 T.3.8.3..3.5 ECN: C-743 Rev. C, -Aug-7 WG: 5935 ocument Number: 73 -Aug-7 www.vishay.com
Application Note 82 RECOMMENE PA LAYOUT FOR PowerPAK SC75-L Single.25 (.49).25 (.).25 (.).5 (.2).4 (.).3 (.2).8 (.7).37 (.5).7 (.7). (.43).2 (.24) 2. (.79).2 (.8).3 (.2).3 (.2).545 (.2).7 (.2) 2. (.79).25 (.) imensions in mm/(inches) Return to Index APPLICATION NOTE ocument Number: 7488 www.vishay.com Revision: 2-Jan-8 3
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