V XPT TM IGBTs GenX3 TM Extreme Light Punch Through IGBT for 5-3 khz Switching Preliminary Technical Information IXYKNB3 IXYXNB3 S = V 11 = A (sat).v t fi(typ) = ns TO- (IXYK) Symbol Test Conditions Maximum Ratings S = 5 C to 15 C V V CGR = 5 C to 15 C, R GE = 1MΩ V V GES Continuous ± V V GEM Transient ±3 V 5 = 5 C (Chip Capability) 5 A I LRMS Terminal Current Limit 1 A 11 = 11 C A M = 5 C, 1ms 53 A I A = 5 C 5 A E AS = 5 C 1. J SSOA V GE = 15V, T VJ = 15 C, R G = 1Ω M = A (RBSOA) Clamped Inductive Load @ S P C = 5 C 115 W -55... +15 C M 15 C T stg -55... +15 C T L Maximum Lead Temperature for Soldering 3 C T SOLD 1. mm (.in.) from Case for 1s C M d Mounting Torque (TO-) 1.13/1 Nm/lb.in. F C Mounting Force (PLUS).. /.5.. N/lb. Weight TO- 1 g PLUS g Symbol Test Conditions Characteristic Values ( = 5 C, Unless Otherwise Specified) Min. Typ. Max. BS = 5μA = V V V GE(th) = 5μA, = V GE 3. 5. V ES = S, V = V 5 μa GE = 15 C 1 ma I GES = V = ±V ± na (sat) = 11 = 15V, Note 1.. V = 15 C. V G C E PLUS (IXYX) G G C E Tab Tab G = Gate E = Emitter C = Collector Tab = Collector Features Optimized for 5-3kHZ Switching Square RBSOA Positive Thermal Coefficient of Vce(sat) Avalanche Rated International Standard Packages Advantages High Power Density Low Gate Drive Requirement Applications Power Inverters UPS Motor Drives SMPS PFC Circuits Battery Chargers Welding Machines Lamp Ballasts 13 IXYS CORPORATION, All Rights Reserved DS519A(3/13)
Symbol Test Conditions Characteristic Values ( = 5 C Unless Otherwise Specified) Min. Typ. Max. g fs = A, = 1V, Note 1 3 5 S C ies pf C oes = 5V = V, f = 1MHz 3 pf C res pf Q g(on) 5 nc Q ge = 11 = 15V, =.5 S nc Q gc 9 nc 3 ns t ri Inductive load, = 5 C 9 ns = 11 = 15V. mj t d(off) =.5 S, R G = 1Ω 153 ns t fi Note ns E off.1 11.5 mj 9 ns t ri Inductive load, = 15 C 9 ns = 11 = 15V 11. mj t d(off) =.5 S, R G = 1Ω 19 ns t fi Note ns E off 1.1 mj R thjc.13 C/W R thcs.15 C/W TO- Outline IXYKNB3 IXYXNB3 Terminals: 1 = Gate, = Collector 3 = Emitter PLUS TM Outline Notes: 1. Pulse test, t 3μs, duty cycle, d %.. Switching times & energy losses may increase for higher (clamp), or R G. Terminals: 1 - Gate - Collector 3 - Emitter PRELIMANARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. Dim. Millimeter Inches Min. Max. Min. Max. A.3 5.1.19.5 A 1.9.5.9. A 1.91.1.5.5 b 1.1 1..5.55 b 1 1.91.13.5. b.9 3..115.3 C.1...31 D. 1.3.19. E 15.5 1.13..35 e 5.5 BSC.15 BSC L 19.1.3.. L1 3.1.3.15.1 Q 5.59... R.3.3.1.19 IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered,35,59,931, 5,9,91 5,3,1,,5,,5 B1,3,3,,55,5,3 B,15,33B by one or more of the following U.S. patents:,, 5,1,5 5,3,3 5,31,5,59,3 B1,53,33,1,5 B,59,9,3,95 B,1,1 5,3,9 5,1,11 5,,15,3, B1,53,55,1,3,1, B,1,53
IXYKNB3 IXYXNB3 Fig. 1. Output Characteristics @ = 5ºC Fig.. Extended Output Characteristics @ = 5ºC 1 1 1 13V V 11V 1V 9V V 3 5 15 13V V 11V 1V 9V V V.5 1 1.5.5 3 3.5.5 V 5 V V 1 1 1 1 1 1 1 Fig. 3. Output Characteristics @ = 15ºC 13V V 11V 1V 9V V V VCE(sat) - Normalized.. 1. 1. 1. 1. 1. Fig.. Dependence of (sat) on = A = A V.. = 5A 5V 1 3 5. -5-5 5 5 5 5 15 15 - Degrees Centigrade Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage Fig.. Input Admittance = 5ºC 1 1 VCE - Volts 5 = A 3 A 5A 1 9 1 11 13 1 15 V GE - Volts 1 = 15ºC 5ºC 3.5.5 5.5.5.5.5 9.5 V GE - Volts - ºC 13 IXYS CORPORATION, All Rights Reserved
IXYKNB3 IXYXNB3 Fig.. Transconductance Fig.. Gate Charge g f s - Siemens 9 5 3 = - ºC 5ºC 15ºC VGE - Volts 1 1 1 = V = A I G = 1mA 1 1 1 1 - Amperes 1 1 1 Q G - NanoCoulombs 1, Fig. 9. Capacitance Fig. 1. Reverse-Bias Safe Operating Area C ies Capacitance - PicoFarads 1, f = 1 MHz C oes C res 1 = 15ºC R G = 1Ω dv / dt < 1V / ns 1 5 1 15 5 3 35 1 3 5 9 1 13.3 Fig. 11. Maximum Transient Thermal Impedance aaaaaa.1 Z(th)JC - ºC / W.1.1.1.1.1.1.1 1 1 Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYKNB3 IXYXNB3 13 11 Fig.. Inductive Switching Energy Loss vs. Gate Resistance E off - - - - = 15ºC = 15V = V 1 1 1 11 1 Fig. 13. Inductive Switching Energy Loss vs. Collector Current E off - - - - = V = 15ºC 1 1 Eoff - MilliJoules 1 9 = A 1 - MilliJoules Eoff - MilliJoules 9 1 - MilliJoules = 5A = 5ºC 5 1 3 5 9 1 R G - Ohms 5 55 5 5 5 9 95 - Amperes Eoff - MilliJoules 11 1 9 Fig. 1. Inductive Switching Energy Loss vs. E off - - - - = V = A = 5A 1 1 1 - MilliJoules t f i 5 3 Fig. 15. Inductive Turn-off Switching Times vs. Gate Resistance t f i t d(off) - - - - = 15ºC = 15V = V = 5A = A 55 5 5 35 3 5 t d(off) 5 5 5 5 5 15 - Degrees Centigrade 15 1 3 5 9 1 R G - Ohms Fig. 1. Inductive Turn-off Switching Times vs. Collector Current 9 Fig. 1. Inductive Turn-off Switching Times vs. 3 t f i 55 5 5 35 3 5 = 5ºC = 15ºC t f i t d(off) - - - - = V 5 3 1 19 1 15 t d(off) t f i 5 3 t f i t d(off) - - - - = V = 5A = A 3 1 1 t d(off) 13 5 55 5 5 5 9 95 - Amperes 5 5 5 5 15 - Degrees Centigrade 13 IXYS CORPORATION, All Rights Reserved
IXYKNB3 IXYXNB3 1 Fig. 1. Inductive Turn-on Switching Times vs. Gate Resistance 55 1 Fig. 19. Inductive Turn-on Switching Times vs. Collector Current 3 t r i 1 t r i - - - - = 15ºC = 15V = V = A = 5A 5 5 35 3 t r i t r i - - - - = V = 15ºC, 5ºC 3 3 5 1 3 5 9 1 R G - Ohms 5 55 5 5 5 9 95 - Amperes t r i 1 1 Fig.. Inductive Turn-on Switching Times vs. t r i - - - - = V = A = 5A 3 31 3 9 5 5 5 5 5 15 - Degrees Centigrade IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: IXY_NB3(9T)-13-