hyristor Module RRM = 2x 16 A = 181A = 1.3 Phase leg Part number MCC162-16io1 Backside: isolated 3 1 2 6 7 5 4 Features / Advantages: Applications: Package: Y4 hyristor for line frequency Planar passivated chip Long-term stability Direct Copper Bonded Al2O3-ceramic Line rectifying 5/6 Hz Softstart AC motor control Motor control Power converter AC power control Lighting and temperature control solation oltage: 36 ~ ndustry standard outline RoHS compliant Soldering pins for PCB mounting Base plate: B ceramic Reduced weight Advanced power cycling
hyristor Symbol Definition = 16 = 25 C J = 125 C Ratings min. typ. max. 17 forward voltage drop = 15 A = 25 C 1.9 A (RMS) = = = Conditions 3 A 15 A 3 A C = 85 C 18 sine = 25 C J = 25 C J threshold voltage J = 125 C.88 for power loss calculation only r slope resistance 1.15 mω R thermal resistance junction to case.155 K/W thjc P tot total power dissipation C = 25 C 645 W SM max. forward surge current t = 1 ms; (5 Hz), sine J = 45 C 6. ka t = 8,3 ms; (6 Hz), sine R = 6.48 ka t = 1 ms; (5 Hz), sine J = 125 C 5.1 ka t = 8,3 ms; (6 Hz), sine R = 5.51 ka ²t value for fusing t = 1 ms; (5 Hz), sine J = 45 C 18. ka²s t = 8,3 ms; (6 Hz), sine R = 174.7 ka²s t = 1 ms; (5 Hz), sine J = 125 C 13.1 ka²s t = 8,3 ms; (6 Hz), sine = 126.3 ka²s P GM RSM/DSM RRM/DRM R/D P GA average forward current RMS forward current J J = 125 C C J junction capacitance = 4 f = 1 MHz = 25 C 273 max. gate power dissipation t P = 3 µs C = 125 C 12 t = 5 µs 6 average gate power dissipation P J J = 125 C R 16 3 1 1.25 1.3 1.25 181 3 8 Unit R J pf (di/dt) cr critical rate of rise of current J = 125 C; f = 5 Hz repetitive, = 54 A t P = 2 µs; di G /dt =.5A/µs; G =.5A; D = ⅔ DRM non-repet., = 18 A (dv/dt) critical rate of rise of voltage = ⅔ =125 C cr max. non-repetitive reverse/forward blocking voltage max. repetitive reverse/forward blocking voltage reverse current, drain current = 16 R R/D R/D R thch thermal resistance case to heatsink.7 D GK = ; method 1 (linear voltage rise) G gate trigger voltage D = 6 J = 25 C J = -4 C DRM J 15 5 1 µa ma A A W W W A/µs A/µs /µs 2.5 2.6 G gate trigger current D = 6 J = 25 C 15 ma J = -4 C 2 ma GD gate non-trigger voltage D = ⅔ DRM J = 125 C.2 GD gate non-trigger current 1 ma L latching current t p = 3µs J = 25 C 3 ma G =.5A; di G /dt =.5A/µs H holding current D = 6 R GK = J = 25 C 2 ma t gd gate controlled delay time D = ½ DRM J = 25 C 2 µs G =.5A; di G /dt =.5A/µs t q turn-off time R = 1 ; = 3 A; D = ⅔ DRM J = 125 C 15 µs di/dt = 1 A/µs; dv/dt = 2/µs; t p = 2 µs K/W
Package Y4 Ratings Symbol Definition Conditions min. typ. max. Unit RMS RMS current per terminal 3 A J virtual junction temperature -4 125 C op operation temperature -4 1 C stg storage temperature -4 125 C Weight M D M d Spp/App d Spb/Apb SOL mounting torque 2.25 terminal torque 4.5 creepage distance on surface striking distance through air isolation voltage t = 1 second t = 1 minute terminal to terminal terminal to backside 5/6 Hz, RMS; SOL 1 ma 14. 1. 16. 16. 36 3 15 2.75 5.5 g Nm Nm mm mm Assembly Line Date Code Part No. Circuit Diagram yywwa YYYYYYYYYYY 2D Matrix Ordering Standard Part Number Marking on Product Delivery Mode Quantity Code No. MCC162-16io1 MCC162-16io1 Box 6 429619 Equivalent Circuits for Simulation * on die level J = 125 C hyristor R max threshold voltage.88 R max slope resistance *.8 mω
Outlines Y4 M6 x 16 2.8 /.8 2.2.25 3 1 2 3 65 5 29 Ø 6.6 11 1 94 8 7 5 1 2 3 6 7 15 12.4 23.2 34 8 9 63 4 17 4 5 Optional accessories for modules Keyed gate/cathode twin plugs with wire length = 35 mm, gate = white, cathode = red ype ZY 18L (L = Left for pin pair 4/5) UL 758, style 3751 ype ZY 18R (R = Right for pin pair 6/7) 3 1 2 6 7 5 4
hyristor 5 1 6 32 4 SM 3 2 5 Hz 8% RRM J = 45 C J =125 C 2 dt 1 5 [A 2 s] J = 45 C J =125 C 28 24 2 AM 16 12 18 sin 12 6 3 1 8 4.1.1.1 1 t [s] Fig. 1 Surge overload current SM, FSM : Crest value, t: duration 1 4 1 t [ms] 1 Fig. 2 2 t versus time (1-1 ms) 25 5 75 1 125 15 C [ C] Fig. 3 Max. forward current at case temperature P tot [W] 4 36 32 28 24 2 16 12 8 4 18 sin 12 6 3 R thka K/W.3.4.5.6.8 1. 1.4 1.8 G [] 1 1 1 t p = 3 µs t p = 5 µs P GM =12W 6 W P GA = 8 W 125 C 25 C G ( J =-4 C) G ( J = C) G ( J =25 C) 5 1 15 2 25 AM 25 5 75 1 125 15 a [ C] GD.1.1.1 1 1 G Fig. 4 Power dissipation vs. on-state current & ambient temperature (perthyristorordiode) Fig. 5 Gate trigger characteristics 14 12 1 P tot 8 [W] 6 4 Circuit B6 3xMCC162 or 3x MCD162 R thka K/W.3.4.6.8.1.15.2.3 1 1 t gd [μs] 1 J = 25 C limit typ. 2 1 2 3 4 5 25 5 75 1 125 15 dam a [ C] Fig. 6 hree phase rectifier bridge: Power dissipation versus direct output current and ambient temperature.1.1.1 1 1 G Fig. 7 Gate trigger delay time
hyristor P tot 16 12 8 Circuit W3 3xMCC162 or 3xMCD162 R thka K/W.3.4.6.8.1.15.2.3 [W] 4 1 2 3 4 RMS 25 5 75 1 125 15 a [ C] Fig. 8 hree phase AC-controller: Power dissipation versus RMS output current and ambient temperature.24 R thjc for various conduction angles d: Z thjc [K/W].16.8 3 6 12 18. 1-3 1-2 1-1 1 1 1 1 2 t [s] Fig. 9 ransient thermal impedance junction to case (per thyristor/diode) d R thjc [K/W].155 18.167 12.176 6.197 3.227 Constants for Z thjc calculation: i R thi [K/W] t i [s] 1.72.1 2.188.8 3.129.2 Z thjk.3.2 [K/W].1. 1-3 1-2 1-1 1 1 1 1 2 t [s] 3 6 12 18 Fig. 1 ransient thermal impedance junction to heatsink (per thyristor/diode) R thjk for various conduction angles d: d R thjk [K/W].225 18.237 12.246 6.267 3.297 Constants for Z thjk calculation: i R thi [K/W] t i [s] 1.72.1 2.188.8 3.129.2 4.7 1.