KHB2D0N60P/F/F2 N CHANNEL MOS FIELD EFFECT TRANSISTOR SEMICONDUCTOR TECHNICAL DATA. General Description

Similar documents
KHB9D5N20P1/F1/F2 N CHANNEL MOS FIELD EFFECT TRANSISTOR SEMICONDUCTOR TECHNICAL DATA. General Description

KF12N60P/F N CHANNEL MOS FIELD EFFECT TRANSISTOR SEMICONDUCTOR TECHNICAL DATA. General Description

KF80N08P/F N CHANNEL MOS FIELD EFFECT TRANSISTOR SEMICONDUCTOR TECHNICAL DATA. General Description TO-220IS (1)

KF5N50PR/FR/PS/FS N CHANNEL MOS FIELD EFFECT TRANSISTOR SEMICONDUCTOR TECHNICAL DATA. General Description

V DSS R DS(on) max I D. 100V GS = 10V 7.3A. 58 P A = 25 C Maximum Power Dissipation 2.5 Linear Derating Factor

DACO SEMICONDUCTOR CO., LTD.

V DSS R DS(on) max I D. 100V GS = 10V 7.3A. 58 P A = 25 C Maximum Power Dissipation 2.5 Linear Derating Factor

Product Summary: BVDSS RDSON (MAX.) D 60V 60mΩ 12A I D. UIS, Rg 100% Tested Pb Free Lead Plating & Halogen Free EMB60N06CS

30V GS = 10V 6.2nC

V DSS R DS(on) max Qg. 30V GS = 10V 30nC. 170 P A = 25 C Power Dissipation 2.5 P A = 70 C Power Dissipation Linear Derating Factor

V DSS R DS(on) max Qg. 30V GS = 10V 30nC. Thermal Resistance Parameter Typ. Max. Units Junction-to-Drain Lead g 20 Junction-to-Ambient f

SMPS MOSFET. V DSS R DS(on) max(mw) I D

SMPS MOSFET. Storage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case )

TSP10N60M / TSF10N60M

500V N-Channel MOSFET

MOSFET IRF7855 (KRF7855)

GP1M003A080H/ GP1M003A080F GP1M003A080HH/ GP1M003A080FH

SMPS MOSFET. V DSS R DS(on) max (mω)

N-C hannel E nhancement Mode Field E ffect Transistor. T O-251(l-P AK ) (T A=25 C unles s otherwis e noted) 25 C 70 C IDM P D.

Features. Symbol Parameter Rating Units V DS Drain-Source Voltage 40 V V GS Gate-Source Voltage ±20 V

SMPS MOSFET. V DSS R DS(on) max(mw) I D

N-Channel 20 V (D-S) MOSFET

V DSS R DS(on) max I D 80V GS = 10V 3.6A. 29 P A = 25 C Maximum Power Dissipation 2.0 Linear Derating Factor

Maximum Ratings Parameter Symbol Value Unit Continuous drain current T C = 25 C T C = 100 C

APQ02SN60AA-XXJ0 APQ02SN60AB DEVICE SPECIFICATION. 600V/2A N-Channel MOSFET

SMPS MOSFET. V DSS R DS(on) max (mw) I D

Current Sensing MOSFET, N-Channel 30-V (D-S)

Features 3.3 A, 20 V. V F < A (T J = 125 o C). V F < A. V F < A. TA=25 o C unless otherwise noted

Complementary MOSFET Half-Bridge (N- and P-Channel)

DACO SEMICONDUCTOR CO., LTD.

DMC3016LDV. Product Summary. Features ADVANCED INFORMATION. Mechanical Data. Description. Applications. Ordering Information (Note 4)

Features. Symbol Parameter Rating Units V DS Drain-Source Voltage 600 V V GS Gate-Source Voltage ±30 V

CEP190N10/CEB190N10. N-Channel Enhancement Mode Field Effect Transistor FEATURES. Applications

CEP300N10/CEB300N10. N-Channel Enhancement Mode Field Effect Transistor FEATURES. Applications

IRGB4055PbF IRGS4055PbF

IRF7322D1 FETKY ä MOSFET / Schottky Diode

FDS4435BZ P-Channel PowerTrench MOSFET -30V, -8.8A, 20m

IRLMS2002. HEXFET Power MOSFET V DSS = 20V. R DS(on) = 0.030Ω

SSF65R580F. Main Product Characteristics 700V. V J max. 0.52Ω (typ.) I D 8.0A TO-220F. Features and Benefits. Description

N-Channel 30-V (D-S) MOSFET with Schottky Diode

N-Channel Logic Level Enhancement Mode Field Effect Transistor

SMPS MOSFET. V DSS R DS(on) max I D

V T j,max I DM. 100% UIS Tested 100% R g Tested TO251A IPAK AOI11S60

N-Channel 30-V (D-S) MOSFET With Sense Terminal

IRLML6346TRPbF HEXFET Power MOSFET

Product Summary: BVDSS RDSON (MAX.) D 60V 60mΩ 12A I D. UIS, Rg 100% Tested Pb Free Lead Plating & Halogen Free EMB60N06C

Features V F < A (T J = 125 C) V F < A V F < A. TA=25 o C unless otherwise noted

P-Channel 30-V (D-S) MOSFET

FDC3535. P-Channel Power Trench MOSFET -80 V, -2.1 A, 183 mω. FDC3535 P-Channel Power Trench MOSFET

IRGPC50F Fast Speed IGBT

Si4410DY. HEXFET Power MOSFET V DSS = 30V. R DS(on) = Ω. N-Channel MOSFET Low On-Resistance Low Gate Charge Surface Mount Logic Level Drive

Si4410DYPbF. HEXFET Power MOSFET V DSS = 30V. R DS(on) = Ω

STS3401. P -C hannel E nhancement Mode MOS FE T. ABS OLUTE MAXIMUM R ATINGS (T A=25 C unless otherwise noted) THE R MAL C HAR AC TE R IS TIC S

V DS I D (at V GS =10V) R DS(ON) (at V GS =10V) R DS(ON) (at V GS = 4.5V) 100% UIS Tested 100% R g Tested. Symbol

P-Channel Enhancement Mode Field Effect Transistor PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS

P-CHANNEL MOSFET. Top View

Symbol Parameter Max. 100 P = 25 C Power Dissipation V GS Gate-to-Source Voltage ± 12. V/ns T J C T STG

AOD452 N-Channel Enhancement Mode Field Effect Transistor

AO4620 Complementary Enhancement Mode Field Effect Transistor

IXFH42N65X2A V DSS = 650V I D25. X2-Class HiPerFET TM Power MOSFET. = 42A 72m. Advance Technical Information. R DS(on) AEC Q101 Qualified

Features. Symbol Parameter Rating Units V DS Drain-Source Voltage 30 V V GS Gate-Source Voltage ±20 V

Si4435DYPbF HEXFET Power MOSFET

SMPS MOSFET. V DSS R DS(on) max I D. Symbol Parameter Max. Units

400V N-Channel MOSFET GENERAL DESCRIPTION VDSS RDS(ON) ID. Features. Ordering Information 400V 0.55Ω 10.5A. This Power MOSFET is produced using

AOD452 N-Channel Enhancement Mode Field Effect Transistor

Final data. Maximum Ratings, at T C = 25 C, unless otherwise specified Parameter Symbol Value Unit Continuous drain current

AOV11S60. V T j,max 700V 45A. The AOV11S60 has been fabricated using the advanced αmos TM high voltage process that is designed to deliver

N-Channel 80-V (D-S) MOSFET

V DSS R DS(on) max Qg (typ.) 40V GS = 10V 33nC. Parameter Typ. Max. Units Junction-to-Drain Lead 20 C/W Junction-to-Ambient 50

SMPS MOSFET. V DSS R DS(on) max I D

Maximum Ratings Parameter Symbol Value Unit Continuous drain current T C = 25 C T C = 100 C I D 20.7

AOP606 Complementary Enhancement Mode Field Effect Transistor

IXFK300N20X3 IXFX300N20X3

N-Channel 150 V (D-S) MOSFET

IGBT Designer s Manual

Final data. Maximum Ratings Parameter Symbol Value Unit Continuous drain current T C = 25 C T C = 100 C

P-TO Maximum Ratings Parameter Symbol Value Unit SPP_I SPA Continuous drain current

AO V Dual P + N-Channel MOSFET

CoolMOS Power Transistor

Final data. Maximum Ratings, at T C = 25 C, unless otherwise specified Parameter Symbol Value Unit Continuous drain current

IRLMS2002PbF. HEXFET Power MOSFET V DSS = 20V. R DS(on) = 0.030Ω

Product Summary. Drain source voltage V DS 200 V Drain-Source on-state resistance R DS(on) 0.4 Ω Continuous drain current I D 7 A I D.

AOT404 N-Channel Enhancement Mode Field Effect Transistor

Elerical Characteristics T C = 5 C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BS Drain-Source Break

IXFT150N30X3HV IXFH150N30X3 IXFK150N30X3

2N7000 / 2N7002 / NDS7002A N-Channel Enhancement Mode Field Effect Transistor

NDS8947 Dual P-Channel Enhancement Mode Field Effect Transistor

SSF7NS65UF 650V N-Channel MOSFET

AON4605 Complementary Enhancement Mode Field Effect Transistor

P-Channel 30 V (D-S) MOSFET

IRF5800. HEXFET Power MOSFET V DSS = -30V. R DS(on) = 0.085Ω

Description Absolute Maximum Ratings Parameter Max. Units Thermal Resistance Ratings Parameter Min. Typ. Max. Units

Maximum Ratings Parameter Symbol Value Unit Continuous drain current T C = 25 C T C = 100 C

Product Summary Drain source voltage. Pin 1 Pin2/4 PIN 3 G D S

PD A N-CHANNEL MOSFET 1 D2 P-CHANNEL MOSFET. Top View SO-8. 1

IRGPC40UD2 UltraFast CoPack IGBT

AOD444/AOI444 60V N-Channel MOSFET

Features V F < A (T J = 125 C) V F < A (T J = 25 C) TA=25 o C unless otherwise noted

P-Channel 20 V (D-S) MOSFET

Preliminary data. Maximum Ratings, at T C = 25 C, unless otherwise specified Parameter Symbol Value Unit Continuous drain current

Transcription:

SIUTR TI T 26P//2 S I T TRSISTR eneral escription 26P This planar stripe ST has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for switching mode power supplies. TURS V SS = 6V, I = 2. rain-source Resistance : R S() =5. @V S = 1V g(typ.) = 1.9n XIU RTI (Tc=25 ) I 1 2 3 P 1. T 2. RI 3. SUR I I P IITRS 9.9 +_.2 15.95 X 1.3+.1/-.5.8 +_.1 3.6 +_.2 2.8 +_.1 3.7.5+.1/-.5 1.5 13.8 +_.3 1.46 1.4 +_.1 1.27 +_.1 2.54 +_.2 4.5 +_.2 2.4 +_.2 9.2 +_.2 RTRISTI SY 26P * : rain current limited by maximum junction temperature. RTI 26 262 rain-source Voltage V SS 6 V ate-source Voltage V SS 3 V rain urrent Single Pulsed valanche nergy (ote 2) Repetitive valanche nergy (ote 1) Peak iode Recovery dv/dt (ote 3) rain Power issipation @T =25 I 2. 2.* @T =1 1.2 1.2* Pulsed (ote1) I P 8. 8.* UIT S 12 m R 5.4 m dv/dt 5.5 V/ns Tc=25 P 54 23 W erate above25.43.18 W/ aximum unction Temperature T j 15 Storage Temperature Range T stg -55 15 Thermal haracteristics Thermal Resistance, unction-to-ase R th 2.32 5.5 /W Thermal Resistance, ase-to-sink R ths.5 - /W Thermal Resistance, unction-to- mbient PI TI R th 62.5 62.5 /W S 1 2 3 1 2 3 T-22 R 1. T 2. RI 3. SUR T-22IS (1) 26 262 P R 1. T 2. RI 3. SUR I R IITRS 1.16 +_.2 15.87 +_.2 2.54 +_.2.8 +_.1 3.18 +_.1 3.3 +_.1 12.57 +_.2.5 +_.1 13. X 3.23 +_.1 1.47 X 1.47 X 2.54 +_.2 6.68 +_.2 4.7 +_.2 2.76 +_.2 I IITRS 1. +_.3 15. +_.3 2.7 +_.3.76+.9/-.5 Φ3.2 +_.2 3. +_.3 12. +_.3.5+.1/-.5 13.6 +_.5 3.7 +_.2 1.2+.25/-.1 1.5+.25/-.1 2.54 +_.1 P 6.8 +_.1 4.5 +_.2 R 2.6 +_.2 S.5 Typ S T-22IS 1/7

26P//2 TRI RTRISTIS (Tc=25 ) Static RTRISTI SY TST ITI I. TYP. X. UIT rain-source reakdown Voltage V SS I =25, V S =V 6 - - V reakdown Voltage Temperature oefficient V SS / T j I =25, Referenced to 25 -.65 - V/ rain ut-off urrent I SS V S =6V, V S =V, - - 1 ate Threshold Voltage V th V S =V S, I =25 2. - 4. V ate eakage urrent I SS V S = 3V, V S =V - - 1 n rain-source Resistance R S() V S =1V, I =1. - 3.8 5. ynamic Total ate harge g V S =48V, I =2. ate-source harge gs V S =1V (ote4,5) - - 1.9 1.7 12 3 ate-rain harge gd - 5. 5.5 Turn-on elay time t d(on) - - 28 V Turn-on Rise time t =3V r - - 6 R =15 Turn-off elay time t d(off) - - 58 R =25 (ote4,5) Turn-off all time t f - - 66 Input apacitance iss - 388 54 Reverse Transfer apacitance rss VS=25V, VS=V, f=1.z - 6.5 8.5 utput apacitance oss - 46 59.4 Source-rain iode Ratings ontinuous Source urrent I S V S <V th - - 2. Pulsed Source urrent I SP - - 8. iode orward Voltage V S I S =2., V S =V - - 1.5 V Reverse Recovery Time t rr IS =2., V S =V, - 3 - ns Reverse Recovery harge rr dis/dt=1/ s - 1.55 - ote 1) Repetivity rating : Pulse width limited by junction temperature. ote 2) = 55m, I S = 2., V =5V, R =25, Starting T j = 25. ote 3) I S 2., di/dt 3/, V V SS, Starting T j = 25. ote 4) Pulse Test : Pulse width 3, uty ycle 2%. ote 5) ssentially independent of operating temperature. n ns p 2/7

26P//2 ig1. I - V S ig2. I - V S rain urrent I () V S TP : 15. V 1. V 8. V 7. V 6. V 5.5 V 5. V ottom : 4.5V rain urrent I () 15 25-55 2 4 6 8 1 rain - Source Voltage V S (V) ate - Source Voltage V S (V) ig3. V SS - Tj ig4. R S() - I ormalized reakdown Voltage VSS 1.2 1.1 1..9 V S = V I S = 25.8-1 -5 5 1 15 n - Resistance R S() (Ω) 12 1 8 6 4 2 V S = 1V V S = 2V 1 2 3 4 5 unction Temperature Tj ( ) rain urrent I () ig5. I S - V S ig6. R S() - Tj Reverse rain urrent I S () 15 25 ormalized n Resistance 2.5 2. 1.5 1..5 V S = 1V I S = 2..2.4.6.8 1. 1.2 1.4 1.6 Source - rain Voltage V S (V). -1-5 5 1 15 unction Temperture Tj ( ) 3/7

26P//2 ig7. - V S ig8. g - V S apacitance (p) 7 6 iss 5 4 oss 3 2 rss 1 requency = 1z ate - Source Voltage V S (V) 12 1 8 6 4 2 I =2. V S = 12V V S = 3V V S = 48V 2 4 6 8 1 rain - Source Voltage V S (V) ate - harge g (n) ig9. Safe peration rea ig1. Safe peration rea (26P) (26,262) rain urrent I () peration in this area is limited by R S() 1µs 1ms 1ms T c = 25 T j = 15 Single nonrepetitive pulse 1 2 1 3 rain urrent I () T c = 25 T j = 15 Single nonrepetitive pulse peration in this area is limited by R S() 1 ms 1 ms 1 µs 1ms 1 2 1 3 rain - Source Voltage V S (V) rain - Source Voltage V S (V) ig11. I - T j 2. rain urrent I () 1.6 1.2.8.4. 25 5 75 1 125 15 unction Temperature Tj ( ) 4/7

26P//2 ig12. Transient Thermal Response urve ormalized Transient Thermal Resistance uty=.5.2.1.5.2.1 Single Pulse (26P) - uty actor, = t 1 /t 2 - Rth j-c= 2.32 1-5 1-4 1-3 P t 1 t 2 TI (sec) ig13. Transient Thermal Response urve ormalized Transient Thermal Resistance uty=.5.2.1.5.2.1 Single Pulse (25/2) 1-5 1-4 1-3 P t 1 t 2 - uty actor, = t 1 /t 2 - Rth j-c= 5.5 TI (sec) 5/7

26P//2 ig14. ate harge VS I ast Recovery iode 1 V.8 V SS I 1. m V S gs gd g VS ig15. Single Pulsed valanche nergy 1 S = I 2 2 S V SS V SS - V V SS I S.5 V SS 25Ω V S I (t) 1 V VS V V S (t) ig16. Resistive oad Switching t p Time V S 9% R.5 V SS V 1% S 25 Ω V S t d(on) t r t d(off) t f 1V VS t on t off 6/7

26P//2 ig17. Source - rain iode Reverse Recovery and dv /dt I UT VS I S (UT) ody iode orword urrent di/dt IR IS ody iode Reverse urrent.8 V SS driver VS (UT) V S ody iode Recovery dv/dt V 1V VS ody iode orword Voltage drop 7/7