X3-Class HiPerFET TM Power MOSFET Advance Technical Information IXFTN3X3HV IXFHN3X3 V DSS = 3V I D25 = A R DS(on) 13.5m N-Channel Enhancement Mode Avalanche Rated TO-268HV (IXFT) Symbol Test Conditions Maximum Ratings V DSS = 25 C to 15 C 3 V V DGR = 25 C to 15 C, R GS = 1M 3 V S Continuous 2 V M Transient 3 V I D25 = 25 C A I DM = 25 C, Pulse Width Limited by M 2 A I A = 25 C 5 A E AS = 25 C 1.5 J dv/dt I S I DM, V DD V DSS, 15 C 2 V/ns P D = 25 C 48 W -55... +15 C M 15 C T stg -55... +15 C T L Maximum Lead Temperature for Soldering 3 C T SOLD 1.6 mm (.62in.) from Case for 1s 26 C M d Mounting Torque (TO-247) 1.13 / 1 Nm/lb.in Weight TO-268HV 4 g TO-247 6 g Features G TO-247 (IXFH) G D S S D (Tab) D (Tab) G = Gate D = Drain S = Source Tab = Drain International Standard Packages Low R DS(ON) and Q G Avalanche Rated Low Package Inductance Advantages Symbol Test Conditions Characteristic Values ( = 25 C, Unless Otherwise Specified) Min. Typ. Max. BV DSS = V, I D = 1mA 3 V (th) V DS =, I D = 4mA 2.5 4.5 V I GSS = 2V, V DS = V na I DSS V DS = V DSS, = V 1 A = 125 C 75 A R DS(on) = 1V, I D =.5 I D25, Note 1 1.6 13.5 m High Power Density Easy to Mount Space Savings Applications Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters PFC Circuits AC and DC Motor Drives Robotics and Servo Controls 217 IXYS CORPORATION, All Rights Reserved DS862A(11/17)
IXFTN3X3HV IXFHN3X3 Symbol Test Conditions Characteristic Values ( = 25 C, Unless Otherwise Specified) Min. Typ. Max g fs V DS = 1V, I D = 5A, Note 1 48 8 S R Gi Gate Input Resistance 1.8 C iss 766 pf C oss = V, V DS = 25V, f = 1MHz 114 pf C rss 3 pf Effective Output Capacitance C o(er) Energy related V 43 pf GS = V C o(tr) Time related V 195 pf DS =.8 V DSS t d(on) 29 ns Resistive Switching Times t r 3 ns = 1V, V DS =.5 V DSS, I D =.5 I D25 t d(off) 114 ns R G = 5 (External) t f 14 ns Q g(on) 122 nc Q gs = 1V, V DS =.5 V DSS, I D =.5 I D25 35 nc Q gd 36 nc R thjc.26 C/W R thcs TO-247.21 C/W Source-Drain Diode Symbol Test Conditions Characteristic Values ( = 25 C, Unless Otherwise Specified) Min. Typ. Max I S = V A I SM Repetitive, pulse Width Limited by M 4 A V SD I F = I S, = V, Note 1 1.4 V t rr I 13 ns F = 5A, -di/dt = A/μs Q RM 72 nc V I R = V RM 11 A Note 1. Pulse test, t 3 s, duty cycle, d 2%. ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,49,961 5,237,481 6,162,665 6,44,65B1 6,683,344 6,727,585 7,5,734B2 7,157,338B2 by one or more of the following U.S. patents: 4,86,72 5,17,58 5,63,37 5,381,25 6,259,123B1 6,534,343 6,71,45B2 6,759,692 7,63,975B2 4,881,16 5,34,796 5,187,117 5,486,715 6,36,728B1 6,583,55 6,71,463 6,771,478B2 7,71,537
IXFTN3X3HV IXFHN3X3 9 8 7 6 5 4 3 2 1 Fig. 1. Output Characteristics @ = 25 o C.2.4.6.8 1 1.2 1.4 = 1V 9V 8V 7V 6V 5V Fig. 2. Extended Output Characteristics @ = 25 o C 4 = 1V 35 9V 3 8V 25 2 7V 15 6V 5 5V 5 1 15 2 25 9 8 Fig. 3. Output Characteristics @ = 125 o C = 1V 8V 7V 3. 2.6 Fig. 4. R DS(on) Normalized to I D = 5A Value vs. Junction Temperature = 1V 7 6 6V 5 4 3 5V 2 1 4V.5 1 1.5 2 2.5 3 RDS(on) - Normalized 2.2 1.8 I D = A 1.4 I D = 5A 1..6.2-5 -25 25 5 75 125 15 - Degrees Centigrade 4.5 Fig. 5. R DS(on) Normalized to I D = 5A Value vs. Drain Current 1.3 Fig. 6. Normalized Breakdown & Threshold Voltages vs. Junction Temperature 4. = 1V 1.2 RDS(on) - Normalized 3.5 3. 2.5 2. 1.5 = 125 o C = 25 o C BVDSS / VGS(th) - Normalized 1.1 1..9.8 BV DSS 1..7 (th).5 5 15 2 25 3 35 4 I D - Amperes.6-6 -4-2 2 4 6 8 12 14 16 - Degrees Centigrade 217 IXYS CORPORATION, All Rights Reserved
IXFTN3X3HV IXFHN3X3 Fig. 7. Maximum Drain Current vs. Case Temperature 18 Fig. 8. Input Admittance 16 V DS = 1V 8 14 12 6 4 8 6 = 125 o C 25 o C 2 4 2-4 o C -5-25 25 5 75 125 15 - Degrees Centigrade 3.5 4. 4.5 5. 5.5 6. 6.5 7. - Volts Fig. 9. Transconductance Fig. 1. Forward Voltage Drop of Intrinsic Diode 16 14 V DS = 1V = - 4 o C 3 25 g f s - Siemens 12 8 6 25 o C 125 o C IS - Amperes 2 15 = 125 o C 4 2 5 = 25 o C 2 4 6 8 12 14 16 18 I D - Amperes.3.4.5.6.7.8.9 1. 1.1 1.2 1.3 1.4 V SD - Volts Fig. 11. Gate Charge Fig. 12. Capacitance 1, 9 V DS = 15V VGS - Volts 8 7 6 5 4 3 2 I D = 5A I G = 1mA Capacitance - PicoFarads 1, 1, 1 Ciss Coss Crss 1 2 4 6 8 12 Q G - NanoCoulombs f = 1 MHz 1 1 1 1, IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXFTN3X3HV IXFHN3X3 18 Fig. 13. Output Capacitance Stored Energy Fig. 14. Forward-Bias Safe Operating Area 16 R DS(on) Limit 14 25μs EOSS - MicroJoules 12 1 8 6 1 μs 4 2 5 15 2 25 3 1 Fig. 15. Maximum Transient Thermal Impedance 1 = 15 o C = 25 o 1ms C Single Pulse 1ms DC.1 1 1 1,.4 Fig. 15. Maximum Transient Thermal Impedance aaaaa.1 Z(th)JC - K / W.1.1.1.1.1.1.1 1 Pulse Width - Second 217 IXYS CORPORATION, All Rights Reserved IXYS REF: F_N3X3 (26-S31) 11-2-17
IXFTN3X3HV IXFHN3X3 TO-268HV Outline PINS: 1 - Gate 2 - Source 3 - Drain TO-247 Outline D A A2 E B A P O + K M D B M R + Q S D2 + D P1 4 D1 L1 1 2 3 ixys option L C E1 A1 c b b2 b4 e O + J M C A M PINS: 1 - Gate 2, 4 - Drain 3 - Source IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.