Advance Technical Information TrenchT2 TM HiperFET TM Power MOSFET IXFH4N75T2 IXFT4N75T2 V DSS I D25 R DS(on) = 75V = 4A 2.3mΩ N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-247 (IXFH) Symbol Test Conditions Maximum Ratings V DSS = 25 C to 175 C 75 V V DGR = 25 C to 175 C, R GS = 1MΩ 75 V S Continuous ± 2 V M Transient ± 3 V I D25 = 25 C (Chip Capability) 4 A I LRMS Lead Current Limit, RMS 16 A I DM = 25 C, Pulse Width Limited by M A I A = 25 C 2 A E AS = 25 C 1.5 J dv/dt I S I DM, V DD V DSS, 175 C 15 V/ns P D = 25 C W -55... +175 C M 175 C T stg -55... +175 C T L 1.6mm (.62in.) from Case for 1s 3 C T sold Plastic Body for 1 seconds 26 C M d Mounting Torque (TO-247) 1.13 / 1 Nm/lb.in. Weight TO-247 6 g TO-268 4 g Symbol Test Conditions Characteristic Values ( = 25 C Unless Otherwise Specified) Min. Typ. Max. BV DSS = V, I D = 1mA 75 V (th) V DS =, I D = 25μA 2. 4. V I GSS = ± 2V, V DS = V ±2 na I DSS V DS = V DSS, = V 25 μa = 15 C 1.5 ma R DS(on) = 1V, I D = A, Notes 1 & 2 2.3 mω Features G D S TO-268 (IXFT) G = Gate D = Drain S = Source Tab = Drain International Standard Packages 175 C Operating Temperature High Current Handling Capability Avalanche Rated Fast Intrinsic Diode Low R DS(on) Advantages Easy to Mount Space Savings High Power Density Applications G S D (Tab) D (Tab) DC/DC Converters and Off-line UPS Primary- Side Switch High Current Switching Applications 29 IXYS CORPORATION, All Rights Reserved DS221(12/9)
Symbol Test Conditions Characteristic Values ( = 25 C, Unless Otherwise Specified) Min. Typ. Max. IXFH4N75T2 IXFT4N75T2 TO-247 (IXFH) Outline g fs V DS = 1V, I D = 6A, Note 1 8 13 S C iss 24 nf C oss = V, V DS = 25V, f = 1MHz 277 pf C rss 455 pf R Gi Gate Input Resistance 1.33 Ω 1 2 3 P t d(on) 35 ns Resistive Switching Times t r 2 ns = 1V, V DS =.5 V DSS, I D = 2A t d(off) 67 ns R G = 1Ω (External) t f 44 ns Q g(on) 42 nc Q gs = 1V, V DS =.5 V DSS, I D =.5 I D25 114 nc Q gd 13 nc R thjc.15 C/W R thch TO-247.21 C/W Source-Drain Diode Symbol Test Conditions Characteristic Values ( = 25 C, Unless Otherwise Specified) Min. Typ. Max. I S = V 4 A I SM Repetitive, Pulse Width Limited by M 12 A V SD I F = A, = V, Note 1 1.2 V Terminals: 1 - Gate 2 - Drain 3 - Source Tab - Drain Dim. Millimeter Inches Min. Max. Min. Max. A 4.7 5.3.185.29 A 1 2.2 2.54.87.12 A 2 2.2 2.6.59.98 b 1. 1.4.4.55 b 1 1.65 2.13.65.84 b 2 2.87 3.12.113.123 C.4.8.16.31 D 2.8 21.46.819.845 E 15.75 16.26.61.64 e 5.2 5.72.25.225 L 19.81 2.32.78.8 L1 4.5.177 P 3.55 3.65.14.144 Q 5.89 6.4.232.252 R 4.32 5.49.17.216 S 6.15 BSC 242 BSC TO-268 (IXFT) Outline e t rr I F = A, = V 77 ns I RM -di/dt = A/μs 5.4 A Q RM V R = 37.5V 21 nc Notes: 1. Pulse test, t 3μs, duty cycle, d 2%. 2. Includes lead resistance. Terminals: 1 - Gate 2 - Drain 3 - Source Tab - Drain ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,49,961 5,237,481 6,162,665 6,44,65 B1 6,683,344 6,727,585 7,5,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,85,72 5,17,58 5,63,37 5,381,25 6,259,123 B1 6,534,343 6,71,45 B2 6,759,692 7,63,975 B2 4,881,16 5,34,796 5,187,117 5,486,715 6,36,728 B1 6,583,55 6,71,463 6,771,478 B2 7,71,537
IXFH4N75T2 IXFT4N75T2 Fig. 1. Output Characteristics @ = 25ºC Fig. 2. Extended Output Characteristics @ = 25ºC 35 3 25 = 15V 1V 8V 7V 4 35 3 = 15V 1V 8V 7V 2 15 6V 5V 25 2 15 6V 5V 5 4V.1.2.3.4.5.6.7.8 5 4V..5 1. 1.5 2. 2.5 35 3 25 2 15 Fig. 3. Output Characteristics @ = 15ºC = 15V 1V 8V 7V 6V 5V RDS(on) - Normalized 2.4 2.2 2. 1.8 1.6 1.4 1.2 1. = 1V Fig. 4. R DS(on) Normalized to I D = 2A Value vs. Junction Temperature I D = 4A I D = 2A 5 4V.8..2.4.6.8 1. 1.2 1.4.6-5 -25 25 5 75 125 15 175 - Degrees Centigrade 2.4 Fig. 5. R DS(on) Normalized to I D = 2A vs. Drain Current 18 Fig. 6. Drain Current vs. Case Temperature RDS(on) - Normalized 2.2 2. 1.8 1.6 1.4 = 1V 15V = 175ºC 16 14 12 8 6 External Lead Current limit 1.2 = 25ºC 4 1. 2.8 5 15 2 25 3 35 4-5 -25 25 5 75 125 15 175 - Degrees Centigrade 29 IXYS CORPORATION, All Rights Reserved
IXFH4N75T2 IXFT4N75T2 Fig. 7. Input Admittance Fig. 8. Transconductance 22 2 24 = - 4ºC 18 2 16 14 12 8 6 = 15ºC 25ºC - 4ºC g f s - Siemens 16 12 8 25ºC 15ºC 4 2 2.5 3. 3.5 4. 4.5 5. 5.5 6. - Volts 4 2 4 6 8 12 14 16 18 2 22 24 35 Fig. 9. Forward Voltage Drop of Intrinsic Diode 1 Fig. 1. Gate Charge 3 25 9 8 7 I D = 2A I G = 1mA IS - Amperes 2 15 5 = 15ºC = 25ºC VGS - Volts 6 5 4 3 2 1.2.3.4.5.6.7.8.9 1. 1.1 V SD - Volts 5 15 2 25 3 35 4 45 Q G - NanoCoulombs Fig. 11. Capacitance Fig. 12. Forward-Bias Safe Operating Area, 1, f = 1 MHz Capacitance - PicoFarads 1, C oss 1, C rss 5 1 15 2 25 3 35 4 C iss R DS(on) Limit 1, 25µs External Lead Limit µs 1ms 1 = 175ºC = 25ºC 1ms Single Pulse ms DC 1.1 1 1 IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXFH4N75T2 IXFT4N75T2 Fig. 13. Resistive Turn-on Rise Time vs. Junction Temperature Fig. 14. Resistive Turn-on Rise Time vs. Drain Current 7 7 6 R G = 1Ω, = 1V 6 R G = 1Ω, = 1V 5 5 t r - Nanoseconds 4 3 2 I D = A I D = 2A t r - Nanoseconds 4 3 2 = 125ºC = 25ºC 1 1 25 35 45 55 65 75 85 95 15 115 125 - Degrees Centigrade 4 6 8 12 14 16 18 2 Fig. 15. Resistive Turn-on Switching Times vs. Gate Resistance Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature 5 12 6 t r - Nanoseconds 4 3 2 t r t d(on) - - - - = 125ºC, = 1V I D = 2A I D = A 8 6 t d(on) - Nanoseconds t f - Nanoseconds 55 5 45 4 35 3 t f t d(off) - - - - R G = 1Ω, = 1V I D = 2A I D = A 95 9 85 8 75 7 t d(off) - Nanoseconds 4 25 65 1 2 3 4 5 6 7 8 9 1 R G - Ohms 2 2 6 25 35 45 55 65 75 85 95 15 115 125 - Degrees Centigrade Fig. 17. Resistive Turn-off Switching Times vs. Drain Current Fig. 18. Resistive Turn-off Switching Times vs. Gate Resistance 55 12 6 6 t f - Nanoseconds 5 45 4 35 3 t f t d(off) - - - - R G = 1Ω, = 1V = 25ºC, 125ºC 11 9 8 7 t d(off) - Nanoseconds t f - Nanoseconds 5 4 3 2 t f t d(off) - - - - = 125ºC, = 1V I D = 2A, A 5 4 3 2 t d(off) - Nanoseconds 25 6 2 5 4 6 8 12 14 16 18 2 1 2 3 4 5 6 7 8 9 1 R G - Ohms 29 IXYS CORPORATION, All Rights Reserved
IXFH4N75T2 IXFT4N75T2 Fig. 19. Maximum Transient Thermal Impedance 1..3 Fig. 19. Maximum Transient Thermal Impedance dfafas. Z (th)jc - ºC / W.1.1.1.1.1.1.1 1 1 Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: F_4N75T2(98)12-15-9