Preliminary Technical Information TrenchT2 TM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTA3N4T2-7 V DSS = V I D = 3A 2.5mΩ R DS(on) TO-263 (7-lead) Symbol Test Conditions Maximum Ratings V DSS T J = C to 1 C V V DGR T J = C to 1 C, R GS = 1MΩ V M Transient ± V I D = C 3 A I LRMS Lead Current Limit, RMS 16 A I DM = C, pulse width limited by T JM 9 A I A = C A E AS = C 6 mj P D = C 48 W T J -55... +1 C T JM 1 C T stg -55... +1 C T L 1.6mm (.62in.) from case for 1s 3 C T sold Plastic body for 1 seconds 26 C Weight 3 g 1 Features 7 Pins: 1 - Gate 2, 3 - Source 5,6,7 - Source TAB (8) - Drain International standard package 1 C Operating Temperature Avalanche rated High current handling capability Low R DS(on) (TAB) Advantages Symbol Test Conditions Characteristic Values (T J = C unless otherwise specified) Min. Typ. Max. BV DSS = V, I D = μa V (th) V DS =, I D = μa 2. 4. V I GSS = ± V, V DS = V ± na I DSS V DS = V DSS 5 μa = V T J = C μa R DS(on) = 1V, I D = 5A, Notes 1, 2 2.5 mω Easy to mount Space savings High power density Applications Synchronous Buck Converters High Current Switching Power Supplies Battery Powered Electric Motors Resonant-mode power supplies Electronics Ballast Application Class D Audio Amplifiers 8 IXYS CORPORATION, All rights reserved DS72(11/8)
IXTA3N4T2-7 Symbol Test Conditions Characteristic Values (T J = C, unless otherwise specified) Min. Typ. Max. TO-263 (7-lead) (IXTA..7) Outline g fs V DS = 1V, I D = 6A, Note 1 55 94 S C iss 1.7 nf C oss = V, V DS = V, f = 1MHz 163 pf C rss 263 pf t d(on) Resistive Switching Times 22 ns t r = 1V, V DS =.5 V DSS, I D = A 17 ns t d(off) R G = 2Ω (External) 32 ns t f 13 ns Q g(on) 1 nc Q gs = 1V, V DS =.5 V DSS, I D =.5 I D 44 nc Q gd 36 nc R thjc.31 C/W Pins: 1 - Gate 2, 3 - Source 4 - Drain 5,6,7 - Source Tab (8) - Drain Source-Drain Diode Symbol Test Conditions Characteristic Values (T J = C, unless otherwise specified) Min. Typ. Max. I S = V 3 A I SM Repetitive, Pulse width limited by T JM A V SD I F = A, = V, Note 1 1.3 V t rr I F = A, = V 53 ns I RM -di/dt = A/μs 1.8 A Q RM V R = V 47.7 nc Notes: 1. Pulse test, t 3μs; duty cycle, d 2%. 2. On through-hole packages, R DS(on) Kelvin test contact location must be 5mm or less from the package body. PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,8,592 4,931,844 5,49,961 5,237,481 6,162,665 6,4,65 B1 6,683,344 6,727,585 7,5,734 B2 7,7,338B2 by one or more of the following U.S. patents: 4,85,72 5,17,58 5,63,37 5,381, 6,9,123 B1 6,534,343 6,71,5 B2 6,9,692 7,63,9 B2 4,881,16 5,34,796 5,187,117 5,486,7 6,36,728 B1 6,583,55 6,71,463 6,771,478 B2 7,71,537
IXTA3N4T2-7 3 2 2 1 1 5 Fig. 1. Output Characteristics @ ºC = V 1V 9V 8V..1.2.3.4.5.6.7 7V 6V 5V Fig. 3. Output Characteristics @ ºC 3 Fig. 2. Extended Output Characteristics @ ºC = V 1V 9V 8V 7V 6V 5 5V..4.8 1.2 1.6 2. 2.4 Fig. 4. R DS(on) Normalized to I D = A Value vs. Junction Temperature 3 2 2 1 1 5 = V 1V 9V 8V..2.4.6.8 1. 1.2 1.4 7V 6V 5V RDS(on) - Normalized 2. 1.9 = 1V 1.8 1.7 1.6 I D = 3A 1.5 I D = A 1.4 1.3 1.2 1.1 1..9.8.7.6-5 - 5 1 1 T J - Degrees Centigrade RDS(on) - Normalized Fig. 5. R DS(on) Normalized to I D = A Value vs. Drain Current 2.2 2.1 = 1V 2. V - - - - 1.9 T J = 1ºC 1.8 1.7 1.6 1.5 1.4 1.3 1.2 T J = ºC 1.1 1..9.8 5 3 Fig. 6. Drain Current vs. Case Temperature 18 External Lead Current Limit 16 1 1 8 6-5 - 5 1 1 - Degrees Centigrade 8 IXYS CORPORATION, All rights reserved
IXTA3N4T2-7 Fig. 7. Input Admittance Fig. 8. Transconductance 18 16 16 1 T J = - ºC 1 1 ºC 1 8 6 T J = ºC ºC - ºC g f s - Siemens 8 6 ºC 3. 3.5 4. 4.5 5. 5.5 6. - Volts 6 8 1 1 16 18 Fig. 9. Forward Voltage Drop of Intrinsic Diode Fig. 1. Gate Charge 3 1 28 2 9 8 7 V DS = V I D = A I G = 1mA IS - Amperes 16 1 8 T J = ºC T J = ºC VGS - Volts 6 5 4 3 2 1.3.4.5.6.7.8.9 1. 1.1 1.2 1.3 V SD - Volts 6 8 1 1 Q G - NanoCoulombs, f = 1 MHz Fig. 11. Capacitance 1, Fig. 12. Forward-Bias Safe Operating Area R DS(on) Limit Capacitance - PicoFarads 1, 1, C iss C oss C rss 1 External Lead Current Limit TJ = 1ºC TC = ºC Single Pulse DC µs µs 1ms 1ms ms 5 1 3 1 1 1 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS REF: T_3N4T2(V6)11-1-8-A
IXTA3N4T2-7 Fig. 13. Resistive Turn-on Rise Time vs. Junction Temperature Fig. 14. Resistive Turn-on Rise Time vs. Drain Current 3 28 26 R G = 2Ω = 1V V DS = V T J = 1ºC R G = 2Ω = 1V V DS = V t r 24 22 18 I D = A I D = A t r 3 16 T J = ºC 14 55 65 85 95 1 1 T J - Degrees Centigrade 1 6 8 1 1 16 18 Fig.. Resistive Turn-on Switching Times vs. Gate Resistance Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature 1 55 t r 8 6 t r t d(on) - - - - T J = 1ºC, = 1V V DS = V I D = A, A 65 55 t d(on) t f 3 t f t d(off) - - - - R G = 2Ω, = 1V V DS = V I D = A I D = A 5 3 t d(off) 1 2 4 6 8 1 12 14 16 R G - Ohms 5 55 65 85 95 1 1 T J - Degrees Centigrade Fig. 17. Resistive Turn-off Switching Times vs. Drain Current Fig. 18. Resistive Turn-off Switching Times vs. Gate Resistance 6 2 t f 36 32 28 24 16 T J = ºC t f t d(off) - - - - R G = 2Ω, = 1V V DS = V T J = 1ºC 55 5 3 t d(off) t f 2 1 1 5 t f t d(off) - - - - T J = 1ºC, = 1V V DS = V I D = A, A 18 16 1 1 8 6 t d(off) 12 8 6 8 1 1 16 18 2 4 6 8 1 12 14 16 R G - Ohms 8 IXYS CORPORATION, All rights reserved
IXTA3N4T2-7 Fig. 19. Maximum Transient Thermal Impedance 1. Z (th)jc - ºC / W..1.1.1.1.1.1.1 1 1 Pulse Width - Seconds IXYS reserves the right to change limits, test conditions, and dimensions. IXYS REF: T_3N4T2(V6)11-1-8-A