Reverse Conducting IGBT with monolithic body diode Features: Powerful monolithic Body Diode with very low forward voltage Body diode clamps negative voltages TrenchStop and Fieldstop technology for 1200 V applications offers : very tight parameter distribution high ruggedness, temperature stable behavior NPT technology offers easy parallel switching capability due to positive temperature coefficient in V CE(sat) Low EMI Qualified according to JEDEC 1 for target applications Pbfree lead plating; RoHS compliant Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ C G E PGTO2473 Applications: Inductive Cooking Soft Switching Applications Type V CE I C V CE(sat),Tj=25 C T j,max Marking Package 1200V 1.55V 175 C H20R1202 PGTO2473 Maximum Ratings Parameter Symbol Value Unit Collectoremitter voltage V CE 1200 V DC collector current T C = 25 C T C = 100 C Pulsed collector current, t p limited by T jmax I Cpuls 60 Turn off safe operating area (V CE 1200V, T j 175 C) 60 Diode forward current I F T C = 25 C T C = 100 C 40 20 Diode pulsed current, t p limited by T jmax I Fpuls 30 Diode surge non repetitive current, t p limited by T jmax T C = 25 C, t p = 10ms, sine halfwave T C = 25 C, t p 2.5µs, sine halfwave T C = 100 C, t p 2.5µs, sine halfwave Gateemitter voltage Transient Gateemitter voltage (t p < 5 ms) I C I FSM 40 20 50 130 120 V GE ±20 ±25 Power dissipation T C = 25 C P tot 330 W Operating junction temperature T j 40...+175 Storage temperature T stg 55...+175 Soldering temperature, 1.6mm (0.063 in.) from case for 10s 260 A V C 1 JSTD020 and JESD022 Power Semiconductors 1 Rev. 1.4 Febr. 08
Thermal Resistance Parameter Symbol Conditions Max. Value Unit Characteristic IGBT thermal resistance, junction case Diode thermal resistance, junction case Thermal resistance, junction ambient R thjc 0.45 R thjcd 0.45 R thja 40 K/W Electrical Characteristic, at T j = 25 C, unless otherwise specified Parameter Symbol Conditions Value min. Typ. max. Static Characteristic Collectoremitter breakdown voltage V (BR)CES V GE =0V, I C =500μA 1200 Collectoremitter saturation voltage V CE(sat) V GE = 15V, I C = T j =25 C T j =125 C T j =175 C Diode forward voltage V F V GE =0V, I F = T j =25 C T j =125 C T j =175 C Gateemitter threshold voltage V GE(th) I C =0.5mA, V CE =V GE Zero gate voltage collector current I CES V CE =1200V, V GE =0V T j =25 C T j =175 C 1.55 1.75 1.85 1.45 1.6 1.65 1.75 1.7 5.1 5.8 6.4 5 2500 Gateemitter leakage current I GES V CE =0V,V GE =20V 100 na Transconductance g fs V CE =20V, I C = 14.5 S Integrated gate resistor R Gint none Ω Unit V µa Power Semiconductors 2 Rev. 1.4 Febr. 08
Dynamic Characteristic Input capacitance C iss V CE =25V, 1887 pf Output capacitance C oss V GE =0V, 59 Reverse transfer capacitance C rss f=1mhz 47 Gate charge Q Gate V CC =960V, I C = 143 nc V GE =15V Internal emitter inductance measured 5mm (0.197 in.) from case L E 13 nh Switching Characteristic, Inductive Load, at T j =25 C Parameter Symbol Conditions Value min. typ. Max. Unit IGBT Characteristic Turnoff delay time t d(off) T j =25 C, 359 ns Fall time t V CC =600V,I C = f 53 V GE =0 /15V, Turnon energy E on R G =15Ω, Turnoff energy E off L 2) σ =180nH, 1.2 Total switching energy C 2) σ =39pF 1.2 mj E ts Switching Characteristic, Inductive Load, at T j =175 C Parameter Symbol Conditions Value min. Typ. Max. Unit IGBT Characteristic Turnoff delay time t d(off) T j =175 C 427 ns Fall time t V CC =600V,I C =, f 99 V GE = 0 /15V, Turnon energy E on R G = 15Ω, Turnoff energy E off L σ =180nH 2), 2.0 Total switching energy C σ =39pF 2) 2.0 mj E ts 2) Leakage inductance L σ and Stray capacity C σ due to dynamic test circuit in Figure E. Power Semiconductors 3 Rev. 1.4 Febr. 08
t p =1µs 60A 10µs IC, COLLECTOR CURRENT 40A I c T C =80 C T C =110 C IC, COLLECTOR CURRENT 1A 20µs 50µs 500µs 5ms 0A 10Hz 100Hz 1kHz 10kHz 100kHz 1V 10V 100V 1000V f, SWITCHING FREQUENCY V CE, COLLECTOREMITTER VOLTAGE Figure 1. Collector current as a function of switching frequency for hard switching (turnoff) (T j 175 C, D = 0.5, V CE = 600V, V GE = 0/+15V, R G = 15Ω) Figure 2. IGBT Safe operating area (D = 0, T C = 25 C, T j 175 C;V GE =15V) DC 300W 40A Ptot, DISSIPATED POWER 250W 200W 150W 100W 50W IC, COLLECTOR CURRENT 30A 0W 25 C 50 C 75 C 100 C 125 C 150 C 0A 25 C 50 C 75 C 100 C 125 C 150 C T C, CASE TEMPERATURE Figure 3. Power dissipation as a function of case temperature (T j 175 C) T C, CASE TEMPERATURE Figure 4. DC Collector current as a function of case temperature (V GE 15V, T j 175 C) Power Semiconductors 4 Rev. 1.4 Febr. 08
50A 50A IC, COLLECTOR CURRENT 40A 30A V GE =20V 15V 13V 11V 9V 7V IC, COLLECTOR CURRENT 40A 30A V GE =20V 15V 13V 11V 9V 7V 0A 0V 1V 2V V CE, COLLECTOREMITTER VOLTAGE Figure 5. Typical output characteristic (T j = 25 C) 0A 0V 1V 2V 3V V CE, COLLECTOREMITTER VOLTAGE Figure 6. Typical output characteristic (T j = 175 C) IC, COLLECTOR CURRENT 50A 40A 30A T J =175 C 25 C 0A 0V 2V 4V 6V 8V 10V VCE(sat), COLLECTOREMITT SATURATION VOLTAGE 2.5V 2.0V 1.5V 1.0V 0.5V 0.0V I C =40A I C = I C = 0 C 50 C 100 C 150 C V GE, GATEEMITTER VOLTAGE Figure 7. Typical transfer characteristic (V CE =20V) T J, JUNCTION TEMPERATURE Figure 8. Typical collectoremitter saturation voltage as a function of junction temperature (V GE =15V) Power Semiconductors 5 Rev. 1.4 Febr. 08
1000ns 1000ns t d(off) t, SWITCHING TIMES 100ns t d(off) t, SWITCHING TIMES t f 100ns t f 0A 30A 10Ω 20Ω 30Ω 40Ω 50Ω 60Ω 70Ω I C, COLLECTOR CURRENT Figure 9. Typical switching times as a function of collector current (inductive load, T J =175 C, V CE =600V, V GE =0/15V, R G =15Ω, R G, GATE RESISTOR Figure 10. Typical switching times as a function of gate resistor (inductive load, T J =175 C, V CE =600V, V GE =0/15V, I C =, t d(off) t, SWITCHING TIMES 100ns t f VGE(th), GATEEMITT TRSHOLD VOLTAGE 6V 5V 4V 3V typ. min. max. 10ns 25 C 50 C 75 C 100 C 125 C 150 C T J, JUNCTION TEMPERATURE Figure 11. Typical switching times as a function of junction temperature (inductive load, V CE =600V, V GE =0/15V, I C =, R G =29Ω, 2V 50 C 0 C 50 C 100 C T J, JUNCTION TEMPERATURE Figure 12. Gateemitter threshold voltage as a function of junction temperature (I C = 0.5mA) Power Semiconductors 6 Rev. 1.4 Febr. 08
E off E, SWITCHING ENERGY LOSSES 3.0mJ 2.0mJ 1.0mJ E off E, SWITCHING ENERGY LOSSES 2.0mJ 1.0mJ 0.0mJ 0A 30A 0.0mJ 20Ω 30Ω 40Ω 50Ω 60Ω 70Ω 80Ω I C, COLLECTOR CURRENT Figure 13. Typical turnoff energy as a function of collector current (inductive load, T J =175 C, V CE =600V, V GE =0/15V, R G =15Ω, R G, GATE RESISTOR Figure 14. Typical turnoff energy as a function of gate resistor (inductive load, T J =175 C, V CE =600V, V GE =0/15V, I C =, 2.0mJ E off E, SWITCHING ENERGY LOSSES 1.5mJ 1.0mJ 0.5mJ E off E, SWITCHING ENERGY LOSSES 1.5mJ 1.0mJ 0.5mJ 0.0mJ 25 C 50 C 75 C 100 C 125 C 150 C 0.0mJ 600V 700V T J, JUNCTION TEMPERATURE Figure 15. Typical turnoff energy as a function of junction temperature (inductive load, V CE =600V, V GE =0/15V, I C =, R G =15Ω, V CE, COLLECTOREMITTER VOLTAGE Figure 16. Typical turnoff energy as a function of collector emitter voltage (inductive load, T J =175 C, V GE =0/15V, I C =, R G =15Ω, Power Semiconductors 7 Rev. 1.4 Febr. 08
C iss 1nF VGE, GATEEMITTER VOLTAGE 10V 5V 240V 960V c, CAPACITANCE 100pF C oss C rss 0V 0nC 50nC 100nC 150nC Q GE, GATE CHARGE Figure 17. Typical gate charge (I C =20 A) 10pF 0V 10V 20V V CE, COLLECTOREMITTER VOLTAGE Figure 18. Typical capacitance as a function of collectoremitter voltage (V GE =0V, f = 1 MHz) ZthJC, TRANSIENT THERMAL RESISTANCE 10 1 K/W 10 2 K/W D=0.5 0.2 0.1 0.05 0.02 0.01 single pulse R,(K/W) τ, (s) 0.0578 1.16*10 1 0.1699 1.88*10 2 0.1392 2.03*10 3 0.087 2.38*10 4 R 1 R 2 C 1=τ 1/R 1 C 2=τ 2/R 2 ZthJC, TRANSIENT THERMAL RESISTANCE 10 1 K/W 10 2 K/W D=0.5 0.2 0.1 0.05 0.02 0.01 single pulse R,(K/W) τ, (s) 0.0788 1.04*10 1 0.183 1.52*10 2 0.162 9.51*10 4 0.0505 4.95*10 5 R 1 R 2 C 1=τ 1/R 1 C 2=τ 2/R 2 10 3 K/W 10µs 100µs 1ms 10ms 100ms 10µs 100µs 1ms 10ms 100ms t P, PULSE WIDTH Figure 19. IGBT transient thermal resistance (D = t p / T) t P, PULSE WIDTH Figure 20. Diode transient thermal impedance as a function of pulse width (D=t P /T) Power Semiconductors 8 Rev. 1.4 Febr. 08
35A 30A 2.0V I F =40A IF, FORWARD CURRENT 25A 15A T J =25 C 175 C VF, FORWARD VOLTAGE 1.5V 1.0V 0.5V 5A 0A 0.0V 0.5V 1.0V 1.5V 2.0V 0.0V 0 C 50 C 100 C 150 C V F, FORWARD VOLTAGE Figure 21. Typical diode forward current as a function of forward voltage T J, JUNCTION TEMPERATURE Figure 22. Typical diode forward voltage as a function of junction temperature Power Semiconductors 9 Rev. 1.4 Febr. 08
PGTO2473 Power Semiconductors 10 Rev. 1.4 Febr. 08
i,v di F /dt t =t + t rr S F Q =Q + Q rr S F t rr I F t S t F Q S Q F 10% I rrm t I rrm di 90% I rrm rr /dt V R Figure C. Definition of diodes switching characteristics T(t) j τ 1 r1 τ 2 r2 τ r n n p(t) r r 1 2 n r Figure A. Definition of switching times T C Figure D. Thermal equivalent circuit Figure B. Definition of switching losses Figure E. Dynamic test circuit Leakage inductance L σ and Stray capacity C σ Power Semiconductors 11 Rev. 1.4 Febr. 08
Edition 200601 Published by Infineon Technologies AG 81726 München, Germany Infineon Technologies AG 2/14/08. All Rights Reserved. Attention please! The information given in this data sheet shall in no event be regarded as a guarantee of conditions or characteristics ( Beschaffenheitsgarantie ). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of noninfringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in lifesupport devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that lifesupport device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Power Semiconductors 12 Rev. 1.4 Febr. 08
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