XPT TM 6V IGBT GenX3 TM w/diode (Electrically Isolated Tab) Preliminary Technical Information MMIXXN6B3H S = 6V = 7A (sat).7v t fi(typ) = ns Extreme Light Punch Through IGBT for -3kHz Switching Symbol Test Conditions Maximum Ratings S = 5 C to 5 C 6 V V CGR = 5 C to 5 C, R GE = MΩ 6 V V GES Continuous ± V V GEM Transient ±3 V 5 = 5 C (Chip Capability) 75 A = C 7 A I F = C 8 A M = 5 C, ms A I A = 5 C A E AS = 5 C J SSOA V GE = 5V, T VJ = 5 C, R G = Ω M = A (RBSOA) Clamped Inductive Load @ S t sc V GE = 5V, = 36V, = 5 C μs (SCSOA) R G = Ω, Non Repetitive P C = 5 C 5 W -55... +5 C M 5 C T stg -55... +5 C T L Maximum Lead Temperature for Soldering 3 C T SOLD.6 mm (.6 in.) from Case for 6 C V ISOL 5/6Hz, minute 5 V~ F C Mounting Force 5../..5 N/lb. Weight 8 g Symbol Test Conditions Characteristic Values ( = 5 C, Unless Otherwise Specified) Min. Typ. Max. BS = 5μA, V GE = V 6 V V GE(th) = 5μA, = V GE 3.5 6. V ES = S, V = V 5 μa GE Note, = 5 C 3 ma I GES = V, V GE = ±V ± na (sat) = A, V GE = 5V, Note..7 V = 5 C.58 V G E E Isolated Tab G G = Gate E = Emitter C = Collector Features Silicon Chip on Direct-Copper Bond (DCB) Substrate Isolated Mounting Surface 5V~ Electrical Isolation Optimized for Low Conduction and Switching Losses Avalanche Rated Short Circuit Capability Very High Current Capability Square RBSOA Advantages High Power Density Low Gate Drive Requirement Applications Power Inverters UPS Motor Drives SMPS PFC Circuits Battery Chargers Welding Machines Lamp Ballasts C C 3 IXYS CORPORATION, All Rights Reserved DS73A(/3)
MMIXXN6B3H Symbol Test Conditions Characteristic Values ( = 5 C Unless Otherwise Specified) Min. Typ. Max. g fs = 6A, = V, Note 7 5 S C ies 997 pf C oes = 5V, V GE = V, f = MHz 57 pf C res 83 pf Q g(on) 35 nc Q ge = A, V GE = 5V, =.5 S 98 nc Q gc 3 nc 8 ns t ri Inductive load, = 5 C ns = A, V GE = 5V.85 mj = 36V, R G = Ω 6 ns t fi Note 3 ns E off.9. mj 6 ns t ri Inductive load, = 5 C 9 ns = A, V GE = 5V. mj = 36V, R G = Ω 8 ns t fi Note 3 5 ns E off 3.5 mj R thjc. C/W R thcs.5 C/W Reverse Diode (FRED) Symbol Test Conditions Characteristic Values ( = 5 C Unless Otherwise Specified) Min. Typ. Max. V F I F = A, V GE = V, Note.5 V = 5 C.3 V I RM I 95 A F = A, V GE = V, = 5 C t rr -di F /dt = 5A/μs, V R = 3V ns R thjc.83 C/W Notes:. Pulse test, t 3μs, duty cycle, d %.. Part must be heatsunk for high-temp ES measurement. 3. Switching times & energy losses may increase for higher (Clamp), or R G. PRELIMANARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered,835,59,93,8 5,9,96 5,37,8 6,6,665 6,,65 B 6,683,3 6,77,585 7,5,73 B 7,57,338B by one or more of the following U.S. patents:,86,7 5,7,58 5,63,37 5,38,5 6,59,3 B 6,53,33 6,7,5 B 6,759,69 7,63,975 B,88,6 5,3,796 5,87,7 5,86,75 6,36,78 B 6,583,55 6,7,63 6,77,78 B 7,7,537
MMIXXN6B3H PIN: = Gate 5- = Emitter 3- = Collector 3 IXYS CORPORATION, All Rights Reserved
MMIXXN6B3H Fig.. Output Characteristics @ = 5ºC Fig.. Extended Output Characteristics @ = 5ºC V GE = 5V 3V V 35 3 V GE = 5V 3V V 5 V 5 V V 5 V 5 9V 9V 5 8V 6V...6.8...6.8.. 5 - Volts Fig. 3. Output Characteristics @ = 5ºC 7V 5V..8..6..8 - Volts V GE = 5V 3V V V V 9V 8V VCE(sat) - Normalized 5 8V 7V 6 8.5..3....9.8 V GE = 5V - Volts Fig.. Dependence of (sat) on Junction Temperature = A = 5A = A.7-5 -5 5 5 75 5 5 75 - Degrees Centigrade 6. Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage Fig. 6. Input Admittance 5.5 = 5ºC 8 5. 6.5 VCE - Volts. 3.5 3. = A 8 = 5ºC 5ºC - ºC.5 6..5 A 5A. 8 9 3 5 V GE - Volts 5 6 7 8 9 V GE - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
MMIXXN6B3H Fig. 7. Transconductance 6 Fig. 8. Gate Charge 9 8 = - ºC, 5ºC, 5ºC = 3V = A I G = ma g f s - Siemens 7 6 5 VGE - Volts 8 6 3 6 8 6 8 - Amperes 8 6 8 3 Q G - NanoCoulombs, Fig. 9. Capacitance 5 Fig.. Reverse-Bias Safe Operating Area Capacitance - PicoFarads, f = MHz C ies, C oes C res 5 5 5 3 35 - Volts 35 3 5 5 5 = 5ºC R G = Ω dv / dt < V / ns 5 5 3 35 5 5 55 6 65 - Volts (sat) Limit Fig.. Forward-Bias Safe Operating Area Fig.. Maximum Transient Thermal Impedance ID - Amperes 5µs µs ms Z(th)JC - ºC / W.. = 5ºC = 5ºC Single Pulse DC. V DS - Volts ms ms....... Pulse Width - Seconds 3 IXYS CORPORATION, All Rights Reserved
MMIXXN6B3H Eoff - MilliJoules 5..5. 3.5 3. Fig. 3. Inductive Switching Energy Loss vs. Gate Resistance E off - - - - = 5ºC, V GE = 5V = 36V = A 7 6 5 3 - MilliJoules Eoff - MilliJoules. 3.5 3..5 Fig.. Inductive Switching Energy Loss vs. Collector Current E off - - - - R G = Ω, V GE = 5V = 36V = 5ºC = 5ºC 5 3 - MilliJoules.5. = 5A..5 3 5 6 7 8 9 R G - Ohms.5 5 55 6 65 7 75 8 85 9 95 - Amperes. 3.5 Fig. 5. Inductive Switching Energy Loss vs. Junction Temperature E off - - - - R G = Ω, V GE = 5V = 36V 5 36 3 Fig. 6. Inductive Turn-off Switching Times vs. Gate Resistance t f i - - - - = 5ºC, V GE = 5V = 36V 6 5 Eoff - MilliJoules 3..5. = A = 5A 3 - MilliJoules t f i 8 = A = 5A 3.5 5 5 75 5 5 - Degrees Centigrade 6 3 5 6 7 8 9 R G - Ohms t f i 38 3 3 6 8 Fig. 7. Inductive Turn-off Switching Times vs. Collector Current = 5ºC = 5ºC t f i - - - - R G = Ω, V GE = 5V = 36V 8 6 8 6 t f i 5 35 3 5 5 Fig. 8. Inductive Turn-off Switching Times vs. Junction Temperature t f i - - - - R G = Ω, V GE = 5V = 36V = 5A = A 8 6 8 6 6 5 55 6 65 7 75 8 85 9 95 - Amperes 5 5 5 75 5 5 - Degrees Centigrade IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
MMIXXN6B3H 8 6 Fig. 9. Inductive Turn-on Switching Times vs. Gate Resistance t r i - - - - = 5ºC, V GE = 5V = 36V 5 5 95 Fig.. Inductive Turn-on Switching Times vs. Collector Current t r i - - - - R G = Ω, V GE = 5V = 36V 5 8 t r i 8 6 = A = 5A 85 75 65 55 t r i 8 6 = 5ºC = 5ºC 6 5 35 3 5 6 7 8 9 R G - Ohms 38 5 55 6 65 7 75 8 85 9 95 - Amperes 5 Fig.. Inductive Turn-on Switching Times vs. Junction Temperature 5 t r i 3 9 7 5 = A t r i - - - - R G = Ω, V GE = 5V = 36V 5 8 6 = 5A 3 38 5 5 75 5 5 - Degrees Centigrade 3 IXYS CORPORATION, All Rights Reserved
MMIXXN6B3H Fig.. Typ. Forward characteristics Fig. 3. Typ. Reverse Recovery Charge Q rr vs. -di F /dt 8 6 I F [A] 8 T VJ = 5ºC T VJ = 5ºC 8 6 Q rr [µc] T VJ = 5ºC V R = 3V A A 6 8 6 5A.5.5.5 3 3.5 V F - [V] 3 5 6 7 8 9 -di F / dt [A/µs] Fig.. Typ. Peak Reverse Current I RM vs. -di F /dt Fig. 5. Typ. Recovery Time t rr vs. -di F /dt 35 T VJ = 5ºC V R = 3V A 3 T VJ = 5ºC V R = 3V I RM [A] 8 A 5A 5 t rr [ns] 5 A 6 A 5A 3 5 6 7 8 9 di F /dt [A/µs] 5 3 5 6 7 8 9 -di F /dt [A/µs] 5 Fig. 6. Typ. Recovery Energy E rec vs. -di F /dt T VJ = 5ºC V R = 3V A E rec 3 A [mj] 5A 3 5 6 7 8 9 -di F /dt [A/µs] IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: MMIXXN6B3(9) 6-3-