METAL/CARBON-NANOTUBE INTERFACE EFFECT ON ELECTRONIC TRANSPORT

Similar documents
Graphene and Carbon Nanotubes

Carbon based Nanoscale Electronics

Introduction to Nanotechnology Chapter 5 Carbon Nanostructures Lecture 1

Quantum Confinement in Graphene

GRAPHENE NANORIBBONS TRANSPORT PROPERTIES CALCULATION. Jan VOVES

Calculating Electronic Structure of Different Carbon Nanotubes and its Affect on Band Gap

ELECTRONIC ENERGY DISPERSION AND STRUCTURAL PROPERTIES ON GRAPHENE AND CARBON NANOTUBES

Metallic: 2n 1. +n 2. =3q Armchair structure always metallic = 2

2 Symmetry. 2.1 Structure of carbon nanotubes

The calculation of energy gaps in small single-walled carbon nanotubes within a symmetry-adapted tight-binding model

Electronic transport in low dimensional systems

CHAPTER 6 CHIRALITY AND SIZE EFFECT IN SINGLE WALLED CARBON NANOTUBES

Transport through Andreev Bound States in a Superconductor-Quantum Dot-Graphene System

Quantized Electrical Conductance of Carbon nanotubes(cnts)

Carbon Nanotubes part 2 CNT s s as a toy model for basic science. Niels Bohr Institute School 2005

Ferromagnetism and Electronic Transport. Ordinary magnetoresistance (OMR)

Electrical conductance of carbon nanotori in contact with single-wall carbon nanotubes

Electron Interactions and Nanotube Fluorescence Spectroscopy C.L. Kane & E.J. Mele

NSF/ITR: LARGE-SCALE QUANTUM- MECHANICAL MOLECULAR DYNAMICS SIMULATIONS

Modeling and Performance analysis of Metallic CNT Interconnects for VLSI Applications

Metallic Nanotubes as a Perfect Conductor

Supporting Information Kinetics of Topological Stone-Wales Defect Formation in Single Walled Carbon Nanotubes

In today s lecture, we will cover:

Calculate The Density And The Potential Energy When Charge Particle Channeling In Single And Double Carbon Nanotubes

ᣂቇⴚ㗔 䇸䉮䊮䊏䊠䊷䊁䉞䉪䉴䈮䉋䉎 䊂䉱䉟䊮䋺ⶄว 㑐䈫㕖ᐔⴧ䉻䉟䊅䊚䉪䉴䇹 ᐔᚑ22ᐕᐲ ળ䇮2011ᐕ3 4ᣣ䇮 ੩ᄢቇᧄㇹ䉨䊞䊮䊌䉴 㗄 A02 ኒᐲ 㑐ᢙᴺℂ 䈮ၮ䈨䈒㕖ᐔⴧ 䊅䊉䉴䉬䊷䊦㔚 વዉ䉻䉟䊅䊚䉪䉴 ઍ ᄢᎿ ㆺ

Physics of Semiconductors

single-electron electron tunneling (SET)

Refering to Fig. 1 the lattice vectors can be written as: ~a 2 = a 0. We start with the following Ansatz for the wavefunction:

The Physics of Nanoelectronics

Kondo effect in multi-level and multi-valley quantum dots. Mikio Eto Faculty of Science and Technology, Keio University, Japan

Carbon nanotubes: Models, correlations and the local density of states

Spin and Charge transport in Ferromagnetic Graphene

Carbon Nanotubes (CNTs)

TRANSVERSE SPIN TRANSPORT IN GRAPHENE

Final exam. Introduction to Nanotechnology. Name: Student number:

Spin electronics at the nanoscale. Michel Viret Service de Physique de l Etat Condensé CEA Saclay France

chiral m = n Armchair m = 0 or n = 0 Zigzag m n Chiral Three major categories of nanotube structures can be identified based on the values of m and n

Novel Magnetic Properties of Carbon Nanotubes. Abstract

Scanning Tunneling Microscopy

introduction: what is spin-electronics?

The many forms of carbon

Field-induced low-temperature electronic specific heat of boron nitride nanotubes

Mesoscopic physics: From low-energy nuclear [1] to relativistic [2] high-energy analogies

physical Carbon Nanotubes Properties of Physical Properties of Carbon Nanotubes Downloaded from

Electrical and Optical Properties. H.Hofmann

Spin-Polarized Current in Coulomb Blockade and Kondo Regime

Conductivity of a disordered ferromagnetic monoatomic film

Fabrication and Measurement of Spin Devices. Purdue Birck Presentation

SUPPLEMENTARY INFORMATION

STM spectroscopy (STS)

3-month progress Report

Supplementary figures

I-V characteristics model for Carbon Nanotube Field Effect Transistors

Transparent Electrode Applications

From Graphene to Nanotubes

EXCITONS, PLASMONS, AND EXCITONIC COMPLEXES UNDER STRONG CONFINEMENT IN QUASI-1D SEMICONDUCTORS. Theory and Perspectives

Scanning gate microscopy and individual control of edge-state transmission through a quantum point contact

Numerical study of localization in antidot lattices

Clar Sextet Theory for low-dimensional carbon nanostructures: an efficient approach based on chemical criteria

Organic Electronic Devices

Introduction to Nanotechnology Chapter 5 Carbon Nanostructures Lecture 1

Charging and Kondo Effects in an Antidot in the Quantum Hall Regime

Outline. Introduction: graphene. Adsorption on graphene: - Chemisorption - Physisorption. Summary

Heterostructures and sub-bands

Giant magneto-conductance in twisted carbon nanotubes

Single Electron Tunneling Examples

Carbon Nanotubes in Interconnect Applications

Tuning magnetic anisotropy, Kondo screening and Dzyaloshinskii-Moriya interaction in pairs of Fe adatoms

Spin-orbit Effects in Semiconductor Spintronics. Laurens Molenkamp Physikalisches Institut (EP3) University of Würzburg

Kondo Physics in Nanostructures. A.Abdelrahman Department of Physics University of Basel Date: 27th Nov. 2006/Monday meeting

Material Science II. d Electron systems

Three-terminal quantum-dot thermoelectrics

Lectures: Condensed Matter II 1 Electronic Transport in Quantum dots 2 Kondo effect: Intro/theory. 3 Kondo effect in nanostructures

SPIN-POLARIZED CURRENT IN A MAGNETIC TUNNEL JUNCTION: MESOSCOPIC DIODE BASED ON A QUANTUM DOT

Theoretical Modeling of Tunneling Barriers in Carbon-based Molecular Electronic Junctions

Advanced Lab Course. Tunneling Magneto Resistance

Some pictures are taken from the UvA-VU Master Course: Advanced Solid State Physics by Anne de Visser (University of Amsterdam), Solid State Course

Physics and applications (I)

The Young s Modulus of Single-Walled Carbon Nanotubes

Carbon Nanotubes for Interconnect Applications Franz Kreupl, Andrew P. Graham, Maik Liebau, Georg S. Duesberg, Robert Seidel, Eugen Unger

MAGNETORESISTANCE PHENOMENA IN MAGNETIC MATERIALS AND DEVICES. J. M. De Teresa

Random Telegraph Signal in Carbon Nanotube Device

Optical & Transport Properties of Carbon Nanotubes II

Modified Becke-Johnson (mbj) exchange potential

Topological Insulators and Ferromagnets: appearance of flat surface bands

Saroj P. Dash. Chalmers University of Technology. Göteborg, Sweden. Microtechnology and Nanoscience-MC2

Mesoscopic physics: normal metals, ferromagnets, and magnetic semiconductors

Spin Superfluidity and Graphene in a Strong Magnetic Field

arxiv:cond-mat/ v1 7 Aug 1996

Magnetically Induced Field Effect in Carbon Nanotube Devices

Observation and modeling of single-wall carbon nanotube bend junctions

Title. I-V curve? e-e interactions? Conductance? Electrical Transport Through Single Molecules. Vibrations? Devices?

SUPPLEMENTARY INFORMATION

Beyond the Quantum Hall Effect

The BTE with a High B-field

GRAPHENE NANORIBBONS Nahid Shayesteh,

2 Title: "Ultrathin flexible electronic device based on tunneling effect: a flexible ferroelectric tunnel

Session Chair: Prof. Haiping Cheng (University of Florida) Dr. Lei Shen. National University of Singapore

SPINTRONICS. Waltraud Buchenberg. Faculty of Physics Albert-Ludwigs-University Freiburg

Manipulating and determining the electronic structure of carbon nanotubes

Transcription:

METAL/CARBON-NANOTUBE INTERFACE EFFECT ON ELECTRONIC TRANSPORT S. Krompiewski Institute of Molecular Physics, Polish Academy of Sciences, M. Smoluchowskiego 17, 60-179 Poznań, Poland

OUTLINE 1. Introductory remarks. 2. CNT/metal -electrode junction. 3. Giant magnetoresistance (GMR) in CNTs. 4. CNTs at magnetic fields. 5. Conclusions

C 1s 2 2s 2 2p 2 C r h sp 2 hybrid + free p z Metallic vs. semiconducting behaviour n m = 3 i, (i = integer) The wrapping vector R= (n,m) on the graphite sheet (equals to the circumference of the nanotube) determines the chirality. E.g.: R= (n, m) armchair, R=(n, 0) zigzag

Strong vs. weak confinement CB (T = 75 mk, P C = 0.15) Kondo features at V=0, (T = 75 mk, P C = 0.6) Interference patterns (T = 1.2 K, P C = 0.9) Nygård 2001 G max =4 e 2 / h G RT = G max P C /(2-P C ) 0 P C 1 (transmission probability)

Low resistive Comparison of the two-terminal resistance R at room temperature of CNT devices which were contacted with different metals: (a) Ti, (b) Au and (c) Pd. (e 2 /h) -1 = 25.8 kω Babic, Schönenberger 2004

Pd 0.3 Ni 0.7 contacts Sahoo et al. Appl.Phys.Lett 05 1/(e 2 /h)

Quality of contacts Geometry of M-SWCNT interfaces (end-contacted, side-contacted, embedded) First theoretical papers suggested that metal/carbon-based structures form bad high resistive contacts because of a mismatch of the involved Fermi vectors [Tesroff 99]. This conclusion was next refined and proven to be applicable only to graphene, but not to the CNTs [Delaney 99, Anantram 00] in general. In fact, it is well known that k vector conservation rules are obeyed only for directions where the entire system is translationally invariant (or at least, the metal /CNT contact extends over several unit cells), so in practice any amount of disorder would result in relaxing these rules. SK Xue et al.

4π/3a 0 π k F Al 2π/3a 0 π k F Au

Binding energies and wetting properties of M-SWCNT interfaces (Maiti, Chem, Phys. Lett.2004) Binding energy of a metal single atom to a SWCNT: E b (Au) < E b (Pd) < E b (Pt) For adlayers (films) the metal-metal binding within the metal film was found to be much stronger than that between the film and graphite. This, coupled, with the fact that Pt has substantially higher cohesive energy, led to the result that binding between Pt layer and graphite is actually smaller than that between Pd film and graphite. Existence of a critical cluster size such that metal nanoparticles smaller than such size will efficiently wet the graphite surface, while bigger particles will coalesce into even bigger clusters forming a weaker contact. Such critical cluster size was predicted to be smaller for Pt than for Pd Au Pd Pt

High transparency contacts (quasi ballistic regime) Liang, Nature 2001 L = 530 nm L = 220 nm

Krompiewski, et al. PRB 2002 L = 220 nm L = 530 nm

Methodology and α = L, R stand for left- and right-hand sides, σ denotes the spin and µ α = E F ± ev/2.

GMR = 1-R / R R field

K.Tsukagoshi, B. Alphenaar,.. Nature 1999 GMR ca. 9%, MWCNT + Co contacts s A single multi-walled carbon nanotube electrically contacted by Co. s s a, Scanning electron microscope image of the device, near the Co/MWNT junction. b Schematic diagram of the device

GMR = (R AP -R PA )/R AP = 2 P 1 P 2 /(1+P 1 P 2 ) For Co P = 34% expected GMR Julliere = 21 % Spin-polarization reduces as: exp(-l/l s ) measured GMR exp = 9% P reduced For L= 250 nm, one finds L s ~ 130nm

MWCNT + Ni 0.7 Pd 0.3 contacts Sahoo et al.. Appl Phys Lett. 2005 GMR 8 % 6 %

Fcc (111) 0.22 P = (N N ) / ( N + N ) P= 50% P= 0% 0.20 0.18 0.16 surface DOS 0.14 0.12 0.10 0.08 0.06 0.04 0.02 0.00-12 -10-8 -6-4 -2 0 2 4 E Energy band lineup: I II Electrode SWCNT 0 8 6 4 2 ε ε E N=0-2 -1 0 1 2 3 E E F

SWCNT 30nm-(8,8) 0.60 0.58 0.56 0.54 A B A B C C NOS 0.52 0.50 0.48 0.46 0.44 0.42 A B C 0.40 0 50 100 150 200 250 300 350 400 # atom

SWCNT (8,8), length = 30 nm 10 G[e 2 /h], GMR 9 8 7 6 5 4 3 0.3 0.2 0.1 0.0-0.1-0.2-0.1 0.0 0.1 G P 2 1 G AP GMR 0-1.0-0.5 0.0 0.5 1.0 Ε Ideal SWCNT, G/spin

Minimal geometrical model of the DWCNT S. K. et al.. PRB 2004 View of the (2,2)@(6,6) carbon nanotube sandwiched between two fcc(111) leads and detail of the contact region. What is shown consists of a few ferromagnetic electrode atoms with the nanotube forming the so-called extended molecule. The other parts of the electrodes (not shown) are infinite in all the directions.

angle between the π orbitals, d relative distance, δ = 0.45 Å, a = 3.34 Å (S. Roche 2001) SK, phys. stat. sol. (b), 2005 t int (i,j) = -(t/8) cos(θ ij ) exp [(d ij -a)/δ]

3.0 P=50%, 45(5,0)@39(8,8) 5 P= 50%, L outer = 39, L inner = 38, (3,3)@(8,8) 2.5 4 G [e 2 /h], GMR 2.0 1.5 1.0 0.5 G P G AP GMR G [e 2 /h], GMR 3 2 1 0 0.0-0.2-0.1 0.0 0.1 0.2 E [ t ] -1-0.2-0.1 0.0 0.1 0.2 E[ t ] F F F F

On-site (Anderson) disorder ε i ε i + ξ i, ξ i [-W/2, W/2] MWCNT SWCNT + disorder

Magnetic Field Peierls substitution t t exp[i (2π/Φ 0 )ξ] x y B parallel ξ = (Φ/C h ) x B perpendicular B[C h /(2π)] 2 y/ x [cos(2πx/c h )- cos(2π(x+ x)/c h )], x 0 ξ = B [C h /(2π)] y sin(2πx/c h ), x=0 Φ 0 =h/e, Φ=B π (C h /2π) 2, C h =a n 2 +m 2 +mn Zeeman splitting = ±gµ B B/2

G [e 2 / h] 3.5 3.0 2.5 2.0 1.5 1.0 P= 0%, L = 41, SWCNT(8,8) B parallel, s= B parallel, s= B parallel, total 0.5 0.0 0.0 0.5 1.0 1.5 Φ/Φ 0

4.0 G [e 2 /h] n=8 3.5 3.0 n=16 n=24 2.5 2.0 Parallel field 1.5 1.0 0.5 0.0 0.5 1.0 1.5 Φ/Φ 0 E F B 0 B=0

Ajiki-Ando Theory Light cone approximation : ( ) 3 1 1, 0, 3 1 (0) ) ( 0, 2 ) ( 3 2 ), ( ; ), ( ) ( 0 0 0 2 2 Φ Φ = = Φ Φ = Φ Φ = Φ Φ Φ = Φ + Φ = ± ± ν κ ν π κ κ n for E E t E n C n k n t k E h n band gap n is a subband index, ν= 0 for matal ±1 for semiconductor Experimental confirmations: Coskun et al., Science 2004; Zaric et al., Science 2004

CONCLUSIONS 1. Depending on the interface (increasing contact transparency): Coulomb, LL, Kondo, ballistic regimes 2. GMR: Ideally quasi periodic with a period scaling as 1/CNT-length critically dependent on weather or not the inner tubes of the MWCNTs are contacted to the electrodes, MWCNT outer SWCNT+disorder 3. Magnetic field: At parallel magnetic field, clear Aharonov-Bohm oscillations are observed also in the presence of electrodes (characteristic features of the A-A theory survive) The doping effect from the electrodes shows up.