Wx6-io hyristor Module = M I = 7 =,8 C Controlling ~ full-controlled Part number Wx6-io Backside: isolated 4 7 6 9 Features / dvantages: pplications: Package: --Pack hyristor for line frequency Planar passivated chip Long-term stability Direct Copper Bonded lo3-ceramic Line rectifying /6 Hz Softstart C motor control DC Motor control Power converter C power control Lighting and temperature control Isolation oltage: 36 ~ Industry standard outline ohs compliant Soldering pins for PCB mounting Height: 7 mm Base plate: DCB ceramic educed weight dvanced power cycling erms Conditions of usage: he data contained in this product data sheet is exclusively intended for technically trained staff. he user will have to evaluate the suitability of the product for the intended application and the completeness of the product data with respect to his application. he specifications of our components may not be considered as an assurance of component characteristics. he information in the valid application- and assembly notes must be considered. Should you require product information in excess of the data given in this product data sheet or which concerns the specific application of your product, please contact the sales office, which is responsible for you. Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact the sales office, which is responsible for you. Should you intend to use the product in aviation, in health or live endangering or life support applications, please notify. For any such application we urgently recommend - to perform joint risk and quality assessments; - the conclusion of quality agreements; - to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures. IXYS all rights reserved Data according to IEC 6747and per semiconductor unless otherwise specified c
Wx6-io ectifier Symbol I I Definition Conditions = = = C J = C atings typ. max. 3 forward voltage drop I = 4 = C, I SM/DSM M/DM /D MS I = I = I = 8 4 8 C= 8 C = C J = C J threshold voltage J = C,8 for power loss calculation only r slope resistance mω thermal resistance junction to case,9 K/W thjc P tot total power dissipation = C W P GM P G J J = C I SM max. forward surge current t = ms; ( Hz), sine J = 4 C t = 8,3 ms; (6 Hz), sine = C J junction capacitance = 4 f = MHz = C 64 max. gate power dissipation t P= 3 µs C = C average gate power dissipation t = ms; ( Hz), sine t = 8,3 ms; (6 Hz), sine J C min.,6,8,7 t = 3 µs P J = C I²t value for fusing t = ms; ( Hz), sine = 4 C (di/dt) cr average forward current MS forward current per phase critical rate of rise of current 8 sine t = 8,3 ms; (6 Hz), sine t = ms; ( Hz), sine t = 8,3 ms; (6 Hz), sine J = C = = = C J J = 7 6, Unit µ m k²s k²s J pf J = C; f = Hz t P= µs; di G /dt =,4 /µs; IG =,4; = ⅔ repetitive, I = (dv/dt) critical rate of rise of voltage = ⅔ DM J = C cr max. non-repetitive reverse/forward blocking voltage max. repetitive reverse/forward blocking voltage reverse current, drain current /D /D thch thermal resistance case to heatsink,3 GK = ; method (linear voltage rise) G gate trigger voltage = 6 = C D DM J 4 J = -4 C 6 44 47,3,3 97 94 ²s ²s W W W /µs /µs /µs, I G gate trigger current D = 6 J = C m J = -4 C,6 m GD gate non-trigger voltage = ⅔ J = C, D DM I GD gate non-trigger current m I L latching current t µs p = J = C 4 m IG =,4; di G /dt =,4 /µs I H holding current D = 6 GK = J = C m t gd gate controlled delay time = ½ J = C µs D DM IG =,4; di G /dt =,4/µs non-repet., I = t q turn-off time = ; I = ; = ⅔ DM J = C µs di/dt = /µs dv/dt = /µs t p = µs 7 K/W IXYS all rights reserved Data according to IEC 6747and per semiconductor unless otherwise specified c
Wx6-io Package atings Symbol Definition Conditions min. typ. max. Unit I MS MS current per terminal J virtual junction temperature -4 C op operation temperature -4 C Weight M D dspp/pp dspb/pb --Pack stg storage temperature -4 C ISOL mounting torque creepage distance on surface striking distance through air isolation voltage t = second t = minute terminal to terminal terminal to backside /6 Hz, MS; I ISOL m 6,, 36 3 37, g Nm mm mm Date Code Prod. Index Part Number (yp) Lot No.: yyww Data Matrix: yp (-9), DC+Prod.Index (-), FK# (6-3) leer (33), lfd.# (33-36) Ordering Standard Ordering Number Marking on Product Delivery Mode Quantity Code No. Wx6-io Wx6-io Blister 4 474 Equivalent Circuits for Simulation * on die level = C I hyristor J max threshold voltage,8 max slope resistance * 8, mω IXYS all rights reserved Data according to IEC 6747and per semiconductor unless otherwise specified c
Wx6-io Outlines --Pack, +, 3,6 ±, 6 max., 3,6 (see ) x4 * = = *4 *7 * *7 *4, 6 7 8 3 9 4 3 7 ±, 3 63,,7 ±,3,7 ±,3 4 Ø, Ø 6,, 6 * Ø,, * 6, *4 *7 * *7 *4,7 ±,3,7 ±,3 Marking on product ufdruck der ypenbezeichnung * Ø,8 ±, emarks / Bemerkungen:. Nominal distance mounting screws on heat sink: mm / Nennabstand Befestigungsschrauben auf Kühlkörper: mm. General tolerance / llgemeintoleranz : DIN ISO 768 --c 3. Surface treatment of pins: tin plated (Sn) in hot dip / Oberflächenbehandlung der Pins: verzinnt (Sn) im auchbad +, 4 7 6 9 IXYS all rights reserved Data according to IEC 6747and per semiconductor unless otherwise specified c
Wx6-io hyristor 8 7 6 I 4 3 J = C J = C 4 I SM 3 Hz, 8% M J = 4 C 4 I t 3 [ s] = J = 4 C J = 4 C J = 4 C..... [] Fig. Forward characteristics.. t [s] Fig. Surge overload current I SM : crest value, t: duration 3 4 6 7 8 9 t [ms] Fig. 3 I t versus time (- s) G [] : I G, J = C : I G, J = C 3: I G, J = -4 C 3 4 6 t gd [μs] typ. lim. J = C 4 4 3 3 I M DC 8 sin rect. 6 rect. 3 rect. I GD, J = C 4: P G =. W : P GM = W 6: P GM = W. I G [m] Fig. 4 Gate voltage & gate current I G Fig. Gate controlled delay time t gd 7 case [ C] Fig. 6 Max. forward current at case temperature... Z thjk.7 Z thjk [K/W] t i [s]..3.3..94.9.6.4 [K/W]. thjk [K/W] d:. 8..7.3 6.37 3.... t [s] Fig. 7 ransient thermal impedance junction to heatsink (per thyristor) I M 3 J = C K = 8 C.. t [s] Fig. 8 ated MS current vs. time (36 conduction) IXYS all rights reserved Data according to IEC 6747and per semiconductor unless otherwise specified c
Wx6-io ectifier 6 P tot [W] 8 thk K/W... 3 4 Circuit W3C x Wx6 3 4 6 I MS 7 [ C] Fig. 9 Load current capability for two phase C controller 6 P tot 8 [W] thk K/W... 3 4 Circuit BC x Wx6 3 4 6 I M 7 [ C] Fig. Power dissipation vs. direct output current and ambient temperature cyclo converter, four quadrant operation IXYS all rights reserved Data according to IEC 6747and per semiconductor unless otherwise specified c