FSA646. 2:1 MIPI D-PHY (2.5 Gbps) 4-Data Lane & C-PHY (2.5 Gsps) 3-Data Lane Switch

Similar documents
Is Now Part of To learn more about ON Semiconductor, please visit our website at

74AC00, 74ACT00 Quad 2-Input NAND Gate

74VHC08 Quad 2-Input AND Gate

NSVJ6904DSB6. Advance Information N-Channel JFET 25 V, 20 to 40 ma, 40 ms, Dual

BSS84 P-Channel Enhancement Mode Field-Effect Transistor

BAT54XV2 Schottky Barrier Diode

S3A - S3N General-Purpose Rectifiers

MMBD1201 / MMBD1202 / MMBD1203 / MMBD1204 / MMBD1205 Small Signal Diodes

FPF1007-FPF1009 IntelliMAX Advanced Load Products

2N7002DW N-Channel Enhancement Mode Field Effect Transistor

NCV8450, NCV8450A. Self-Protected High Side Driver with Temperature and Current Limit

Features. T A =25 o C unless otherwise noted

Is Now Part of To learn more about ON Semiconductor, please visit our website at

74LCX08 Low Voltage Quad 2-Input AND Gate with 5V Tolerant Inputs

FFSH2065BDN-F085. Silicon Carbide Schottky Diode, 650 V, 20 A

BC546 / BC547 / BC548 / BC549 / BC550 NPN Epitaxial Silicon Transistor

FFSH30120A. Silicon Carbide Schottky Diode 1200 V, 30 A

FFSH40120ADN-F155 Silicon Carbide Schottky Diode

PN2907 / MMBT2907 PNP General-Purpose Transistor

Features. Low gate charge. Symbol Parameter Q1 Q2 Units. Pulsed 8 8 Power Dissipation for Single Operation (Note 1a) (Note 1b) 0.

2N7000 / 2N7002 / NDS7002A N-Channel Enhancement Mode Field Effect Transistor

FDV301N Digital FET, N-Channel

FFS50120AF-DIE. Silicon Carbide Schottky Diode 1200 V, 50 A

Is Now Part of To learn more about ON Semiconductor, please visit our website at

NLSV2T Bit Dual-Supply Inverting Level Translator

V N (8) V N (7) V N (6) GND (5)

Features. Symbol Parameter N-Channel P-Channel Units. Drain-Source Voltage, Power Supply Voltage V V GSS. Gate-Source Voltage, 8-8 V I D

Is Now Part of To learn more about ON Semiconductor, please visit our website at

RS1A - RS1M Fast Rectifiers

FDG6322C Dual N & P Channel Digital FET

FFSH20120ADN-F085. Silicon Carbide Schottky Diode 1200 V, 20 A

FGH40T120SQDNL4. IGBT - Ultra Field Stop. 40 A, 1200 V V CEsat = 1.7 V E off = 1.1 mj

Is Now Part of. To learn more about ON Semiconductor, please visit our website at

FSUSB242. FSUSB242 Type-C USB Port Protection Switch

Is Now Part of To learn more about ON Semiconductor, please visit our website at

MMBT2369A NPN Switching Transistor

NGTB15N60S1EG. IGBT - Short-Circuit Rated. 15 A, 650 V V CEsat = 1.5 V

NGTG50N60FLWG IGBT. 50 A, 600 V V CEsat = 1.65 V

FSA1208 Low-Power, Eight-Port, High-Speed Isolation Switch

FSA2567 Low-Power, Dual SIM Card Analog Switch

NGTB40N60FLWG IGBT. 40 A, 600 V V CEsat = 1.85 V

FFSP0665A/D. Silicon Carbide Schottky Diode 650 V, 6 A Features. FFSP0665A Silicon Carbide Schottky Diode. Description.

FDC3535. P-Channel Power Trench MOSFET -80 V, -2.1 A, 183 mω. FDC3535 P-Channel Power Trench MOSFET

NDF08N50Z, NDP08N50Z. N-Channel Power MOSFET. Low ON Resistance Low Gate Charge 100% Avalanche Tested These Devices are Pb Free and are RoHS Compliant

FFSH15120A/D. Silicon Carbide Schottky Diode 1200 V, 15 A Features. FFSH15120A Silicon Carbide Schottky Diode. Description.

NGTB30N120LWG IGBT. 30 A, 1200 V V CEsat = 1.75 V E off = 1.0 mj

FDS V P-Channel PowerTrench MOSFET

MC74LV594A. 8-Bit Shift Register with Output Register

NGTB25N120LWG IGBT. 25 A, 1200 V V CEsat = 1.85 V E off = 0.8 mj

SN74LS157MEL. Quad 2 Input Multiplexer LOW POWER SCHOTTKY

NXH160T120L2Q1PG, NXH160T120L2Q1SG. Q1PACK Module

Is Now Part of To learn more about ON Semiconductor, please visit our website at

NL17SV16. Ultra-Low Voltage Buffer

FFSD08120A/D. Silicon Carbide Schottky Diode 1200 V, 8 A Features. FFSD08120A Silicon Carbide Schottky Diode. Description.

NDT3055L N-Channel Logic Level Enhancement Mode Field Effect Transistor

2N4918-2N4920 Series. Medium-Power Plastic PNP Silicon Transistors 3.0 A, V, 30 W GENERAL PURPOSE POWER TRANSISTORS

Is Now Part of To learn more about ON Semiconductor, please visit our website at

Elerical Characteristics T C = 5 C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BS Drain-Source Break

Is Now Part of To learn more about ON Semiconductor, please visit our website at

FDMC7692 N-Channel Power Trench MOSFET 30 V, 13.3 A, 8.5 m

NGTB20N120IHRWG. 20 A, 1200 V V CEsat = 2.10 V E off = 0.45 mj

NGTB40N135IHRWG. 40 A, 1350 V V CEsat = 2.40 V E off = 1.30 mj

NLSV22T244. Dual 2-Bit Dual-Supply Non-Inverting Level Translator

Is Now Part of To learn more about ON Semiconductor, please visit our website at

FST Bit Bus Switch

NGTB40N120FL3WG. IGBT - Ultra Field Stop. 40 A, 1200 V V CEsat = 1.7 V E off = 1.1 mj

SN74LS125A, SN74LS126A. Quad 3 State Buffers LOW POWER SCHOTTKY. LS125A LS126A TRUTH TABLES ORDERING INFORMATION

NGTG25N120FL2WG. IGBT - Field Stop II. 25 A, 1200 V V CEsat = 2.0 V E off = 0.60 mj

NTJD4105C. Small Signal MOSFET. 20 V / 8.0 V, Complementary, A / A, SC 88

SN74LS157MEL LOW POWER SCHOTTKY

Is Now Part of To learn more about ON Semiconductor, please visit our website at

NL17SH02. Single 2-Input NOR Gate

2N4123, 2N4124. General Purpose Transistors. NPN Silicon. Pb Free Packages are Available* Features MAXIMUM RATINGS

MJW18020G. NPN Silicon Power Transistors High Voltage Planar 30 AMPERES 1000 VOLTS BV CES 450 VOLTS BV CEO, 250 WATTS

SN74LS145MEL. 1 of 10 Decoder/Driver Open Collector LOW POWER SCHOTTKY

onlinecomponents.com

MUR3020PTG SUR83020PTG MUR3040PTG MUR3060PTG SUR83060PTG. SWITCHMODE Power Rectifiers ULTRAFAST RECTIFIERS 30 AMPERES, VOLTS

MC100LVE VНECL 16:1 Multiplexer

2N5401. PNP Silicon. These are Pb Free Devices* Features. MAXIMUM RATINGS THERMAL CHARACTERISTICS MARKING DIAGRAM

NTF3055L175. Power MOSFET 2.0 A, 60 V, Logic Level. N Channel SOT AMPERES, 60 VOLTS R DS(on) = 175 m

MMBZ5221BLT1 Series. Zener Voltage Regulators. 225 mw SOT 23 Surface Mount

NL17SZ08. Single 2-Input AND Gate

SN74LS132MEL. Quad 2 Input Schmitt Trigger NAND Gate LOW POWER SCHOTTKY

NGTB40N120FL2WG. IGBT - Field Stop II. 40 A, 1200 V V CEsat = 2.0 V E off = 1.10 mj

BC847BPDXV6T5G. SBC847BPDXV6 NPN/PNP Dual General Purpose Transistor

2N5655G, 2N5657G. Plastic NPN Silicon High-Voltage Power Transistors 0.5 AMPERE POWER TRANSISTORS NPN SILICON VOLTS, 20 WATTS

LOW POWER SCHOTTKY. MARKING DIAGRAMS GUARANTEED OPERATING RANGES ORDERING INFORMATION. SN74LS37xN AWLYYWW PDIP 20 N SUFFIX CASE 738

LOW POWER SCHOTTKY. ESD > 3500 Volts. GUARANTEED OPERATING RANGES ORDERING INFORMATION V CC 8 7 GND

MMBZ5221BLT1 Series. Zener Voltage Regulators. 225 mw SOT 23 Surface Mount

BAS19LT1G, BAS20LT1G, BAS21LT1G, BAS21DW5T1G. High Voltage Switching Diode HIGH VOLTAGE SWITCHING DIODE

BC337, BC337-25, BC Amplifier Transistors. NPN Silicon. These are Pb Free Devices. Features MAXIMUM RATINGS

NCS1002A. Constant Voltage / Constant Current Secondary Side Controller

SN74LS147, SN74LS Line to 4 Line and 8 Line to 3 Line Priority Encoders LOW POWER SCHOTTKY

MC74AC132, MC74ACT132. Quad 2 Input NAND Schmitt Trigger

NE522 High Speed Dual Differential Comparator/Sense Amp

2N3903, 2N3904. NPN Silicon. Pb Free Packages are Available* Features. MAXIMUM RATINGS. THERMAL CHARACTERISTICS (Note 1)

74HC of 8 Decoder/ Demultiplexer. High Performance Silicon Gate CMOS

BC487, BC487B. High Current Transistors. NPN Silicon. Pb Free Packages are Available* Features. MAXIMUM RATINGS MARKING DIAGRAM

74HCT245. Octal 3-State Noninverting Bus Transceiver with LSTTL-Compatible Inputs. High-Performance Silicon-Gate CMOS

BC846, BC847, BC848 Series. General Purpose Transistors. NPN Silicon

Transcription:

2:1 MIPI D-PHY (2. Gbps) 4-Data Lane & C-PHY (2. Gsps) 3-Data Lane Switch Description The FSA646 is a four data lane D PHY or three data lane C PHY, MIPI switch. This single pole, double throw (SPDT) switch is optimized for switching between two high speed or low power MIPI sources. The FSA646 is designed for the MIPI specification and allows connection to a SCI or DSI module. Features Switch Type: SPDT (10x) Signal Types: MIPI, D PHY & C PHY V CC : 1. to.0 V Input Signals: 0 to 1.3 V R ON : 6 Typical HS MIPI 6 Typical LP MIPI R ON : 0.1 Typical LP & HS MIPI R ON_FLAT : 0.9 Typical LP & HS MIPI I CCZ : 1 A Maximum I CC : 32 A Typical O IRR : 24 db Typical Bandwidth: 4.1 GHz Typical Xtalk: 30 db Typical C ON : 1. pf Typical Skew (P), Skew (O): 6 ps Typical This is a Pb Free Device WLCSP36, 2.43x2.43x0.4 CASE 67WJ GS KK X Y Z (Bottom View) MARKING DIAGRAM GSKK XYZ = Specific Device Code = Assembly Lot = Year = Work Week = Assembly Location ORDERING INFORMATION See detailed ordering and shipping information on page 7 of this data sheet. Applications Cellular Phones, Smart Phones Tablets Laptops Displays Semiconductor Components Industries, LLC, 2017 October, 2018 Rev. 1 1 Publication Order Number: FSA646/D

Figure 1. Typical D PHY Application PIN DESCRIPTIONS Figure 2. Analog Symbol 2

PIN DEFINITIONS Figure 3. Top Through View Figure 4. Recommended C PHY Configuration 3

Table 1. BALL TO PIN MAPPINGS Ball Pin Name Ball Pin Name Ball Pin Name A1 V CC C1 DB3N E1 DB1N A2 GND C2 DB3P E2 DB1P A3 DA4N C3 NC E3 DA1N A4 DA4P C4 NC E4 DA1P A /OE C D3N E D1N A6 SEL C6 D3P E6 D1P B1 DB4N D1 DB2N F1 CLKBN B2 DB4P D2 DB2P F2 CLKBP B3 DA3N D3 DA2N F3 CLKAN B4 DA3P D4 DA2P F4 CLKAP B D4N D D2N F CLKN B6 D4P D6 D2P F6 CLKP TRUTH TABLE SEL /OE Function LOW LOW CLK P = CLKA P, CLK N = CLKA N, Dn(P/N) = DAn(P/N) HIGH LOW CLK P = CLKB P, CLK N = CLKB N, Dn(P/N) = DBn(P/N) X HIGH Clock and Data Ports High Impedance ABSOLUTE MAXIMUM RATINGS Symbol Parameter Min. Max. V CC Supply Voltage 0. 6.0 V V CNTRL DC Input Voltage (/OE, SEL) (Note 1) 0. V CC V V SW DC Switch I/O Voltage (Note 1,2) 0.3 1.8 V I IK DC Input Diode Current 0 ma I OUT DC Output Current 2 ma T STG Storage Temperature 6 +10 C ESD Human Body Model, JEDEC: JESD22 A114 All Pins 2.0 kv Charged Device Model, JEDEC: JESD22 C101 1.0 IEC 61000 4 2 System Contact 8.0 Air Gap 1.0 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. The input and output negative ratings may be exceeded if the input and output diode current ratings are observed. 2. V SW refers to analog data switch paths. RECOMMENDED OPERATING CONDITIONS Symbol Parameter Min. Max. V CC Supply Voltage 1..0 V V CNTRL Control Input Voltage (SEL, /OE) (Note 3) 0 V CC V V SW Switch I/O Voltage (CLKn, Dn, CLKAn, CLKBn, Dan, DBn) HS Mode 0 0.3 V LS Mode 0 1.3 V T A Operating Temperature 40 +8 C Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond the Recommended Operating Ranges limits may affect device reliability. 3. The control inputs must be held HIGH or LOW; they must no float. 4

DC AND TRANSIENT CHARACTERISTICS (T A = 2 C unless otherwise specified) Symbol Parameter Conditions V CC (V) V IK Clamp Diode Voltage (/OE, SEL) T A = 40 to +8 C Min. Typ. Max. I IN = 18 ma 1. 1.2 0.6 V V IH Input Voltage High SEL, /OE 1. to 1.3 V V IL Input Voltage Low SEL, /OE 1. to 0. V I IN I NO(OFF) I NC(OFF) I A(ON) I OFF Control Input Leakage (/OE, SEL) Off Leakage Current of Port CLKAn, Dan, CLKBn and DBn ON Leakage Current of Common Ports (CLKn, Dn) Power Off Leakage Current (All I/O Ports) V CNTRL = 0 to V CC 0. 0. A V SW = 0.0 DATA 1.3 V 0. 0. A V SW = 0.0 DATA 1.3 V 0. 0. A V SW = 0.0 or 1.3 V 0 0. 0. A I OZ Off State Leakage V SW = 0.0 DATA 1.3 V /OE = High 0. 0. A R ON_MIPI_HS Switch On Resistance for HS MIPI Applications CLKB, DB N or DA N = 0.2 V 1. 6 2. R ON_MIPI_LP Switch On Resistance for LP MIPI Applications CLKB, DB N or DA N = 1.2 V 1. 6 2. R ON_MIPI_HS On Resistance Matching Between HS MIPI Channels CLKB, DB N or DA N = 0.2 V 1. 0.1 2. R ON_MIPI_LP On Resistance Matching Between LP MIPI Channels CLKB, DB N or DA N = 1.2 V 1. 0.1 2. R ON_FLAT_MIPI_HS On Resistance Flatness for HS MIPI Signals CLKB, DB N or DA N = 0 to 0.3 V 1. 0.9 2. R ON_FLAT_MIPI_LP On Resistance Flatness for LP MIPI Signals CLKB, DB N or DA N = 0 to 1.3 V 1. 0.9 2. I CC Quiescent Supply Current (Includes Change Pump) V SEL = 0 or V CC, I OUT = 0, /OE = 0 V 30 A

DC AND TRANSIENT CHARACTERISTICS (T A = 2 C unless otherwise specified) (continued) T A = 40 to +8 C Symbol Parameter Conditions V CC (V) Min. Typ. Max. I CCZ Quiescent Supply Current (High Impedance) V SEL = 0 or V CC, I OUT = 0, /OE = 0 V 1 A I CCT Increase in I CC Current Per Control Voltage and V CC V SEL = 0 or V CC, /OE = 1. V 1 A 4. Measured by the voltage drop between A and B pins at the indicated current through the switch. On resistance is determined by the lower of the voltage on the two (A or B ports). AC ELECTRICAL CHARACTERISTICS (V CC = V and T A = 2 C unless otherwise specified) Symbol Parameter Conditions V CC (V) t INIT t EN Initialization Time V CC to Output (Note ) Enable Time /OE to Output T A = 40 to +8 C Min. Typ. Max. 1. to 60 s 1. to 60 10 s t DIS Disable Time /OE to Output 1. to 3 20 ns t ON Turn On Time SEL to Output 1. to 30 1100 ns t OFF Turn Off Time SEL to Output 1. to 12 800 ns t BBM Break Before Make Time 1. to 0 40 ns t PD O IRR X TALK Propagation Delay (Note ) Off Isolation for MIPI (Note ) Crosstalk for MIPI (Note ) C L = 0 pf, R L = 0 1. to 30 67 100 ps R L = 0, f = 120 MHz, 1. to 24 db /OE = HIGH, V SW = 0.2 V PP R L = 0, f = 120 MHz, 1. to 30 2 db SEL = High, V SW = 0.2 V PP R L = 0, f = 120 MHz, 30 2 SEL = Low, V SW = 0.2 V PP BW 3 db Bandwidth (Note ) V SW = 0.2 V PP 1. to 2. 4.1 GHz IL. Guaranteed by characterization. Insertion Loss at 70 MHz (Note ) 1. to 0.7 db V SW = 0.2 V PP HIGH SPEED RELATED AC ELECTRICAL CHARACTERISTICS Symbol Parameter Conditions V CC (V) t SK(P) t SK(O) HS Mode Skew of Opposite Transitions of the Same Output (Note 6) HS Mode Skew of Channel to Channel Single Ended Skew (Note 6) 6. Guaranteed by characterization. V SW = 0.3 V V SW = 0.3 V T A = 40 to +8 C Min. Typ. Max. 1. to 6 ps 1. to 6 ps 6

CAPACITANCE Symbol Parameter Conditions C IN Control Pin Input Capacitance (Note 7) T A = 40 to +8 C Min. Typ. Max. V CC = 0 V, f = 1 MHz 2.1 pf C ON On Capacitance (Note 7) V CC = V, /OE = 0 V, f = 120 MHz (in HS common value) C OFF On Capacitance (Note 7) V CC and /OE = V, f = 120 MHz (both sides in HS common value) 1. 0.9 7. Guaranteed by characterization. The table below pertains to the Packaging information on the following page. ORDERING INFORMATION Part Number Top Marking Package Top Mark FSA646UCX 40 to +8 C 36 Ball WLCSP, Non JEDEC 2.43 x 2.43 mm, 0.4 mm Pitch GS 7

MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS WLCSP36 2.43x2.43x0.488 CASE 67WJ ISSUE A DATE 03 OCT 2018 DOCUMENT NUMBER: DESCRIPTION: 98AON87484G WLCSP36 2.43x2.43x0.488 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped CONTROLLED COPY in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the ed States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. Semiconductor Components Industries, LLC, 2018

ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the ed States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor s product/patent coverage may be accessed at /site/pdf/patent Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. Typical parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor 1921 E. 32nd Pkwy, Aurora, Colorado 80011 USA Phone: 303 67 217 or 800 344 3860 Toll Free USA/Canada Fax: 303 67 2176 or 800 344 3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800 282 98 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 ON Semiconductor Website: Order Literature: http:///orderlit For additional information, please contact your local Sales Representative