HiPerFAST TM IGBT ISOPLUS7 TM Lightspeed TM Series (Electrically Isolated Back Surface) IXGR 6N6C IXGR 6N6CD S = 6 V = 7 A (sat) =.7 V t fi(typ) = ns Preliminary Data Sheet IXGR_C IXGR_CD Symbol Test Conditions Maximum Ratings S = C to C 6 V V CGR = C to C; E = MΩ 6 V V GES Continuous ± V V GEM Transient ± V = C (limited by leads) 7 A = C 8 A = C (IXGR6N6CD) 9 A M = C, ms A SSOA V GE = V, = C, = Ω M = A (RBSOA) Clamped inductive load @ 6 V P C = C W -... + C M C T stg -... + C V ISOL /6 Hz RMS, t = m V Weight g Maximum lead temperature for soldering C.6 mm (.6 in.) from case for s Symbol Test Conditions Characteristic Values ( = C, unless otherwise specified) Min. Typ. Max. BS = ma, V GE = V 6 V V GE(th) = µa, = V GE.. V ISOPLUS7 (IXGR) G = Gate E = Emitter Features C = Collector (ISOLATED TAB) DCB Isolated mounting tab Meets TO-7AD package Outline High current handling capability Latest generation HDMOS TM process MOS Gate turn-on - drive simplicity Applications Uninterruptible power supplies (UPS) Switched-mode and resonant-mode power supplies AC motor speed control DC servo and robot drives DC choppers Advantages C E Easy assembly High power density Very fast switching speeds for high frequency applications ES = S GR6N6C µa V GE = V GR6N6CD 6 µa I GES = V, V GE = ± V ± na (sat) = A, V GE = V = C..7 V Note = C. V IXYS All rights reserved DS99D(/)
IXGR 6N6C IXGR 6N6CD Symbol Test Conditions Characteristic Values ( = C, unless otherwise specified) Min. Typ. Max. g fs = A; = V, S Note C ies 9 pf C oes = V, V GE = V, f = MHz 6N6C 8 pf 6N6CD pf C res 97 pf ISOPLUS 7 Outline Q g nc Q ge = A, V GE = V, =. S 8 nc Q gc nc t d(on) Inductive load, = C 8 ns t ri = A, V GE = V ns t d(off) = V, = R off =. Ω 9 ns t fi ns.9.8 mj t d(on) 8 ns Inductive load, = C t ri ns I E C = A, V GE = V on.6 mj V t CE = V, = R off =. Ω d(off) ns t fi 8 ns.9 mj R thj-dcb (Note ). K/W R thjc (Note ). K/W R thcs. K/W Reverse Diode (FRED) Characteristic Values ( = C, unless otherwise specified) Symbol Test Conditions min. typ. max. V F = 6 A, V GE = V,. V Note = C.9 I RM = 6 A, V GE = V, -di F = A/µ = C 8. A = V t rr = A; -di = A/ms; = V ns R thjc.8 K/W Note : Pulse test, t µs, duty cycle % : R thj-dcb is the thermal resistance junction-to-internal side of DCB substrate : R thjc is the thermal resistance junction-to-external side of DCB substrate IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more,8,7,9,8,,796,6,7,7,8,8, 6,,6B 6,6,66 6,, 6,8, of the following U.S. patents:,8,9,88,6,7,8,9,96,87,7,86,7 6,6,78B 6,9,B 6,6,78B 6,68,
IXGR 6N6C IXGR 6N6CD Fig.. Output Characteristics Fig.. Extended Output Characteristics @ Deg. C @ deg. C 9 8 7 6 V V 9V 7V V 7 7 V V 9V 7V V........ Fig.. Output Characteristics @ Deg. C Fig.. Temperature Dependence of (sat) 9 8 7 6 V V 9V 7V V V C E (sat) - Normalized...9.8.7.6 = A = A = A..... 7 - Degrees Centigrade Fig.. Collector-to-Emitter Voltage vs. Gate-to-Emiiter voltage Fig. 6. Input Admittance. T J = ºC 7.. = A A 7 = ºC ºC. A -ºC 6 7 8 9 V GE... 6 6. 7 7. 8 8. V GE IXYS All rights reserved
IXGR 6N6C IXGR 6N6CD Fig. 7. Transconductance Fig. 8. Dependence of on g f s - Siemens 9 8 7 6 = -ºC ºC ºC - millijoules 6 = ºC V GE = V = V = A = 7A = A 7 7 = A 6 8 6 - Ohms Fig. 9. Dependence of on I c Fig.. Dependence of on Temperature - MilliJoules = Ω. = Ω - - - - - V C E = V = ºC = ºC - millijoules = Ω = Ω - - - - - V C E = V = A = 7A = A 6 7 8 9 = A 7 - Degrees Centigrade Fig.. Gate Charge Fig.. Capacitance 9 6 V C E = V = A I G = ma Capacitance - pf f = MHz Cies Coes Cres 6 8 Q G - nanocoulombs IXYS reserves the right to change limits, test conditions, and dimensions.
IXGR 6N6C IXGR 6N6CD Fig.. Maximum Transient Thermal Resistance... R( t h ) J C - ºC / W........ Pulse Width - milliseconds IXYS All rights reserved
IXGR 6N6C IXGR 6N6CD 6 A nc = C = V 8 A = C = V 8 6 = C = C = C Q r =A = 6A = A I RM 6 =A = 6A = A V A/µs 6 A/µs 8 V F -di F -di F Fig.. Forward current versus V F Fig.. Reverse recovery charge Q r versus -di F Fig. 6. Peak reverse current I RM versus -di F K f... t rr ns =A = 6A = A = C = V V FR V t fr V FR.6 µs..8 t fr. I RM Q r. 8 C 6 9 8 6 A/µs 8 -di F. = C = 6A. 6 A/µs 8 di F Fig. 7. Dynamic parameters Q r, I RM Fig. 8. Recovery time t rr versus -di F Fig. 9. Peak forward voltage V FR and versus t fr versus di F K/W. Z thjc. Constants for Z thjc calculation: i R thi (K/W) t i (s).7...9.887.7.8.99....... s t Fig.. Transient thermal resistance junction to case IXYS reserves the right to change limits, test conditions, and dimensions. DSEP x6-6a