Fast IGBT in NPT-technology Lower E off compared to previous generation Short circuit withstand time 10 µs Designed for: - Motor controls - Inverter - SMPS NPT-Technology offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switching capability G C E PG-TO-263-3-2 Qualified according to JEDEC 1 for target applications Pb-free lead plating; RoHS compliant Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ Type V CE I C E off T j Marking Package SGB02N120 1200V 2A 0.11mJ 150 C GB02N120 PG-TO-263-3-2 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage V CE 1200 V DC collector current T C = 25 C T C = 100 C I C A 6.2 2.8 Pulsed collector current, t p limited by T jmax I Cpuls 9.6 Turn off safe operating area V CE 1200V, T j 150 C - 9.6 Gate-emitter voltage V GE ±20 V Avalanche energy, single pulse E AS 10 mj I C = 2A, V CC = 50V, R GE = 25Ω, start at T j = 25 C Short circuit withstand time 2 t SC 10 µs V GE = 15V, 100V V CC 1200V, T j 150 C Power dissipation P tot 62 W T C = 25 C Operating junction and storage temperature T j, T stg -55...+150 C Soldering temperature (reflow soldering, MSL1) T s 245 1 J-STD-020 and JESD-022 2 Allowed number of short circuits: <1000; time between short circuits: >1s. Power Semiconductors 1 Rev. 2_3 Jan 07
Thermal Resistance Parameter Symbol Conditions Max. Value Unit Characteristic IGBT thermal resistance, junction case Thermal resistance, junction ambient R thjc 2.0 R thja 40 K/W Electrical Characteristic, at T j = 25 C, unless otherwise specified Parameter Symbol Conditions Value min. typ. max. Static Characteristic Collector-emitter breakdown voltage V (BR)CES V GE =0V, I C =100µA 1200 - - Collector-emitter saturation voltage V CE(sat) V GE = 15V, I C =2A T j =25 C T j =150 C 2.5-3.1 3.7 3.6 4.3 Gate-emitter threshold voltage V GE(th) I C =100µA,V CE =V GE 3 4 5 Zero gate voltage collector current I CES V CE =1200V,V GE =0V T j =25 C T j =150 C Gate-emitter leakage current I GES V CE =0V,V GE =20V - - 100 na Transconductance g fs V CE =20V, I C =2A 1.5 - S Dynamic Characteristic Input capacitance C iss V CE =25V, - 205 250 Output capacitance C oss V GE =0V, - 20 25 Reverse transfer capacitance f=1mhz - 12 14 C rss Gate charge Q Gate V CC =960V, I C =2A V GE =15V Internal emitter inductance measured 5mm (0.197 in.) from case Short circuit collector current 2) I C(SC) V GE =15V,t SC 10µs 100V V CC 1200V, T j 150 C - - - - 25 100 Unit V µa pf - 11 - nc L E - 7 - nh - 24 - A 2) Allowed number of short circuits: <1000; time between short circuits: >1s. Power Semiconductors 2 Rev. 2_3 Jan 07
Switching Characteristic, Inductive Load, at T j =25 C Parameter Symbol Conditions Value min. typ. max. IGBT Characteristic Turn-on delay time t d(on) T j =25 C, - 23 30 Rise time t r V CC =800V,I C =2A, - 16 21 Turn-off delay time t d(off) V GE =15V/0V, - 260 340 Fall time t f R G =91Ω, - 61 80 L 1) σ =180nH, Turn-on energy E on - 0.16 0.21 C 1) σ =40pF Turn-off energy E off Energy losses include - 0.06 0.08 Total switching energy E ts tail and diode - 0.22 0.29 reverse recovery. Unit ns mj Switching Characteristic, Inductive Load, at T j =150 C Parameter Symbol Conditions Value min. typ. max. IGBT Characteristic Turn-on delay time t d(on) T j =150 C - 26 31 Rise time t r V CC =800V, - 14 17 Turn-off delay time t d(off) I C =2A, - 290 350 Fall time t f V GE =15V/0V, - 85 102 Turn-on energy E R G =91Ω, on - 0.27 0.33 L 1) σ =180nH, Turn-off energy E off - 0.11 0.15 C 1) σ =40pF Total switching energy E ts Energy losses include - 0.38 0.48 tail and diode reverse recovery. Unit ns mj 1) Leakage inductance L σ and stray capacity C σ due to dynamic test circuit in figure E. Power Semiconductors 3 Rev. 2_3 Jan 07
12A I c 1 t p =10µs 1 8A 6A 4A T C =80 C T C =110 C 1A 0.1A 50µs 150µs 500µs 20ms 2A I c DC 10Hz 100Hz 1kHz 10kHz 100kHz 0.01A 1V 10V 100V 1000V f, SWITCHING FREQUENCY V CE, COLLECTOR-EMITTER VOLTAGE Figure 1. Collector current as a function of switching frequency (T j 150 C, D = 0.5, V CE = 800V, V GE = +15V/0V, R G = 91Ω) Figure 2. Safe operating area (D = 0, T C = 25 C, T j 150 C) 7A 60W 6A Ptot, POWER DISSIPATION 50W 40W 30W 20W 5A 4A 3A 2A 10W 1A 0W 25 C 50 C 75 C 100 C 125 C 25 C 50 C 75 C 100 C 125 C T C, CASE TEMPERATURE Figure 3. Power dissipation as a function of case temperature (T j 150 C) T C, CASE TEMPERATURE Figure 4. Collector current as a function of case temperature (V GE 15V, T j 150 C) Power Semiconductors 4 Rev. 2_3 Jan 07
7A 7A 6A 6A 5A 4A 3A 2A V GE =17V 15V 13V 11V 9V 7V 5A 4A 3A 2A V GE =17V 15V 13V 11V 9V 7V 1A 1A 0V 1V 2V 3V 4V 5V 6V 7V 0V 1V 2V 3V 4V 5V 6V 7V V CE, COLLECTOR-EMITTER VOLTAGE Figure 5. Typical output characteristics (T j = 25 C) V CE, COLLECTOR-EMITTER VOLTAGE Figure 6. Typical output characteristics (T j = 150 C) 7A 6A 5A 4A 3A 2A 1A T j =-40 C T j =+150 C T j =+25 C 3V 5V 7V 9V 11V VCE(sat), COLLECTOR-EMITTER SATURATION VOLTAGE 6V 5V 4V 3V 2V 1V I C =4A I C =2A I C =1A 0V -50 C 0 C 50 C 100 C 150 C V GE, GATE-EMITTER VOLTAGE Figure 7. Typical transfer characteristics (V CE = 20V) T j, JUNCTION TEMPERATURE Figure 8. Typical collector-emitter saturation voltage as a function of junction temperature (V GE = 15V) Power Semiconductors 5 Rev. 2_3 Jan 07
t d(off) t d(off) t, SWITCHING TIMES 100ns t f t d(on) t, SWITCHING TIMES 100ns t f t d(on) t r t r 10ns 2A 4A 6A 8A I C, COLLECTOR CURRENT Figure 9. Typical switching times as a function of collector current (inductive load, T j = 150 C, V CE = 800V, V GE = +15V/0V, R G = 91Ω, dynamic test circuit in Fig.E) 10ns 0Ω 50Ω 100Ω 150Ω R G, GATE RESISTOR Figure 10. Typical switching times as a function of gate resistor (inductive load, T j = 150 C, V CE = 800V, V GE = +15V/0V, I C = 2A, dynamic test circuit in Fig.E) 6V t, SWITCHING TIMES 100ns t f t r t d(off) t d(on) 10ns -50 C 0 C 50 C 100 C 150 C VGE(th), GATE-EMITTER THRESHOLD VOLTAGE 5V 4V 3V 2V 1V max. typ. min. 0V -50 C 0 C 50 C 100 C 150 C T j, JUNCTION TEMPERATURE Figure 11. Typical switching times as a function of junction temperature (inductive load, V CE = 800V, V GE = +15V/0V, I C = 2A, R G = 91Ω, dynamic test circuit in Fig.E) T j, JUNCTION TEMPERATURE Figure 12. Gate-emitter threshold voltage as a function of junction temperature (I C = 0.3mA) Power Semiconductors 6 Rev. 2_3 Jan 07
E, SWITCHING ENERGY LOSSES 2.0mJ 1.5mJ 1.0mJ 0.5mJ ) E on and E ts include losses due to diode recovery. E ts E on E off E, SWITCHING ENERGY LOSSES 0.5mJ 0.4mJ 0.3mJ 0.2mJ 0.1mJ ) E on and E ts include losses due to diode recovery. E ts E on E off 0.0mJ 2A 4A 6A 8A 0.0mJ 0Ω 50Ω 100Ω 150Ω I C, COLLECTOR CURRENT Figure 13. Typical switching energy losses as a function of collector current (inductive load, T j = 150 C, V CE = 800V, V GE = +15V/0V, R G = 91Ω, dynamic test circuit in Fig.E ) R G, GATE RESISTOR Figure 14. Typical switching energy losses as a function of gate resistor (inductive load, T j = 150 C, V CE = 800V, V GE = +15V/0V, I C = 2A, dynamic test circuit in Fig.E ) 0.4mJ E, SWITCHING ENERGY LOSSES 0.3mJ 0.2mJ 0.1mJ ) E on and E ts include losses due to diode recovery. E ts E on E off 0.0mJ -50 C 0 C 50 C 100 C 150 C ZthJC, TRANSIENT THERMAL IMPEDANCE 10 0 K/W 10-1 K/W 10-2 K/W D=0.5 0.2 0.1 0.05 0.02 0.01 single pulse R,(K/W) τ, (s) 0.66735 0.04691 0.70472 0.00388 0.62778 0.00041 R 1 R 2 C 1=τ 1/R 1 C 2=τ 2/R 2 1µs 10µs 100µs 1ms 10ms 100ms 1s T j, JUNCTION TEMPERATURE Figure 15. Typical switching energy losses as a function of junction temperature (inductive load, V CE = 800V, V GE = +15V/0V, I C = 2A, R G = 91Ω, dynamic test circuit in Fig.E ) t p, PULSE WIDTH Figure 16. IGBT transient thermal impedance as a function of pulse width (D = t p / T) Power Semiconductors 7 Rev. 2_3 Jan 07
20V VGE, GATE-EMITTER VOLTAGE 15V 10V 5V U CE =960V C, CAPACITANCE 100pF C iss C oss 0V 0nC 5nC 10nC 15n Q GE, GATE CHARGE Figure 17. Typical gate charge (I C = 2A) 10pF 0V 10V 20V 30V V CE, COLLECTOR-EMITTER VOLTAGE Figure 18. Typical capacitance as a function of collector-emitter voltage (V GE = 0V, f = 1MHz) C rss 30µs 4 tsc, SHORT CIRCUIT WITHSTAND TIME 25µs 20µs 15µs 10µs 5µs IC(sc), SHORT CIRCUIT COLLECTOR CURRENT 3 2 1 0µs 10V 11V 12V 13V 14V 15V V GE, GATE-EMITTER VOLTAGE Figure 19. Short circuit withstand time as a function of gate-emitter voltage (V CE = 1200V, start at T j = 25 C) 10V 12V 14V 16V 18V 20V V GE, GATE-EMITTER VOLTAGE Figure 20. Typical short circuit collector current as a function of gate-emitter voltage (100V V CE 1200V, T C = 25 C, T j 150 C) Power Semiconductors 8 Rev. 2_3 Jan 07
PG-TO263-3-2 Power Semiconductors 9 Rev. 2_3 Jan 07
i,v di F /dt t =t + t rr S F Q =Q + Q rr S F t rr I F t S t F Q S Q F 10% I rrm t I rrm di 90% I rrm rr /dt V R Figure C. Definition of diodes switching characteristics T(t) j τ 1 r1 τ 2 r2 τ r n n p(t) r r 1 2 n r Figure A. Definition of switching times T C Figure D. Thermal equivalent circuit Figure B. Definition of switching losses Figure E. Dynamic test circuit Leakage inductance L σ =180nH, and stray capacity C σ =40pF. Power Semiconductors 10 Rev. 2_3 Jan 07
Edition 2006-01 Published by Infineon Technologies AG 81726 München, Germany Infineon Technologies AG 1/22/07. All Rights Reserved. Attention please! The information given in this data sheet shall in no event be regarded as a guarantee of conditions or characteristics ( Beschaffenheitsgarantie ). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Power Semiconductors 11 Rev. 2_3 Jan 07