SPPN6C3, SPBN6C3 SPIN6C3, SPAN6C3 Cool MOS Power Transistor Feature New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated Extreme dv/dt rated High peak current capability Improved transconductance 5 C operating temperature P-TO-3-3 3 P-TO-3-3 P-TO6-3- Product Summary V DS @ T jmax 65 V R DS(on).38 Ω I D A P-TO63-3- P-TO-3- Type Package Ordering Code SPPN6C3 P-TO-3- Q674-S4395 SPBN6C3 P-TO63-3- Q674-S4396 SPIN6C3 P-TO6-3- Q674-S443 SPAN6C3 P-TO-3-3 Q674-S448 Marking N6C3 N6C3 N6C3 N6C3 Maximum Ratings Parameter Symbol Value Unit Continuous drain current T C = 5 C T C = C I D SPP_B_I SPA A 7 ) 7 ) Pulsed drain current, t p limited by T jmax I D puls 33 33 A Avalanche energy, single pulse E AS 34 34 mj I D =5.5A, V DD =5V Avalanche energy, repetitive t AR limited by T jmax ) E AR.6.6 I D =A, V DD =5V Avalanche current, repetitive t AR limited by T jmax I AR A Reverse diode dv/dt dv/dt 6 6 V/ns I S = A, V DS < V DD, di/dt=a/µs, T jmax =5 C Gate source voltage static V GS ± ± V Gate source voltage AC (f >Hz) V GS ±3 ±3 Power dissipation, T C = 5 C P tot 5 33 W Operating and storage temperature T j, T stg -55...+5 C Page -6-4
Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Characteristics Thermal resistance, junction - case R thjc - - K/W Thremal resistance, junction - case, FullPAK R thjc_fp - - 3.8 Thermal resistance, junction - ambient, leaded R thja - - 6 Thermal resistance, junction - ambient, FullPAK R thja_fp - - 8 SMD version, device on PCB: @ min. footprint @ 6 cm cooling area 3) R thja - - 6-35 - Linear derating factor - - W/K Linear derating factor, FullPAK - -.6 Soldering temperature,.6 mm (.63 in.) from case for s T sold - - 6 C Electrical Characteristics, at T j = 5 C, unless otherwise specified Static Characteristics Drain-source breakdown voltage V (BR)DSS 6 - - V V GS =V, I D =.5mA Drain-source avalanche breakdown voltage V (BR)DS - 7 - V GS =V, I D =A Gate threshold voltage, V GS = V DS V GS(th). 3 3.9 I D =.5 ma Zero gate voltage drain current V DS = 6 V, V GS = V, T j = 5 C V DS = 6 V, V GS = V, T j = 5 C I DSS µa - -. - Gate-source leakage current I GSS - - na V GS =3V, V DS =V Drain-source on-state resistance V GS =V, I D =7A, T j =5 C V GS =V, I D =7A, T j =5 C R DS(on) Ω - -.34..38. Gate input resistance R G -.86 - f = MHz, open drain Page -6-4
Electrical Characteristics Parameter Symbol Conditions Values Unit min. typ. max. Characteristics Transconductance g fs V DS *I D *R DS(on)max, - 8.3 - S I D =7A Input capacitance C iss V GS =V, V DS =5V, - - pf Output capacitance C oss f=mhz - 39 - Reverse transfer capacitance C rss - 3 - Effective output capacitance, 4) energy related Effective output capacitance, 5) time related C o(er) V GS =V, V DS =V to 48V - 45 - C o(tr) - 85 - Turn-on delay time t d(on) V DD =38V, V GS =/V, - - ns Rise time t r I D =A, - 5 - Turn-off delay time t d(off) R G =6.8Ω - 44 7 Fall time t f - 5 9 Gate Charge Characteristics Gate to source charge Q gs V DD =48V, I D =A - 5.5 - nc Gate to drain charge Q gd - - Gate charge total Q g V DD =48V, I D =A, - 45 6 V GS = to V Gate plateau voltage V (plateau) V DD =48V, I D =A - 5.5 - V Limited only by maximum temperature Repetitve avalanche causes additional power losses that can be calculated as PAV =E AR *f. 3 Device on 4mm*4mm*.5mm epoxy PCB FR4 with 6cm² (one layer, 7 µm thick) copper area for drain connection. PCB is vertical without blown air. 4 Co(er) is a fixed capacitance that gives the same stored energy as C oss while V DS is rising from to 8% V DSS. 5 Co(tr) is a fixed capacitance that gives the same charging time as C oss while V DS is rising from to 8% V DSS. Page 3-6-4
Electrical Characteristics Parameter Symbol Conditions Values Unit min. typ. max. Characteristics Inverse diode continuous I S T C =5 C - - A forward current Inverse diode direct current, I SM - - 33 pulsed Inverse diode forward voltage V SD V GS =V, I F =I S -. V Reverse recovery time t rr V R =48V, I F =I S, - 4 6 ns Reverse recovery charge Q rr di F /dt=a/µs - 6 - µc Peak reverse recovery current I rrm - 4 - A Peak rate of fall of reverse di rr /dt T j =5 C - - A/µs recovery current Typical Transient Thermal Characteristics Symbol Value Unit Symbol Value Unit SPP_B_I SPA SPP_B_I SPA R th.5.5 K/W C th..88 Ws/K R th.34.3 C th.79.78 R th3.56.43 C th3.84.98 R th4.4.9 C th4.54.73 R th5.43.35 C th5.. R th6.57.499 C th6.9.4 P tot (t) T j R th R th,n T case External Heatsink C th C th C th,n T amb Page 4-6-4
Power dissipation P tot = f (T C ) Power dissiaption FullPAK P tot = f (T C ) 4 SPPN6C3 W W 35 5 Ptot 9 8 Ptot 7 6 5 5 4 3 5 4 6 8 C 6 T C 4 6 8 C 6 T C 3 Safe operating area FullPAK I D = f (V DS ) parameter: D =, T C = 5 C A 4 Transient thermal impedance FullPAK Z thjc = f (t p ) parameter: D = t p /t K/W ID ZthJC - - tp =. ms tp =. ms tp =. ms tp = ms tp = ms DC - -3 D =.5 D =. D =. D =.5 D =. D =. single pulse - V 3 V DS Page 5-4 -7-6 -5-4 -3 - - s t p -6-4
5 Typ. output characteristic I D = f (V DS ); T j =5 C parameter: t p = µs, V GS 6 Typ. output characteristic I D = f (V DS ); T j =5 C parameter: t p = µs, V GS 4 A 3 8 V V 8V 7V A 8 6 V 8V 7V 7.5V 6V ID 4 6 6,5V 6V ID 4 8 5.5V 5V 8 4 5,5V 5V 4,5V 6 4 4.5V 4V 3 6 9 5 8 V 7 V DS 7 Typ. drain-source on resistance R DS(on) =f(i D ) parameter: T j =5 C, V GS R DS(on) Ω.6.4. 4V 4.5V 5V 5.5V 6V 5 5 V 5 V DS 8 Drain-source on-state resistance R DS(on) = f (T j ) parameter : I D = 7 A, V GS = V RDS(on) SPPN6C3. Ω.8.6.4..8.8.6 6.5V 8V V.6.4. 98% typ.4 4 6 8 4 6 A I D Page 6-6 - 6 C 8 T j -6-4
9 Typ. transfer characteristics I D = f ( V GS ); V DS x I D x R DS(on)max parameter: t p = µs 4 A 5 C Typ. gate charge V GS = f (Q Gate ) parameter: I D = A pulsed 6 SPPN6C3 V 3 ID 8 4 5 C VGS, V DS max,8 V DS max 8 6 6 8 4 4 4 6 8 V 5 V GS Forward characteristics of body diode I F = f (V SD ) parameter: T j, tp = µs A SPPN6C3 3 4 5 nc 7 Q Gate Typ. switching time t = f (I D ), inductive load, T j =5 C par.: V DS =38V, V GS =/+3V, R G =6.8Ω ns 7 6 55 td(off) IF 5 45 4 35 3 T j = 5 C typ T j = 5 C typ T j = 5 C (98%) T j = 5 C (98%) 5 5 5 -.4.8..6.4 V 3 V SD 4 6 8 A I D Page 7 t tr tf td(on) -6-4
3 Typ. switching time t = f (R G ), inductive load, T j =5 C par.: V DS =38V, V GS =/+3V, I D = A 35 4 Typ. drain current slope di/dt = f(r G ), inductive load, T j = 5 C par.: V DS =38V, V GS =/+3V, I D =A 3 ns A/µs t 5 di/dt 5 td(off) td(on) tr tf 5 di/dt(off) 5 5 di/dt(on) 3 4 5 Ω 7 R G 5 Typ. drain source voltage slope dv/dt = f(r G ), inductive load, T j = 5 C par.: V DS =38V, V GS =/+3V, I D =A 4 6 8 Ω R G 6 Typ. switching losses E = f (I D ), inductive load, T j =5 C par.: V DS =38V, V GS =/+3V, R G =6.8Ω 4 V/ns dv/dt(off).4 mws *) Eon includes SPD6S6 diode commutation losses dv/dt 9 8 7 E.3.5. 6.5 5 4 dv/dt(on). Eon* 3.5 Eoff 3 4 5 Ω 7 R G Page 8 4 6 8 A I D -6-4
7 Typ. switching losses E = f(r G ), inductive load, T j =5 C par.: V DS =38V, V GS =/+3V, I D =A 8 Avalanche SOA I AR = f (t AR ) par.: T j 5 C.4 mws *) Eon includes SPD6S6 diode commutation losses A 9 8 E.6 Eoff IAR 7. 6 5 Tj(START)=5 C.8 4 Eon* 3 T j (START)=5 C.4 3 4 5 Ω 7 R G 9 Avalanche energy E AS = f (T j ) par.: I D = 5.5 A, V DD = 5 V 35 mj -3 - - µs 4 t AR Drain-source breakdown voltage V (BR)DSS = f (T j ) 7 SPPN6C3 V EAS 5 V(BR)DSS 68 66 64 5 6 6 58 5 56 4 6 8 C 6 T j 54-6 - 6 C 8 T j Page 9-6-4
Avalanche power losses P AR = f (f ) parameter: E AR =.6mJ 3 W Typ. capacitances C = f (V DS ) parameter: V GS =V, f= MHz 4 pf C iss 3 PAR C 5 C oss C rss 5 4 5 Hz 6 f 3 4 V 6 V DS 3 Typ. C oss stored energy E oss =f(v DS ) µj 7.5 6 5.5 Eoss 5 4.5 4 3.5 3.5.5.5 3 4 V 6 V DS Page -6-4
Definition of diodes switching characteristics Page -6-4
P-TO-3- P-TO-3- dimensions symbol [mm] [inch] min max min max A 9.7.3.389.455 B 4.88 5.95.5858.68 C.65.86.56.339 D 3.55 3.89.398.53 E.6 3..4.8 F 6. 6.8.36.677 G 3. 4..58.55 H 4.35 4.75.73.87 K.38.65.5.56 L.95.3.374.5 M.54 typ.. typ. N 4.3 4.5.693.77 P.7.4.46.55 T.3.7.96.7 TO-63 (D²Pak/P-TOSMD) dimensions symbol [mm] [inch] min max min max A 9.8..3858.46 B.7.3.76.5 C..6.394.63 D.3.7.46.4 E.54 typ.. typ. F.65.85.56.335 G 5.8 typ.. typ. H 4.3 4.5.693.77 K.7.37.46.539 L 9.5 9.45.3563.37 M.3.5.96.984 N 5 typ..596 typ. P....79 Q 4. 5..654.47 R 8 max 8 max S.4 3..945.8 T.4.6.57.36 U V W X Y Z.8.5 6.3 4.6 9.4 6.5.45.453.453.8.37.6358 Page -6-4
.5 ±.5.5 ±. 6.±..7 ±.5 4.7 ±.5 3.6 ±.5 5.99 ±.5 4.±.5.79 ±.5 9.68 ±.5 3.3 ±.5 7 3 +.3.8 -. +.5.5 -. +.3.7 -..57 ±..54 GPT93 Please refer to mounting instructions (application note AN-TO-3-3-) Page 3-6-4
P-TO6-3- Page 4-6-4
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