KHB9D5N20P1/F1/F2 N CHANNEL MOS FIELD EFFECT TRANSISTOR SEMICONDUCTOR TECHNICAL DATA. General Description

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SIUTR TI T 952P1/1/2 S I T TRSISTR eneral escription 952P1 This planar stripe ST has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switch mode power supplies. TURS V SS =2V, I =9.5 rain-source Resistance : R S() =4m @V S = 1V g(typ.)=18.5n I 1 2 3 P 1. T 2. RI 3. SUR I I P IITRS 9.9 +_.2 15.95 X 1.3+.1/-.5.8 +_.1 3.6 +_.2 2.8 +_.1 3.7.5+.1/-.5 1.5 13.8 +_.3 1.46 1.4 +_.1 1.27 +_.1 2.54 +_.2 4.5 +_.2 2.4 +_.2 9.2 +_.2 XIU RTI (Tc=25 ) RTRISTI SY RTI 952P1 9521 9522 rain-source Voltage V SS 2 V ate-source Voltage V SS 3 V rain urrent Single Pulsed valanche nergy (ote 2) Repetitive valanche nergy (ote 1) Peak iode Recovery dv/dt (ote 3) rain Power issipation @T =25 I 9.5 9.5* Pulsed (ote1) I P 38 38* UIT S 18 m R 8.7 m dv/dt 5.5 V/ns Tc=25 P 87 4 W erate above25.7.32 W/ aximum unction Temperature T j 15 Storage Temperature Range T stg -55 15 Thermal haracteristics Thermal Resistance, unction-to-ase R th 1.44 3.13 /W Thermal Resistance, unction-to- mbient PI TI R th 62.5 62.5 /W S 1 2 3 1 2 3 T-22 R 1. T 2. RI 3. SUR T-22IS (1) 9521 9522 P R 1. T 2. RI 3. SUR I R IITRS 1.16 +_.2 15.87 +_.2 2.54 +_.2.8 +_.1 3.18 +_.1 3.3 +_.1 12.57 +_.2.5 +_.1 13. X 3.23 +_.1 1.47 X 1.47 X 2.54 +_.2 6.68 +_.2 4.7 +_.2 2.76 +_.2 I IITRS 1. +_.3 15. +_.3 2.7 +_.3.76+.9/-.5 Φ3.2 +_.2 3. +_.3 12. +_.3.5+.1/-.5 13.6 +_.5 3.7 +_.2 1.2+.25/-.1 1.5+.25/-.1 2.54 +_.1 P 6.8 +_.1 4.5 +_.2 R 2.6 +_.2 S.5 Typ S T-22IS 1/7

952P1/1/2 TRI RTRISTIS (Tc=25 ) RTRISTI SY TST ITI I. TYP. X. UIT Static rain-source reakdown Voltage V SS I =25, V S =V 2 - - V reakdown Voltage Temperature oefficient V SS / T j I =25, Referenced to 25 -.19 - V/ ate Threshold Voltage V th V S =V S, I =25 2. - 4. V rain ut-off urrent I SS V S =2V, V S =V, - - 1 ate eakage urrent I SS V S = 3V, V S =V - - 1 n rain-source Resistance R S() V S =1V, I =4.75-345 4 m orward Transconductance g S V S =4V, I =4.75 (ote4) - 6.7 - S ynamic Total ate harge g - 18.5 23 V S =16V, I =9.5 ate-source harge gs V S =1V (ote4, 5) - 2.7 - n ate-rain harge gd - 9 - Turn-on elay time t d(on) - 11 32 Turn-on Rise time t r V =1V, R =25-62 135 Turn-off elay time t d(off) I =9.5 (ote4, 5) - 46 12 ns Turn-off all time t f - 8 17 Input apacitance iss - 387 53 utput apacitance oss VS=25V, VS=V, f=1.z - 96 125 p Reverse Transfer apacitance rss - 34 45 Source-rain iode Ratings ontinuous Source urrent I S - - 9.5 V S <V th Pulsed Source urrent I SP - - 38 iode orward Voltage V S I S =9.5, V S =V - - 1.5 V Reverse Recovery Time t rr IS =9.5, V S =V, - 13 - ns Reverse Recovery harge rr dis/dt=1/ s (ote 4) -.6 - ote 1) Repetivity rating : Pulse width limited by junction temperature. ote 2) =3m, I S =9.5, V =5V, R =25, Starting T j =25. ote 3) I S 9.5, di/dt 3/, V V SS, Starting T j =25. ote 4) Pulse Test : Pulse width 3, uty ycle 2%. ote 5) ssentially independent of operating temperature. 2/7

952P1/1/2 ig1. I - V S ig2. I - V S rain urrent I () V S TP : 15. V 1. V 8. V 7. V 6.5 V 6. V 5.5 V ottom : 5. V rain urrent I () V S = 4V 25µs Pulse Test 15 25-55 2 4 6 8 1 rain - Source Voltage V S (V) ate - Source Voltage V S (V) ig4. V SS - T j ig5. R S() - I ormalized reakdown Voltage V SS 1.2 1.1 1..9 V S = V I S = 25µ.8-1 -5 5 1 15 n - Resistance R S() (Ω) 2. 1.5 1. V S = 1V.5 V S = 2V 5 5 2 25 3 unction Temperature T j ( ) rain urrent I () ig6. I S - V S ig6. R S() - T j Reverse rain urrent I S () 15 25 ormalized n Resistance 3. 2.5 2. 1.5 1..5 V S = 1V I S = 5.2.4.6.8 1. 1.2 1.4 1.6 1.8 Source - rain Voltage V S (V). -1-5 5 1 15 unction Temperature T j ( ) 3/7

952P1/1/2 ig7. - V S ig8. g - V S 25 requency =1z 12 I = 9.5 apacitance (p) 2 iss 15 1 oss rss 5 ate - Source Voltage V S (V) 1 8 6 4 2 V S = 5V V S = 125V V S = 2V 5 5 2 rain - Source Voltage V S (V) ate - harge g (n) ig9. Safe peration rea ig1. Safe peration rea (952P1) (9521, 9522) 1 2 peration in this area is limited by R S() 1 2 peration in this area is limited by R S() rain urrent I () T = 25 T j = 15 Single nonrepetitive pulse 1 2 1µs 1ms 1ms 1ms rain urrent I () T = 25 T j = 15 Single nonrepetitive pulse 1 2 1 µs 1 ms 1 ms 1 ms rain - Source Voltage V S (V) rain - Source Voltage V S (V) ig11. I - T j 12 1 rain urrent I () 8 6 4 2 25 5 75 1 125 15 unction Temperature Tj ( ) 4/7

952P1/1/2 ig12. Transient Thermal Response urve ormalized Transient Thermal Resistance uty=.5.2.1.5.2.1 Single Pulse - uty actor, = t 1 /t 2 1-2 1-5 1-4 1-3 1-2 P t 1 t 2 TI (sec) ig13. Transient Thermal Response urve ormalized Transient Thermal Resistance 1-2 uty=.5.2.1.5.2.1 Single Pulse P 1-5 1-4 1-3 1-2 t 1 t 2 - uty actor, = t 1 /t 2 TI (sec) 5/7

952P1/1/2 ig14. ate harge VS I ast Recovery iode 1 V.8 V SS 1. m I VS V S gs gd g ig15. Single Pulsed valanche nergy 1 S = I 2 2 S V SS V SS - V V SS I S.5 V SS 25Ω I (t) V S 1 V VS V V S (t) t p Time 6/7

952P1/1/2 ig16. Resistive oad Switching R V S 9%.5 V SS 25 Ω V S V 1% S t f 1V VS t d(on) t r t d(off) t on t off ig17. Source - rain iode Reverse Recovery and dv /dt ody iode orword urrent UT VS I S (UT) di/dt I IR.8 x V SS IS ody iode Reverse urrent driver VS (UT) ody iode Recovery dv/dt V S 1V VS V ody iode orword Voltage drop 7/7