High Voltage XPT TM IGBT w/ Diode Advance Technical Information IXYHN7CV V CES = 7V = A V CE(sat).V = 7ns t fi(typ) Symbol Test Conditions Maximum Ratings V CES = C to 7 C 7 V V CGR = C to 7 C, R GE = M 7 V V GES Continuous ± V V GEM Transient ± V = C A = C A I F = C A M = C, ms A SSOA V GE = V, T VJ = C, R G = M = A (RBSOA) Clamped Inductive Load V P C = C W -... +7 C M 7 C T stg -... +7 C T L Maximum Lead Temperature for Soldering C T SOLD. mm (.in.) from Case for s C M d Mounting Torque./ Nm/lb.in. Weight g TO-7 AD G C E Tab G = Gate C = Collector E = Emitter Tab = Collector Features High Voltage Package High Blocking Voltage Low Saturation Voltage Advantages Low Gate Drive Requirement High Power Density Symbol Test Conditions Characteristic Values ( = C, Unless Otherwise Specified) Min. Typ. Max. BV CES = A, V GE = V 7 V V GE(th) = A, V CE = V GE.. V ES V CE = V CES, V = V A GE = C ma I GES V CE = V, V GE = V na V CE(sat) = A, V GE = V, Note.. V = C. V Applications Switch-Mode and Resonant-Mode Power Supplies Uninterruptible Power Supplies (UPS) Laser Generators Capacitor Discharge Circuits AC Switches 7 IXYS CORPORATION, All Rights Reserved. DS7(/7)
Symbol Test Conditions Characteristic Values ( = C Unless Otherwise Specified) Min. Typ. Max. g fs = A, V CE = V, Note. 9. S R Gi Gate Input Resistance C ies 9 pf C oes V CE = V, V GE = V, f = MHz 7 pf C res pf Q g(on) nc Q ge = A, V GE = V, V CE =. V CES nc Q gc nc t d(on) ns t Inductive load, = C ri 7 ns E = A, V GE = V on. mj t V CE =. V CES, R G = d(off) ns t fi Note 7 ns.7 mj t d(on) ns t Inductive load, = C ri ns E = A, V GE = V on. mj t V CE =. V CES, R G = d(off) ns t fi Note 9 ns.9 mj R thjc. C/W R thcs. C/W D A A A c IXYHN7CV TO-7 (IXYH) Outline D L R L E R b b b e J M C A M B Q S D C P IXYS OPTION A P K M D B M E - Gate, - Collector - Emitter D Reverse Diode (FRED) ( = C, Unless Otherwise Specified) Characteristic Value Symbol Test Conditions Min. Typ. Max. V F I. V F = A,V GE = V, Note = C. V I RM I A F = A,V GE = V, -di F /dt = A/μs, t V rr R = V, = C ns R thjc.7 C/W Notes:. Pulse test, t μs, duty cycle, d %.. Switching times & energy losses may increase for higher V CE (clamp), or R G. ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered,,9,9,,9,9,7,,,,, B,,,77, 7,,7 B 7,7,B by one or more of the following U.S. patents:,,7,7,,,7,,,9, B,,,7, B,79,9 7,,97 B,,,,79,7,7,,7,,7 B,,,7,,77,7 B 7,7,7
IXYHN7CV Fig.. Output Characteristics @ = ºC...... V GE = V V V 9V V 7V V 9 7 Fig.. Extended Output Characteristics @ = ºC V GE = V V V V V V 9V V 7V V Fig.. Output Characteristics @ = ºC V GE = V V V 9V 7 V 7V V V VCE(sat) - Normalized........ V GE = V Fig.. Dependence of V CE(sat) on = A = A. - - 7 7 - Degrees Centigrade = A Fig.. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage Fig.. Input Admittance = ºC 7 7 VCE - Volts = A A 9 = ºC ºC - ºC A 7 9 V GE - Volts...... 7. 7... 9. 9. V GE - Volts 7 IXYS CORPORATION, All Rights Reserved.
IXYHN7CV Fig. 7. Transconductance Fig.. Gate Charge = - ºC V CE = V = A I G = ma ºC g f s - Siemens ºC VGE - Volts - Amperes Q G - NanoCoulombs Fig. 9. Capacitance Fig.. Reverse-Bias Safe Operating Area, f = MHz Capacitance - PicoFarads, C ies Coes = ºC C res R G = Ω dv / dt < V / ns Fig.. Maximum Transient Thermal Impedance (IGBT) Z(th)JC - K / W........ Pulse Width - Second IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYHN7CV. Fig.. Inductive Switching Energy Loss vs. Gate Resistance. Fig.. Inductive Switching Energy Loss vs. Collector Current. 7. 7 = ºC, V GE = V R G = Ω V GE = V. V CE = V. V CE = V Eoff - MilliJoules... = A - MilliJoules Eoff - MilliJoules... = ºC - MilliJoules.. = ºC. = A.. 7 R G - Ohms. - Amperes. Fig.. Inductive Switching Energy Loss vs. Fig.. Inductive Turn-off Switching Times vs. Gate Resistance. R G = Ω V GE = V t f i t d(off) = ºC, V GE = V V CE = V V CE = V Eoff - MilliJoules... = A - MilliJoules t f i - Nanoseconds 9 = A = A t d(off) - Nanoseconds. = A. 7 - Degrees Centigrade 7 7 R G - Ohms Fig.. Inductive Turn-off Switching Times vs. Collector Current Fig. 7. Inductive Turn-off Switching Times vs. t f i - Nanoseconds = ºC = ºC t f i t d(off) R G = Ω, V GE = V V CE = V t d(off) - Nanoseconds t f i - Nanoseconds t f i t d(off) R G = Ω, V GE = V V CE = V = A = A t d(off) - Nanoseconds - Amperes 7 - Degrees Centigrade 7 IXYS CORPORATION, All Rights Reserved.
IXYHN7CV Fig.. Inductive Turn-on Switching Times vs. Gate Resistance Fig. 9. Inductive Turn-on Switching Times vs. Collector Current 7 t r i - Nanoseconds t r i t d(on) = ºC, V GE = V V CE = V = A = A t d(on) - Nanoseconds t r i - Nanoseconds t r i t d(on) R G = Ω, V GE = V V CE = V = ºC = ºC t d(on) - Nanoseconds 7 R G - Ohms - Amperes Fig.. Inductive Turn-on Switching Times vs. t r i t d(on) R G = Ω, V GE = V 7 t r i - Nanoseconds V CE = V = A = A t d(on) - Nanoseconds 7 - Degrees Centigrade IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: IXY_N7C(T-AT) --7
IXYHN7CV Fig.. Diode Forward Characteristics Fig.. Reverse Recovery Charge vs. -di F /dt. = ºC. V R = V = ºC I F = A IF (A) = ºC QRR (µc).. A A. V F (V). -di F / dt (A/µs) Fig.. Reverse Recovery Current vs. -di F /dt Fig.. Reverse Recovery Time vs. -di F /dt = ºC = ºC V R = V I F = A V R = V A IRR (A) A trr (ns) I F = A A A di F /dt (A/µs) -di F /dt (A/µs). Fig.. Dynamic Parameters Q RR, I RR vs. Fig.. Maximum Transient Thermal Impedance (Diode) V R = V. I F = A -dif/dt = A/µs KF.9. K F Q RR Z(th)JC - K / W.7 K F I RR. (ºC)..... Pulse Width - Second 7 IXYS CORPORATION, All Rights Reserved.