3B: Review. Nina Hong. U Penn, February J.A. Woollam Co., Inc. 1

Similar documents
2A: Absorbing Materials Pt-by-Pt and GenOsc

Session 3B Using the Gen-Osc Layer to Fit Data

2. Transparent Films. Neha Singh October 2010

Ellipsometry Tutorial

Spectroscopic Ellipsometry Analysis of Opaque Gold Film for Epner Technology

Measurement of Optical Constants (n,k) using MProbe

VASE. J.A. Woollam Co., Inc. Ellipsometry Solutions

Near-Infrared to Vacuum Ultraviolet (VUV) Dielectric Properties of LaAlO 3

Spectroscopic Ellipsometry (SE) in Photovoltaic Applications

CVD-3 LFSIN SiN x Process

CVD-3 MFSIN-HU-2 SiN x Mixed Frequency Process

CVD-3 SIO-HU SiO 2 Process

NON-DESTRUCTIVE EVALUATION IN MANUFACTURING USING SPECTROSCOPIC. John A. Woollam and Paul G. Snyder

CVD-3 MFSIN-HU-1 SiN x Mixed Frequency Process

OPTICAL ANALYSIS OF ZnO THIN FILMS USING SPECTROSCOPIC ELLIPSOMETRY AND REFLECTOMETRY.

THIN-FILM MEASUREMENT

DUV ( nm ) Characterization of Materials: A new instrument, the Purged UV Spectroscopic Ellipsometer,

1.1 FEATURES OF SPECTROSCOPIC ELLIPSOMETRY

Discover the Difference

Urbach tail extension of Tauc-Lorentz model dielectric function

Summary of presentation

Refractive index profiling of CeO2 thin films using reverse engineering methods

Supporting information for: Semitransparent Polymer-Based Solar Cells with. Aluminum-Doped Zinc Oxide Electrodes

Supplementary Figure 1

Ellipsometric spectroscopy studies of compaction and decompaction of Si-SiO 2 systems

Thin film interference in ultra-thin layers: color coatings, tunable absorbers, and thermal emitters

Ellipsometry measures variations of the polarization state of light reflected from a

Spectroscopic ellipsometry on thin titanium oxide layers grown on titanium by plasma oxidation

Spectroscopic Ellipsometry and Cryogenic Capability

Optical characterization of highly inhomogeneous thin films

Superconductivity Induced Transparency

OPTICAL Optical properties of multilayer systems by computer modeling

Optical Spectroscopies of Thin Films and Interfaces. Dietrich R. T. Zahn Institut für Physik, Technische Universität Chemnitz, Germany

Supplementary Figure 1 Comparison between normalized and unnormalized reflectivity of

Supporting Information. The Potential of Multi-Junction Perovskite Solar Cells

Linköping University Post Print. Optical properties and switching of a Rose Bengal derivative: A spectroscopic ellipsometry study

Introduction to Spectroscopic Ellipsometry

Infrared Optical Material - CaF 2

Characterization of organic low-dielectric-constant materials using optical spectroscopy

PMARIZED LI6HT FUNDAMENTALS AND APPLICATIONS EBWABD COLLETT. Measurement Concepts, Inc. Colts Neck, New Jersey

On the nucleation of Pt & Pd during atomic layer deposition & temperature programmed desorption for thin film analysis

Structure-Thermal Property Correlation of Aligned Silicon. Dioxide Nanorod Arrays

SUPPLEMENTARY MATERIALS FOR PHONON TRANSMISSION COEFFICIENTS AT SOLID INTERFACES

Resonator Fabrication for Cavity Enhanced, Tunable Si/Ge Quantum Cascade Detectors

Analysis of optical spectra by computer simulation - from basics to batch mode

Supporting Information

Laser Optics-II. ME 677: Laser Material Processing Instructor: Ramesh Singh 1

Supplementary Figure 1 In-situ and ex-situ XRD. a) Schematic of the synchrotron

Chapter 6. Fiber Optic Thermometer. Ho Suk Ryou

Supplementary Figures

Determination of Optical Constants of Polystyrene Films from IR Reflection-Absorption Spectra

Review of Optical Properties of Materials

MS482 Materials Characterization ( 재료분석 ) Lecture Note 4: XRF

Supporting Information

Application of imaging ellipsometry: graphene - pinpointing and ellipsometric characterization ULRICH WURSTBAUER CHRISTIAN RÖLING PETER H.

The Optical Constants of Highly Absorbing Films Using the Spectral Reflectance Measured By Double Beam Spectrophotometer

Optical properties of bulk and thin-film SrTiO 3 on Si and Pt

Charge Extraction. Lecture 9 10/06/2011 MIT Fundamentals of Photovoltaics 2.626/2.627 Fall 2011 Prof. Tonio Buonassisi

SUPPLEMENTARY INFORMATION

CORRELATION BETWEEN HOT PLATE EMISSIVITY AND WAFER TEMPERATURE AT LOW TEMPERATURES

Fresnel Equations cont.

Electronic supplementary information

In-situ Monitoring of Thin-Film Formation Processes by Spectroscopic Ellipsometry

The Anisotropic Dielectric Function for Copper Phthalocyanine Thin Films

Wide angle beam spectroscopic ellipsometer develepement and application for the investigation of solar cell technology ZnO layers

Nanoscale IR spectroscopy of organic contaminants

Infrared to vacuum-ultraviolet ellipsometry and optical Hall-effect study of free-charge carrier parameters in Mg-doped InN

The optical constants of highly absorbing films using the spectral reflectance measured by double beam spectrophotometer

Polarized Light. Second Edition, Revised and Expanded. Dennis Goldstein Air Force Research Laboratory Eglin Air Force Base, Florida, U.S.A.

Optical constants of Cu, Ag, and Au revisited

AP 5301/8301 Instrumental Methods of Analysis and Laboratory

Solar Cell Materials and Device Characterization

IR SPECTROSCOPY FOR BONDING SURFACE CONTAMINATION CHARACTERIZATION

Elastic Constants and Microstructure of Amorphous SiO 2 Thin Films Studied by Brillouin Oscillations

Real-time and in-line Optical monitoring of Functional Nano-Layer Deposition on Flexible Polymeric Substrates

Slow Light in Crystals

Plasma Enhanced Chemical Vapor Deposition (PECVD) of Silicon Dioxide (SiO2) Using Oxford Instruments System 100 PECVD

Molecular orientation in small-molecule organic light-emitting diodes

OPTICAL SURFACE PROPERTIES OF POLYIMIDES CROSS-LINKED THIN FILM

Electrical Characterisation of TCO thin films (method of four coefficients).

Jaroslav Hamrle. October 21, 2014

Lecture 20 Optical Characterization 2

Supplementary Information for Negative refraction in semiconductor metamaterials

ELLIPSOMETRIC ARRANGEMENT FOR THIN FILMS CONTROL

Propagation losses in optical fibers

In-situ Multilayer Film Growth Characterization by Brewster Angle Reflectance Differential Spectroscopy

Organic solar cells with inverted layer sequence incorporating optical spacers - simulation and experiment.

Electrodynamics of Annealed and Unannealed La 0.67 Sr 0.33 MnO 3 Thin Films. Daniel R. Branagan Honors Thesis

MS482 Materials Characterization ( 재료분석 ) Lecture Note 12: Summary. Byungha Shin Dept. of MSE, KAIST

Lecture 4. Conductance sensors. ChemFET. Electrochemical Impedance Spectroscopy. py Practical consideration for electrochemical biosensors.

Laser Basics. What happens when light (or photon) interact with a matter? Assume photon energy is compatible with energy transition levels.

Optical Properties of Solid from DFT

Manipulating Refractive Index in Organic Light. Emitting Diodes

High efficiency solar cells by nanophotonic design

Summary of Beam Optics

Effects of plasma treatment on the precipitation of fluorine-doped silicon oxide

EXPERIMENT 8. Monolayer Characterization: Contact angles, Reflection Infrared Spectroscopy, and Ellipsometry

Semilab Technologies for 450mm Wafer Metrology

Determination of AlAs optical constants by variable angle spectroscopic ellipsometry and a multisample analysis

ECE 695 Numerical Simulations Lecture 35: Solar Hybrid Energy Conversion Systems. Prof. Peter Bermel April 12, 2017

Transcription:

2014 J.A. Woollam Co., Inc. www.jawoollam.com 1 3B: Review Nina Hong U Penn, February 2014

2014 J.A. Woollam Co., Inc. www.jawoollam.com 2 Review 1A: Introduction to WVASE: Fun Quiz! 1B: Cauchy 2A: Pt-by-Pt and GenOsc 2B: Advanced GenOsc 3A: Non-Idealities

2014 J.A. Woollam Co., Inc. www.jawoollam.com 3 Q1 If the left column shows the Psi and Delta for an ideal glass substrate, can you identify the complexity of the right column data? Ideal Surface Roughness

2014 J.A. Woollam Co., Inc. www.jawoollam.com 4 Q2 If the left column shows the Psi and Delta for an ideal glass substrate, can you identify the complexity of the right column data? Ideal Backside Reflection

2014 J.A. Woollam Co., Inc. www.jawoollam.com 5 Q3 If the left column shows the Psi and Delta for a Si substrate, can you identify the complexity of the right column data? Ideal Backside Reflection

2014 J.A. Woollam Co., Inc. www.jawoollam.com 6 Q4 What is the substrate type of the following ellipsometric data? 1Transparent substrate (dielectric) 2 Semi-absorbing substrate (semiconductor) 3 Absorbing substrate (Metal)

2014 J.A. Woollam Co., Inc. www.jawoollam.com 7 Q5 What does ellipsometric measurement probe? 1 Size of electric field 2 Shape of electric field Less Intense Y E Different Size (Intensity). More Intense Y E X Same Shape! (Polarization) X

2014 J.A. Woollam Co., Inc. www.jawoollam.com 8 Q6 Pseudo Optical Constants <n>, <k> Which one is corresponding to a single reflection on surface? 1 2

2014 J.A. Woollam Co., Inc. www.jawoollam.com 9 Q7 Unknown Film on Glass Which spectral range does the film look transparent?

2014 J.A. Woollam Co., Inc. www.jawoollam.com 10 Data Analysis Strategies Substrates S-1: Opaque Substrates S-2: Semiconductor substrates S-3: Transparent substrates Films F-1: Transparent films F-2: Semi-Absorbing films F-3: Absorbing films

Psi in degrees Delta in degrees 2014 J.A. Woollam Co., Inc. www.jawoollam.com 11 S-1 Opaque Substrates Psi stays near 45 Delta away from 0 or 180 46 180 44 150 42 40 38 65 75 85 120 90 60 30 65 75 85 36 200 400 600 800 1000 1200 0 200 400 600 800 1000 1200

2014 J.A. Woollam Co., Inc. www.jawoollam.com 12 S-1 Opaque Substrates Two Categories Bulk Samples No overlayers. Polished metal. Optically thick films. Fit Strategy Invert psi and delta for n and k. Normal fit from reference values 2 Known: Ψ, Δ 2 Unknowns: n, k Example 1 Optically Thick Cr Film

2014 J.A. Woollam Co., Inc. www.jawoollam.com 13 S-2 Semiconductor Substrates Psi follows shape of absorption Delta away from 0 or 180 when absorbing 50 200 Y in degrees 40 30 20 10 55 65 75 D in degrees 150 100 50 55 65 75 0 200 400 600 800 1000 1200 0 200 400 600 800 1000 1200

2014 J.A. Woollam Co., Inc. www.jawoollam.com 14 S-2 Semiconductor Substrates Bulk semiconductor n&k are well known Crystalline structure insures repeatable optical/electrical properties. Doping NOT important at VIS wavelengths Doping Is important in the MID-IR, however (5 micron or longer). Fit Strategy Use published index values. Fit for oxide thickness. Example 2 Bare Si Wafer

2014 J.A. Woollam Co., Inc. www.jawoollam.com 15 S-3 Transparent Substrates Psi flat and smooth- follows shape of index Delta = 0,180 - except for surface films Y in degrees 30 25 20 15 10 5 0 0 300 600 900 1200 1500 1800 45 55 65 75 D in degrees 180 150 120 90 60 30 0.5nm roughness 0 0 300 600 900 1200 1500 1800 45 55 65 75

2014 J.A. Woollam Co., Inc. www.jawoollam.com 16 S-3 Transparent Substrates Fit Strategy Cauchy Complexities Surface roughness (Add srough) Backside reflection (Suppress or Model correction) How to obtain small k-values Add Transmission data and fit k only. 25 Example 3 10mm bk7 (Two dat files: SE and T) Experimental Data 200 Experimental Data 1.0 Experimental Data Y in degrees 20 15 10 Exp E 55 Exp E 57.5 Exp E 60 Exp E 62.5 Exp E 65 Exp E 67.5 Exp E 70 D in degrees 150 100 50 Exp E 55 Exp E 57.5 Exp E 60 Exp E 62.5 Exp E 65 Exp E 67.5 Exp E 70 Transmission 0.8 0.6 0.4 Exp pt 0 5 0 0.2 0 0 300 600 900 1200 1500 1800-50 0 300 600 900 1200 1500 1800 0.0 200 400 600 800 1000

2014 J.A. Woollam Co., Inc. www.jawoollam.com 17 F-1 Transparent Films Each reflected wave will have a different phase and amplitude. ~n 0 ~n 1 ~n 2 Delay caused by both index and thickness

2014 J.A. Woollam Co., Inc. www.jawoollam.com 18 Interference shifts toward red as film grows. More Interference oscillations as film grows. 100 F-1 Thickness Effects 0nm 25nm 50nm 75nm 100nm 200nm 300nm 400nm 500nm Y in degrees 80 60 40 20 0 0 300 600 900 1200 1500 1800

2014 J.A. Woollam Co., Inc. www.jawoollam.com 19 F-1 Effect of Film Index Index difference affects Interference oscillations (Mostly Psi amplitude). n=1.5 n=1.75 n=2.0 n=2.25 n=2.5 n=2.75 n=3.0 n=3.25 n=3.5 n=3.75 n=4.0 Y in degrees 100 80 60 40 20 0 0 300 600 900 1200 1500 1800

2014 J.A. Woollam Co., Inc. www.jawoollam.com 20 F-1 Using This Information Adjust Index to match Psi peak height. Adjust Thickness to match oscillation period. 90 Experimental Data Y in degrees 75 60 45 30 15 n=1.5 n=2 n=2.5 n=3 Exp E 75 0 600 700 800 900 1000 1100 Y in degrees 30 25 20 15 10 5 Generated and Experimental Model Fit Exp E 75 0 600 700 800 900 1000 1100

F-1 Cauchy Procedure 1. Adjust An parameter to approximate index. Psi amplitude can help estimate. 2. Adjust thickness to match # of oscillations. 3. Fit Thickness, An and Bn. 4. Add Cn. Does it improve the MSE? 5. Normal dispersion??? Normal Fit IF Model is Close to Answer! RESET if fit fails!!! Example 4 Al2O3 on Si 2014 J.A. Woollam Co., Inc. www.jawoollam.com 21

2014 J.A. Woollam Co., Inc. www.jawoollam.com 22 F-2 Semi-Absorbing Films If light is absorbed before returning to surface, only top reflection is seen (Film appears as Substrate) 300 250 D in degrees 200 150 100 50 0-50 120 150 180 210 240 270 300

2014 J.A. Woollam Co., Inc. www.jawoollam.com 23 Fit Cauchy to Transparent region determine thickness. F-2 Choosing a Model Fix thickness and fit n,k at all wavelengths using point-by-point fit. When in doubt, convert to Genosc to insure Kramers-Kronig consistency. Surface roughness, grading, and anisotropy can be added if they improve MSE. Example 5 Semi Absorbing Film on Si

2014 J.A. Woollam Co., Inc. www.jawoollam.com 24 F-2 Surface Roughness / Index Grading Roughness sensitivity when material is absorbing or has high index. Grading and roughness often correlated when both lower index toward surface. When grading increases index toward surface, may also be sensitive to roughness.

F-3 Absorbing Films Most metal films are opaque above 50-100nm thickness. Absorption at all wavelengths prevents periodic oscillations from thickness. Data will appear similar to absorbing substrates: Psi large and never close to zero. Delta between 0 and 180. Pseudos from different angles the same. 2014 J.A. Woollam Co., Inc. www.jawoollam.com 25

2014 J.A. Woollam Co., Inc. www.jawoollam.com 26 F-3 Multiple angles Y in degrees D in degrees 40 35 30 25 20 Exp E 45 Exp E 55 Exp E 65 Exp E 75 15 200 400 600 800 1000 1200 180 160 140 120 100 80 60 Exp E 45 Exp E 55 Exp E 65 Exp E 75 40 200 400 600 800 1000 1200 < 1 > No new information! 5.0 2.5 0.0-2.5-5.0 0 200 400 600 800 1000 1200 Exp < 1 >-E 65 Exp < 1 >-E 75 Exp < 2 >-E 65 Exp < 2 >-E 75 30 25 20 15 10 5 < 2 >

2014 J.A. Woollam Co., Inc. www.jawoollam.com 27 F-3 Modeling? Challenge: More unknown sample properties than measured values. Solution: Measure additional information or reduce number of unknown properties. n(l), k(l) Known Substrate Y(l), D(l) d

2014 J.A. Woollam Co., Inc. www.jawoollam.com 28 Opaque Layer Transparent Region Optical Constant Parameterization Multiple Angles Interference Enhancement SE + Intensity Multiple-Sample In-Situ F-3 Methods for Absorbing Films Multiple-Ambient J. Hilfiker, Survey of methods to characterize thin absorbing films with Spectroscopic Ellipsometry Thin Solid Films 516 (2008) 7979-7989.

Preferred Method #1 Multi-Layer Strategies Measure n,k from single-layers: use dispersion models. Fit thickness only. If poor fit, add dispersion parms. for least stable film. Film A Film B Film C Substrate Substrate Film B Film C Film A Substrate Substrate 2014 J.A. Woollam Co., Inc. www.jawoollam.com 29

Preferred Method #2 Multi-Layer Strategies Measure n,k for each new layer with previous layers fixed: use dispersion models. If poor fit, add thickness and then dispersion parameters for previous layers. Film C Film B Film B Film A Film A Film A Substrate Substrate Substrate 2014 J.A. Woollam Co., Inc. www.jawoollam.com 30

6 Example 6-poly Si on 100nm TOx on Si Two Film layers Unknown thickness poly Si ~100nm Thermal Oxide Build your own method to fit the data. 2014 J.A. Woollam Co., Inc. www.jawoollam.com 31

2014 J.A. Woollam Co., Inc. www.jawoollam.com 32 Thank You & Good Luck!