GenX TM V IGBT w/diode Ultra Low Vsat PT IGBT for up to khz switching IXGH8NAD S = V = 8A (sat).v TO-7 AD Symbol Test Conditions Maximum Ratings S = C to C V V CGR = C to C, R GE = MΩ V V GES Continuous ± V V GEM Transient ± V = C 8 A M = C, ms A SSOA V GE = V, = C, R G = Ω M = 9 A (RBSOA) Clamped inductive load @ S P C = C W -... + C M C T stg -... + C T L.mm (.in.) from case for s C T SOLD Plastic body for seconds C M d Mounting torque./ Nm/lb.in. Weight g Symbol Test Conditions Characteristic Values ( = C unless otherwise specified) Min. Typ. Max. V GE(th) = μa, = V GE.. V G C E G = Gate C = Collector E = Emitter Tab = Collector Features Tab Optimized for Low Conduction Losses Square RBSOA Anti-Parallel Ultra Fast Diode High Current Handling Capability International Standard Package Advantages High Power Density Low Gate Drive Requirement Applications Power Inverters UPS Motor Drives SMPS PFC Circuits Battery Chargers Welding Machines Lamp Ballasts Inrush Current Protection Circuits ES =.8 S, V GE = V μa = C.7 ma I GES = V, V GE = ± V ± na (sat) = A, V GE = V, Note.8. V IXYS CORPORATION, All Rights Reserved DS999B(/)
IXGH8NAD Symbol Test Conditions Characteristic Values ( = C unless otherwise specified) Min. Typ. Max. TO-7 (IXGH) Outline g fs = A, = V, Note 8 S C ies 9 pf C oes = V, V GE = V, f = MHz 7 pf C res pf Q g nc Q ge = A, V GE = V, =. S nc Q gc nc ns t ri Inductive Load, = C ns = A, V GE = V.9 mj = 8V, R G = Ω ns t fi Note ns E off.9 mj ns t ri Inductive Load, = C ns = A, V GE = V.97 mj = 8V, R G = Ω ns t fi Note 8 ns E off. mj R thjc. C/W R thcs. C/W Terminals: - Gate - Emitter e P - Collector Dim. Millimeter Inches Min. Max. Min. Max. A.7..8.9 A...87. A...9.98 b.... b....8 b.87... C..8.. D.8..89.8 E.7... e..7.. L 9.8..78.8 L..77 P.... Q.89... R..9.7. S. BSC BSC Reverse Diode (FRED) ( = C, Unless Otherwise Specified) Characteristic Value Symbol Test Conditions Min. Typ. Max. V F I. V F = A,V GE = V, Note = C. V I RM = A,V GE = V, -di F = A/μs, = C A V t R = V = C rr ns = A, V R = V, -di F = A/μs ns R thjc.9 C/W Notes:. Pulse test, t μs, duty cycle, d %.. Switching times & energy losses may increase for higher (clamp), or R G. IXYS Reserves the Rght to Change Limits, Test Conditions and Dimensions. IXYS MOSFETs and IGBTs are covered,8,9,9,8,9,9,7,8,,,, B,8,,77,8 7,,7 B 7,7,8B by one or more of the following U.S. patents:,8,7,7,8,,7,8,,9, B,,,7, B,79,9 7,,97 B,88,,,79,87,7,8,7,,78 B,8,,7,,77,78 B 7,7,7
IXGH8NAD Fig.. Output Characteristics @ = ºC Fig.. Extended Output Characteristics @ = ºC 7 V GE = V V V V GE = V V V 9V 7V 8 9V.....8.....8 - Volts 7V 8 - Volts 7 Fig.. Output Characteristics @ = ºC V GE = V V V.. V GE = V Fig.. Dependence of (sat) on 9V 7V VCE(sat) - Normalized....9.8 = A.....8.....8 - Volts.7 - - 7 - Degrees Centigrade Fig.. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage Fig.. Input Admittance.8 = ºC 8. VCE - Volts... A A 8 = ºC ºC - ºC.8 7 8 9 V GE - Volts..... 7. 7. 8. 8. 9. 9. V GE - Volts IXYS CORPORATION, All Rights Reserved
IXGH8NAD Fig. 7. Transconductance Fig. 8. Gate Charge 7 = - ºC ºC ºC = V I G = ma g f s - Siemens VGE - Volts 8 7 8 9 - Amperes 8 Q G - NanoCoulombs, Fig. 9. Capacitance Fig.. Reverse-Bias Safe Operating Area 9 Capacitance - PicoFarads, f = MHz C ies C oes C res 8 7 = ºC R G = Ω dv / dt < V / ns - Volts - Volts Fig.. Maximum Transient Thermal Impedance Z(th)JC - ºC / W...... Pulse Width - Seconds IXYS Reserves the Rght to Change Limits, Test Conditions and Dimensions.
IXGH8NAD Eoff - MilliJoules 8 Fig.. Inductive Switching Energy Loss vs. Gate Resistance E off - - - - = ºC, V GE = V = 8V 7 - MilliJoules Eoff - MilliJoules 9 7 Fig.. Inductive Switching Energy Loss vs. Collector Current E off - - - - R G = Ω, V GE = V = 8V = ºC - MilliJoules = A 8 8 R G - Ohms = ºC - Amperes Eoff - MilliJoules 9 8 7 Fig.. Inductive Switching Energy Loss vs. E off - - - - R G = Ω, V GE = V = 8V = A 7 8 9 - Degrees Centigrade - MilliJoules t f i 8 Fig.. Inductive Turn-off Switching Times vs. Gate Resistance t f i - - - - = ºC, V GE = V = 8V A A 8 A A A 9 8 7 R G - Ohms 8 8 7 7 Fig.. Inductive Turn-off Switching Times vs. Collector Current 8 Fig. 7. Inductive Turn-off Switching Times vs. t f i t f i - - - - R G = Ω, V GE = V = 8V = ºC t f i 8 t f i - - - - R G = Ω, V GE = V = 8V, A, A, A, A = ºC - Amperes 7 8 9 - Degrees Centigrade IXYS CORPORATION, All Rights Reserved
IXGH8NAD t r i 9 8 7 Fig. 8. Inductive Turn-on Switching Times vs. Gate Resistance t r i - - - - = ºC, V GE = V = 8V = A 8 8 R G - Ohms 8 8 t r 7 Fig. 9. Inductive Turn-on Switching Times vs. Collector Current = ºC ºC < < ºC = ºC t r i - - - - R G = Ω, V GE = V = 8V - Amperes 8 7 t r i 8 7 Fig.. Inductive Turn-on Switching Times vs. = A t r i - - - - R G = Ω, V GE = V = 8V 8 7 7 8 9 - Degrees Centigrade IXYS Reserves the Rght to Change Limits, Test Conditions and Dimensions. IXYS REF: G_8NA() 7--8-A
IXGH8NAD IF A = C Q r nc 8 = C V R = V = A = A = A I RM A = C V R = V = A = A = A = C = C V A/μs A/μs 8 V F -di F -di F Fig.. Forward current versus V F Fig.. Reverse recovery charge Q r versus -di F Fig.. Peak reverse current I RM versus -di F K f... I RM t rr 9 ns 8 = A = A = A = C V R = V V FR V = C = A t fr V FR. μs t fr.7. 7. Q r.. 8 C A/μs 8 -di F. A/μs 8 di F Fig.. Dynamic parameters Q r, I RM Fig.. Recovery time t rr versus -di F Fig.. Peak forward voltage V FR and versus t fr versus di F K/W. Z thjc Constants for Z thjc calculation: i R thi (K/W) t i (s)...9.... DSEP 9-...... s t Fig. 7. Transient thermal resistance junction to case IXYS CORPORATION, All Rights Reserved