V XPT TM IGBT GenX3 TM w/ Diode High-Speed IGBT for - khz Switching IXYHNC3D S = V 9 = A (sat).v t fi(typ) = 38ns Symbol Test Conditions Maximum Ratings S = C to C V V CGR = C to C, R GE = MΩ V V GES Continuous ± V V GEM Transient ±3 V = C (Chip Capability) 6 A 9 = 9 C A I F = C A M = C, ms A I A = C A E AS = C mj SSOA V GE = V, T VJ = C, R G = Ω M = 8 A (RBSOA) Clamped Inductive Load @ S P C = C 8 W -... + C M C T stg -... + C T L Maximum Lead Temperature for Soldering 3 C T SOLD.6 mm (.6in.) from Case for s 6 C M d Mounting Torque.3/ Nm/lb.in. Weight 6 g TO-7 AD G C E Tab G = Gate C = Collector E = Emitter Tab = Collector Features Optimized for Low Switching Losses Square RBSOA Positive Thermal Coefficient of Vce(sat) Anti-Parallel Ultra Fast Diode Avalanche Rated High Current Handling Capability International Standard Package Advantages High Power Density Low Gate Drive Requirement Symbol Test Conditions Characteristic Values ( = C, Unless Otherwise Specified) Min. Typ. Max. BS = μa, V GE = V V V GE(th) = μa, = V GE 3.. V ES = S, V = V μa GE = C μa I GES = V, V GE = ±V ± na (sat) = A, V GE = V, Note. V = C.8 V Applications High Frequency Power Inverters UPS Motor Drives SMPS PFC Circuits Battery Chargers Welding Machines Lamp Ballasts IXYS CORPORATION, All Rights Reserved DS7B(/3)
IXYHNC3D Symbol Test Conditions Characteristic Values ( = C Unless Otherwise Specified) Min. Typ. Max. g fs = A, = V, Note S C ies 88 pf C oes = V, V GE = V, f = MHz pf C res pf Q g(on) 8 nc Q ge = A, V GE = V, =. S nc Q gc 38 nc ns t ri Inductive load, = C 6 ns = A, V GE = V 3.9 mj =. S, R G = Ω ns t fi Note 38 ns E off.66. mj 7 ns t ri Inductive load, = C 7 ns = A, V GE = V 8. mj =. S, R G = Ω ns t fi Note 38 ns E off.7 mj R thjc.6 C/W R thcs. C/W TO-7 (IXYH) Outline 3 Terminals: - Gate 3 - Emitter e P - Collector Dim. Millimeter Inches Min. Max. Min. Max. A.7.3.8.9 A...87. A..6.9.98 b.... b.6.3.6.8 b.87 3..3.3 C..8.6.3 D.8.6.89.8 E.7 6.6.6.6 e..7.. L 9.8.3.78.8 L..77 P 3. 3.6.. Q.89 6..3. R.3.9.7.6 S 6. BSC BSC Reverse Diode (FRED) ( = C, Unless Otherwise Specified) Characteristic Value Symbol Test Conditions Min. Typ. Max. V F 3. V I F = 3A,V GE = V, Note = C.7 V I RM 9 A I F = 3A,V GE = V, -di F /dt = A/μs, = C t rr V R = 6V = C 9 ns R thjc.9 C/W Notes:. Pulse test, t 3μs, duty cycle, d %.. Switching times & energy losses may increase for higher (clamp), or R G. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered,83,9,93,8,9,96,37,8 6,6,66 6,,6 B 6,683,3 6,77,8 7,,73 B 7,7,338B by one or more of the following U.S. patents:,86,7,7,8,63,37,38, 6,9,3 B 6,3,33 6,7, B 6,79,69 7,63,97 B,88,6,3,796,87,7,86,7 6,36,78 B 6,83, 6,7,63 6,77,78 B 7,7,37
IXYHNC3D Fig.. Output Characteristics @ = ºC Fig.. Extended Output Characteristics @ = ºC 8 7 6 3 V GE = V 3V V V V 9V 8V 8 6 V GE = V 3V V V V 9V 7V 8V 6V 3 6 7V 6V 3 8 7 6 3 Fig. 3. Output Characteristics @ = ºC V GE = V 3V V V 9V 3 6 7 8 9 8V 7V 6V V VCE(sat) - Normalized.8...6..8 V GE = V Fig.. Dependence of (sat) on = 8A = A = A. - - 7 7 - Degrees Centigrade 9 Fig.. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage = ºC 8 7 6 Fig. 6. Input Admittance = - ºC ºC ºC VCE - Volts 8 7 6 A = 8A 3 3 A 6 7 8 9 3 V GE - Volts.... 6. 6. 7. 7. 8. 8. 9. 9... V GE - Volts IXYS CORPORATION, All Rights Reserved
IXYHNC3D Fig. 7. Transconductance Fig. 8. Gate Charge 8 6 = - ºC = 6V = A ºC I G = ma g f s - Siemens 6 ºC VGE - Volts 8 6 8 3 6 7 8 9 - Amperes 3 6 7 8 9 Q G - NanoCoulombs Fig. 9. Capacitance Fig.. Reverse-Bias Safe Operating Area, 9 8 Capacitance - PicoFarads, C ies C oes 7 6 3 = ºC f = MHz C res R G = Ω dv / dt < V / ns 3 3 3 6 7 8 9 3 Fig.. Maximum Transient Thermal Impedance Z(th)JC - ºC / W........ Pulse Width - Second IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYHNC3D Fig.. Inductive Switching Energy Loss vs. Gate Resistance 3. Fig. 3. Inductive Switching Energy Loss vs. Collector Current 3 E off - - - - = ºC, V GE = V = 6V. E off - - - - R G = Ω, V GE = V = 6V Eoff - MilliJoules 3 = 8A = A 3 - MilliJoules Eoff - MilliJoules... = ºC - MilliJoules. = ºC 3 3 R G - Ohms. 3 6 7 8 - Amperes 3. Fig.. Inductive Switching Energy Loss vs. 3 Fig.. Inductive Turn-off Switching Times vs. Gate Resistance Eoff - MilliJoules 3...... E off - - - - R G = Ω, V GE = V = 6V = 8A = A 3 - MilliJoules t f i 9 7 3 t f i - - - - = ºC, V GE = V = 6V = 8A = A 3. 7 - Degrees Centigrade 3 3 R G - Ohms Fig. 6. Inductive Turn-off Switching Times vs. Collector Current 8 Fig. 7. Inductive Turn-off Switching Times vs. 6 t f i - - - - R G = Ω, V GE = V = 6V 6 t f i - - - - R G = Ω, V GE = V = 6V t f i 8 6 = ºC, ºC t f i 8 6 = A, 8A 3 8 3 6 7 8 - Amperes 6 7 - Degrees Centigrade IXYS CORPORATION, All Rights Reserved
IXYHNC3D Fig. 8. Inductive Turn-on Switching Times vs. Gate Resistance Fig. 9. Inductive Turn-on Switching Times vs. Collector Current 6 3 36 t r i - - - - = ºC, V GE = V = 6V 8 t r i - - - - R G = Ω, V GE = V = 6V 3 3 t r i 3 = 8A = A 8 6 t r i 6 8 = ºC = ºC 3 8 6 3 3 R G - Ohms 3 6 7 8 - Amperes Fig.. Inductive Turn-on Switching Times vs. 38 t r i - - - - 36 3 R G = Ω, V GE = V = 6V 3 t r i 3 = 8A 3 3 8 6 = A 7 - Degrees Centigrade Fig.. Maximum Transient Thermal Impedance (Diode). Z(th)JC - ºC / W........ Pulse Width - Second IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: IXY_NC3(A) --
IXYHNC3D Fig.. Forward Current I F vs V F Fig. 3. Reverse Recovery Charge Q RM vs. -di F /dt 7 6 T VJ = ºC V R = 6V I F [A] 3 T VJ = ºC ºC ºC Q RM [µc] 3 I F = 6A 3A A... 3 3. V F [V] Fig.. Peak Reverse Current I RM vs. -di F /dt Fig.. Dynamic Parameters Q RM, I RM vs. T VJ 6 T VJ = ºC V R = 6V I RM [A] 3 I F = 6A, 3A, A IRM & QRM [normalized].. I RM Q RM 6 8 6 8 6 T VJ [ºC] Fig. 6. Recovery Time t rr vs. -di F /dt Fig. 7. Peak Forward Voltage V FR, trr vs -di F /dt. T VJ = ºC V R = 6V T VJ = ºC I F = 3A 8 t rr [ns] 6 I F = 6A 3A A V FR [V] 8 6 t rr V FR.8.6 t rr [µs].. 6 8 3 6 7 8 9 IXYS CORPORATION, All Rights Reserved