Silicon P-Channel MOS FET November 1996 Application High speed power switching Features Low on-resistance High speed switching Low drive current 4 V gate drive device Can be driven from V source Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline DPAK-1 4 4 1 2 3 1 2 3 D G 1. Gate 2. Drain 3. Source 4. Drain S
Absolute Maximum Ratings (Ta = 2 C) Item Symbol Ratings Unit Drain to source voltage V DSS 6 V Gate to source voltage V GSS ±2 V Drain current I D 3 A Drain peak current I D(pulse) * 1 2 A Body to drain diode reverse drain current I DR 3 A Channel dissipation Pch* 2 2 W Channel temperature Tch 1 C Storage temperature Tstg to +1 C Notes 1. PW 1 µs, duty cycle 1% 2. Value at T C = 2 C 2
Electrical Characteristics (Ta = 2 C) Item Symbol Min Typ Max Unit Test conditions Drain to source breakdown V (BR)DSS 6 V I D = ma, V GS = voltage Gate to source breakdown voltage V (BR)GSS ±2 V I G = ±1 µa, V DS = Gate to source leak current I GSS ±1 µa V GS = ±16 V, V DS = Zero gate voltage drain current I DSS µa V DS = V, V GS = Gate to source cutoff voltage V GS(off).. V I D = ma, V DS = V Static drain to source on state resistance R DS(on).28.4 Ω I D = A, V GS = V* 1.4. I D = A, V GS = 4 V* 1 Forward transfer admittance y fs 1.6 2.7 S I D = A, V DS = V* 1 Input capacitance Ciss 42 pf V DS = V, V GS =, f = 1 MHz Output capacitance Coss 22 pf Reverse transfer capacitance Crss 6 pf Turn-on delay time t d(on) ns I D = A, V GS = V, R L = 1 Ω Rise time t r 3 ns Turn-off delay time t d(off) 16 ns Fall time t f 8 ns Body to drain diode forward voltage Body to drain diode reverse recovery time Note 1. Pulse test V DF. V I F = 3 A, V GS = t rr 14 ns I F = 3 A, V GS =, di F /dt = A/µs 3
3 Power vs. Temperature Derating Channel Dissipation Pch (W) 2 1 1 1 Case Temperature T C ( C) Maximum Safe Operation Area..2.1 Operation in this Area is Limited by R DS (on) Ta = 2 C 1 µs 1 µs PW = 1 ms (1 Shot) 1 ms DC Operation (T C = 2 C)..1.3 3 3 Drain to Source Voltage V DS (V) 4 3 Typical Output Characteristics V V 4 V 3. V 3. V. V V GS =. V 4 6 8 Drain to Source Voltage V DS (V) 4 3 Typical Transfer Characteristics C T C = 2 C 7 C V DS = V 3 4 Gate to Source Voltage V GS (V) 4
Drain to Source Saturation Voltage V DS (on) (V)... Drain to Source Saturation Voltage vs. Gate to Source Voltage A A I D = A 4 6 8 Gate to Source Voltage V GS (V) Static Drain to Source on State Resistance R DS (on) (Ω) 2 1...2.1..2 Static Drain to Source on State Resistance vs. Drain Current V GS = 4 V V. Static Drain to Source on State Resistance R DS (on) (Ω) 1..8.6.4.2 4 Static Drain to Source on State Resistance vs. Temperature I D =, A A V GS = 4 V V GS = V A A A 4 8 12 16 Case Temperature T C ( C) Forward Transfer Admittance yfs (S) 1 2 1..2.1. Forward Transfer Admittance vs. Drain Current V DS = V C T C = 2 C 7 C.1.2.
Body to Drain Diode Reverse Recovery Time Reverse Recovery Time t rr (ns) 2 1 2 di/dt = A/µs, V GS = 1 Ta = 2 C.1.2. Reverse Drain Current I DR (A) 1, Typical Capacitance vs. Drain to Source Voltage Ciss Capacitance C (pf) 1 1 V GS = f = 1 MHz Coss Crss 3 4 Drain to Source Voltage V DS (V) Drain to Source Voltage V DS (V) 4 6 8 V DS Dynamic Input Characteristics V I D = 3 A V DD = V V GS V V DD = V V V 8 16 24 32 4 Gate Charge Qg (nc) 4 8 2 6 Gate to Source Voltage V GS (V) Switching Characteristics Switching Time t (ns) 2 t d (off) 1 t f V GS = V PW = 2 µs, duty < 1% 2 t r 1 t d (on).1.2. 6
Reverse Drain Current I DR (A) 4 3 Reverse Drain Current vs. Source to Drain Voltage V V V GS =, V.4.8.2.6. Source to Drain Voltage V SD (V) Normalized Transient Thermal Impedance γ S (t) 3 1..3.1.3.1 1 µ D = 1 T C = 2 C..2.1..2.1 1 Shot Pulse Normalized Transient Thermal Impedance vs. Pulse Width θch c (t) = γ S (t) θch c θch c = 6.2 C/W, T C = 2 C P DM T PW D = PW T 1 µ 1 m 1 m 1 m 1 1 Pulse Width PW (s) Switching Time Test Circuit Vin Monitor D.U.T Vout Monitor Vin V Ω R L V DD =.. 3 V Vin 1% Waveforms 9% 9% 9% Vout 1% 1% t d (on) t r t d (off) t f 7
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