High Power Infrared Emitter (850 nm) Version 1.6/ OS-IN SFH 4258

Similar documents
IR OSLUX (810nm) - 20 Version 1.1 SFH 4780S

High Power Infrared Emitter (850 nm) Version 1.5 SFH 4253 R

Infrared Emitter (850 nm) and Infrared Emitter (940 nm) Version 1.0 SFH 7252

High Power Infrared Emitter (940 nm) Version 1.4 SFH 4045N

OSLON Black Flat (IR broad band emitter) Version 1.0 SFH 4735

Narrow beam LED in MIDLED package (940 nm) Version 1.6 SFH 4646

Narrow beam LED in MIDLED package (940 nm) Version 1.6 / acc. to OS-PCN A SFH 4640

High Power Infrared Emitter (850 nm) Version 1.9 SFH 4250S

High Power Infrared Emitter (850 nm) Version 1.0 SFH 4278S

High Speed PIN Photodiode Version 1.2 SFH 2701

Silicon NPN Phototransistor with V λ Characteristics Version 1.3 SFH 3410R

OSLON Black Series (850 nm) - 80 Version 1.3/ acc. to OS-PCN A SFH 4713A

OSLON Black Series (850 nm) - 90 Version 1.4 SFH 4715AS

OSLON Black Series (940 nm) - 90 Version 1.6 SFH 4725S

Silicon Photodiode with Vλ Characteristic Version 1.3 SFH 2430

Silicon PIN Photodiode Version 1.8 SFH 2400

Silicon PIN Photodiode with Enhanced Blue Sensitivity; in SMT Version 1.7 BPW 34 BS

Silicon Photodiode with Vλ Characteristic Version 1.2 SFH 2240

Silicon NPN Phototransistor with V λ Characteristics Version 1.3 SFH 3410

Infrared-Emitter (850 nm) and Si-Phototransistor Version 1.3 SFH 7250

Silicon PIN Photodiode Version 1.5 BP 104 S

Silicon PIN Photodiode Preliminary Version 0.0 SFH DRAFT For Reference only. Subject to change without notice.

Silicon NPN Phototransistor with V λ Characteristics Version 1.3 SFH 3710

Silicon PIN Photodiode Version 1.3 SFH 2200

Silicon Photodiode with Vλ Characteristic Version 1.2 SFH 2440

Silicon NPN Phototransistor Version 1.4 SFH 3015 FA

High Power Infrared Emitter (850 nm) Version 1.6 SFH 4232A

OSLON Black Series (940 nm) - 80 Preliminary Version 0.0 SFH 4725AS A01. DRAFT For Reference only. Subject to change without notice.

BIOFY Sensor Version 1.1 SFH 7070

Applications Photointerrupters IR remote control of hi-fi and TV sets, dimmers, remote controls of various equipment

SMT Multi TOPLED Version 1.3 SFH 331-JK

Silicon PIN Photodiode with Daylight Filter; in SMT as Reverse Gullwing Version 1.5

PLPVQ 940A. Preliminary For Reference only. Subject to change. VCSEL pulsed laser in small footprint QFN W pulsed power Preliminary Version 0.

Silicon PIN Photodiode with Daylight Blocking Filter Version 1.4 BPW 34 FSR

SFH Micro SIDELED. Applications. Features: Ordering Information. Produktdatenblatt Version 1.1 SFH High Power Infrared Emitter (850 nm)

Infrared Emitter (850 nm) Version 1.3 SFH 4855

= 20 ms I F. = 20 ms E e. SFH mw/cm² 6 mw/cm² Q65111A2992 SFH 4056-NP mw/cm² 6 mw/cm² Q65111A9688

BIOFY Sensor Draft Version.3 SFH7072. Draft - This design is for Reference only. Subject to change without notice. DRAFT - For reference only.

High Power Infrared Emitter (940 nm) Version 1.4 SFH Features: High Power Infrared LED Short switching times

SFH 4646 MIDLED. Applications. Features: Ordering Information. Produktdatenblatt Version 1.1 SFH Narrow beam LED in MIDLED package (940 nm)

Infrared Emitter (850 nm) Version 1.4 SFH 4554

Infrared Emitter (850 nm) Version 1.6 SFH 4550

High Power Infrared Emitter (940 nm) Version 1.3 SFH Features: High Power Infrared LED Emission angle ± 11 High radiant intensity

= 25 C Parameter Symbol Values. -40 C 100 C -40 C 100 C Forward current I F. max. 100 ma Surge current t p I FSM. max. 5 V Power consumption P tot

Infrared Emitter (850 nm) Version 1.2 SFH 4356P. Features: Wavelength 850nm Short switching time Good spectral match to silicon photodetectors

SFH OSLON Black Flat. Applications. Features: Ordering Information. Produktdatenblatt Version 1.1 SFH 4735

Applications For a variety of manufacturing and monitoring applications, which require beam interruption Photointerrupters

SFH 2200 TOPLED. Applications. Features: Ordering Information. Produktdatenblatt Version 1.1 SFH Silicon PIN Photodiode. Electronic Equipment

SFH DIL SMT Ambient Light Sensor. Applications. Features: Ordering Information. Produktdatenblatt Version 1.1 SFH 2430

SFH 2700 FA CHIPLED. Applications. Features: Ordering Information. Produktdatenblatt Version 1.1 SFH 2700 FA. Silicon PIN Photodiode

SFH 4776 SYNIOS P2720. Applications. Features: Ordering Information. Produktdatenblatt Version 1.1 SFH IR broad band emitter

SFH 4716S. OSLON Black. Applications. Features: Ordering Information. Produktdatenblatt Version 1.1 SFH 4716S. OSLON Black Series (850 nm) - 150

SFH 2716 CHIPLED. Applications. Features: Ordering Information. Produktdatenblatt Version 1.1 SFH Silicon PIN Photodiode with Vλ Characteristics

SFH 3716 CHIPLED. Applications. Features: Ordering Information. Produktdatenblatt Version 1.1 SFH 3716

SFH 2400 FA. Smart DIL. Applications. Features: Ordering Information. Produktdatenblatt Version 1.1 SFH 2400 FA. Silicon PIN Photodiode

SFH 4727AS A01. OSLON Black. Applications. Features: Ordering Information. Produktdatenblatt Version 1.1 SFH 4727AS A01

SFH TOPLED Lens. Applications. Features: Ordering Information. Produktdatenblatt Version 1.1 SFH Silicon NPN Phototransistor

GaAlAs Light Emitting Diode (660 nm) Version 1.3 SFH 464 E7800

SFH 4714A. OSLON Black. Applications. Features: Ordering Information. Produktdatenblatt Version 1.1 SFH 4714A. OSLON Black Series (850 nm) - 150

= 20 ms I e. = 20 ms I F

BPW 34 BS DIL SMT. Applications. Features: Ordering Information. Produktdatenblatt Version 1.1 BPW 34 BS

BP 104 S DIL SMT. Applications. Features: Ordering Information. Produktdatenblatt Version 1.1 BP 104 S. Silicon PIN Photodiode. LIDAR, Pre-Crash, ACC

BP 104 FS DIL SMT. Applications. Features: Ordering Information. Produktdatenblatt Version 1.1 BP 104 FS

SFH 4232A. Golden DRAGON. Applications. Features: Ordering Information. Produktdatenblatt Version 1.1 SFH 4232A. High Power Infrared Emitter (850 nm)

Type Photocurrent Ordering Code V CE. = 0.01 mw/cm² I PCE

Type Photocurrent Ordering Code V CE. = 0.1 mw/cm² I PCE

Ordering Information Type: Radiant Intensity Ordering Code I e [mw/sr] I F = 50 ma, t p = 20 ms SFH ( 0.63) Q62702P5053

GP PSLR31.14 DURIS S 5. Applications. Features: Produktdatenblatt Version 1.1. Architecture. Horticulture Lighting

LS G6SP. Advanced Power TOPLED. Applications. Features: Produktdatenblatt Version 1.1 LS G6SP

KW DMLN32.SB SYNIOS P2720. Applications. Features: Produktdatenblatt Version 1.1 KW DMLN32.SB

Silicon PIN Photodiode with very short switching time Version 1.3 SFH 229

Silicon PIN Photodiode Version 1.3 SFH 213

Silicon PIN Photodiode Version 1.3 BPX 65

Silicon PIN Photodiode Version 1.3 SFH 206 K

LG L29K SMARTLED Applications. Features: Produktdatenblatt Version 1.1 LG L29K

SYNIOS P2720. Applications. Features: Produktdatenblatt Version 1.1. KR DMLS Dual Binning

GW PSLR31.FM DURIS S 5. Applications. Features: Produktdatenblatt Version 1.1 GW PSLR31.FM. Horticulture Lighting

Silicon PIN Photodiode with integrated Temperature Sensor Version 1.4 SFH 2504

LUW CVBP.CE OSLON LX ECE. Applications. Features: Produktdatenblatt Version 1.1 LUW CVBP.CE. Custom Tuning Headlamps, LED & Laser & Night Vision

LS B6SP. Power SIDELED. Applications. Features: Produktdatenblatt Version 1.1 LS B6SP

KW DPLS31.SB SYNIOS E4014. Applications. Features: Produktdatenblatt Version 1.1 KW DPLS31.SB

LA G6SP - Dual binning

Silicon PIN Photodiode Version 1.3 SFH 203 PFA

KS DMLN31.23 SYNIOS P2720. Applications. Features: Produktdatenblatt Version 1.1 KS DMLN31.23

Applications Photointerrupters IR remote control of hi-fi and TV sets, dimmers, remote controls of various equipment

Applications Photointerrupters IR remote control of hi-fi and TV sets, dimmers, remote controls of various equipment

Silicon PIN Photodiode Version 1.4 BPW 34

Silicon PIN Photodiode with Enhanced Blue Sensitivity; in SMT Version 1.6 BPW 34 B

Silicon NPN Phototransistor Version 1.3 SFH 309

Silicon PIN Photodiode with Daylight Filter Version 1.5 BPW 34 FA

KW DMLQ31.SG SYNIOS P2720. Applications. Features: Produktdatenblatt Version 1.1 KW DMLQ31.SG

LR VH9F FIREFLY Applications. Features: Produktdatenblatt Version 1.1 LR VH9F

CW CBLPM4.PU. CERAMOS Gen 5. Applications. Features: Produktdatenblatt Version 1.1 CW CBLPM4.PU. Highly efficient lightsource, slim package design

LA G6SP. Advanced Power TOPLED. Applications. Features: Produktdatenblatt Version 1.1 LA G6SP

LW Y1SG. Micro SIDELED Applications. Features: Produktdatenblatt Version 1.1 LW Y1SG

LG Y876. Micro SIDELED Applications. Features: Produktdatenblatt Version 1.1 LG Y876. Electronic Equipment. White Goods

LA H9PP. OSLON Black Flat. Applications. Features: Produktdatenblatt Version 1.1 LA H9PP

KT DELQS1.12 TOPLED E1608. Applications. Features: Produktdatenblatt Version 1.1

LCG H9RM. OSRAM OSTAR Projection Cube. Applications. Features: Ordering Information. Produktdatenblatt Version 1.1 LCG H9RM

LE R Q8WP. OSRAM OSTAR Projection Compact. Applications. Features: Ordering Information. Produktdatenblatt Version 1.1 LE R Q8WP

Transcription:

216-9-23 High Power Infrared Emitter (85 nm) Version 1.6/ OS-IN-215-33 SFH 4258 Features: High Power Infrared LED Half angle: ± 15 High forward current allowed at high temperature Short switching times The product qualification test plan is based on the guidelines of AEC-Q11-REV-C, Stress Test Qualification for Automotive Grade Discrete Semiconductors. Applications Infrared Illumination for cameras IR data transmission Sensor technology Notes Depending on the mode of operation, these devices emit highly concentrated non visible infrared light which can be hazardous to the human eye. Products which incorporate these devices have to follow the safety precautions given in IEC 6825-1 and IEC 62471. Ordering Information Type: Radiant Intensity Ordering Code I e [mw/sr] I F = 1 ma, t p = 2 ms SFH 4258 11 ( 5) Q6511A2975 SFH 4258-VAW 63... 2 Q6511A7277 Note: Measured at a solid angle of Ω =.1 sr 216-9-23 1

Version 1.6/ OS-IN-215-33 SFH 4258 Maximum Ratings (T A = 25 C) Parameter Symbol Values Unit Operation and storage temperature range T op ; T stg -4... 1 C Reverse voltage V R 5 V Forward current I F 1 ma Surge current (t p 1 µs, D = ) I FSM 1 A Power consumption P tot 18 mw ESD withstand voltage (acc. to ANSI/ ESDA/ JEDEC JS-1 - HBM) V ESD 2 kv Thermal resistance junction - ambient 1) page 12 R thja 3 K / W Thermal resistance junction - soldering point 2) page 12 R thjs 14 K / W Characteristics (T A = 25 C) Parameter Symbol Values Unit Peak wavelength (I F = 1 ma, t p = 2 ms) Centroid wavelength (I F = 1 ma, t p = 2 ms) Spectral bandwidth at 5% of I max (I F = 1 ma, t p = 2 ms) (typ) λ peak 86 nm (typ) λ centroid 85 nm (typ) λ 3 nm Half angle (typ) ϕ ± 15 Dimensions of active chip area (typ) L x W.3 x.3 mm x mm Rise and fall time of I e ( 1% and 9% of I e max ) (I F = 1 ma, R L = 5 Ω) Forward voltage (I F = 1 ma, t p = 2 ms) Forward voltage (I F = 1 A, t p = 1 µs) Reverse current (V R = 5 V) Total radiant flux (I F =1 ma, t p =2 ms) (typ) t r, t f 12 ns (typ (max)) V F 1.5 ( 1.8) V (typ (max)) V F 2.4 ( 3) V I R not designed for reverse operation µa (typ) Φ e 7 mw 216-9-23 2

Version 1.6/ OS-IN-215-33 SFH 4258 Parameter Symbol Values Unit Temperature coefficient of I e or Φ e (I F = 1 ma, t p = 2 ms) Temperature coefficient of V F (I F = 1 ma, t p = 2 ms) Temperature coefficient of wavelength (I F = 1 ma, t p = 2 ms) Grouping (T A = 25 C) (typ) TC I -.5 % / K (typ) TC V -.7 mv / K (typ) TC λ.3 nm / K Group Min Radiant Intensity Max Radiant Intensity Typ Radiant Intensity I F = 1 ma, t p = 2 ms I F = 1 ma, t p = 2 ms I F = 1 A, t p = 25 µs I e, min [mw / sr] I e, max [mw / sr] I e, typ [mw / sr] SFH 4258-U2 5 8 52 SFH 4258-V 63 125 75 SFH 4258-AW 1 2 12 SFH 4258-BW1 16 25 16 Note: measured at a solid angle of Ω =.1 sr Only one group in one packing unit (variation lower 2:1). 216-9-23 3

Version 1.6/ OS-IN-215-33 SFH 4258 Relative Spectral Emission I rel = f(λ), T A = 25 C 1 I rel % 8 6 3) page 12 OHF4132 3) page 12 Radiant Intensity I e / I e (1 ma) = f(i F ), single pulse, t p = 25 µs, T A = 25 C I I e 1 1 e (1 ma) 1 5 OHL1715 4 1-1 5 2 7 75 8 85 Max. Permissible Forward Current I F, max = f(t A ), R thja = 3 K / W I F 12 ma 1 8 nm λ OHL1716 95 1 5-2 1-3 1 2 3 1 5 1 5 1 ma 1 3) page 12 Forward Current I F = f(v F ), single pulse, t p = 1 µs, T A = 25 C I F 1 A -1 1 5 I F OHL1713 6 4 2 1-2 5 1 5-3 2 4 6 8 C 12 T A 1-4.5 1 1.5 2 2.5 V 3 V F 216-9-23 4

Version 1.6/ OS-IN-215-33 SFH 4258 Permissible Pulse Handling Capability I F = f(t p ), T A = 25 C, duty cycle D = parameter OHF5438 1.2 t P A I t F D P = IF T 1. T.8.6.4.2 D =.5.1.2.33.5.1.2.5 1 Permissible Pulse Handling Capability I F = f(t p ), T A = 85 C, duty cycle D = parameter OHF578 1.1 t A P I t F D P = IF T T.9.8.7.6.5.4.3.2.1 D =.5.1.2.5.1.2.5 1-5 -4-3 1 1 1 1-2 1-1 t p 1 1 1 s 1 2 1-5 -4 1 1-3 -2 1 1-1 t p 1 1 1 s 1 2 Radiation Characteristics I rel = f(ϕ), T A = 25 C 3) page 12 4 3 2 1 OHL21 ϕ 1. 5.8 6 7 8 9.6.4.2 1 1..8.6.4 2 4 6 8 1 12 216-9-23 5

Version 1.6/ OS-IN-215-33 SFH 4258 Package Outline.8 (.31).6 (.24) 3. (.118) 2.6 (.12) 2.3 (.91) 2.1 (.83) 3 4 3.8 (.15) max. 2.1 (.83) 1.7 (.67).9 (.35).7 (.28) 3.4 (.134) 3. (.118) (2.4) (.95) 3.7 (.146) 3.3 (.13) 4 ±1.1 (.4) typ ø2.6 (.12) ø2.55 (.1) 2 1 Package marking 1.1 (.43).5 (.2).6 (.24).4 (.16).18 (.7).13 (.5) GPLY6127 Dimensions in mm (inch). Pinning Pin Description 1 Cathode 2 Anode 3 Anode 4 Anode Package Power TOPLED with Lens Approximate Weight: 37 mg 216-9-23 6

Version 1.6/ OS-IN-215-33 SFH 4258 Recommended Solder Pad Dimensions in mm. Reflow Soldering Profile Product complies to MSL Level 2 acc. to JEDEC J-STD-2D.1 3 C T 25 2 24 C 217 C t P t L T p OHA4525 245 C 15 t S 1 5 25 C 5 1 15 2 25 s 3 t 216-9-23 7

Version 1.6/ OS-IN-215-33 SFH 4258 Profil-Charakteristik Profile Feature Ramp-up Rate to Preheat* ) 25 C to 15 C Time t S T Smin to T Smax Ramp-up Rate to Peak* ) T Smax to T P Liquidus Temperature Time above Liquidus temperature Symbol Symbol t S T L t L Minimum 6 Pb-Free (SnAgCu) Assembly Recommendation 2 3 K/s 1 12 2 3 217 Maximum 8 1 Einheit Unit s K/s C s Peak Temperature Time within 5 C of the specified peak temperature T P - 5 K Ramp-down Rate* T P to 1 C Time 25 C to T P T P t P 245 25 1 2 3 All temperatures refer to the center of the package, measured on the top of the component * slope calculation DT/Dt: Dt max. 5 s; fulfillment for the whole T-range 3 4 48 C s K/s s Taping Dimensions in mm. 216-9-23 8

Version 1.6/ OS-IN-215-33 SFH 4258 Tape and Reel 12 mm tape with 2 pcs. on 18 mm reel W 1 D P P 2 F E W A N 13. ±.25 P 1 Label Direction of unreeling W 2 Direction of unreeling Leader: min. 4 mm * Trailer: min. 16 mm * *) Dimensions acc. to IEC 6286-3; EIA 481-D OHAY324 Tape dimensions [mm] Tape dimensions in mm W P P 1 P 2 D E F 12 +.3 / -.1 4 ±.1 4 ±.1 or 8 ±.1 2 ±.5 1.5 ±.1 1.75 ±.1 5.5 ±.5 Reel dimensions [mm] Reel dimensions in mm A W N min W 1 W 2max 18 12 6 12.4 + 2 18.4 Barcode-Product-Label (BPL) EX XAM AMP MPL LE OSRAM Opto Semiconductors ors (6P) BATCH ENO: 123456789 E234 (1T) LOT NO: 123456789 (9D) D/M: D/C: 1234 (X) PROD NO: 123456789(Q)QTY: AMD) AMD/ D C 9999 (G) GROUP: LX XXXX RoHS Compliant Pack: RXX DEMY BIN1: XX-XX-X-XXX-X ML Temp ST X XXX C X XXX X_X123_1234.1234 _123 234.1234 X XX-XX-X-X X-X-X OHA4563 216-9-23 9

_< C). _< _< C). 11 _< 144 Bin2: Q-1-2 Bin3: ML 2 2a 22 C R WET Please check the HIC immidiately after bag opening. Discard if circles overrun. Avoid metal contact. Do not eat. Version 1.6/ OS-IN-215-33 SFH 4258 Dry Packing Process and Materials OSRAM Moisture-sensitive label or print Barcode label Humidity indicator Barcode label Comparator check dot 5% 1% 15% If wet, parts still adequately dry. change desiccant If wet, examine units, if necessary bake units If wet, examine units, if necessary bake units 11 (9D) D/C: 144 Bin2: Q-1-2 Bin3: ML Temp ST 2 22 C R 2a CAUTION This bag contains MOISTURE SENSITIVE OPTO SEMICONDUCTORS LEVEL If blank, see bar code label 1. Shelf life in sealed bag: 24 months at < 4 C and < 9% relative humidity (RH). 2. After this bag is opened, devices that will be subjected to infrared reflow, vapor-phase reflow, or equivalent processing (peak package body temp. If blank, see bar code label a) Mounted within at factory conditions of 3 C/6% RH. Floor time see below b) Stored at 1% RH. 3. Devices require baking, before mounting, if: a) Humidity Indicator Card is > 1% when read at 23 C ± 5 C, or b) 2a or 2b is not met. 4. If baking is required, reference IPC/JEDEC J-STD-33 for bake procedure. Bag seal date (if blank, seal date is identical with date code). Date and time opened: Moisture Level 1 Floor time > 1 Year Moisture Level 4 Floor time 72 Hours Moisture Level 2 Floor time 1 Year Moisture Level 5 Floor time 48 Hours Moisture Level 2a Floor time 4 Weeks Moisture Level 5a Floor time 24 Hours Moisture Level 3 Floor time 168 Hours Moisture Level 6 Floor time 6 Hours Desiccant Humidity Indicator MIL-I-8835 OSRAM OHA539 Note: Moisture-sensitive product is packed in a dry bag containing desiccant and a humidity card. Regarding dry pack you will find further information in the internet. Here you will also find the normative references like JEDEC. Transportation Packing and Materials Barcode label Barcode label CAUTION This bag contains MOISTURE SENSITIVE OPTO SEMICONDUCTORS LEVEL If blank, see bar code label 1. Shelf life in sealed bag: 24 months at < 4 C and < 9% relative humidity (RH). 2. After this bag is opened, devices that will be subjected to infrared reflow, vapor-phase reflow, or equivalent processing (peak package body temp. If blank, see bar code label a) Mounted within at factory conditions of 3 C/6% RH. Floor time see below b) Stored at 1% RH. 3. Devices require baking, before mounting, if: a) Humidity Indicator Card is > 1% when read at 23 C ± 5 C, or b) 2a or 2b is not met. 4. If baking is required, reference IPC/JEDEC J-STD-33 for bake procedure. Bag seal date (if blank, seal date is identical with date code). Date and time opened: Moisture Level 1 Floor time > 1 Year Moisture Level 4 Floor time 72 Hours Moisture Level 2 Floor time 1 Year Moisture Level 5 Floor time 48 Hours Moisture Level 2a Floor time 4 Weeks Moisture Level 5a Floor time 24 Hours Moisture Level 3 Floor time 168 Hours Moisture Level 6 Floor time 6 Hours OSRAM Opto Semiconductors (6P) BATCH NO: 2121998 (1T) LOT NO: 123GH1234 Muster (X) PROD NO: 1 (9D) D/C: 425 (Q)QTY: 2 LSY T676 Bin1: P-1-2 Multi TOPLED Temp ST 24 C R 3 26 C RT Additional TEXT R77 DEMY PACKVAR: R18 (G) GROUP: P-1+Q-1 OSRAM Opto Semiconductors (6P) BATCH NO: 2121998 (1T) LOT NO: 123GH1234 Muster (X) PROD NO: 1 425 (Q)QTY: 2 LSY T676 Bin1: P-1-2 Multi TOPLED 24 C R 3 26 C RT Additional TEXT R77 DEMY PACKVAR: R18 (G) GROUP: P-1+Q-1 OSRAM Packing Sealing label OHA244 Dimensions of transportation box in mm Width Length Height 195 ± 5 195 ± 5 3 ± 5 216-9-23 1

Version 1.6/ OS-IN-215-33 SFH 4258 Disclaimer Language english will prevail in case of any discrepancies or deviations between the two language wordings. Attention please! The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved. Due to technical requirements components may contain dangerous substances. For information on the types in question please contact our Sales Organization. If printed or downloaded, please find the latest version in the Internet. Packing Please use the recycling operators known to you. We can also help you get in touch with your nearest sales office. By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred. Components used in life-support devices or systems must be expressly authorized for such purpose! Critical components* may only be used in life-support devices** or systems with the express written approval of OSRAM OS. *) A critical component is a component used in a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or the effectiveness of that device or system. **) Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain and sustain human life. If they fail, it is reasonable to assume that the health and the life of the user may be endangered. 216-9-23 11

Version 1.6/ OS-IN-215-33 SFH 4258 Glossary 1) Thermal resistance: junction -ambient, mounted on PC-board (FR4), padsize 16 mm 2 each 2) Thermal resistance: junction - soldering point, of the device only, mounted on an ideal heatsink (e.g. metal block) 3) Typical Values: Due to the special conditions of the manufacturing processes of LED, the typical data or calculated correlations of technical parameters can only reflect statistical figures. These do not necessarily correspond to the actual parameters of each single product, which could differ from the typical data and calculated correlations or the typical characteristic line. If requested, e.g. because of technical improvements, these typ. data will be changed without any further notice. 216-9-23 12

Version 1.6/ OS-IN-215-33 SFH 4258 Published by OSRAM Opto Semiconductors GmbH Leibnizstraße 4, D-9355 Regensburg www.osram-os.com All Rights Reserved. 216-9-23 13