RADMON Seminar IEAP-CTU CERN LHC Experiment Radiation Monitoring (RADMON) Federico Ravotti CERN TS-LEA, Geneva, Switzerland CEM 2 - University Montpellier II, Montpellier, France Maurice Glaser, Michael Moll CERN PH-DT2, Geneva, Switzerland Solid-State Radiation Sensor Working Group in the framework of the RADMON Project
Summary CERN, LHC, Experiments (Radiation Fields); Radiation Monitoring at LHC; Active RadMon Sensors ( Sensor Catalogue ): RadFETs; p-i-n diodes in forward and reverse bias; CERN packaging issues; Optically Stimulated Luminescent materials (OSLs); Application of RadMon sensors; Conclusion & Outlook. F.Ravotti RADMON Seminar IEAP-CTU, Praha - 14 July 2005 2
Large Hadron Collider Dipoles and QRL being installed in sectors 7-8 and 8-1 (June 2005) p p F.Ravotti RADMON Seminar IEAP-CTU, Praha - 14 July 2005 3
LHC Experiments F.Ravotti RADMON Seminar IEAP-CTU, Praha - 14 July 2005 4
Experiments Radiation Field CMS p p [M. Huhtinen, Montecarlo simulation for ECAL] Interaction Point (IP) Mixed radiation field; ƒ(r,θ,z) with respect to IP; Intense in some locations; F.Ravotti RADMON Seminar IEAP-CTU, Praha - 14 July 2005 5
Doses in CMS (10y) MUON (barrel) ~ 10 Gy ECAL+HCAL (Endcap) ~ 300 kgy TRACK ~ 1 MGy Cavern ~ 10 mgy MUON (Endcap) ~ 100 Gy ECAL+HCAL (Barrel) ~ 10 50 kgy [M. Huhtinen, simulation after 500 fb -1 ] F.Ravotti RADMON Seminar IEAP-CTU, Praha - 14 July 2005 6
Fluences in CMS (10y) TRACK: Φ eq = 10 15 cm -2 CAL (Endcap): Φ eq = 10 14 cm -2 CAL (Barrel): Φ eq = 10 13 cm -2 MUON (Endcap): Φ eq = 10 10 cm -2 MUON (Barrel): Φ eq = 10 9 cm -2 HF >10 15 part./cm 2, 5 MGy [M. Huhtinen, simulations @ L = 10 34 ] F.Ravotti RADMON Seminar IEAP-CTU, Praha - 14 July 2005 7
TID and Φ in ATLAS ID 0 1 r (m) C B A 0 1 2 3 4 z (m) r [cm] z [cm] Φ eq [10 14 /cm 2 ] 10 y (LL y) 20-30 (A) 40-50 (B) 80-90 (C) 80-90 340-350 340-350 2.33 (0.03) 2.35 (0.03) 1.06 (0.01) Φ >20 MeV [10 14 ] 10 y 2.2 1.25 0.41 TID [10 4 Gy] 10 y (LL y) 14 (0.20) 6.7 (0.09) 1.91 (0.03) F.Ravotti RADMON Seminar IEAP-CTU, Praha - 14 July 2005 [I. Mandic, JSI] 8
Rest of ATLAS System r (cm) z (cm) TID (Gy / 10 y) TID (Gy / LL y) NIEL (cm -2 / 10 y) NIEL (cm -2 / LL y) LAr: 290-340 300-700 5.7-50 0.08-0.7 1.5e11-1.5e12 2.1e9-2.1e10 TILE: 400-410 150-275 0.2-2.5 0.003-0.035 1.5e10-2.3e11 2.1e8-3.2e9 MuonCSC 89-205 690-750 15-520 0.21-7.28 1.0e12-5.0e12 1.4e10-7.0e10 MuonRPC 839-1050 0-1380 1.3-3.0 0.02-0.04 2.1e10-2.8e10 2.9e8-3.9e8 MuonTGC 680-1180 1280-1480 2.3-2.5 0.04 1.4e10-2.6e10 2e8-3.6e8 MuonMDT 520-950 0-1250 1.3-6.4 0.02-0.09 1.8e10-2.9e11 2.5e8-4.1e9 [I. Mandic, JSI] F.Ravotti RADMON Seminar IEAP-CTU, Praha - 14 July 2005 9
Section II CERN, LHC, Experiments (Radiation Fields); Radiation Monitoring at LHC; Active RadMon Sensors ( Sensor Catalogue ): RadFETs; p-i-n diodes in forward and reverse bias; CERN packaging issues; Optically Stimulated Luminescent materials (OSLs); Application of RadMon sensors; Conclusion & Outlook. F.Ravotti RADMON Seminar IEAP-CTU, Praha - 14 July 2005 10
Radiation Monitoring Purposes 1) RADIATION DAMAGE can be caused by: Ionizing Energy Losses (IEL) Total Ionizing Dose (TID); Non-Ionizing Energy Losses (NIEL) 1-MeV neutron eq. fluence (Φ eq ). 2) Important to monitor separately TID, Φ eq and possibly Φ n,th ; 3) The best dosimeter for electronics & detectors is based on Si or materials with similar Z; 4) Accelerator environments are ƒ(t) Active ( on-line ) monitoring; F.Ravotti RADMON Seminar IEAP-CTU, Praha - 14 July 2005 11
Radiation Monitoring Purposes 5) Monitoring is NOT ONLY for radiation damage survey: Verify Montecarlo Simulation Accuracy; Check the integrity of the shielding; Long-term monitoring in critical locations; Measurement of radiation background. Different radiation field parameters have to be monitored... different Sensitivities and Dynamic ranges required different small active devices have been investigated! F.Ravotti RADMON Seminar IEAP-CTU, Praha - 14 July 2005 12
Experiment RadMon Strategy Beam Condition Monitor (BCM): bunch by bunch monitoring with Diamond, fast losses from the LHC (t ~ 25 ns) ATLAS BCM (4 stations) [A. Gorišek, JSI] Sets of SOLID-STATE ACTIVE and PASSIVE dosimeters for proper Monitoring (t ~ hours, days, weeks,..) CMS BCM (3 locations) [A. Macpherson, Rutgers] F.Ravotti RADMON Seminar IEAP-CTU, Praha - 14 July 2005 13
Experiment RadMon Strategy Beam Condition Monitors RADMON Passive Dosimeters Solid-State Active dosimeters Our Mandate is to Develop, Characterize, Qualify, Select and finally Procure active radiation sensors suitable for dosimetry in the mixed fields of the LHC Experiments. We also Advice the Experiments during sensors integration. F.Ravotti RADMON Seminar IEAP-CTU, Praha - 14 July 2005 14
Section III CERN, LHC, Experiments (Radiation Fields); Radiation Monitoring at LHC; Active RadMon Sensors ( Sensor Catalogue ): RadFETs; p-i-n diodes in forward and reverse bias; CERN packaging issues; Optically Stimulated Luminescent materials (OSLs); Application of RadMon sensors; Conclusion & Outlook. F.Ravotti RADMON Seminar IEAP-CTU, Praha - 14 July 2005 15
Active RadMon Sensors RadFETs Build-up of charge in MOSFETs SiO 2 layer (TID) (integrating measurement) p-i-n diodes Optically Stimulated Luminescence (OSL) Bulk damage in high ρ Si-base (Φ eq ) (integrating measurement) Charge build-up in sensitive material detrapped by IR stimulation (TID) (instantaneous measurement) 3 cm x 1.5 cm F.Ravotti RADMON Seminar IEAP-CTU, Praha - 14 July 2005 16
Sensor Catalogue 5 Sensors for measuring TID (Gy) and 1-MeV equivalent particle fluence Φ eq (cm -2 ) For each listed sensor: 1. Physical / geometrical data (connectivity); 2. Readout details (schematic examples); Contains sensors fully qualified and ready to be used at LHC! 3. Pre- and after- irradiation characteristics; 4. Radiation responses; 5. Handling and operation precautions (temperature, magnetic field) 6. Packaging options and commercial details. F.Ravotti RADMON Seminar IEAP-CTU, Praha - 14 July 2005 17
Sensor Catalogue http://lhc-expt-radmon.web.cern.ch/lhc-expt-radmon/ Index of available sensors Catalogue Updates: Last release TS-Note-2005-002 13 May 2005 EDMS No. 590497 F.Ravotti RADMON Seminar IEAP-CTU, Praha - 14 July 2005 18
RadFET Sensors (TID) (1) e - /h + pair generation; (2) e - /h + pair recombination; (3) e - / h + transport; (4) hole trapping; (5) Interface states buildup. i D (100 μa) V GS Si SiO 2 Exposure: zero bias Readout: i DS at MTC V GS TID F.Ravotti RADMON Seminar IEAP-CTU, Praha - 14 July 2005 19
RadFETs Qualification Isochronal Annealing: Accelerated procedure based on the scaling annealing t annealing T Response to single radiation fields and measurement of key parameters [T C, drift,..] SiO 2 quality evaluation (Isochronal & RT Annealing) Response at Low Dose- Rate in Mixed Environment Packaging Influence Response to some particle fields of interest for the LHC and at high doses were missing in literature! TWO types recommended for CERN purposes! F.Ravotti RADMON Seminar IEAP-CTU, Praha - 14 July 2005 20
RadFET Ionizing-Radiation responses Thin Oxide RadFET (0.8 μm) Thick Oxide RadFET (1.6 μm) Recombination effects due to high-let radiations F.Ravotti RADMON Seminar IEAP-CTU, Praha - 14 July 2005 21
RadFET Fast Neutrons response total n Φ early saturation, NO! Different suppliers, t ox reduced sensitivity, OK! 20-MeV n at UCL, BE F.Ravotti RADMON Seminar IEAP-CTU, Praha - 14 July 2005 22
RadFET Isochronal Annealing 1. LAAS 1600 2. T&N 250 3. NMRC 400 4. NMRC 400 F.Ravotti RADMON Seminar IEAP-CTU, Praha - 14 July 2005 23
RadFET RT annealing Irradiation End REM 250: RT Annealing < 1% Temperature Variation NMRC 400: RT Annealing > 25 % PS-T7 IRRAD1b at CERN F.Ravotti RADMON Seminar IEAP-CTU, Praha - 14 July 2005 24
RadFET surrounding Materials effect 20-MeV n at UCL, BE enhanced sensibility (F up to 7!) to fast-neutron by means of PE slabs Bare devices total n Φ F.Ravotti RADMON Seminar IEAP-CTU, Praha - 14 July 2005 25
RadFET in Catalogue 9 products from 4 suppliers were evaluated to suit Experiment requirements: Thin-Oxide RadFET dies (0.25 μm and 0.13 μm [ATLAS]): ~ 20 mv/gy 0.1 to some tens kgy; Minimize SiO 2 recombination effects mixed-let particle fields; Suited for dosimetry in inner-detector regions. Thick-Oxide RadFET dies (1.6 μm): ~ 500 mv/gy ~ 1 mgy to tens Gy; Measurement in conventional (γ + n) radiation fields. Suited for dosimetry in outer-detector regions; For both types the packaging remains the last issue! F.Ravotti RADMON Seminar IEAP-CTU, Praha - 14 July 2005 26
RadFET performances 24 GeV/c protons 90 cm γ (>100 kev): 16 560 mgy/h & n (<50 kev): 3.2 10 10 cm -2 h -1 HEP (>100 MeV): 3.1 10 7 cm -2 h -1 Thin-Oxide RadFET MONITORING OF THE PRIMARY AREA at CERN PS-T7 (2004) Reference measurements with Alanine F.Ravotti RADMON Seminar IEAP-CTU, Praha - 14 July 2005 27
p-i-n Sensors (cm -2 ) Displacement damage in high ρ Si-base Macroscopic effect linear with Φ eq FORWARD BIAS Fixed i F V F Φ eq i F V F V F = ƒ (material param. [τ,ρ,l], geometry [W], readout current density [J]) Main readout constraint: current induced Ω heating irradiation defects annealing Typical readout technique: 1 ma with some hundred ms pulse length. CUSTOM MADE COMMERCIAL DEVICES F.Ravotti RADMON Seminar IEAP-CTU, Praha - 14 July 2005 28
Catalogue p-i-n diodes V F = ƒ (material, geometry, readout current density, pulse length) CUSTOM MADE Optimization COMMERCIAL DEVICES High-Sensitivity Si-diode from CMRP: ~ 2 10 8 cm -2 / mv for Φ eq < 2 10 12 cm -2 Small packaging ( 3 3 mm); BPW 34F Si-diode from OSRAM: ~ 8 10 9 cm -2 / mv for Φ eq > 2 10 12 cm -2 (same readout) Readout protocol under optimization; pre-irradiation seems a solution to go for lower fluences! F.Ravotti RADMON Seminar IEAP-CTU, Praha - 14 July 2005 29
p-i-n diodes performances CUSTOM-MADE DEVICES Low Flux irradiation in PS-T7 (Max Φ eq = 2x10 12 ) BPW34F RESPONSE IN DIFFERENT HADRON FIELDS (Φ eq = 2x10 12 4x10 14 ) PERFORM PRE-IRRADIATION ON BPW34F Low Flux irradiation in PS-T7 F.Ravotti RADMON Seminar IEAP-CTU, Praha - 14 July 2005 30
p-i-n (PAD) Sensors (cm -2 ) REVERSE BIAS Fixed V R ( 50V) I L Φ eq i L V R 1. Very wide fluence range; 2. Very precise if used as passive ST Microelectronic PAD detectors 0.25 μm (Off-line) dosimeters; 3. Complex annealing behaviour if used as active dosimeters; F.Ravotti RADMON Seminar IEAP-CTU, Praha - 14 July 2005 31
Packaging Development by External Company Commercial Packaging (i.e. TO-5, DIP) cannot satisfy all Experiment Requirements (dimensions/materials) Development / study in-house at CERN High Integration level: up to 10 FETs; Customizable Internal layout; Standard External Connectivity; X 0 = 10.3 mm; e - cut-off 550 KeV p cut-off 10 MeV γ transmission 20 KeV n attenuation 2-3 % Actually specified for RadFETs only but it will integrate also forward p-i-n diodes! ~ 10 mm 2 36-pin Al 2 O 3 chip carrier + 0.4 mm Al 2 O 3 cover F.Ravotti RADMON Seminar IEAP-CTU, Praha - 14 July 2005 32
F.Ravotti RADMON Seminar IEAP-CTU, Praha - 14 July 2005 33
OSLs General (1) e - /h + pair generation and trapping; (collaboration with CEM 2 Montpellier University) (2) Infrared stimulation (800-1500 nm); (3) Visible emission (500-700 nm). SrS:Ce,Sm OSL IR stimulation Peak Amplitude increases linearly with TID [L. Dusseau, CEM 2 ] Photosensor sec The readout completely reset the sensitive material! F.Ravotti RADMON Seminar IEAP-CTU, Praha - 14 July 2005 34
OSL: CERN/CEM 2 R&D OSL Materials 1) Research on Materials: Test bench Qualification in HEP fields (100μ 100 Gy); See for example IEEE TNS 51(6), 2004, pp. 3642 Development of neutron-sensitive materials. 2) Development of Active system based on OSL: Rad-Hard integrated sensor; Fibred-OSL system. 3 cm x 1.5 cm 1 st version tested in 2003, 2 nd version ready for CERN validation (Radiation Hardness); F.Ravotti RADMON Seminar IEAP-CTU, Praha - 14 July 2005 35
Neutron-sensitive OSLs FACILITIES NEUTRON SPECTRA OSL+B OSL+PE IRRAD2 Facility TRIGA Reactor First measurements match very well the facility spectra F.Ravotti RADMON Seminar IEAP-CTU, Praha - 14 July 2005 36
Integrated OSL Sensor Very good linearity High Dynamic Range Sensitivity 0.3 mgy over 20 m. Feedback loop (1, 2, 3 & 4) built around a current source (2) radiation hardness. 60 Co Reading disable switch to avoid accidental reading (SET ) of the sensor (9). Differential output (7 & 8) Standard measurement cell (5) with OSL layer (6) [J-R Vaillé, CEM 2 ] F.Ravotti RADMON Seminar IEAP-CTU, Praha - 14 July 2005 37
OSLs: Current R&D Conceptual Design of an Fibered OSL dosimeter system Coupling optical fibers and back-end electronics Splitter to allow readout using 1 front-end fiber Sensitive Head Design (based on Polymicro fiber used for CMS HF) [A. Fernandez-Fernandez, SCK-CEN] F.Ravotti RADMON Seminar IEAP-CTU, Praha - 14 July 2005 38
Section IV CERN, LHC, Experiments (Radiation Fields); Radiation Monitoring at LHC; Active RadMon Sensors ( Sensor Catalogue ): RadFETs; p-i-n diodes in forward and reverse bias; CERN packaging issues; Optically Stimulated Luminescent materials (OSLs); Application of RadMon sensors; Conclusion & Outlook. F.Ravotti RADMON Seminar IEAP-CTU, Praha - 14 July 2005 39
Sensor Requirements Status Thin Oxide FETs Thick Oxide FETs High Sensitivity p-i-n BPW 34 p-i-n Si- Detector p-i-n ALICE March 2005 10 20 30 0 0 ATLAS June 2005 36 [ID] ~ 30 [RoA] 36 [ID] ~ 30 [RoA] 20 [ID] 0 CMS March 2005 a few? a few? a few? / / LHCb March 2005 30 30 50 30 0 TOTEM April 2005 A contact-person has been appointed [ID] = Inner Detector; [RoA] = Rest of Atlas F.Ravotti RADMON Seminar IEAP-CTU, Praha - 14 July 2005 40
ATLAS RadMon PC-PVSSII USA15 DAC power supply ELMB (ADC) PP2 CAN BUS 4 ELMBs connected to one CAN branch PP2 board DAC to enforce I (V) Radiation Monitor Sensor Board RMSB Schematic view of the ID monitor [I. Mandic, JSI] Type II cable ~ 12 m FCI connector PP1 board twisted pairs ~ 1 m F.Ravotti RADMON Seminar IEAP-CTU, Praha - 14 July 2005 41
ATLAS RMSB 4 x RADFETs (.. + High Sens. Pin +..) 2 x RADFETs DMILL structure (n th damage) BPW34 diodes PAD diode PCB with T control PEEK plastic housing For the Rest of Atlas [RoA] hybrid will be less populated. PT1000 [I. Mandic, JSI] Prototype ceramic hybrid populated F.Ravotti RADMON Seminar IEAP-CTU, Praha - 14 July 2005 42
Section V CERN, LHC, Experiments (Radiation Fields); Radiation Monitoring at LHC; Active RadMon Sensors ( Sensor Catalogue ): RadFETs; p-i-n diodes in forward and reverse bias; CERN packaging issues; Optically Stimulated Luminescent materials (OSLs); Application of RadMon sensors; Conclusion & Outlook. F.Ravotti RADMON Seminar IEAP-CTU, Praha - 14 July 2005 43
Conclusion & Outlook 1 We characterized several devices in the past (mainly RadFETs and p-i-n diodes) that now are available for the dosimetry at the LHC Experiments ( Sensor Catalogue ); After the RADMON meeting of March 22 nd we start the procurement and we are setting up selection and QA procedures for some of the procured sensors; We studied a dedicated sensor carrier optimized for LHC. A first prototype is in preparation. Its final validation will be during the calibration phase. F.Ravotti RADMON Seminar IEAP-CTU, Praha - 14 July 2005 44
Conclusion & Outlook 2 Nowadays our main development is on OSL materials. The second version of integrated sensor will be tested in CERN-like environments, a new series of neutron-sensitive materials is under test and a first CERN prototype of a fibred system is going to be prepared. The Solid-State Radiation Sensor Working Group is developing, characterizing and looking for new devices with the aim to include them in further releases of the Sensor Catalogue. In particular sensors dedicate to the measurements of thermal neutron are of strong interest (scope of our visit here!). F.Ravotti RADMON Seminar IEAP-CTU, Praha - 14 July 2005 45
www.cern.ch\lhc-expt-radmon F.Ravotti RADMON Seminar IEAP-CTU, Praha - 14 July 2005 46