NPN GENERAL PURPOSE SWITHING TRANSISTOR OLTAGE 4 olt POWER 225 mwatt FEATURES NPN epitaxial silicon, planar design ollectoremitter voltage E = 4 ollector current I = 6mA Lead free in compliance with EU RoHS 211/65/EU directive Green molding compound as per IE61249 Std.. (Halogen Free) MEHANIAL DATA ase: SOT523, Plastic Terminals: Solderable per MILSTD75, Method 226 Approx. Weight:.7 ounces,.2 grams Marking: MY ABSOLUTE RATINGS PARAMETER Symbol alue Units ollector Emitter oltage EO 4 ollector Base oltage BO 75 Emitter Base oltage EBO 6. ollector urrent ontinuous I 6 ma THERMAL HARATERISTIS PARAMETER Symbol alue Units Max Power Dissipation (Note 1) PTOT 225 mw O Thermal Resistance, Junction to Ambient RθJA 833 / W Op e ra ti ng Juncti o n a nd S to ra g e Te mp e ra ture Ra ng e, STG 5 5 to +1 5 O TJ T Note 1 : Transistor mounted on FR5 board 1 x.75 x.62 in. May 4,216RE.3 PAGE. 1
ELETRIAL HARATERISTIS PA RA ME TE R Symb o l T e st o nd i ti o n M IN. T YP. MA X. Uni ts o lle cto r E mi tte r B re a kdown o lta g e (BR) E O I = 1. ma, IB= 4 o lle cto r B a se B re a kdown o lta g e (BR) B O I = 1 ua, IE= 75 Emi tte r B a se B re a kdown o lta g e (BR) EB O IE= 1 ua, I = 6. Ba se uto ff urre nt IBL E= 6, E B= 3. 2 na o lle cto r uto ff urre nt IEX E IBO = 6, E B= 3. 1 na E= 6, IE =, E= 6, IE=, TJ= 1 2 5 O 1 1 na ua Emi tte r uto ff urre nt IEBO E B= 3., I =, 1 na D urre nt Ga i n h F E I =.1 ma, E=1 I = 1. ma, E=1 I = 1 ma, E=1 I = 1 ma, E= 1, TJ= 1 2 5 O I = 1 5 ma, E=1 (No te 2 ) I = 1 5 ma, E=1 (No te 2 ) I = 5 ma, E=1 (No te 2 ) 3 5 5 7 5 3 5 1 5 4 3 o lle cto r (No te 2 ) E mi tte r S a tura ti o n o lta g e E(SAT) I = 1 5 ma, IB=1 5 ma I = 5 ma, IB=5 ma.3 1. B a se (No te E mi tte r S a tura ti o n 2 ) o lta g e BE(SAT) I = 1 5 ma, IB=1 5 ma I = 5 ma, IB=5 ma.6 1.2 2. o lle cto r B a se a p a ci ta nce BO B= 1, IE=, f=1 MHz 8. p F Emi tte r B a se a p a ci ta nce EBO B=.5, I =, f=1 MHz 25 p F De la y Ti me td = 3, B E=5, I = 1 5 ma, IB=1 5 ma 1 ns Ri se Ti me tr = 3, B E=5, I = 1 5 ma, IB=1 5 ma 25 ns Sto ra g e Ti me ts = 3, I =1 5 ma IB1 = IB2 =1 5 ma 22 5 ns Fa ll Ti me tf = 3, I =1 5 ma IB1 = IB2 =1 5 ma 6 ns Note 2: Pulse Test: Pulse Width < 3 us, Duty ycle < 2.%. SWITHING TIME EQUIALENT TEST IRUITS +3 +3 +16 1.to1us Duty ycle ~ 2.% 2 +16 1. to 1us Duty ycle ~ 2.% 2 2 < 2ns 1K * < 1pF S Scope rise time < 4ns 14 < 2ns 1K 1N914 4 * Total shunt capacitance of test jig, connectors, and oscilloscope S * < 1pF Fig. 1 TurnOn Time Fig. 2 TurnOff Time May 4,216RE.3 PAGE. 2
E(SAT), ollectoremitter oltage () 4 3.5 3 2.5 I = 3mA 2 I = 3mA 1.5 I = 1mA 1 I = 1mA I = 1mA.5.1.1.1 1 1 1 I B, Base urrent (ma) May 4,216 RE.3 PAGE. 3
MOUNTING PAD LAYOUT ORDER INFORMATION Packing information T/R 4K per 7" plastic Reel May 4,216RE.3 PAGE. 4
Part No_packing code_ersion MMBT2222ATB_R1_1 For example : RB54_R2_1 Part No. Serial number ersion code means HF Packing size code means 13" Packing type means T/R Packing ode XX ersion ode XXXXX Packing type 1 st ode Packing size code 2 nd ode HF or RoHS 1 st ode 2 nd ~5 th ode Tape and Ammunition Box (T/B) Tape and Reel (T/R) Bulk Packing (B/P) Tube Packing (T/P) Tape and Reel (Right Oriented) (TRR) Tape and Reel (Left Oriented) (TRL) FORMING A N/A HF serial number R 7" 1 RoHS 1 serial number B 13" 2 T 26mm X S 52mm Y L F PANASERT T/B ATHODE UP (PBU) PANASERT T/B ATHODE DOWN (PBD) U D May 4,216RE.3 PAGE. 5
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