Optocoupler with Phototransistor Output Description The 4N25/ 4N26/ 4N27/ 4N28 consist of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 6-lead plastic dual-inline package. The elements are mounted on one leadframe using a coplanar technique, providing a fixed distance between input and output for highest safety requirements. 4N25/ 4N26/ 4N27/ 4N28 Applications 95 1532 Galvanically separated circuits for general purposes Features B C E 6 5 4 Isolation test voltage (RMS) 3.75 kv Underwriters Laboratory (UL) 1577 recognized, file number E-76222 Low coupling capacity of typical 1 pf Current Transfer Ratio (CTR) of typical 1% Low temperature coefficient of CTR 1 2 3 A (+) C ( ) n.c. 95 185 Order Instruction Ordering Code CTR Ranking Remarks 4N25/ 4N26 >2% 4N27/ 4N28 >1% Rev. A4, 11 Jan 99 79
Absolute Maximum Ratings Input (Emitter) Parameter Test Conditions Symbol Value Unit Reverse voltage V R 5 V Forward current 6 ma Forward surge current t p 1 s SM 3 A Power dissipation T amb 25C P V 1 mw Junction temperature T j 125 C Output (Detector) Parameter Test Conditions Symbol Value Unit Collector base voltage V CBO 7 V Collector emitter voltage V CEO 3 V Emitter collector voltage V ECO 7 V Collector current I C 5 ma Peak collector current t p /T =.5, t p 1 ms I CM 1 ma Power dissipation T amb 25C P V 15 mw Junction temperature T j 125 C Coupler Parameter Test Conditions Symbol Value Unit Isolation test voltage (RMS) V 1) IO 3.75 kv Total power dissipation T amb 25C P tot 25 mw Ambient temperature range T amb 55 to +1 C Storage temperature range T stg 55 to +125 C Soldering temperature 2 mm from case, t 1 s T sd 26 C 1) Related to standard climate 23/5 DIN 514 8 Rev. A4, 11 Jan 99
Electrical Characteristics (T amb = 25 C) Input (Emitter) Parameter Test Conditions Symbol Min. Typ. Max. Unit Forward voltage = 5 ma V F 1.25 1.5 V Junction capacitance V R =, f = 1 MHz C j 5 pf Output (Detector) Parameter Test Conditions Symbol Min. Typ. Max. Unit Collector base voltage I C = 1 A V CBO 7 V Collector emitter voltage I E = 1 ma V CEO 3 V Emitter collector voltage I E = 1 A V ECO 7 V Collector dark current V CB = 1 V I CBO.1 2 na Collector dark current V CE = 1 V I CEO 3.5 5 na Coupler Parameter Test Conditions Symbol Min. Typ. Max. Unit Isolation test voltage f = 5 Hz, t = 2 s V 1) IO 3.75 kv (RMS) Isolation resistance V IO = 1 kv, R 1) IO 1 12 4% relative humidity Collector emitter = 5 ma, I C = 2 ma V CEsat.5 V saturation voltage Cut-off frequency V CE = 5 V, = 1 ma, f c 11 khz R L = 1 Coupling capacitance f = 1 MHz C k 1 pf 1) Related to standard climate 23/5 DIN 514 Current Transfer Ratio (CTR) Parameter Test Conditions Type Symbol Min. Typ. Max. Unit I C/IF V CE = 1 V, IF = 1 ma 4N25, 4N26 CTR.2 1 4N27, 4N28 CTR.1 1 Rev. A4, 11 Jan 99 81
Switching Characteristics Parameter Test Conditions Symbol Typ. Unit Turn-on time V CE = 1 V, IC = 1 ma, R L = 1 (see figure 1) t on 4. s Turn-off time t off 3. s Turn-on time V CE = 5 V, = 1 ma, RL = 1 k (see figure 2) t on 9. s Turn-off time t off 18. s R G = 5 t p T.1 + 1 V I C = 1 ma ; Adjusted through input amplitude t p 96 11698 t t p = 5 s 5 1 Channel I Channel II Oscilloscope R L 1 M C L 2 pf I C 1% 9% 95 1793 Figure 1. Test circuit, non-saturated operation 1% t r t t d t s t f t on t off R G = 5 t p T.1 = 1 ma + 5 V I C pulse dura- delay time rise time turn-on time t p tion t d t r t on (= t d + t r ) t s t f t off (= t s + t f ) storage time fall time turn-off time t p = 5 s Figure 3. Switching times Channel I Oscilloscope 95 1844 5 1 k Channel II R L 1 M C L 2 pf Figure 2. Test circuit, saturated operation 82 Rev. A4, 11 Jan 99
Typical Characteristics (T amb = 25 C, unless otherwise specified) P tot Total Power Dissipation ( mw ) 3 25 2 15 1 5 Coupled device Phototransistor IR-diode 4 8 12 96 117 T amb Ambient Temperature ( C ) Figure 4. Total Power Dissipation vs. Ambient Temperature 1. 1. 96 11862 CTR rel Relative Current Transfer Ratio 1. 1..1.2.4.6.8 1. 1.2 1.4 1.6 1.8 2. V F Forward Voltage ( V ) Figure 5. Forward Current vs. Forward Voltage 1.5 1.4 1.3 1.2 1.1 1..9.8.7.6 V CE =1V =1mA.5 3 2 1 1 2 3 4 5 6 7 8 96 11874 T amb Ambient Temperature ( C ) Figure 6. Relative Current Transfer Ratio vs. Ambient Temperature I CEO Collector Dark Current, with open Base ( na ) 1 96 11875 I CB Collector Base Current ( ma ) 96 11876 1 1 1 1..1.1 V CE =1V = 1 1 2 3 4 5 6 7 8 9 1 T amb Ambient Temperature ( C ) Figure 7. Collector Dark Current vs. Ambient Temperature V CB =1V.1 1 1 1 Figure 8. Collector Base Current vs. Forward Current 96 1194 1. 1. 1..1 V CE =1V.1.1 1. 1. 1. Figure 9. Collector Current vs. Forward Current Rev. A4, 11 Jan 99 83
1. 1 1. 1. =5mA 2mA 1mA 5mA 2mA 1mA CTR Current Transfer Ratio ( % ) 1 1 V CE =2V.1.1 1. 1. 1. 96 1195 V CE Collector Emitter Voltage ( V ) Figure 1. Collector Current vs. Collector Emitter Voltage V CEsat Collector Emitter Saturation Voltage ( V ) 95 1972 1..8.6.4.2 CTR=5% 1 1 1% 2% 1 Figure 11. Collector Emitter Saturation Voltage vs. Collector Current 95 1976 1.1 1 1 1 Figure 13. Current Transfer Ratio vs. Forward Current t on / t off Turn on / Turn off Time ( s ) 95 1974 5 4 3 2 1 Saturated Operation V S =5V R L =1k 5 1 15 Figure 14. Turn on / off Time vs. Forward Current t off t on 2 h FE DC Current Gain 95 1973 1 8 6 4 2 V CE =1V 5V.1.1 1 1 1 t on / t off Turn on / Turn off Time ( s ) 2 15 1 5 t on t off Non Saturated Operation V S =1V R L =1 2 4 6 8 95 1975 1 Figure 12. DC Current Gain vs. Collector Current Figure 15. Turn on / off Time vs. Collector Current 84 Rev. A4, 11 Jan 99
Type Date Code (YM) XXXXXX 918 A TK 63 884 V D E Production Location Safety Logo Coupling System Indicator 159 Company Logo Figure 16. Marking example Dimensions in mm weight:.5 g creepage distance: air path: 6 mm 6 mm after mounting on PC board 1477 Rev. A4, 11 Jan 99 85