215-12-14 Infrared-Emitter (85 nm) and Si-Phototransistor Version 1.3 SFH 725 Features: Available on tape and reel SMT package with IR emitter (85 nm) and Si-phototransistor Suitable for SMT assembly Emitter and detector can be controlled separately Applications Data transmission Lock bar Infrared interface Ordering Information Type: Package: Ordering Code SFH 725 SMT Multi TOPLED Q65111A3188 215-12-14 1
Version 1.3 SFH 725 Maximum Ratings Parameter Symbol Values Unit Operating and storage temperature range T op ; T stg -4... C Junction temperature T j C Electrostatic discharge (acc. to ANSI/ ESDA/ JEDEC JS-1 - HBM) V ESD 2 V Emitter 1 Forward current I F 7 ma Surge current (t p µs, D = ) I FSM.7 A Reverse voltage V R 5 V Power consumption P tot 14 mw Thermal resistance junction - ambient 1) page 15 R thja 5 K / W Thermal resistance junction - solder point R thjs 4 K / W Phototransistor Collector current I C 15 ma Surge current (t p µs, D = ) I FSM.75 A Collector-emitter voltage V CE 35 V Total Power dissipation P tot 165 mw Thermal resistance 1) page 15 R thja 45 K / W The stated maximum ratings refer to one chip. Characteristics Parameter Symbol Values Unit Emitter 1 (T A = 25 C) Peak wavelength (I F = 7 ma, t p = 2 ms) Centroid wavelength (I F = 7 ma, t p = 2 ms) Spectral bandwidth at 5% of I max (I F = 7 ma, t p = 2 ms) (typ) λ peak 86 nm (typ) λ centroid 85 nm (typ) λ 3 nm Half angle (typ) ϕ ± 6 215-12-14 2
Version 1.3 SFH 725 Parameter Symbol Values Unit Dimensions of active chip area (typ) L x W.2 x.2 mm x mm Rise and fall time of I e ( % and 9% of I e max ) (I F = 7 ma, R L = 5 Ω) Forward voltage (I F = 7 ma, t p = 2 ms) Forward voltage (I F = 5 ma, t p = µs) Reverse current (V R = 5 V) Total radiant flux (I F = 7 ma, t p = 2 ms) Min Radiant Intensity (I F = 7 ma, t p = 2 ms) Radiant intensity (I F = 7 ma, t p = 2 ms) Typ Radiant Intensity (I F = 5 ma, t p = µs) Temperature coefficient of I e or Φ e (I F = 7 ma, t p = 2 ms) Temperature coefficient of V F (I F = 7 ma, t p = 2 ms) Temperature coefficient of wavelength (I F = 7 ma, t p = 2 ms) (typ) t r, t f 12 ns (typ (max)) V F 1.6 ( 2) V (typ (max)) V F 2.4 ( 3) V (typ (max)) I R not designed for reverse operation µa (typ) Φ e 4 mw I e, min 6.3 mw / sr I e, typ mw/sr I e, typ 6 mw / sr (typ) TC I -.5 % / K (typ) TC V -.7 mv / K (typ) TC λ.3 nm / K Phototransistor (T A = 25 C, λ = 88 nm) Wavelength of max. sensitivity (typ) λ S max 99 nm Spectral range of sensitivity (S = % of S max ) Radiant sensitive area ( = 24 µm) (typ) λ 44... 115 nm (typ) A.38 mm 2 Dimensions of chip area (typ) L x W (typ).45 x.45 Distance chip front to case surface (typ) H (typ).5....7 Half angle (typ) ϕ ± 6 Capacitance (V CE = V, f = 1 MHz, E = ) mm x mm mm (typ) C CE 5 pf 215-12-14 3
Version 1.3 SFH 725 Parameter Symbol Values Unit Dark current (V CE = 25 V, E = ) Photocurrent (λ = 88 nm, E e =.1 mw/cm 2, V CE = 5 V) Rise and fall time (I C = 1 ma, V CC = 5 V, R L = 1 kω) Collector-emitter saturation voltage (I C = 5 µa, E e =.1 mw/cm 2 ) Grouping (T A = 25 C) (typ (max)) I CE 1 ( 2) na I PCE 16 µa (typ) t r, t f 7 µs (typ) V CEsat 15 mv Group Min Radiant Intensity Max Radiant Intensity Typ Radiant Intensity I F = 7 ma, t p = 2 ms I F = 7 ma, t p = 2 ms I F = 5 ma, t p = µs I e, min I e, max I e, typ SFH 725-Q 6.3 12.5 55 SFH 725-R 2 9 Note: Measured at a solid angle of Ω =.1 sr. Relative Spectral Emission (typ) I rel = f(λ), T A = 25 C I rel % 8 6 4 OHF4132 Radiant Intensity I e / I e (7 ma) = f(i F ), single pulse, t p = 25 µs I e 1 Ie (7 ma) 5 5-1 OHF446 2-2 5 7 75 8 85 nm λ 95-3 5 1 5 2 ma 3 I F 215-12-14 4
Version 1.3 SFH 725 Max. Permissible Forward Current I F, max = f(t A ) 8 ma I F 7 6 5 4 3 2 OHF3732 Forward Current I F = f(v F ), T A = 25 C I F A -1 5-2 5 5-3 OHF3826 2 4 6 8 C 12 T Permissible Pulse Handling Capability I F = f(t p ), T A = 25 C, duty cycle D = parameter IF.7 A.6.5.4.3.2.1 t P D= T t P T D=.5.1.2.5.1.2.3.5 1 A OHF3733 I F -4.5 1 1.5 2 2.5 V 3 Relative Spectral Sensitivity S rel = f(λ), T A = 25 C S rel % 8 7 6 5 4 3 2 V F OHF27-5 -4-3 -2-1 1 2 s t p 4 5 6 7 8 9 nm 1 λ 215-12-14 5
Version 1.3 SFH 725 Photocurrent I PCE = f(e e ), V CE = 5 V, T A = 25 C Ι PCE 3 µa 2 OHF312 Photocurrent I PCE = f(v CE ), E e = Parameter, T A = 25 C Ι PCE ma.25 mw 1 cm 2.5 mw cm 2 mw cm 2 OHF1529 1-1 mw.1 cm 2-1 -3-2 m W/cm 2 E e 5 15 2 25 3 V 35 V Photocurrent Dark Current I PCE / I PCE (25 C) = f(t A ), V CE = 5 V I CEO = f(v CE ), E =, T A = 25 C Ι PCE Ι PCE25 1.6 1.4 OHF1524 Ι -2 1 na CEO CE OHF1527 1.2 1..8-1.6.4-2.2-25 25 5 75 C T A -3 5 15 2 25 3 V 35 V CE 215-12-14 6
Version 1.3 SFH 725 Dark Current I CEO = f(t A ), V CE = 5 V, E = 3 Ι CEO na 2 1 OHF153 Collector-Emitter Capacitance C CE = f(v CE ), f = 1 MHz, E =, T A = 25 C C CE 5. pf 4. 3.5 3. 2.5 2. 1.5 1..5 OHF1528-1 -25 Power Consumption P tot = f(t A ) P tot 2 mw 16 25 5 75 C T A OHF871-2 -1 1 V 2 V CE 12 8 4 2 4 6 8 C T A 215-12-14 7
Version 1.3 SFH 725 Emitter Radiation Characteristics / Phototransistor Directional Characteristics I rel = f(ϕ) / S rel = f(ϕ) 4 3 2 OHL166 ϕ 1. 5.8 6 7 8 9.6.4.2 1..8.6.4 2 4 6 8 12 Package Outline Dimensions in mm (inch). 215-12-14 8
Version 1.3 SFH 725 Pinning Pin Description 1 Anode Emitter 1 2 Cathode Emitter 1 3 Collector Phototransistor 4 Emitter Phototransistor Package Multi TOPLED Approximate Weight: 34. mg Recommended Solder Pad Dimensions in mm (inch). 215-12-14 9
Version 1.3 SFH 725 Reflow Soldering Profile Product complies to MSL Level 2 acc. to JEDEC J-STD-2D.1 3 C T 25 2 24 C 217 C t P t L T p OHA4525 245 C 15 t S 5 25 C 5 15 2 25 s 3 t Profile Feature Profil-Charakteristik Ramp-up rate to preheat* ) 25 C to 15 C Time t S T Smin to T Smax Ramp-up rate to peak* ) T Smax to T P Liquidus temperature Time above liquidus temperature Symbol Symbol t S T L t L Minimum 6 Pb-Free (SnAgCu) Assembly Recommendation 2 3 K/s 12 2 3 217 Maximum 8 OHA4612 Unit Einheit s K/s C s Peak temperature Time within 5 C of the specified peak temperature T P - 5 K Ramp-down rate* T P to C Time 25 C to T P T P t P 245 26 2 3 All temperatures refer to the center of the package, measured on the top of the component * slope calculation DT/Dt: Dt max. 5 s; fulfillment for the whole T-range 3 6 48 C s K/s s 215-12-14
Version 1.3 SFH 725 Taping 1.5 (.59) 4 (.157) 2 (.79) Cathode/Collector Marking 2.9 (.114) 4 (.157) 3.6 (.142) 3.5 (.138) 1.75 (.69) 8 (.315) OHAY536 Dimensions in mm (inch). Tape and Reel 8 mm tape with 2 pcs. on 18 mm reel, 8 pcs. on 33 mm reel W 1 D P P 2 F E W A N 13. ±.25 P 1 Label Direction of unreeling W 2 Direction of unreeling Leader: min. 4 mm * Trailer: min. 16 mm * *) Dimensions acc. to IEC 6286-3; EIA 481-D OHAY324 215-12-14 11
_< C). _< WET Please check the HIC immidiately after bag opening. Discard if circles overrun. Avoid metal contact. Do not eat. Version 1.3 SFH 725 Tape dimensions [mm] Tape dimensions in mm W P P 1 P 2 D E F 8 +.3 / -.1 4 ±.1 2 ±.5 or 4 ±.1 2 ±.5 1.5 ±.1 1.75 ±.1 3.5 ±.5 Reel dimensions [mm] Reel dimensions in mm A W N min W 1 W 2max 18 8 6 8.4 + 2 14.4 Reel dimensions in mm A W N min W 1 W 2max 33 8 6 8.4 + 2 14.4 Barcode-Product-Label (BPL) EX XAM AMP MPL LE OSRAM Opto Semiconductors ors (6P) BATCH ENO: 123456789 E234 (1T) LOT NO: 123456789 (9D) D/M: D/C: 1234 (X) PROD NO:123456789 AMD) AMD/ D (Q)QTY: 9999 (G) GROUP: LX XXXX RoHS Compliant Pack: RXX DEMY BIN1: XX-XX-X-XXX-X ML Temp ST X XXX C X XXX X_X123_1234.1234 _123 234.1234 X XX-XX-X-X X-X-X OHA4563 Dry Packing Process and Materials OSRAM Moisture-sensitive label or print Barcode label Humidity indicator Barcode label Comparator check dot 5% % 15% If wet, parts still adequately dry. change desiccant If wet, examine units, if necessary bake units If wet, examine units, if necessary bake units CAUTION This bag contains MOISTURE SENSITIVE OPTO SEMICONDUCTORS LEVEL If blank, see bar code label 1. Shelf life in sealed bag: 24 months at < 4 C and < 9% relative humidity (RH). 2. After this bag is opened, devices that will be subjected to infrared reflow, vapor-phase reflow, or equivalent processing (peak package body temp. If blank, see bar code label a) Mounted within at factory conditions of 3 C/6% RH. Floor time see below b) Stored at % RH. 3. Devices require baking, before mounting, if: a) Humidity Indicator Card is > % when read at 23 C ± 5 C, or b) 2a or 2b is not met. 4. If baking is required, reference IPC/JEDEC J-STD-33 for bake procedure. Bag seal date (if blank, seal date is identical with date code). Date and time opened: Moisture Level 1 Floor time > 1 Year Moisture Level 4 Floor time 72 Hours Moisture Level 2 Floor time 1 Year Moisture Level 5 Floor time 48 Hours Moisture Level 2a Floor time 4 Weeks Moisture Level 5a Floor time 24 Hours Moisture Level 3 Floor time 168 Hours Moisture Level 6 Floor time 6 Hours Desiccant Humidity Indicator MIL-I-8835 OSRAM OHA539 Note: Moisture-sensitive product is packed in a dry bag containing desiccant and a humidity card. Regarding dry pack you will find further information in the internet. Here you will also find the normative 215-12-14 12
_< C). _< 11 144 Bin2: Q-1-2 Bin3: ML 2 2a 22 C R 11 (9D) D/C: 144 Bin2: Q-1-2 Bin3: ML Temp ST 2 22 C R 2a Version 1.3 SFH 725 references like JEDEC. Transportation Packing and Materials Barcode label Barcode label CAUTION This bag contains MOISTURE SENSITIVE OPTO SEMICONDUCTORS LEVEL If blank, see bar code label 1. Shelf life in sealed bag: 24 months at < 4 C and < 9% relative humidity (RH). 2. After this bag is opened, devices that will be subjected to infrared reflow, vapor-phase reflow, or equivalent processing (peak package body temp. If blank, see bar code label a) Mounted within at factory conditions of 3 C/6% RH. Floor time see below b) Stored at % RH. 3. Devices require baking, before mounting, if: a) Humidity Indicator Card is > % when read at 23 C ± 5 C, or b) 2a or 2b is not met. 4. If baking is required, reference IPC/JEDEC J-STD-33 for bake procedure. Bag seal date (if blank, seal date is identical with date code). Date and time opened: Moisture Level 1 Floor time > 1 Year Moisture Level 4 Floor time 72 Hours Moisture Level 2 Floor time 1 Year Moisture Level 5 Floor time 48 Hours Moisture Level 2a Floor time 4 Weeks Moisture Level 5a Floor time 24 Hours Moisture Level 3 Floor time 168 Hours Moisture Level 6 Floor time 6 Hours OSRAM Opto Semiconductors (6P) BATCH NO: 221998 (1T) LOT NO: 123GH1234 Muster (X) PROD NO: 1 (9D) D/C: 425 (Q)QTY: 2 LSY T676 Bin1: P-1-2 Multi TOPLED Temp ST 24 C R 3 26 C RT Additional TEXT R77 DEMY PACKVAR: R18 (G) GROUP: P-1+Q-1 OSRAM Opto Semiconductors (6P) BATCH NO: 221998 (1T) LOT NO: 123GH1234 Muster (X) PROD NO: 1 425 (Q)QTY: 2 LSY T676 Bin1: P-1-2 Multi TOPLED 24 C R 3 26 C RT Additional TEXT R77 DEMY PACKVAR: R18 (G) GROUP: P-1+Q-1 OSRAM Packing Sealing label OHA244 Dimensions of transportation box in mm Width Length Height 2 ± 5 352 ± 5 195 ± 5 352 ± 5 3 ± 5 33 ± 5 215-12-14 13
Version 1.3 SFH 725 Disclaimer Language english will prevail in case of any discrepancies or deviations between the two language wordings. Attention please! The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved. Due to technical requirements components may contain dangerous substances. For information on the types in question please contact our Sales Organization. If printed or downloaded, please find the latest version in the Internet. Packing Please use the recycling operators known to you. We can also help you get in touch with your nearest sales office. By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred. Components used in life-support devices or systems must be expressly authorized for such purpose! Critical components* may only be used in life-support devices** or systems with the express written approval of OSRAM OS. *) A critical component is a component used in a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or the effectiveness of that device or system. **) Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain and sustain human life. If they fail, it is reasonable to assume that the health and the life of the user may be endangered. 215-12-14 14
Version 1.3 SFH 725 Glossary 1) Thermal resistance: junction -ambient, mounted on PC-board (FR4), padsize 16 mm 2 each 2) Typical Values: Due to the special conditions of the manufacturing processes of LED, the typical data or calculated correlations of technical parameters can only reflect statistical figures. These do not necessarily correspond to the actual parameters of each single product, which could differ from the typical data and calculated correlations or the typical characteristic line. If requested, e.g. because of technical improvements, these typ. data will be changed without any further notice. 215-12-14 15
Version 1.3 SFH 725 Published by OSRAM Opto Semiconductors GmbH Leibnizstraße 4, D-9355 Regensburg www.osram-os.com All Rights Reserved. 215-12-14 16