Precision 16-Channel/Dual 8-Channel CMOS Analog Multiplexers

Similar documents
Precision 16-Channel/Dual 8-Channel CMOS Analog Multiplexers

DG2707. High Speed, Low Voltage, 3, Differential 4:1 CMOS Analog Multiplexer/Switch. Vishay Siliconix FEATURES DESCRIPTION APPLICATIONS

Precision 8-Ch/Dual 4-Ch Low Voltage Analog Multiplexers

Improved Quad CMOS Analog Switches

3.2, Fast Switching Speed, +12 V / +5 V / +3 V / ± 5 V, 4- / 8-Channel Analog Multiplexers

Powered-off Protection, 1, 1.8 V to 5.5 V, SPDT Analog Switch (2:1 Multiplexer)

Powered-off Protection, 6, 1.8 V to 5.5 V, SPDT Analog Switch (2:1 Multiplexer)

Low-Voltage Single SPDT Analog Switch

N-Channel 30 V (D-S) MOSFET

Low-Voltage Single SPDT Analog Switch

8-Ch/Dual 4-Ch High-Performance CMOS Analog Multiplexers

P-Channel 8 V (D-S) MOSFET

P-Channel 20 V (D-S) MOSFET

Small Signal Fast Switching Diode

N-Channel 200-V (D-S) MOSFET

N-Channel 8 V (D-S) MOSFET

N-Channel 30 V (D-S) MOSFET

P-Channel 30 V (D-S) MOSFET

Small Signal Fast Switching Diode FEATURES PART ORDERING CODE INTERNAL CONSTRUCTION TYPE MARKING REMARKS

PC Card (PCMCIA) Dual Interface Switch

N-Channel 30-V (D-S) MOSFET

Zener Diodes FEATURES APPLICATIONS. MINIMUM ORDER QUANTITY BZX85-series BZX85-series-TR 5000 (52 mm tape on 13" reel) /box

N-Channel 20 V (D-S) MOSFET

Quad SPST CMOS Analog Switches

FEATURES APPLICATIONS

P-Channel 30-V (D-S) MOSFET

N-Channel 150 V (D-S) MOSFET

N-Channel 30-V (D-S) MOSFET

PC Card (PCMCIA) Interface Switch

Small Signal Zener Diodes

DG3157. High-Speed, Low R ON, SPDT Analog Switch. Vishay Siliconix. (2:1 Multiplexer/Demultiplexer Bus Switch) DESCRIPTION FEATURES

P-Channel 30 V (D-S) MOSFET

Aluminum Electrolytic Capacitors Power Long Life Snap-In

Conformal Coating, Single-In-Line Thin Film Resistor, Through Hole Networks

N-Channel 100 V (D-S) MOSFET

P-Channel 20 V (D-S) MOSFET

SPECIFICATIONS (T J = 25 C, unless otherwise noted)

Small Signal Zener Diodes

P-Channel 60-V (D-S) MOSFET

FEATURES BENEFITS APPLICATIONS

Through Hole Transformers, Pulse, Trigger Type

P-Channel 2.5 V (G-S) MOSFET

P-Channel 30-V (D-S) MOSFET

P-Channel 30-V (D-S) MOSFET

Complementary (N- and P-Channel) MOSFET

Hyperfast Rectifier, 1 A FRED Pt

N-Channel 200-V (D-S) MOSFET

N-Channel 30 V (D-S) MOSFET

N-Channel 20 V (D-S) MOSFET

N-Channel 40-V (D-S) MOSFET

P-Channel 30-V (D-S) MOSFET

Aluminum Capacitors Power Standard Miniature Snap-In

N-Channel 20-V (D-S) MOSFET

N-Channel 100-V (D-S) MOSFET

N-Channel 60 V (D-S) MOSFET

Power MOSFET D 2 PAK (TO-263) G D. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 200 Gate-Source Voltage V GS ± 20

Small Signal Fast Switching Diode

P-Channel 30-V (D-S) MOSFET

P-Channel 30-V (D-S) MOSFET

Low-Power, High-Speed CMOS Analog Switches

N-Channel 12 V (D-S) MOSFET

Hyperfast Rectifier, 2 x 15 A FRED Pt

P-Channel 30 V (D-S) MOSFET

Small Signal Zener Diodes, Dual

N-Channel 30-V (D-S) MOSFET

Power Resistor for Mounting onto a Heatsink Thick Film Technology

Compact, Low Power Consumption, Triple SPDT (Triple 2:1 Multiplexers)

N-Channel 30-V (D-S) MOSFET

Aluminum Capacitors SMD (Chip) Long Life Vertical

Battery Disconnect Switch

P-Channel 20 V (D-S) MOSFET

P-Channel 150-V (D-S) MOSFET

LC2 MOS 4-/8-Channel High Performance Analog Multiplexers ADG408/ADG409

Small Signal Schottky Diode FlipKY Gen 2

N-Channel 30-V (D-S) MOSFET

N-Channel 60 V (D-S) MOSFET

N-Channel 150 V (D-S) MOSFET

N-Channel 25 V (D-S) MOSFET

P-Channel 30 V (D-S) MOSFET

Power Resistor for Mounting onto a Heatsink Thick Film Technology

1 pc Charge Injection, 100 pa Leakage CMOS 5 V/5 V/3 V 4-Channel Multiplexer ADG604

N-Channel 30 V (D-S) MOSFET

8-Channel, Dual 4-Channel, Triple 2-Channel Multiplexers

P-Channel 30-V (D-S) MOSFET

Small Signal Fast Switching Diode

N-Channel 60 V (D-S) MOSFET

Resin-Molded, Radial-Lead Solid Tantalum Capacitors

High Brightness LED Power Module

P-Channel 30 V (D-S) MOSFET

High Brightness LED Power Module

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

onlinecomponents.com

CMOS ±5 V/+5 V/+3 V Triple SPDT Switch ADG633

Small Signal Fast Switching Diode FEATURES

Ultrafast Rectifier, 8 A FRED Pt

P-Channel 20 V (D-S) MOSFET

Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection

CMOS, +1.8 V to +5.5 V/ 2.5 V, 2.5 Low-Voltage, 8-/16-Channel Multiplexers ADG706/ADG707 REV. A

N-Channel 40-V (D-S) MOSFET

Power Resistor for Mounting onto a Heatsink Thick Film Technology

Transcription:

G6B, G7B Precision 6-Channel/ual 8-Channel CMOS nalog Multiplexers ESCRIPTION The G6B and G7B are high performance analog multiplexers. Their ultra-low switch charge injection, low channel capacitance, and low leakage level allows them to achieve superior switching performance. The G6B is a 6-channel single-ended analog multiplexer designed to connect one of sixteen inputs to a common output as determined by a 4-bit binary address (,, 2, 3). The G7B is a dual 8-channel differential analog multiplexer designed to connect one of eight differential inputs to a common dual output as determined by its 3-bit binary address (,, 2). Break-before-make switching action protects against momentary crosstalk between adjacent channels. n on channel conducts current equally well in both directions. In the off state each channel blocks voltages up to the power supply rails. n enable () function allows the user to reset the multiplexer/demultiplexer to all switches off for stacking several devices. ll control inputs, addresses (x) and enable () are TTL compatible over the full specified operating temperature range. The G6B and G7B are fabricated on an enhanced SG-II CMOS process that achieves improved performance on: reduced charge injection, lower device leakage, and minimized parasitic capacitance. s the G6, G7 has a long history in the industry with many suppliers offering copies, and in some cases improved variations, with the best in class improvements, the Vishay Siliconix new version of the G6B, G7B are the superior alternatives to what is currently available. pplications for the G6B, G7B include high speed and high precision data acquisition, audio signal switching and routing, TE systems, and avionics. High performance and low power dissipation make them ideal for battery operated and remote instrumentation applications. The G6B and G7B have the absolute maximum voltage rating extended to 44 V. dditionally, single supply operation is also allowed. n epitaxial layer prevents latch-up. The G6B and G7B are both available in 28-lead SOIC and TSSOP package options with extended temperature range of - 4 C to + 2 C. For more information, refer to G6B, G7B evaluation board note. FETURES Operate with single or dual power supply to analog signal swing range 44 V power supply maximum rating Extended operate temperature range: - 4 C to + 2 C Low leakage typically < 3 p Low charge injection - Q INJ = pc Low power - I SUPPLY : µ TTL compatible logic > 2 m latch up current per JES78 vailable in SOIC28 and TSSOP28 packages Superior alternative to: - G6, G6, HI-6 - G7, G7, HI-7 Compliant to RoHS directive 22/9/EC Halogen-free according to IEC 6249-2-2 definition BEFITS Reduced switching errors Reduced glitching Improved data throughput Reduced power consumption Increased ruggedness Wide supply ranges (± V to ± 2 V) PPLICTIONS ata acquisition systems udio and video signal routing TE systems Medical instrumentation ocument Number: 6 S-66-Rev. B, 22-Mar-

G6B, G7B FUTIONL BLOCK IGRM N PIN CONFIGURTION G6B ual-in-line SOIC and TSSOP G7B ual-in-line SOIC and TSSOP 28 28 a 2 27 b 2 27 3 26 S 8 3 26 S 8a S 6 4 2 S 7 S 8b 4 2 S 7a S 24 S 6 S 7b 24 S 6a S 4 6 23 S S 6b 6 23 S a S 3 7 22 S 4 S b 7 22 S 4a S 2 8 2 S 3 S 4b 8 2 S 3a S 9 2 S 2 S 3b 9 2 S 2a S 9 S S 2b 9 S a S 9 8 S b 8 GN 2 ecoders/rivers 7 GN 2 ecoders/rivers 7 3 6 3 6 3 4 2 4 2 Top View Top View G6B PLCC G7B PLCC S 6 S 8 S 8b b S a 8a 4 3 2 28 27 26 4 3 2 28 27 26 S 2 S 7 S 7b 2 S 7a S 4 6 24 S 6 S 6b 6 24 S 6a S 3 7 23 S S b 7 23 S a S 2 8 22 S 4 S 4b 8 22 S 4a S 9 2 S 3 S 3b 9 2 S 3a S 2 S 2 S 2b 2 S 2a S 9 9 S ecoders/rivers S b ecoders/rivers 9 S a 2 3 4 6 7 8 2 3 4 6 7 8 GN T op V iew 3 2 GN T op V iew 2 2 ocument Number: 6 S-66-Rev. B, 22-Mar-

G6B, G7B TRUTH TBLE G6B 3 2 On Switch X X X X None 2 3 4 6 7 8 9 2 3 4 6 TRUTH TBLE G7B 2 On Switch X X X None 2 3 4 6 7 8 Logic = V IL.8 V Logic = V IH 2.4 V X = o not care ORERING INFORMTION G6B Temp. Range Package Part Number 28-Pin SOIC G6BEW-T-GE3-4 C to 2 C 28-Pin TSSOP G6BEQ-T-GE3 28-Pin PLCC G6B-T-GE3 ORERING INFORMTION G7B Temp. Range Package Part Number 28-Pin SOIC G7BEW-T-GE3-4 C to 2 C 28-Pin TSSOP G7BEQ-T-GE3 28-Pin PLCC G7B-T-GE3 BSOLUTE MXIMUM RTINGS Parameter Limit Unit 44 Voltages Referenced to GN 2 igital Inputs a () - 2 to () + 2, V S, V or 2 m, whichever occurs first V Current (ny terminal) 3 Peak Current, S or (Pulsed at ms, % duty cycle max.) m Storage Temperature (EW, EQ, suffix) - 6 to C Power issipation (Packages) b 28-Pin TSSOP d 87 28-Pin Wide Body SOIC c 84 28-Pin PLCC e 693 Thermal Resistance (θ J- ) b 28-Pin TSSOP d 97.9 28-Pin Wide Body SOIC c 9.3 28-Pin PLCC e 47.3 Notes: a. Signals on S X, X or IN X exceeding or will be clamped by internal diodes. Limit forward diode current to maximum current ratings. b. ll leads soldered or welded to PC board. c. erate. mw/ C above 7 C. d. erate.2 mw/ C above 7 C. e. erate 2.2 mw/ C above 7 C. mw C/W ocument Number: 6 S-66-Rev. B, 22-Mar- 3

G6B, G7B SPECIFICTIONS Test Conditions Unless Otherwise Specified = V, = - V (± %) V X, V = 2.4 V,.8 V a Temp. b Typ. c Suffix - 4 C to 2 C Suffix - 4 C to 8 C Parameter Symbol Min. d Max. d Min. d Max. d Unit nalog Switch nalog Signal Range e V NLOG Full - - V rain-source Room 7 3 3 R On-Resistance S(on) V = ± V, I S = - m Full 4 4 Ω R S(on) Matching ΔR S(on) V = ± V Room Room. - - Source Off Leakage Current I S(off) Full - - V = ± V Room. - - V S = V G6B rain Off Leakage Current I V = V Full - - (off) Room. - - G7B n Full - - rain On Leakage Current I (on) Room. - - V S = V = V G6B Full - - sequence each switch on Room. - - G7B Full - - igital Control Logic High Input Voltage V INH Full 2.4 2.4 Logic Low Input Voltage V INL Full.8.8 V Logic High Input Current I IH V X, V = 2.4 V Full - - Logic Low Input Current I IL V X, V =.8 V Full - - µ Logic Input Capacitance e C in f = MHz Room pf ynamic Characteristics Transition Time t TRNS VS 6 = - V/+ V, R L = MΩ, C L = 3 pf VS = + V/- V, see figure 2 VS Break-Before-Make Interval t = VS 6 =. V, C L = 3 pf, OP R L = kω, see figure 4 ± ± Room 9 3 3 Full 36 36 Room 84 3 3 Full Room 2 2 Enable Turn-On Time t ON() VS = V, VS 2 to VS 6 = V, Full 3 3 R L = kω, C L = 3 pf Enable Turn-Off Time t see figure 3 Room 3 2 2 OFF() Full 22 22 Charge Injection e Q INJ C L = nf, R G = Ω, V G = V Full pc Off Isolation e C OIRR L = pf, R L = Ω, G6B - 8 Room f = MHz G7B - 84 db Crosstalk e C XTLK L = pf, R L = Ω, G6B - 8 Room f = MHz G7B - 84-3 db Bandwidth e BW R L = Ω G6B 4 Room G7B 27 MHz Total Harmonic istortion e TH R L = kω, V rms Room.4 % Source Off Capacitance e C S(off) Room 3 rain Off Capacitance e G6B Room 3 C (off) f = MHz G7B Room 7 pf rain On Capacitance e G6B Room 38 C (on) G7B Room 24 Power Supply Room... Positive Supply Current I+ m V X, V = V or V Full.. Negative Supply Current I- Full - - µ ns 4 ocument Number: 6 S-66-Rev. B, 22-Mar-

G6B, G7B SPECIFICTIONS Single Supply 2 V Test Conditions Unless Otherwise Specified = 2 V, = V (± %) V X, V = 2.4 V,.8 V a Temp. b Typ. c Suffix - 4 C to 2 C Suffix - 4 C to 8 C Parameter Symbol Min. d Max. d Min. d Max. d Unit nalog Switch nalog Signal Range e V NLOG Full 2 2 V On-Resistance R S(on) Room 27 4 4 V = V/ V, I S = m Full 6 6 Ω R S(on) Matching ΔR S(on) Room I S(off) Room. - - Full - - - Switch Off Leakage Current I (off) = 2 V, = V Room. - - V = V/ V, G6B V S = V/ V Full - - I (off) G7B Room. - - Full - - n Channel On Leakage Current I (on) Room. - - G6B = 2 V, = V Full - - V S = V = V/ V Room. - - G7B Full - - igital Control Logic High Input Voltage V INH Full 2.4 2.4 Logic Low Input Voltage V INL Full.8.8 V Logic High Input Current I IH V X, V = 2.4 V Full - - Logic Low Input Current I IL V X, V =.8 V Full - - µ Logic Input Capacitance e C in f = MHz Room pf ynamic Characteristics Transition Time t TRNS VS = V/ V, VS 6 = V/ V, R L = MΩ, C L = 3 pf, see figure 2 Break-Before-Make Interval t OP VS = VS 6 = V, C L = 3 pf, R L = kω, see figure 4 Room 228 38 38 Full 4 4 Room 4 4 Full Room 97 3 3 Enable Turn-On Time t ON() VS = V, VS 2 to VS 6 = V, Full 42 42 R L = kω, C L = 3 pf Enable Turn-Off Time t see figure 3 Room 46 2 2 OFF() Full 22 22 Charge Injection e Q INJ C L = nf, R G = Ω, V G = V Full 4 pc Off Isolation e C OIRR L = pf, R L = Ω G6B - 86 Room f = MHz G7B - 84 db Crosstalk e C X L = pf, R L = Ω G6B - 8 TLK Room f = MHz G7B - 84-3 db Bandwidth e BW R L = Ω Total Harmonic istortion e TH R L = kω, V RMS, f = 2 Hz to 2 khz G6B Room 4 G7B 9 ns MHz Room.23 % ocument Number: 6 S-66-Rev. B, 22-Mar-

G6B, G7B SPECIFICTIONS Single Supply 2 V Test Conditions Unless Otherwise Specified = 2 V, = V (± %) Parameter Symbol V X, V = 2.4 V,.8 V a Temp. b Typ. c ynamic Characteristics Source Off Capacitance e C S(off) 4 rain Off Capacitance e G6B 37 C (off) f = MHz G7B Room 2 Suffix - 4 C to 2 C Suffix - 4 C to 8 C Min. d Max. d Min. d Max. d Channel On Capacitance e G6B 43 C (on) G7B 26 Power Supply Room... Power Supply Current I+ V X, V = V, or V Full.. Notes: a. V X, V = input voltage perform proper function. b. Room = 2 C, Full = as determined by the operating temperature suffix. c. Typical values are for ESIGN I ONLY, not guaranteed nor subject to production testing. d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this datasheet. e. Guaranteed by design, not subject to production test. f. ΔR S(on) = R S(on) max. - R S(on) min. Unit pf m Stresses beyond those listed under bsolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SCHEMTIC IGRM Typical Channel GN V RE F X Level Shift ecode/ rive S S n Figure. 6 ocument Number: 6 S-66-Rev. B, 22-Mar-

G6B, G7B TYPICL CHRCTERISTICS 2 C, unless otherwise noted R ON - On-Resistance (Ω) 4 4 3 3 2 2 T = 2 C I S = m = + V = - V = + 2 V = - 2 V = +. V = -. V = +.8 V = -.8 V = + 3. V = - 3. V R ON - On-Resistance (Ω) 4 4 3 3 2 2 T = 2 C I S = m =.8 V = 2 V = 2 V - 2 - - - 2 2 4 6 8 2 4 6 8 2 V On-Resistance vs. V and ual Supply Voltage V On-Resistance vs. V and Single Supply Voltage R ON - On-Resistance (Ω) 7 6 4 3 2 = +. V, = -. V I S = m + 2 C + 8 C + 2 C - 4 C R ON - On-Resistance (Ω) 4 4 3 3 2 2 = +.8 V, = -.8 V I S = m + 2 C + 8 C + 2 C - 4 C - - 4-3 - 2-2 3 4 V On-Resistance vs. nalog Voltage and Temperature - - - V On-Resistance vs. nalog Voltage and Temperature R ON - On-Resistance (Ω) 4 4 3 3 2 2 = + 3. V, = - 3. V I S = m + 2 C + 8 C + 2 C - 4 C R ON - On-Resistance (Ω) 4 4 3 3 2 2 = + V, = - V I S = m + 2 C + 8 C + 2 C - 4 C - - - ocument Number: 6 S-66-Rev. B, 22-Mar- V On-Resistance vs. nalog Voltage and Temperature - - - V On-Resistance vs. nalog Voltage and Temperature 7

G6B, G7B TYPICL CHRCTERISTICS 2 C, unless otherwise noted R ON - On-Resistance (Ω) 4 4 3 3 2 2 = + 2 V, = - 2 V I S = m + 2 C + 8 C + 2 C - 4 C - 2 - - - 2 R ON - On-Resistance (Ω) 7 6 = +.8 V, = V 6 I S = m 4 4 3 3 2 2 + 2 C + 8 C + 2 C - 4 C 2 3 4 6 7 8 9 2 V On-Resistance vs. nalog Voltage and Temperature V On-Resistance vs. nalog Voltage and Temperature R ON - On-Resistance (Ω) 7 6 6 4 4 3 3 2 2 = + 2 V, = V I S = m + 2 C + 8 C + 2 C - 4 C 2 3 4 6 7 8 9 2 R ON - On-Resistance (Ω) 4 4 3 3 2 2 = + 2 V, = V I S = m + 2 C + 8 C + 2 C - 4 C 2 4 6 8 2 4 6 8 2 V V On-Resistance vs. nalog Voltage and Temperature On-Resistance vs. nalog Voltage and Temperature Supply Current (µ)... I+ I- I GN = + V = - V Leakage Current (p) 8 6 4 2-2 - 4-6 - 8 I S(OFF) I (OFF) V± = ± V T = 2 C I (ON). K K K M M - - - - Input Switching Frequency (Hz) Supply Current vs. Input Switching Frequency V Leakage Current vs. nalog Voltage 8 ocument Number: 6 S-66-Rev. B, 22-Mar-

G6B, G7B TYPICL CHRCTERISTICS 2 C, unless otherwise noted Leakage Currrent (p) = + V = - V I (ON) I (OFF) I S(OFF) Switching Threshold (V) 2. 2.2 2..7..2..7. - 6-4 - 2 2 4 6 8 2 4. 2 6 4 8 22 26 3 34 Temperature (ºC) Leakage Current vs. Temperature - Supply Voltage Switching Threshold vs. Single Supply V - - 2 Loss G6B - - 2 Loss G7B Loss, OIRR, X TLK (db) - 3-4 - - 6-7 - 8 = + V = - V R L = Ω OIRR X TLK (adjacent) Loss, OIRR, X TLK (db) - 3-4 - - 6-7 - 8 = + V = - V R L = Ω OIRR X TLK (adjacent) - 9-9 - - K X TLK (non-adjacent) M M M G - - K X TLK (non-adjacent) M M M G Frequency (Hz) Insertion Loss, Off-Isolation, Crosstalk vs. Frequency Frequency (Hz) Insertion Loss, Off-Isolation, Crosstalk vs. Frequency Loss, OIRR, X TLK (db) - - 2-3 - 4 - - 6-7 - 8 = + 2 V = V R L = Ω OIRR Loss G6B X TLK (adjacent) Loss, OIRR, X TLK (db) - - 2-3 - 4 - - 6-7 - 8 = + 2 V = V R L = Ω OIRR Loss G7B X TLK (adjacent) - 9-9 - - K X TLK (non-adjacent) M M M G - - K X TLK (non-adjacent) M M M G Frequency (Hz) Insertion Loss, Off-Isolation, Crosstalk vs. Frequency Frequency (Hz) Insertion Loss, Off-Isolation, Crosstalk vs. Frequency ocument Number: 6 S-66-Rev. B, 22-Mar- 9

G6B, G7B TYPICL CHRCTERISTICS 2 C, unless otherwise noted G6B T = 2 C G7B T = 2 C Q INJ - Charge Injection (pc) - = + V = - V = + 2 V = V Q INJ - Charge Injection (pc) - = + V = - V = + 2 V = V - - - - 2 - - - 2 - - 2 - - - 2 V S Charge Injection vs. nalog Voltage V S Charge Injection vs. nalog Voltage 6 G6B V± = ± V T = 2 C 3 3 G7B V± = ± V T = 2 C Capacitance (pf) 4 4 3 3 2 2 C (on) /C S(on) C (off) Capacitance (pf) 2 2 C (on) /C S(on) C (off) C S(off) C S(off) - - - - - - V NLOG (V) V NLOG (V) Capacitance vs. V NLOG Capacitance vs. V NLOG Capacitance (pf) 6 4 4 3 3 2 2 G6B = + 2 V T = 2 C C (on) /C S(on) C (off) Capacitance (pf) 3 3 2 2 G7B = + 2 V T = 2 C C (off) C (on) /C S(on) C S(off) C S(off) 2 3 4 6 7 8 9 2 2 3 4 6 7 8 9 2 V NLOG (V) V NLOG (V) Capacitance vs. V NLOG Capacitance vs. V NLOG ocument Number: 6 S-66-Rev. B, 22-Mar-

G6B, G7B TYPICL CHRCTERISTICS 2 C, unless otherwise noted R L = kω V Signal = V RMS TH (%) V = + 2 V. V = ± V. Frequency (Hz) TH vs. Frequency TEST CIRCUITS + V 3 2 S ± V Ω + 3. V GN G6B S 2 - S 7 S 6 MΩ - V ± V 3 pf Logic Input 3 V V % t r < 2 ns t f < 2 ns Ω + 3. V + V 2 S b S a - S 4a, a S G7B 8b b GN MΩ - V ± V ± V 3 pf Switch Output V S V V S6 t TR N S S ON 9 % S 6 ON 9 % t TR N S Figure 2. Transition Time ocument Number: 6 S-66-Rev. B, 22-Mar-

G6B, G7B TEST CIRCUITS + V S V Ω S 2 - S 6 G6B 2 3 GN - V kω 3 pf Logic Input 3 V V t ON() % t r < 2 ns t f < 2 ns t OFF() + V Switch Output 9 % 9 % S b V V S a - S 8a, a S 2b - S 8b Ω G7B 2 GN b kω 3 pf - V Figure 3. Enable Switching Time + V + 3. V Ω ll S and a G6B G7B 2 b, 3 GN - V kω + V 3 pf Logic Input Switch Output 3 V V V % 8 % t OP t r < 2 ns t f < 2 ns Figure 4. Break-Before-Make Interval 2 ocument Number: 6 S-66-Rev. B, 22-Mar-

G6B, G7B TEST CIRCUITS + V R g S X Logic Input 3 V V OFF ON OFF Channel Select X GN - V C L nf Switch Output Δ is the measured voltage due to charge transfer error Q, when the channel turns of f. Q INJ = C L x Δ Δ Figure. Charge Injection + V + V V S R g = Ω V IN S S 6 UT V S R g = Ω UT V IN S S X S 6 X GN R L Ω R L Ω X GN R L Ω 3 V - V Of f Isolation = 2 log U T V IN 3 V - V Crosstalk = 2 log UT V IN Figure 6. Off Isolation Figure 7. Crosstalk + V + V V S V IN S R g = Ω X GN R L Ω Channel Select X GN S S 8 Meter Impedance nalyzer or Equivalent f = MHz 3 V - V Insertion Loss = 2 log Figure 8. Insertion Loss U T V IN V or 3 V - V Figure 9. Source rain Capacitance maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see /ppg?6. ocument Number: 6 S-66-Rev. B, 22-Mar- 3

Package Information ll Corner R. (max) 8 Typ..73 Pin Indicator.7x.38.2 P Surface Polished.2 4.4 6.4..27 Typ. R.. R.. 4 2.6... etail.432.2.47.2.62 2 (8X) 9.7.2.28 Typ..6 Typ. ECN: S-3946 Rev. C, 9-Jul- WG: 8.. (Ref).6.2.. etail.686. NOTES:. Package Surface: Shiny Finish (Ro..2). 2. Package Warpage:.2 (max). 3. Package Corner Radius: R. mm (max). 4. Top to BTM Cavity Mismatch:.37 (max).. Tolerance:. unless otherwise specified. 6. End Flash Max:.6 mm. ocument Number: 722 6-Jul-

Package Information PLCC: 28-LE -SQURE -SQURE B 2 B e 2 IM. MILLIMETERS IHES MIN. MX. MIN. MX. 4.2 4.7.6.8 2.29 3.4.9.2 2. -.2 - B.33.3.3.2 B.66.82.26.32 2.32 2.7.48.49.43.82.4.46 2 9.9.92.39.43 e.27 BSC. BSC ECN: T9-766-Rev., 28-Sep-9 WG: 49. mm.4" ocument Number: 7264 28-Sep-9

Package Information SOIC (WIE-BOY): 28-LES.32..6.2 CVITY NO. 28 27 26 2 24 23 22 2 2 9 8 7 6.334. R.4.47.. R.8.29. R.9 2 3 4 6 7 8 9 2 3 4 R.4 4 2.7..32... PIN INICTOR.47.7. dp SURFCE POLISHE ETIL.334..29..9..7..98.2.2 4 7 (4 ).4.. TYP..7.3 R.4.82 ±.32.29..46.4 ETIL ll imensions In Inches ECN: E-229-Rev., -ug- WG: 8 Revision: -ug- ocument Number: 7268 THIS OCUMT IS SUBJECT TO CHNGE WITHOUT NOTICE. THE PROUCTS ESCRIBE HEREIN N THIS OCUMT RE SUBJECT TO SPECIFIC ISCLIMERS, SET FORTH T /doc?9

Legal isclaimer Notice Vishay isclaimer LL PROUCT, PROUCT SPECIFICTIONS N T RE SUBJECT TO CHNGE WITHOUT NOTICE TO IMPROVE RELIBILITY, FUTION OR ESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, Vishay ), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. ll operating parameters, including typical parameters, must be validated for each customer application by the customer s technical experts. Product specifications do not expand or otherwise modify Vishay s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Material Category Policy Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under irective 2/6/EU of The European Parliament and of the Council of June 8, 2 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant. Please note that some Vishay documentation may still make reference to RoHS irective 22/9/EC. We confirm that all the products identified as being compliant to irective 22/9/EC conform to irective 2/6/EU. Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEEC JS79 standards. Please note that some Vishay documentation may still make reference to the IEC 6249-2-2 definition. We confirm that all the products identified as being compliant to IEC 6249-2-2 conform to JEEC JS79 standards. Revision: 2-Oct-2 ocument Number: 9