arxiv: v2 [q-bio.nc] 13 Jan 2016

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1 Spike-Threshold Variation Originated from Separatrix-Crossing in Neuronal Dynamics Longfei Wang 1, Hengtong Wang 2, Lianchun Yu 1, and Yong Chen 3,4,* arxiv: v2 [q-bio.nc] 13 Jan Institute of Theoretical Physics, Lanzhou University, Lanzhou, Gansu 73, China 2 College of Physics and Information Technology, Shaanxi Normal University, Xi an 7162, China 3 Center of Soft Matter Physics and its Application, Beihang University, Beijing 1191, China 4 School of Physics and Nuclear Energy Engineering, Beihang University, Beijing 1191, China * ychen@buaa.edu.cn ABSTRACT Threshold potential for action potential generation is an important regulator of neuronal signal transduction, yet the mechanism of threshold variability is still unclear. In this paper, we propose that threshold phenomena can be classified as parameter threshold and state threshold, and voltage thresholds which belong to state threshold are determined by separatrix in state space. We show that separatrix generally exist in state space of neuron models and the previously assumed threshold evolving equation versus time is naturally deduced from the separatrix. In the view of neuron dynamics, the threshold voltage variation with different stimulus is determined by crossing the separatrix at different points in state space. We suggest that the separatrix-crossing mechanism in state space is the intrinsic dynamic mechanism for threshold voltages and post-stimulus threshold parameters. The proposals are also systematically verified in four example models, three of which have analytic separatrices and the other is the classic Hodgkin-Huxley model. The sepratrix-crossing framework provides a general thought of the neuronal threshold and will facilitates understanding the nature of threshold variability. Introduction Neurons encode stimuli into time sequences of stereotypical membrane potential pulses that are known as action potentials (APs). Usually, it is assumed that the firing of an AP is determined by whether the membrane potential exceeds a threshold value; however, the threshold is not a constant value, and threshold variation (i.e. a dynamic threshold) has been observed in the electrophysiological experiments both in vivo 1 7 and in vitro 5,8,9. Dynamic thresholds can shape the response of neurons 5 and enhance the coincidence detection 1,2,4 as well as improve the feature selectivity 7 of single neurons, while filter weak asynchronous activity in neuronal networks 2,1. Threshold variability also participates in precise temporal coding 8,11,12 and influences metabolic energy efficiency 13. Although dynamic threshold plays an important role in neuronal information processing, its mechanism has not been well characterized. A pioneering study of threshold accommodation assumed that the threshold voltage follows a simple temporal exponential process 14. Accordingly, similar first-order kinetic equations that describe threshold variation are still used by contemporary researchers 5,8,15 17.The equation has following form: τ θ dθ = θ θ, where θ denote the dynamic threshold, θ is a constant threshold and τ θ is the time constant. In investigating of the quantitative laws of AP generation, Hodgkin and Huxley found that the threshold could be increased by Na + channel inactivation and K + channel activation and suggested that the threshold might be a function of the membrane potential 18,19. Indeed, recent experiments have shown that the threshold of cortical neurons in vivo have a positive correlation with the membrane potential and a negative correlation with the rate of membrane depolarization 1,2,2. Additionally, more ion channel types may participate in determining the threshold variation 21,22. In principle, the relation of threshold either with membrane potential or with its rising rate is determined by all ion channels activations and inactivations 23,24. If more than one type of gating subunits of ion channels could participate in the threshold variation, equation (1) may not be a good approximation. In the 195s, FitzHugh proposed that the separatrix in state space determined the threshold of Hodgkin-Huxley neuron 25. Nevertheless, this concept has not sufficiently captured the attention of neurologists. Until recently, similar concept has been hypothesized or reintroduced by researchers Additionally, Platkiewicz and Brette theoretically deduced a simplified threshold equation that can quantify the contribution of different ion channels and synaptic conductances to spike thresholds 15,16. However, the general mechanism of dynamic threshold for AP generation in a specified (1)

2 neuron has not been well understood, especially when the neuron is under differing stimuli, such as rectangular pulse or ramp current 8,23,27. There also exists an ongoing debate of the sources of threshold variability in real neurons 3,4,9,17, In this paper, we mainly focus on the threshold voltage variation of deterministic single compartment model neurons, which corresponds to a functional nerve membrane with uniform trans-membrane potential. We show that the threshold voltage is naturally not a constant but a set of membrane potentials. Additionally, the threshold set may change with the stimulus, but the variation of post-stimulus threshold is determined by crossing the threshold set of resting state. In this article, we first propose the threshold phenomena in excitable neurons can be classified as parameter threshold and state threshold, e.g. current threshold and voltage threshold, respectively. We claim that threshold voltages belong to state threshold and have the mechanism distinguished from the bifurcation theory that describe parameter threshold. We demonstrate that separatrix, i.e. a set of instantaneous threshold states, generally exist in different types of excitable neuron. Then we introduce a general form of a separatrix in a general excitable conductance-based neuron model. According to the form of a separatrix, the general threshold evolving equation versus time is deduced and transformed into equation (1) for the simplest case. Using the separatrix-crossing framework, we then analyse the threshold voltages and threshold phenomena in different models. The threshold set (i.e. separatrices) is not a fixed value but a threshold point in a Quadratic Integrate-and-Fire (QIF) model 34, threshold curves in two-dimensional (2D) models, a threshold plane in a three-dimensional piecewise linear ((3D- PWL) model and a threshold hypersurface in the Hodgkin-Huxley model. Also, the threshold sets of those models dynamically vary with external stimuli. Through simple but analytic threshold function in the QIF model as well as the two-dimensional and three-dimensional piecewise linear model, we demonstrate that separatrix-crossing in the state space is one origin of threshold variability. We also deduce the threshold variation equations in those models and check whether those equations can be simplified to equation (1). State dependent threshold parameters, e.g. the threshold timing and amplitude of voltage clamp, step current and ramp current, are also determined by separatrix in those models. Additionally, the numerical simulation of threshold phenomena in the Hodgkin-Huxley model following voltage clamping demonstrate that the separatrix-determined threshold is valid in real neurons with higher dimensional dynamics. Results Classification and mechanisms of threshold phenomena Neuronal threshold phenomena have different types. In general, neuronal threshold phenomena can be categorized by their application domains: in vitro, in vivo and in model 15. Threshold phenomena in neural models have been mathematically divided as discontineous-, singular-point- and quasi threshold phenomenon by Fitzhugh 25. Here, we proposed that the threshold can be generally categorized as parameter threshold and state threshold. Parameter and state have distinct meanings in a model. While in reality, in brief, parameters are properties of a functional nerve membrane that do not change in the AP firing-time scale (e.g., maximum ion channel conductance and reversal potentials of different ion channel types) or independent external control quantities (e.g., amplitude of injected DC), whereas variables/states are those properties that varied during APs. There exists two common neuronal threshold phenomena named intuitively, threshold voltage and threshold current (usually means amplitude of injected DC). The voltage threshold belongs to state threshold, and threshold current is a threshold parameter. The classification is general as it is suitable for both theory and application. In the following paragraphs, the single word threshold by default means threshold voltage, i.e., threshold membrane potential, unless particular types are specified. Different threshold phenomena have different mechanisms. Parameter threshold is usually explained by bifurcation theory, e.g. threshold amplitude of DC, while the mechanism of state threshold has not been well characterized. In this paper, we will show that separatrix determine time-varying threshold phenomena, including the threshold voltages and state-dependent (i.e. timing related) threshold parameters, e.g. threshold amplitude and times of step or ramp current. A general mechanism of threshold voltage and threshold variation Here, we propose that the separatrix in state space determines the threshold voltages and the crossing of separatrix at different state points is one source of threshold variation (the only one source in single compartment deterministic models). We will also show that the separatrix-crossing mechanism determines timing-related threshold parameters. The threshold voltage of action potential does not have a clear definition, and neurologists use varying criteria. The most commonly used threshold voltage determination is an ad hoc value of dv/ 4,8,35 by visual inspection. All the criteria 1,2,2,35 including this method will produce some threshold variation 35. In the article, we define the threshold voltage as instantaneous threshold voltage 17, and demonstrate that the so called separatrix (including quasi-separatrix named by Prescott 36 ) that determine the instantaneous threshold voltages is a mathematical better choice for threshold voltage definition in models. The instantaneous threshold voltage is the voltage value that, when the membrane potential is instantaneously brought above or below, will induce an AP. Slightly different than the method in Ref. 17, we do not limit the threshold to be a depolarized value, 2/24

3 i.e. hyperpolarized threshold by inhibition is also acceptable, and additionally, it is required that the states and parameters are all remain unchanged, including the added stimulus before and after the sudden shift of membrane potential. We start from general equations of an excitable neuron. Since that the threshold of AP generation depends on the complex interaction of different ion channels and the stimulus 21 23, it is necessary to distinguish gating variables, membrane potential and external current. On the other hand, considering the important role of adaptation of the ion channels in threshold variation, we directly write the time derive of ion channel gating variables in the the adaptation form. So, different from the more general differential equations in mathematics 25,37, we construct the general equations of a single compartment excitable conductancebased neuron as C dv dx = f(v,x)+i e (t), = X (v) X, τ X (v) where v is the membrane potential and X is the vector of the gating variables of the ion channels, they are abbreviation of v(t) and X(t), respectively. i e (t) is the external current stimulus and f(v,x) represents the intrinsic ion currents. The equations allow for the focus on the dynamic threshold analysis and help in deriving the first-order threshold equation. As an excitable dynamical system, the neuron defined by equations (2) and (3) must have at least one stable equilibrium. The stable equilibrium of a neuron usually is a resting state or sometimes a small oscillation 34,38. In dynamical system viewpoint, the resting state is a stable fixed point, and a small amplitude oscillation corresponds to a small limit cycle 34,38. As illustrated in Fig. 1, the separatrix for different neuron types defines the instantaneous threshold voltages well. When more than one stable equilibrium exist, the attraction boundary of the resting equilibrium form the separatrix, naturally (see Fig.1 a, c and d). Usually, stable manifolds of a saddle (the mathematical rigid separatrix) play the threshold role and is so called singular-point threshold phenomenon by FitzHugh 25. For those with only one stable equilibrium, the separatrix is the canard of fold saddle type which is called the quasi-separatrix 36 (Fig. 1b). The threshold canard always exist and the threshold phenomenon is distinct when the time constants of the predominant fast and slow variables, i.e. gating variables, largely differ 39,4. It was called quasi threshold phenomenon by FitzHugh, and we name it as canard threshold phenomenon on the recent advances The typical type I and type II neurons belong to the type with more than one equilibrium and the type with only one equilibrium, respectively. However, canard threshold phenomenon and singular-point threshold phenomenon coexist in a type I neuron (Fig. 1c, d and e, e shows the canard threshold phenomenon). It should be noted that the v-nullcline or the curve that dv/ equalling a certain value is not the threshold voltages, especially in Fig. 1d in which initial values have negative dv/. The threshold voltage determined by an ad hoc enough large positive value of dv/ is the mark whether an AP has happened but not an predictive criterion whether an AP will fire. As described in above paragraph, a separatrix is a set of special state points that determine the threshold for AP generation in the phase/state space. For a certain neuron, a separatrix is the function of the state variables and external current, but the specific form depends on parameters of channel gating variables X, such as maximum conductance ḡ X and reversal potential V X 15. Focusing on the dynamic threshold of a neuron, we ignore the specific form of a separatrix and assume that a separatrix has a general form s(v,x,i e )=, so the voltage values at the separatrix, θ(x,i e ) are instantaneous threshold voltages. When the state of a neuron is changed from one side to the other of a separatrix in state space, the neuron switch between AP generation and subthreshold fluctuation. This is so called the separatrix-crossing mechanism. The crossing at different points of a separatrix caused by different stimulus bring about dynamic spike threshold, so the separatrices of a neuron determine the possible variation scale of spike threshold. According to the general form of a separatrix, θ(x,i e ), and the normal form of the time evolving equation of ion channel gating variables (eq.(3)), we observe that the threshold varying versus time: dθ(x,i e ) = θ di e (t) θ dx + i e x X x = θ di e (t) i e + x X θ x x (v) x. (4) τ x (v) This equation indicates that the dynamic threshold depend on both the external current and all the ion channels adaptation. This equation can be simplified to τ x dθ θ (x,i e ) θ, as if several approximation or conditions were satisfied: di e / = (i.e. DC injection), one θ/ x is sufficiently larger than others, dominating θ/ x is a constant and the character time (τ x (v)) is approximately a constant for subthreshold currents. (2) (3) (5) 3/24

4 a 1.5 b Recovery variable, w e.5 d -.5 c c.6 d e Membrane potential v Figure 1. Separatrix determine threshold voltages in state space of type I and type II neuron. The solid lines are real trajectories, the blue and green dashed lines are v-nullcline (dv/ = ) and w-nullcline (dw/ = ), respectively. (a) Sepratrices (magenta and red dash-dotted lines) in type I neuron: Boltzmann-FHN neuron model. Magenta dash-dotted separatrices are the two stable manifolds of the saddle (left blue cycle), one extend to minus infinity while the other connect the unstable node (right blue cycle). The red dash-dotted separatrix is in fact a trajectory that connect unstable node and the fold point of cubic v-nullcline. Black dotted rectangles mark the enlarged region of (c), (d) and (e). (b) Separatrix of type II neuron: classic FHN neuron model. There exists only one equilibrium which represents the resting state, and the so call canard-mechanism 4 determine the threshold set (separatrix) of this type II neuron. (c), (d) and (e) The enlarged regions of (a) show the coexistence of sepratrices and the separatrices determine the thresholds rather than the v-nullcline or the curve that dv/ is equal to a certain value. Up and down blue dotted lines is the curve that dv/ equals.15 and.15, respectively. I e in the equation (5) denote the amplitude of DC and θ(x,i e ) can be written as θ(v,i e ) as gating variable x varies with membrane potential. When only one gating variable concerns the threshold variation, both sides of equation (5) precisely equal. So, equation (5) is the same as the threshold varying equation in Ref. 8 and 17, and the single exponential adaptation of the dynamic threshold in equation (1) is truly an approximation. Threshold states explained by separatrix distinctly distinguished from and at the meantime also associated with threshold parameters described by bifurcation theory. The bifurcation theory describes the fixed parameters variation and does not care about the initial states. While the separatrix determines the threshold phenomenon of different initial values. Take the external current injection as an example, the bifurcation theory describe the threshold amplitude of DC and relate with the rate coding of periodic firing, while the separatrix framework explains the threshold voltages under subthreshold DC or transient inputs (e.g. step current) and affects the temporal coding. However, the specific form of a separatrix is determined by parameters and can be both quantitatively and qualitatively changed by parameters variation. If there are no qualitative change of equalibria with the parameters variation, the threshold states, i.e. separatrix/sepratrices can be quantitatively changed. The qualitative change of separatrix, such as appear or disappear, is usually caused by the qualitative change of equilibria which is described 4/24

5 by bifurcation theory 34,38. Separatrix also determines the timing-related threshold parameters which can be treated as states. Recent experiments and numerical simulations have attempted to elucidate the influence of the external stimulus on threshold voltages by defining threshold voltages as the post-stimulus threshold values 8,23,27. The post-stimulus threshold is the special case that have i e (t > t e )= (t e denote the time that the stimulus is off), i.e. the separatrix after stimulus off is θ(x,). A voltage clamp fixes the membrane potential, but changes other states of the membrane, and therefore, also alters the threshold. After a voltage clamp, AP generation is also determined by whether the clamped voltage exceeds the instantaneous threshold θ(x, ). In a word, after any stimulus, if no AP is produced following the most recent deviation from the resting potential, then whether the system will produce an AP is determined by whether the state after stimulus off crosses the separatrix θ(x,). In the following paragraphs, we apply the separatrix to different models and explain threshold phenomena using the separatrix-crossing mechanism. We systematically present the separatrix and its determined threshold phenomena from the dynamic simple threshold point of a QIF model, the dynamic threshold curve in 2-dimensional models, the dynamic threshold plane in a 3D-PWL to hyperplane in the four dimensional HH model. Dynamic threshold point determined by stimulus In the classic Integrate-and-Fire (IF) model, the threshold voltage is a fixed parameter. Recently, the dynamic threshold has been introduced using artificial mechanisms to predict the spiking series of real neuron 42,43. Here, we demonstrate the dynamic threshold in a one-dimensional quadratic integrate-and-fire (QIF) model 34. The separatrix in a QIF model is a point, which is limited by parameters but varied in response to varying stimulus strength. The dimensionless equation of the QIF model is 34 dv =(v v r)(v v t )+i e (t), if v>v peak, then v v reset. (6) The parameters have a relation v peak > v t > v r > v reset. When i e (t)=, the resting potential is v r and the threshold is v t. According to the bifurcation theory, the QIF model is topologically equal to canonical type I neuron model and have a saddle-node bifurcation if DC current amplitude cross the threshold value I rehobase 34. I rehobase is determined by the equation (v t + v r ) 2 4(v r v t + I e ) =, i.e. the discriminant of square equation dv/ =. For a DC input with the amplitude I e, if I e > I rehobase, the neuron periodically fire; if I e < I rehobase, the two real, unequal roots of equation dv/ = are two equilibria threshold θ and resting potential v rest. For varying external current i e (t), replacing I e by i e (t), then the dynamic threshold θ(i e ) and dynamic resting potential v rest (i e ) is got: θ(i e (t)), v rest (i e (t))= v t+ v r ± (v t + v r ) 2 4(v r v t + i e (t)). (7) 2 Both the threshold θ(i e ) and resting potential v rest (i e ) vary with external current i e (t). The subthreshold depolarizing current elevates the resting potential and lowers the threshold, i.e. decrease the difference between threshold and resting potential, and the hyperpolarized current vice versa. When parameters are fixed in the QIF model, the threshold voltage is only related to the external stimulus. As displayed in Fig. 2a, the same membrane potential may be sub-threshold with no stimulus or suprathreshold when a sufficiently strong current was injected. Once the membrane potential crosses the threshold, the neuron is in the process of AP generation. As AP generation is a fast, but not instantaneous, process, it can be interrupted even during the depolarizing phase. After the moment the threshold is crossed, a strong and long enough hyperpolarized current injection, which elevates the threshold, may interrupt the firing process (see Fig. 2b). In a rigid sense, after the membrane potential exceeds the instantaneous threshold, external current ensured persistent increase in the difference between the membrane potential and the instantaneous thresholds determine the AP. To predict the generation of an AP, it is important to know both the subsequent stimulus and the present state of the neuron. Dynamic threshold curve in two-dimensional models As a one-dimensional system, the QIF model has a threshold value that varies with an external stimulus. In the similar 2-dimensional Izhikevich model, the threshold expand to a curve 34. The threshold curves in a 2-dimensional model have been demonstrated in many dynamic systems, such as the FitzHugh-Nagumo (FHN) model 28,34,44, the reduced 2-dimensional HH model 44, the Morris-Lecar (ML) model 28,36, etc. 28 However, the quantitative form of the separatrix cannot be precisely determined in these models. Here, we show the analytic separatrix in a bi-dimensional model with piecewise linear nullclines and explain in detail the threshold phenomena that are determined by the separatrix-crossing mechanism for voltage clamping and other stimuli. We also deduce the first-order differential equation that describes the threshold dynamical variation versus time. This 2D-PWL model is analytically solvable and can be regarded as a modified FHN model. 5/24

6 a 1 v or θ b i e t t Figure 2. Stimulus determined threshold point in Quadratic Integrate-and-Fire model. (a) After a ramp current, AP cannot be induced witout stmulation (blue solid line), while a subthreshold constant current which lower the threshold can inspire an AP (red solid line). The different behaviour can be predicted by the threshold lines corresponding dashed lines. Red lines elucidate the situation with subthreshold current I e = 5. The black dash-dotted line shows the threshold current. (b) Rectangular pulse induced AP (blue solid line) can be prolonged (red solid line) or prevent (green solid line) by hyperpolarized current injection. Whether the membrane potential exceed corresponding threshold predict well whether the neuron will fire after the stimulus switching. As shown in Fig. 3, the real separatrix is a straight line that is precisely determined by the intersecting point (saddle) of the middle segment of v-nullcline and w-nullcline. The real separatrix is the stable manifold of this saddle in the right region of the state plane, while the other two local separatrices are quasi-separatrices: the hyperpolarized separatrix is a trajectory that is connected to the real separatrix, and the separatrix in the high-voltage region is the curve dv/ =. The real separatrix of our 2D-PWL model is a straight line in the v w state plane θ(w,i e )= 1 ( w k ) θ k w (i e + b m ), (8) k θ k m k w where k θ, k w, k m and b m are parameters (see Section Methods). The threshold is linearly related with the recovery variable w. Since k θ > k m > k w (see Section Methods), we can infer that the threshold decreases as the strength of the depolarizing current increase. The i e increment linearly move the separatrix (a straight line) up in the v w plane. Therefore, an external current linearly changes the thresholds. In the following paragraphs of this subsection, we will demonstrate separatrix-crossing determined threshold parameters and threshold voltage variation after voltage clamping, step current and ramp current injections. We first demonstrate the separatrix-crossing mechanism of threshold variation after voltage clamp (θ(w, )) in the state plane of our 2D-PWL model in Fig. 3. For a clear demonstration, we only use two different trajectories that originates from the state points 1 and 2 in the phase plane with the former (blue solid line) on the non-firing zone and the latter (green solid line) on the other side of the separatrix (red broad dash-dotted line) representing firing zone. From Fig. 3, we observe the threshold phenomenon in rapid voltage shift from resting potential: the instantaneous voltage shift from state 1 to state 2 (from state 5 to state 6) horizontally across the separatrix from the resting zone to the firing region and thus an AP fire. While the continuous voltage holding vertically evolves and then crosses the separatrix in the state plane, thereby determining another threshold phenomenon: the threshold timing of voltage clamp at a fixed voltage. For example, if a depolarized voltage is held at 15mV and the holding time is lengthened, the neuron will pass through state point 7 to state point 8, which prevent AP generation. Inversely, if a hyperpolarized voltage is held at 15mV, an increased time of clamping will cause an AP generation (state 4) while a shorter clamping will not (state 3). The long voltage clamping at hyperpolarized potential facilitates AP generation. Therefore, the wandering of quasi-separatrix around the resting state in the hyperpolarized region results in post-inhibitory facilitation. As shown in Fig. 4, the threshold voltages and timing that are determined by separatrix-crossing is clearly exhibited by the maximum depolarizing voltages after voltage clamps with clamped voltage v c and clamping duration τ c. Comparing two 6/24

7 1 Recovery variable, w 5 5 x x x Membrane potential, v Figure 3. Separatrices and separatrix-crossing mechanism after voltage clamp in state plane of 2D-PWL model. Blue and cyan dashed straight-lines are the v-nullcline and w-nullcline respectively. Black dots and circle are three fixed points; the left one (stable spiral, black dot) is real, while the middle one (stable spiral, black dot) and the right one (saddle, black circle) are virtual. Red wide dash-dotted curves are the global separatrices, the right straight one in the middle region is a real separatrix (stable manifold) of the saddle while the left winding one is a quasi-separatrix which is a trajectory connected with the real separatrix. Blue and green solid lines are real trajectories. Black lines show voltage clamp process, the dashed one demonstrate the ideal instantaneous voltage shift and the solid one with arrow marking the time evolution show the voltage holding after the sudden shift. Initialized at state points 1,3,5 or 7, the neuron will follow the blue trajectory and have a small peak which is considering as sub-threshold fluctuation; initialized at the state points 2, 4, 6 or 8 (on the other side of separatrix firing region), the peak of membrane potential will be large, and are considered as an AP. The difference of 1 and 2 (5 and 6) is whether the sudden shift of membrane potential cross the separatrix, while the difference of 3 and 4 (7 and 8) is whether the continuous voltage holding cross the separatrix. subfigures in Fig. 4, we find that a long voltage holding at a depolarized potential hampers AP generation. Conversely, a long voltage holding at a hyperpolarized potential facilitates AP generation. This phenomenon is caused by sepratrix-crossing from the firing zone to the subthreshold zone during depolarized voltage holding and vice versa during hyperpolarized voltage holding, as demonstrated in Fig. 3 (from state 8 to state 7 and from state 4 to state 3, respectively). The border that is indicated by the color in the low voltage region (v < 25mV) in Fig. 4a represents normally mentioned threshold voltage and correctly fits the curve v c = θ(v c,τ c ) which is a quasi-separatrix in the τ c v c phase plane. The border in the high voltage region corresponds to the line dv/ =. Additionally, in Fig. 4b, the quasi-separatrix in the hyperpolarized voltage region (left region in phase space) precisely limits the domain of the firing region of the numerical results. Similar to voltage clamping, a current injection such as rectangular and ramp current pulse will push the state across the separatrix if the pulse duration is long enough (see Supplementary Fig. S1). The threshold pulse strengths and durations, which are determined by real separatrices in the v w phase plane, may form quasi-separatrices in the parameter plane. According to eq.(4) and (8), we can deduce the first order threshold equation τ w dθ = θ (w,i e ) θ τ w(k θ k w ) di e k θ (k m k w ). (9) If di e / =, i.e. i e (t) I e, our 2D-PWL model satisfy the conditions of equation (5), we get the same threshold equation in 7/24

8 Figure 4. Maximum voltages indicate threshold clamping voltages and times in the 2D-PWL model. Numerical results (colored patches) well fit the analytic results (colored lines). (a) Maximum voltages after depolarized voltage clamp. For a fixed clamping voltage v c, threshold clamping duration (τ c ) in low voltage region (analytic results are showed by magenta dash-dotted line) indicate long depolarized voltage suppress AP firing, while threshold clamping time for a high voltage well fit the curve dv/ = (yellow lines) which means longer clamping potential time-series is lack of the depolarizing phase of AP. (b) Maximum voltages of hyperpolarized voltage clamping. For a constant voltage, inverse with the depolarized situation, a short voltage clamping cannot induce an AP while a longer enough one can. The threshold voltage for a fixed clamping time is a monotonic increasing function of clamping duration. Ref. 8 and 17. Our PWL model is more like a type III neuron according to Hodgkin s classification, as it can not fire periodic AP. However, if we set the slope of w-nullcline larger than the middle segment of v-nullcline, the PWL model is turned into an interesting type of neuron, which have type II f -I curve and type I threshold phenomenon, e.g. fixed-point threshold phenomenon. Our PWL model is lack of fold point (v-nullcline where has dw/dv=) between the middle segment and right segment of v-nullcline, which cause the missing of canard threshold phenomenon. However, both the Boltzmann-FHN model and the classic FHN model have canard threshold phenomena (see Fig.??), and so it is with type I, II and III ML models 36. Threshold plane in a three-dimensional PWL model Here, we extend the two-dimensional PWL model to a three-dimensional model, which provides a good example for threedimensional phase space analysis of threshold phenomena. As shown in Fig. 5, a plane of threshold states that separate the 3-dimensional space into two parts defines the firing or non-firing region in the middle region. The separatrix in this 3D-PWL model is a real separatrix that is actually a plane determined by the stable and unstable eigenvectors. For dynamic analysis, see Supplementary Note S1 and Supplementary Fig. S2. The separatrix, i.e., a threshold plane in the middle region is θ(u,w,i e )= au bw+ (1+ak u+bk w ) k u + k w k m (b m + i e ), (1) where a, b, k u, k w and k m are parameters (see Methods section). So the threshold variation equation versus time can be obtained as dθ = a k uv u τ u b k wv w + 1+ak u+bk w di e τ w k u + k w k m. (11) The two character time constants, τ u and τ w, prevent the simplification of equation (11) into equation (1) if the difference of τ u and τ w is neither very large nor very small. Threshold variation phenomena of post-stimulus, such as voltage clamp, step current or ramp current, are also determined by separatrix-crossing in the 3D-PWL model. Additionally, it is a natural extrapolation that similar higher dimensiona PWL models may have separatrices in the form of hyperplane. 8/24

9 Figure 5. Separatrix determine threshold voltages in three-dimensional PWL model. Trajectories 1, 3 and 5 (blue, red and magenta lines) behind the threshold plane and trajectories 2, 4 and 6 (green, cyan and yellow lines) before the threshold plane have small difference of initial values, however, they have great behaviour difference sub-threshold fluctuation or firing. The gray transparent plane, which divide the space into subthreshold and suprathreshold region, is a separatrix determined by stable (red arrow) and unstable (blue arrow) eigenvectors of a equilibrium (blue point). Threshold hypersurface in the HH model We numerically demonstrate the separatrix-crossing mechanism in the classic HH model after voltage clamps in Fig. 6. The maximum depolarizing voltage V max (indicated by color) after a voltage clamp under the corresponding V c (clamped voltage) and τ c (clamping duration) is mapped on the voltage clamping surface. The clear boundary of the maximum voltage is a numerical approximation of the separatrix, which shows distinct characteristics in subthreshold and firing regions. The similar separatrices can be numerically plotted in other 3D state spaces (such as the m-h-n space, see Supplementary Fig. S3). The separatrix line in the voltage-clamp surface is part of a high-dimensional separatrix that intersects by the voltage clamping surface. Voltage clamp transient processes at several different potentials are displayed as yellow solid curves with the potential marked at the end (V c -lines) in Fig. 6, while the green dashed lines with time marks (τ c -lines) show the voltage clamping duration. The red dash-dotted line indicates the asymptotic value as time approaches infinity under different clamp voltages (m (V) and h (V)). As V c -lines indicate, when the voltage is clamped at a certain value, an immediate release causes the system to remain in the firing zone, allowing for an AP to be elicited. Conversely, if holding at a voltage for a long time, the system will cross the separatrix into the subthreshold zone, and APs cannot be generated. Like the PWL models, whether the HH neuron will fire after voltage clamping is determined by whether the clamped voltage (V c ) exceed the instantaneous threshold, θ. We numerically show the scenarios of threshold variation during several voltage clampings with varying clamped voltages and clamping durations in Supporting Information (Supplementary Fig. S4). It is the intersecting points of V c and θ that form the clear threshold border in the low voltage region of Fig. 7, i.e. V c = θ(v c,τ c,i e = ) as m, h and n is the function of V c and τ c according to equation (29)). The similarity of maximum voltages versus clamping voltages and durations in 2D-PWL model and HH model indicate similar sepratrix-crossing mechanism, but 9/24

10 Figure 6. The separatrix-crossing mechanism of HH model after voltage clamp in v m h state space. Colors on voltage clamping surface indicate maximum voltages after voltage clamping. The clear boundary of blue and other colors is the numerical approximation of separatrix on voltage clamping surface in V -m-h phase space. The red dash-dotted line shows the asymptote when voltage clamping time is infinity. Yellow solid lines show voltage clamp processes at several voltages (V c -lines) and the green dashed lines indicate same duration after voltage clamp τ c -lines, they are all marked with a number show corresponding values at the end. The separatrix in V-m-h space is part of global separatrix in four dimensional phase space and divide the voltage clamping surface into firing and no firing region. A V c -line shows that the state of the neuron continuously changes, crosses the separatrix and comes into the no firing region as clamping time τ c increase. the difference in detail indicate the complex interaction of different gating of ion channels in HH model (Supplementary Fig. S5). According to the general equations (4) and (29), the instantaneous threshold voltage variation in the HH model following a voltage clamp (θ(v c,τ c,i e = )) is determined by dθ(m,h,n) θ 1 = x x τ x (V c ) (x (V c ) x )e t τx(vc) (x=m,h,n) (12) From above equation, we observe that in principle, all channels and their subunits have effects on the threshold variations since that they are all coupled by membrane potential; however, the significances are determined by weights of both the time constant τ x (V c ) and θ/ x. Additionally, if the external stimulus is not a voltage clamp, e.g. ramp current, the time constant τ x (V) for each gating variable also varies with membrane potential, therefor the temporal evolution of post-stimulus threshold is more complex. 1/24

11 Figure 7. Maximum voltages of HH neuron indicate threshold clamping voltages and times. (a) Maximum voltages after depolarized voltage clamp. For a fixed clamping voltage V c, as clamping duration τ c increasing, the peak of action potential decrease. Then long enough voltage holding inhibit AP generation after voltage clamping. Border in the low threshold displays the normal threshold and border in the high voltage region determined by dv/ = (see Supplementary Fig. S5). (b) Maximum voltages of hyperpolarized voltage clamp. For a constant voltage, inverse with the depolarized situation, the short time clampings cannot induce an AP while the long enough ones can. Different from depolarized situation, the threshold voltages for a fixed clamping time is a monotonic increasing function. Discussion Highly variable spiking thresholds are observed both in vitro 5,8,9 and in vivo 1 6. The researches that concern the threshold variation of neural spikes have three distinct characteristics. First, as the threshold is stimulus dependent, most researchers use threshold after the stimulus is off 8,23,27. Here we show that the separatrix-crossing mechanism is universal for the poststimulus threshold phenomena. Second, since the threshold is not a single value, several studies have extended the threshold point to a threshold curve 27,28. In fact, the separatrix concept has been proposed since the 5 s in the last century 25,44, and recently similar hypotheses for general threshold also have been reintroduced In this paper we demonstrate that different type of separatrix generally exist in excitable neuron models and systematically show separatrix-crossing mechanism determined threshold phenomena in example models, especially the 1-, 2- and 3-dimensional models with analytic separatrix. We also found that the singular-point threshold and canard threshold phenomena coexist in type I neuron which are only condidered having singular-point threshld phenomena in previous. Third, people try to simplify the threshold problem and construct quantitative threshold equations 8,15,16,28. Much effort has been made to incorporate dynamic thresholds into the IF model 37. Additionally, recently people try to simplify the threshold variation to a threshold equation Here, we deduced a detailed threshold evolving equation versus time which can be simplified to the previously assumed eqution 5,8,14 17 for the simplest case. Our results indicate that the threshold is influenced by all ion channels in principle, which is consistent with traditional biophysical explanations for spiking threshold variation. It has been proposed that all ion channel adaptations, such as sodium channel inactivation and potassium channel activation 18, will change the spiking threshold. This view has also been verified by recent experimental and theoretical works 8,15,16,23. However, in sepratrix-crossing mechanism, the significance of each gating variable of ion channels depends on the sepcific function of separatrix (θ(x,i e (t))), and can also be implicitly observed from θ/ x and τ x (v) in the threshold evolving equation (4). Separatrix-crossing mechanism are also consistent with electrophysiologic observations for spiking threshold variation. It was observed that the threshold voltages show positive correlation with the membrane potential (V) and negative correlation with the rising rate of membrane potential (dv/) before the spike 1,2. The mean subthreshold membrane potential of a neuron in vivo depends on the strength of background synaptic inputs and corresponds to the resting potential that is determined by parameters and external currents in a deterministic model. The separatrix is directly related with external current, therefore the threshold is related with resting membrane potential. However, the specific relation of threshold and resting potential depends on the specific function of a separatrix. In the QIF model and the classic FHN model, which have the saddlenode bifurcation as external current increase, the depolarizing current elevate the resting potential and lower the thresholds; however, in the classic HH model, which have the Andronov-Hopf bifurcation as external current increase, the thresholds do 11/24

12 increase with the resting membrane potential before a voltage clamping (Supplementary Fig. S6). The relation of the threshold and the rising rate of membrane potential is more obvious to observe. Demonstrated in Fig. S1, in the 2D-PWL model, a stronger current with a larger dv/ produces more hyperpolarized threshold for both depolarized and hyperpolarized current injection. Explicitly seen in Fig. S1, the stronger the current cause more horizontal trajectory, the limit is only shifting the membrane potential and holding the recovery variable. The corresponding biophysical picture is the stronger current charge the membrane more rapid and cause less adaptation of recovery variable compared with a weaker current does. Threshold variability and the rapidity of onset of AP have inspired a recent debate 3,4,9,29 32 concerning whether they can be satisfied at the same time by classic HH model 9,3. Two explanations that try to reconcile the two conflicting facts concern with more than one compartment 3,33. In a multi-compartment model, the thresholds of each compartment are also affected by the neighbor s states, such as the lateral current 3 and the relative size of soma and axon 33. Evidence from experimental, theoretical and numerical simulations show that the morphology and distribution of ion channels can affect the thresholds of a neuron, especially the axon initial segment, which has very high sodium channel density 9,3,45. How will the separatrices of compartments determines the threshold of the neuron? Our simple PWL models with precise thresholds provide applicable models that are suitable for this future exploration. In a summary, we proposed that the separatrix generally exist in excitable neurons and determine threshold voltages, threshold voltages variation and post-stimulus threshold parameters for AP generation. We brought forward that threshold phenomena can be classified as two general types with different mechanisms: parameter threshold described by bifurcation theory and state threshold explained by sepratrix-crossing. The separatrix-crossing mechanism also determine the timingrelated parameter threshold. We also deduced the threshold variation equation versus time naturally and transformed it into the simple form used by previous researchers 5,8,14 17 for a simpler case. Separatrix and separatrix-crossing-determined threshold phenomena were demonstrated and verified in example models. The separatrix-crossing mechanism and models we proposed will benefit further investigation of threshold variability on other factors, such as morphology, passive membrane properties and spatial distribution of ion channels of neurons. Methods Classic FHN model and Boltzmann-FHN model The classic FHN model is described by differential equations: dv dw = v v3 3 w+i e(t) = av+b w τ w where v represents membrane potential, w is a recovery variable and i e (t) is time-varying injected external current. To demonstrate of canard threshold phenomenon well, we let τ w = 15, a=1.25, b=.875 and i e (t). The neuron belongs to type II neuron. Similar to ML-FHN neuron model used in Ref. 4, we modified the equation of recovery variable w to: dw = 1 ( ) a τ w 1+exp( b(v c)) w (13) (14). (15) As the nullcline of w is a Boltzmann function, we call it as Boltzmann-FHN model. To show three separatrices determined by saddle and canard phenomenon well, we take τ w = 8, a=2, b=3, c=.27 and i e (t).62. The model is a type I neuron. Two-dimensional piecewise linear model The piecewise linear model is named for its piecewise linear nullclines in the phase space. The general form of the model we used in this paper is: C dv dw = f(v) w+i e (t), = (k w v w)/τ w, where f(v) is a piecewise linear function of v (membrane potential), w represents the recovery current, C is the membrane capacitance, τ w = 5 is the time constant of w, and k w =.45 is a coefficient. As a model demonstrate threshold phenomena in principle, the equations is dimensionless, so do the equations of 3D-PWL model. (16) (17) 12/24

13 We take f(v) as a piecewise linear function: k l v+b l, v v l, f(v)= k m v+b m, s l < v v r, k r v+b r, v>v r, (18) Slope rates of left, middle and right segments are represented as k l =.5, k m =.5, and k r =.25, respectively, whereas the intercepts are b l =, b m = 1.5 and b r = 17.25, and the parameters that separate the definition scales are v l = 1.5 and v r = 25.. According the derivation in Supplementary Note S1, the threshold voltages is: θ = 1 k θ (w b θ ), (19) and the corresponding quasi-separatrix in the plane of clamped voltage versus clamping time (τ c -v c ): θ(τ c )= w e τc τw b θ (1 e τc τw)k k θ. (2) Three-dimensional piecewise linear model We extended the two-dimensional piecewise linear model to three dimensional to show the separatrix in the three dimensional phase space: C dv du dw = f(v) u w+i e (t), = (k u v u)/τ u, = (k w v w)/τ w, where f(v) is a piecewise linear function of membrane potential v, f(v) has the same form as in formula (18), u and w are the recovery variables, τ u (τ w ) is the time constant of u (w), and k u > (k w > ) is a coefficient. Parameters of f(v) are the same as in the 2D-PWL model, with the exception of k m =.95, b m = 2.175, b r = , and s r = 5.. The slope rates are k u =.45 and k w =.6. Time constants are τ u = 5. and τ w = 1.. See the derivation in Supplementary Note S2, the explicit equation of the threshold can be written as: θ = au bw+ 1+ak u+bk w k u + k w k m (b m + i e ), (24) τ where a = u τ w r i +r j +τ u (C k m τ w ) and b = r i(r j +τ u C)+τ u (r)h+τ u (C k w τ w )) with r k w τ u C(r i +r j τ u (C k m τ w )) i and r j being the roots of Supplementary equation (S3). Although two threshold planes exist, only the plane shown in Supplementary Fig. S2 is located properly to serve as the threshold for this 3-dimensional PWL neuron. Classic Hodgkin-Huxley model The equations of the classic HH model are 19 c m dv dm dh dn = ḡ Na m 3 h(v E Na ) ḡ K n 4 (V E K ) ḡ L (V E L )+i e (t), (25) = (m (V) m)/τ m (V), = (h (V) h)/τ h (V), = (n (V) n)/τ n (V), where τ x (V)=1/(α x (V)+β x (V)) (x represents m, h or n in the following equations and paragraphs) is the time constant of x, and x (V)=α x (V)/(α x (V)+β x (V)) is the asymptotic value of x when time approaches+. The rate functions α x and β x (21) (22) (23) (26) (27) (28) 13/24

14 are: 25 V α m =.1, β e (25 V)/1 1 m = 4.e 18 V ; 1 V α n =.1, β e (1 V)/1 1 n =.125e 8 V ; α h =.7e V 2, β h = 1 e 3 V Reversal potentials are E Na = 5mV, E K = 77mV and E L = 54.4mV. The neuronal membrane potential is clamped to the set voltage by an ideal voltage-clamp protocol. Briefly, the voltage is set to be the clamped voltage while the other equations are allowed to evolve. By setting V to be constant in equations (26) (28), we obtain: x(v c,t,x )=x (V c )+(x x (V c ))e t τx(vc). (29) This equation describes the asymptotic transient process of gating variable x when the neuron is clamped to the voltage V c. Thus, we analytically calculated channel states x(v c,τ c ) for the initial states x. x(v c,τ c ) is the new initial values to determine whether the neuron will firing or not following voltage clamping. Both the resting states and the subsequent evolution after voltage clamping were numerically calculated using the 4th-order Runge-Kutta method. The resting states were saved after 2ms of running the model without any stimulation. After the voltage clamp, we did not provide other stimulations, thereby making the HH model an autonomous system again. References 1. Azouz, R. & Gray, C. M. Dynamic spike threshold reveals a mechanism for synaptic coincidence detection in cortical neurons in vivo. PNAS 97, (2). 2. Azouz, R. & Gray, C. M. Adaptive coincidence detection and dynamic gain control in visual cortical neurons in vivo. Neuron 37, (23). 3. Naundorf, B., Wolf, F. & Volgushev, M. Unique features of action potential initiation in cortical neurons. Nature 44, (26). 4. Muñoz, F. & Fuentealba, P. Dynamics of action potential initiation in the GABAergic thalamic reticular nucleus in vivo. PLoS ONE 7, e3154 (212). 5. Farries, M. A., Kita, H. & Wilson, C. J. Dynamic spike threshold and zero membrane slope conductance shape the response of subthalamic neurons to cortical input. J. Neurosci. 3, (21). 6. Howard, M. A. & Rubel, E. W. Dynamic spike thresholds during synaptic integration preserve and enhance temporal response properties in the avian cochlear nucleus. J. Neurosci. 3, (21). 7. Wilent, W. B. & Contreras, D. Stimulus-dependent changes in spike threshold enhance feature selectivity in rat barrel cortex neurons. J. Neurosci. 25, (25). 8. Higgs, M. H. & Spain, W. J. Kv1 channels control spike threshold dynamics and spike timing in cortical pyramidal neurones. J. Physiol. (Lond.) 589, (211). 9. McCormick, D. A., Shu, Y. & Yu, Y. Neurophysiology: Hodgkin and huxley model still standing? Nature 445, E1-E2; discussion E2-E3 (27). 1. Wallach, A. & Marom, S. Interactions between network synchrony and the dynamics of neuronal threshold. J. Neurophysiol. 17, (212). 11. Kuba, H., Ishii, T. M. & Ohmori, H. Axonal site of spike initiation enhances auditory coincidence detection. Nature 444, (26). 12. Kuba, H. & Ohmori, H. Roles of axonal sodium channels in precise auditory time coding at nucleus magnocellularis of the chick. J. Physiol. 587, 87-1 (29). 13. Yi, G. -S., Wang, J., Tsang, K. -M., Wei, X. -L. & Deng, B. Input-output relation and energy efficiency in the neuron with different spike threshold dynamics. Front. Comput. Neurosci. 9 (215). 14. Hill, A. V. Excitation and accommodation in nerve. Proc. R. Soc. Lond., Ser. B, Biol. Sci. 119, (1936). 15. Platkiewicz, J. & Brette, R. A threshold equation for action potential initiation. PLoS Comput. Biol. 6, e185 (21). 14/24

15 16. Platkiewicz, J. & Brette, R. Impact of fast sodium channel inactivation on spike threshold dynamics and synaptic integration. PLoS Comput. Biol. 7, e11129 (211). 17. Fontaine, B., Peña, J. L. & Brette, R. Spike-threshold adaptation predicted by membrane potential dynamics in vivo. PLoS Comput Biol. 1, e1356 (214). 18. Hodgkin, A. L., Huxley, A. F. & Katz, B. Measurement of current-voltage relations in the membrane of the giant axon of loligo. J. Physiol. 116, (1952). 19. Hodgkin, A. L. & Huxley, A. F. A quantitative description of membrane current and its application to conduction and excitation in nerve. J. Physiol. 117, (1952). 2. Azouz, R. & Gray, C. M. Cellular mechanisms contributing to response variability of cortical neurons in vivo. J. Neurosci. 19, (1999). 21. Gutierrez, C., Cox, C. L., Rinzel, J. & Sherman, S. M. Dynamics of low-threshold spike activation in relay neurons of the cat lateral geniculate nucleus. J. Neurosci. 21, (21). 22. Harrison, P. M., Wall, M. J. & Richardson, M. J. Slow sodium-channel inactivation underlies spike threshold variability. BMC Neurosci. 14(Suppl 1):P322 (213). 23. Wester, J. & Contreras, D. Biophysical mechanism of spike threshold dependence on the rate of rise of the membrane potential by sodium channel inactivation or subthreshold axonal potassium current. J. Comput. Neurosci. 35, 1-17 (213). 24. Yi, G.-S., Wang, J., Tsang, K.-M., Wei, X.-L. & Deng, B. Biophysical insights into how spike threshold depends on the rate of membrane potential depolarization in type I and type II neurons. PLoS ONE 1, e1325 (215). 25. FitzHugh, R. Mathematical models of threshold phenomena in the nerve membrane. Bull. Math. Biophys. 17, (1955). 26. Guckenheimer, J. & Oliva, R. A. Chaos in the hodgkin-huxley model. SIAM J. Appl. Dyn. Syst. 1, (22). 27. Erdmann, C. Investigation of threshold in neural systems. Ph.D. Thesis, Freie Universitität Berlin (211). 28. Tonnelier, A. Threshold curve for the excitability of bidimensional spiking neurons. Phys. Rev. E 9, 2271 (214). 29. Volgushev, M. et al. Onset dynamics of action potentials in rat neocortical neurons and identified snail neurons: quantification of the difference. PLoS ONE 3, e1962 (28). 3. Yu, Y., Shu, Y. & McCormick, D. A. Cortical action potential backpropagation explains spike threshold variability and rapid-onset kinetics. J. Neurosci. 28, (28). 31. Colwell, L. J. & Brenner, M. P. Action potential initiation in the hodgkin-huxley model. PLoS Comput. Biol. 5, 1265 (29). 32. Baranauskas, G., Mukovskiy, A., Wolf, F. & Volgushev, M. The determinants of the onset dynamics of action potentials in a computational model. Neuroscience 167, (21). 33. Brette, R. What is the most realistic single-compartment model of spike initiation? PLoS Comput. Biol. 11, e14114 (215). 34. Izhikevich, E. M. in Dynamical systems in neuroscience: The Geometry of Excitability and Bursting (The MIT press, 27). 35. Sekerli, M., Del Negro, C. A., Lee, R. H. & Butera, R. J. Estimating action potential thresholds from neuronal time-series: new metrics and evaluation of methodologies. IEEE Trans. Biomed. Eng. 51, (24). 36. Prescott, S. A., De Koninck, Y. & Sejnowski, T. J. Biophysical basis for three distinct dynamical mechanisms of action potential initiation. PLoS Comput. Biol. 4, e1198 (28). 37. Gerstner, W. & Kistler, W. M. Spiking neuron models: Single neurons, populations, plasticity (Cambridge university press, 22). 38. Izhikevich E M. Neural excitability, spiking and bursting. Int. J. Bifurcat. Chaos 1, , (2). 39. Mitry, J., McCarthy, M., Kopell, N. & Wechselberger, M. Excitable neurons, firing threshold manifolds and canards. J. Math. Neurosci. 3, 12 (213). 4. Wechselberger, M., Mitry, J. & Rinzel, J. Canard theory and excitability. In Nonautonomous dynamical systems in the life sciences (eds P. E. Kloeden and C. Pötzsche ) (Springer, 213). 41. Desroches, M., Krupa, M. & Rodrigues, S. Inflection, canards and excitability threshold in neuronal models. J. Math. biol. 67, (213). 15/24

16 42. Chizhov, A. V., Smirnova, E. Y., Kim, K. K. & Zaitsev, A. V. A simple markov model of sodium channels with a dynamic threshold. J. Comput. Neurosci. 37, (214). 43. Gerstner, W. & Naud, R. How good are neuron models? Science 326, (29). 44. FitzHugh, R. Impulses and physiological states in theoretical models of nerve membrane. Biophys. J. 1, (1961). 45. Wang, L., Wang, H., Yu, L. & Chen, Y. Role of axonal sodium-channel band in neuronal excitability. Phys. Rev. E 84, 5291 (211). Acknowledgements (not compulsory) This work was supported by the National Natural Science Foundation of China (Grants No , , ). We also thank Tianxu Huo for the discussion of 3D-PWL model and Yuelin Chen for the discussion of threshold equation. Author contributions statement Conceived and designed the experiments: LFW, YC, LCY. Performed the experiments: LFW, HTW. Analyzed the data: LFW, YC, HTW, LCY. Wrote the paper: LFW, YC. All authors reviewed the manuscript. Additional information Competing financial interests: The authors declare no competing financial interests. 16/24

17 Supplementary Information a 15 b w 5 I=-1. I= I= 1.12 I= 2. I= v 5 k r =-.5 k r =-.5 k r =.2 k r =.5 k r = v Figure S1. Threshold of step and ramp pulse determined by separatrix in 2D-PWL model. (a) Trajectories (solid lines and dash-dotted lines) of step current injections with different amplitudes to the PWL model. Whether the change after a rectangular pulse injection can induce an AP is determined by whether the state have crossed the separatrix (red dash-dotted line). In this model, a minimum threshold amplitude (I thr ) must be exceed to have an transient AP 34,4. (b) Trajectories of ramp current injection with different rate to PWL model. Whether AP will generate after the ramp current also determined by separatrix-crossing mechanism. The pluses duration of every solid line and the corresponding dash-dotted line with the same color differ.6. 17/24

18 Figure S2. Dynamic analysis of 3D-PWL model. Any pair equations of our 3D-PWL model define a nullcline in state space (black solid lines). Three nullclines intersect with each other in real or by elongating at three fixed points, however, only the one representing the resting potential is actually exists, the other two are virtual, i.e. not locate in their definition zone. The sepratrix separate the 3-dimensional space into two parts which defines the firing or non-firing region in the middle region. Arrows show the characteristic vectors, the red one is the one with negative characteristic eigenvalue. 18/24

19 Figure S3. Separatrix-crossing mechanism of HH model in m-h-n state space. The boundary of maximum voltages after voltage clamp mapped on voltage clamp surface in m h n state space numerically show the separatrix of HH model. Colors indicate different maximum voltages after voltage clamp. Yellow solid lines show voltage clamping processes at several voltages and the green dashed lines indicate same duration of voltage clamping, they are all marked with values at the end of the lines. On the separtrix, the instantaneous threshold (θ) equal to clamping voltage V c. In the firing zone (hot colored region), we have V c > θ and in the blue region V c < θ when voltage clamping is off. 19/24