arxiv: v2 [cond-mat.mtrl-sci] 4 Dec 2014

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1 Topological phase transitions in half-hydrogenated honeycomb monolayers Cheng-Cheng Liu, Jin-Jian Zhou,, and Yugui Yao, School of Physics, Beijing Institute of Technology, Beijing 8, China Institute of Physics, Chinese cademy of Sciences, Beijing 9, China Based on first-principles calculations, we find novel valley-polarized quantum anomalous Hall (VP- QH) phases and tunable topological phase transitions driven by the spontaneous magnetization within a half-hydrogenated honeycomb monolayer. Depending on the magnetization orientation, four different phases can emerge, i.e., two kinds of VP-QH phases, ferromagnetic insulating and metallic states. Significantly, when the magnetization is reversed from the +z to -z directions, accompanying with a sign change in the Chern number (from - to +), the chiral edge state is moved from valley to. Our findings provide a platform for designing dissipationless electronics and valleytronics in a more robust manner through the tuning of the magnetization orientation. PCS numbers: f, 73..-f, 7.7.Ej, 8.7.-d arxiv:4.3v [cond-mat.mtrl-sci] 4 Dec 4 Recently, there has been broad interest in the condensed matter physics community in the search for novel topological phases, as well as the tuning and understanding of the related phase transitions, aiming for both scientific explorations and potential applications [, ]. mong these novel topological phases is the quantum anomalous Hall (QH) phase [3 7], which is characterized by a finite Chern number and chiral edge states in the bulk band gap, and maintain robust stability against disorder and other perturbations [8]. lthough the first proposal appeared over twenty years ago, there were not few instances of experimental evidence for QH phase within Cr-doped (, Sb) T e 3 at extremely low temperatures reported until recently [9, ]. Some strategies to achieve QH effects at high temperatures in honeycomb materials are proposed [ ], such as by transitionatoms adaption [7,, 3], magnetic substrate proximity effect [4, ], and surface functionalization [9, ]. In honeycomb lattices, and valleys similar to real spin, provide another tunable binary degrees of freedom to design valleytronics. By breaking the inversion symmetry, a bulk band gap can be opened to host a quantum valley Hall (QVH) effect, which is classified by a valley Chern number C v = C C [ 4]. For technological applications, it is important to find a novel topological state that simultaneously shares the properties of both QH states and QVH states, i.e. valley-polarized QH (VP- QH) phases, on the one hand, and learn how to drive transitions among different phases, on the other. The element bismuth has the largest SOC strength in the periodic table of elements except radioactive elements. The above exotic topological quantum phases can be expected to emerge notably in the -based materials. ctually, the star materials for three-dimensional (3D) TI are no other than the -based materials Se 3, T e 3, and Sb T e 3 []. -based material Cu x Se 3 is predicted as 3D time-reversal-invariant topological superconductor [6]. The honeycomb monolayer film is two-dimensional (D) TI with. ev SOC gap at point [7]. fully-hydrogenated (F-H) or halogenated honeycomb monolayer is predicted a D TI with a record bulk band gap (> ev) at and points [8, 9]. For electron doping, the D TI F-H monolayer is predicted to host time-reversal-invariant p ± ip topological superconductivity [3]. In this Letter, we report the theoretical finding of two novel kinds of VP-QH topological phases with a gap of about 4 mev, and associated topological phase transitions caused by the magnetization orientation in a halfhydrogenated (H-H) honeycomb monolayer. Other phases, shown in Fig., such as ferromagnetic (F)- etal and F-Insulator phases, are found in several regions with different magnetization orientations. The magnetization orientation can be tuned via an external magnetic field or proximity induction by different magnetic substrates. Furthermore, these common experimental measures can be used to control the topological phase transitions in such a H-H monolayer. Therefore, our findings provide an ideal platform for the design of dissipationless electronics and valleytronics in a robust and controllable manner. First-principles (FP) calculations are performed using the projector augmented wave method implemented in the Vienna ab initio simulation package (VSP) [3]. Perdew-Burke-Ernzerhof parametrization of the generalized gradient approximation (GG-PBE) is used for the exchange correlation potential [3]. The plane wave energy cutoff is set to 3 ev, and the Brillouin zone is sampled by a 4 4 mesh. The maximally localized Wannier functions are constructed by using the Wannier9 code [33]. Based on the constructed Wannier functions, we use an iterative method [34] to obtain the surface Green s function of the semi-infinite system, from which we can calculate the dispersion of the edge states. Figure plots the typical geometries for a F-H monolayer, with three-fold rotation symmetry and inversion symmetry, like for graphane. The H-H monolayer with a quasi-planar geometry can be obtained by removing half of the hydrogenation of the F-H monolayer [8, 9]. Its three-fold rotation symmetry remains

2 Half-hydrogenated Full-hydrogenated +z H B (c) w/o spin-polarized, w/o SOC (d) wtih spin-polarized, w/o SOC chiral edge states (e) wtih SOC VP-QH(//z) (f) F-Insulator( z) VP-QH(//-z) FP Wannier //z - FIG. : (color online). sketch of the predicted phase diagram as a function of the direction and magnitude of the magnetization in the H-H honeycomb monolayer. The angle θ is between the direction of the magnetization and z axis. VP-QH() corresponds to C = (C = ) and Cv = (Cv = ). The two cases can be related by time reversal operation. The red dash line is the phase transition path occurred in the H-H monolayer. schematic diagram for chiral interconnects in a homogeneous junction made of an atomically thin H-H monolayer. Via tuning the orientations of magnetization, there are three different regions, i.e. VP-QH, F insulator, and VP-QH, along whose borders two kinds of fully valley-polarized chiral edge states marked by valley and index can be used as dissipationless conducting wires for electronics and valleytronics. Ωz (atomic unit) chiral edge states ' - - //z - ' FIG. : (color online)., The respective lattice geometries for the F-H and H-H honeycomb monolayers. Large purple and small green spheres represent the and hydrogen atoms, respectively. and B in label the two sublattices. The red arrows in represent the magnetic moments. The black arrow marks the +z direction. (c) The projection band structures for the H-H monolayer. The size of the symbols is proportional to the weight of the band eigenfunctions on different atomic orbitals. (d) The spin-polarized band structure for the H-H monolayer. (e) The SOC band structure for the magnetization along z axis. The red circle (black line) is for the bands from the Wannier interpolation (FP). Both are in good agreement. (f) The Berry curvature distribution along the line with high symmetry for the summation of all the valence bands. but inversion symmetry broken, as shown in Fig., similar to graphone. Figures. (c-e) plot the band structures for three cases within the GG, spin-polarized and SOC calculations. s shown in Fig. (c), there is a flat band near the Fermi level from the orbital of the atoms disconnected from the H atoms, since these atoms constitute a triangular lattice with large bond length. For spin-polarized calculations [Fig. (d)], a magnetic moment of approximately µb per unit cell is induced with the spin-up band fully filled and the spin-down one almost empty. When spin-orbit coupling (SOC) is taken into account, the ground state in the HH monolayer is a ferromagnetic insulator with the magnetization lying in the basal plane (x-y). For the magnetization along +z axis, an SOC band gap of proximate 4 mev opens around the point, as shown in Fig. (e). Using the Wannier interpolation method [33], we can calculate the band structure and the Berry curvature. The Wannier band structure reproduces the FP one [Fig. (e)] well. From the Berry curvature distribution in Fig. (f), one can find an obvious dip around the valley and an imbalance between valley and, which indicates a nontrivial topological property of the bulk Bloch wave-functions. fter integration of the Berry curvature throughout the whole Brillouin zone as well as around each individual valley, we obtain the Chern number C = as well as C ' and C ', demonstrating its nontrivial topological features of simultaneously possessing both QH and QVH phases. This is further confirmed by the analysis of edge states, band evolution mechanism and spin texture, which will be dis

3 cussed later. In addition to the Chern number, the gapless edge mode inside the bulk energy gap provides a more intuitive picture to characterize the topological properties of the bulk. In Fig. 3, we plot the band structures with their orbital projected character and the corresponding edge states of zigzag semi-infinite systems for four different cases. For the F-H monolayer, the low-energy bands are dominated by the p x and p y orbitals of the atoms as shown in Fig. 3, and there are two helical edge states in the huge bulk gap of about ev [Fig. 3(e)], which indicates a QSH phase. For the H-H monolayer, the two relevant flat bands mainly consist of the p z orbital from the dehydrogenated-site atoms, which are located in the original large QSH gap of the F-H monolayer. oreover, the orientation of the magnetization dramatically changes the relativistic band structures, especially the two relevant bands straddling the Fermi level, as well as the size and the position of the gaps, as shown in Figs. 3(b-d). Three typical insulating phases emerge for different orientation alignments of the magnetization. From the edge states of the zigzag semi-infinite systems and the direct calculations of Chern number [Figs. 3(f-h)], we find the three typical insulating phases correspond to the VP-QH (C =,C v = ), ferromagnetic insulator, and VP-QH (C =,C v = ) states, respectively. In order to obtain a physical picture of the nontrivial topological properties of VP-QH, we investigate the band structure evolution and the spin texture as shown in Fig. 4. Without loss of generality, we analyze the case of the magnetization aligned along the +z axis. The evolution is divided into three stages, as schematically plotted in Figs. 4(a-c). We start with the F-H monolayer, whose low-energy band structure has a huge QSH band gap opened by on-site SOC [9]. Dehydrogenation from the sublattice leads to a flat band mainly consisting of the p z orbital from atoms of the -sublattice around the Fermi level in the otherwise huge QSH gap [Fig.(c)]. t the first stage of the band evolution, in Fig. 4, the magnetization splits the flat p z bands into two bands, p z and p z, where p z means that the bands consist of the p z orbitals of the -sublattice atoms. Considering the electron filling, the Fermi level is located slightly lower than the p z band. The intrinsic SOC plays a role in the second stage. From the pervious work [9], it is known the bands with total angular momentum J z {,} = ±/ and J z {,} = ±3/ constitute the lowenergy valence and conduction bands for QSH states in the F-H monolayer respectively, as shown in Fig. 4. The superscript {p x, p y } indicates the bands mainly come from the p x, p y orbitals. In the following, we will focus on the valence bands with J z {,} = ±/, in view of that the total angular momentum conservation is required in the presence of SOC and the two relevant flat p z bands likewise own J z {} = ±/. Specifically, around the valley, the valence bands consist of p + (J z = /) and p B (J z = /), while around the valley, the subscripts sublattice index and B are exchanged, where p ± = (p x ± ip y ) /. s shown in Fig. 4, the onsite (-sublattice) SOC brings about the level repulsion : p + is pushed downward and p z upward around valley, while p is pushed downward and p z upward around valley. t the last stage, in Fig. 4(c), the intrinsic Rashba SOC breaks the band crossing and opens a gap around valley, and results in a nontrivial state, i.e. VP-QH state, which is validated from the spin texture for the relevant p z orbital valence band. s plotted in Fig. 4(d), the Skyrmion-type spin texture around valley can be mapped onto a whole spherical surface and thus gives rise to a nonzero winding number (Chern number) in the momentum space. oreover, since there is only one Skyrmion around valley, rather than valley, the imbalance leads to a QVH effect. Consequently, a VP-QH state emerges sharing novel properties of both QH states and QVH states. The effective minimal two-band Hamiltonian around two valleys and is given to demonstrate the lowenergy properties of the H-H monolayer in the spin splitting basis {, }, which are linear combinations of p z, and p z, (for details see the Supplemental aterial) ( ) Hτ eff = ( ) + τcosθ τsinθe iφ + C k τsinθe iφ τcosθ ) (), + 3 sin (φ η k) akt R ( sinθ h h sinθ ( ) where C k λ so/ + vf k + λ so, and h e iφ [icot (φ η k ) cosθ]. a, t R and λ so are the lattice constant, the strength of intrinsic Rashba SOC, and the intrinsic SOC strength, respectively. v f is the Fermi velocity., θ and φ are the respective strength, polar and azimuthal angles of the magnetization. η k is the angle between the vector k and the x axis. τ = ± labels two valleys and. The last term is the intrinsic Rashba SOC term. By fitting the band structures using both FP and the above two-band model, these parameters can be determined as v f =. 6 m/s, λ so =.7eV, =.3eV, and t R =.ev. In the second stage, for the +z axial magnetization case, the crossing of the p z and p z bands around valley (see Fig. 4) is critical, which provide a pivot for the subsequent intrinsic Rashba SOC. Both of these two constituents result in an inverted band gap as shown in Fig. 4(c). Whether the two bands are crossing depends on the order of the eigenvalues in Eq. () when it is considered without the Rashba SOC term. It leads to the relations between and λ so, < λ so <. When the magnetization deviates the +z axial direction, the x 3

4 - - ' - //z - '. 3.4 ' //-z - ' (h) (g) (f) - (e) (d) (c) FIG. 3: (color online). The projection band structures for the F-H monolayer. The band edges mainly come from and orbitals from the atoms of both sublattices. -(d) The projection band structures for the H-H monolayer with the magnetization along the +z axis, in plane, and -z axis, respectively. The bands around Fermi level mainly consist of the orbital from the dehydrogenated atoms of the sublattice. The energy spectrum for the semi-infinite zigzag monolayer in (e)-(h) correspond to the bulk spectrum in -(d), respectively. There are two helical edges states in (e), indicating the QSH phase. (f)((h)) clearly presents the ( ) valley polarized chiral edge state with only a left (right) mover, hence is a VP-QH() phase. Nevertheless, (g) gives trivial edge states for ferromagnetic insulators. p± Jz=/, -/ B Jz=-/; Jz= /; p,p +B Rashba SOC Ef (d) Jz=-/; Jz= /; Jz= -/; p B Jz=/ Jz= /; p+ B Jz=-/ Jz=-/; Jz= /; Jz=3/, -3/ is reversed, and band evolution with similar mechanism takes place around the valley. On the experimental side, monolayers with a buckling honeycomb lattice and films have been manufactured via molecular beam epitaxy [3]. On the other hand, chemical functionalization of such D materials is a powerful tool to create new materials with desirable features, such as modifying graphene into graphone (semihydrogenated graphene), graphane and fluorinated graphene using H and F, respectively [36]. The buckled honeycomb geometry of the monolayer makes it possible to saturate the chemical bonds of atoms on only one sublattice. Therefore, it is a very promising that a H-H honeycomb monolayer may be synthesized by chemical reaction in solvents or by exposure of a monolayer or ultrathin film to atomic or molecular gases. In summary, we find topological phase transitions in a H-H honeycomb monolayer via tuning the orientation of the magnetization. Depending the orientation of the magnetization, there are four different phases, i.e. VP-QH, VP-QH, F-Insulator, and F-etal, as shown in Fig.. The mechanism for the nontrivial topological phase is given and a low-energy effective Hamiltonian is provided to capture the essential physics. s one of the potential applications, it is possible to make a homogeneous junction by applying external magnetic fields with different orientations or by virtue of magnetic substrates at different regions of a H-H monolayer film sample, as shown in Fig.. Fully valley-polarized chiral edge states along these boundaries emerge and can be utilized as dissipationless conducting wires and chiral interconnects to lower the power consumption of de- p+ B, p Jz= /; p+ B Jz=-/ Jz= -/; p B Jz=/ p+ B, p (c) Jz=3/, -3/ Sz p,p + p+, p B Jz=/, -/ p+, p B Jz=3/, -3/ p+ B, p ( ± i p y ) Jz=3/, -3/ Jz=3/, -3/ Sx p+, p B Sy Jz=3/, -3/ ' FIG. 4: (color online). -(c) Schematic diagrams of the band evolution for the magnetization along the +z axis. The evolution stages are explained in the main text. (d) Spin texture for the relevant orbtial valence band from the dehydrogenated atoms. Sx, Sy, and Sz are expectations of the three components of the spin operator for the orbtial. The red arrows represent the orientation of the spin, which is rotated by the intrinsic Rashba SOC and generates a nontrivial Skyrmion spin texture in the momentum space. Since there is only one Skyrmion around, resulting in a VP-QH phase. and y components of the Zeeman term will also break the above crossing, resulting in a trivial phase. However, the nontrivial properties remain unchanged as long as Rashba SOC dominates the x and y Zeeman components. This requirement makes further restrictions on the ratio of and λso. For the case where the magnetization is along the negative z axis, the spin splitting 4

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